AFT26H250W03SR6 AFT26H250--24SR6
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
These 50 W asymmetrical Doherty RF power LDMOS transistors are designed
for cellular base station applications requiring very wide instantaneous bandwidth
capability covering the frequency range of 2496 to 2690 MHz.
Typical Doherty Single--Carrier W--CDMA Performance: VDD =28Vdc,
IDQA = 700 mA, VGSB =0.4Vdc,P
out = 50 W Avg., Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
2496 MHz 14.1 44.6 8.1 --31.5
2590 MHz 14.4 44.9 8.1 --33.8
2690 MHz 14.2 44.2 7.9 --37.6
Features
Advanced High Performance In--Package Doherty
Designed for Wide Instantaneous Bandwidth Applications (AFT26H250W03S)
Greater Negative Gate--Source Voltage Range for Improved Class C Operation
Designed for Digital Predistortion Error Correction Systems
In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel.
Document Number: AFT26H250W03S_24S
Rev. 0, 11/2013
Freescale Semiconductor
Technical Data
1. Pin connections 1 and 2 are DC coupled and RF independent.
2. Device cannot operate with the VDD current supplied through pin 3 and pin 6.
NI--1230S--4L2L
AFT26H250--24SR6
(Top View)
RFoutA/VDSA
RFoutB/VDSB
RFinA/VGSA
RFinB/VGSB
VBWA(2)
VBWB(2)
6
3
15
24
Carrier
Peaking
NI--1230S--4S
AFT26H250W03SR6
(Top View)
RFoutA/VDSA
31
42
RFoutB/VDSB
RFinA/VGSA
RFinB/VGSB
Carrier
Peaking
(1)
Figure 1. Pin Connections
Figure 2. Pin Connections
2496–2690 MHz, 50 W AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTORS
AFT26H250W03SR6
AFT26H250--24SR6
Freescale Semiconductor, Inc., 2013.
A
ll rights reserved.
2
RF Device Data
Freescale Semiconductor, Inc.
AFT26H250W03SR6 AFT26H250--24SR6
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS --0.5, +65 Vdc
Gate--Source Voltage VGS --6.0, +10 Vdc
Operating Voltage VDD 32, +0 Vdc
Storage Temperature Range Tstg --65 to +150 C
Case Operating Temperature Range AFT26H250W03S
AFT26H250--24S
TC--40 to +125
--40 to +150
C
Operating Junction Temperature Range (1,2) TJ--40 to +225 C
CW Operation @ TC=25C
Derate above 25C
CW 294
1.7
W
W/C
Table 2. Thermal Characteristics
Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case
Case Temperature 78C, 50 W--CDMA, 28 Vdc, IDQA = 700 mA, VGSB = 0.4 Vdc, 2590 MHz
RJC 0.42 C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2
Machine Model (per EIA/JESD22--A115) B
Charge Device Model (per JESD22--C101) IV
Table 4. Electrical Characteristics (TA=25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current AFT26H250W03S (4,5)
(VDS =65Vdc,V
GS = 0 Vdc) AFT26H250--24S (6)
IDSS — — 10 Adc
Zero Gate Voltage Drain Leakage Current AFT26H250W03S (4,5)
(VDS =28Vdc,V
GS = 0 Vdc) AFT26H250--24S (6)
IDSS —
—
—
—
5
1
Adc
Gate--Source Leakage Current AFT26H250W03S (4,5)
(VGS =5Vdc,V
DS = 0 Vdc) AFT26H250--24S (6)
IGSS — — 1 Adc
On Characteristics -- Side A (Carrier)
Gate Threshold Voltage AFT26H250W03S (4,6)
(VDS =10Vdc,I
D= 140 Adc) AFT26H250--24S (6)
VGS(th) 0.8 1.2 1.6 Vdc
Gate Quiescent Voltage AFT26H250W03S (4,6)
(VDD =28Vdc,I
DA = 700 mAdc, AFT26H250--24S (6)
Measured in Functional Test)
VGS(Q) 1.4 1.8 2.2 Vdc
Drain--Source On--Voltage AFT26H250W03S (4,6)
(VGS =6Vdc,I
D= 1.4 Adc) AFT26H250--24S (6)
VDS(on) 0.1 0.15 0.3 Vdc
On Characteristics -- Side B (Peaking)
Gate Threshold Voltage AFT26H250W03S (4,6)
(VDS =10Vdc,I
D= 200 Adc) AFT26H250--24S (6)
VGS(th) 0.8 1.2 1.6 Vdc
Drain--Source On--Voltage AFT26H250W03S (4,6)
(VGS =6Vdc,I
D= 2.0 Adc) AFT26H250--24S (6)
VDS(on) 0.1 0.15 0.3 Vdc
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. VDDA and VDDB must be tied together and powered by a single DC power supply.
5. Side A and Side B are tied together for these measurements.
6. Each side of device measure separately.
(continued)
AFT26H250W03SR6 AFT26H250--24SR6
3
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics (TA=25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Functional Tests (1,2,3) (In Freescale Doherty Test Fixture, 50 ohm system) VDD =28Vdc,I
DQA = 700 mA, VGSB =0.4Vdc,P
out =50WAvg.,
f = 2496 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in
3.84 MHz Channel Bandwidth @ 5MHzOffset.
Power Gain Gps 13.0 14.1 16.0 dB
Drain Efficiency D41.0 44.6 — %
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
AFT26H250W03S
AFT26H250--24S
PAR
7.5
7.4
8.1
8.1
—
—
dB
Adjacent Channel Power Ratio ACPR —--31.5 --29.0 dBc
Load Mismatch — AFT26H250W03S (In Freescale Test Fixture, 50 ohm system) IDQA = 700 mA, f = 2590 MHz
VSWR 10:1 at 32 Vdc, 364 W(4) CW Output Power
(3 dB Input Overdrive from 230 W CW Rated Power)
No Device Degradation
Load Mismatch — AFT26H250--24S (In Freescale Test Fixture, 50 ohm system) IDQA = 700 mA, f = 2590 MHz
VSWR 10:1 at 32 Vdc, 335 W(4) CW Output Power
(2 dB Input Overdrive from 230 W CW Rated Power)
No Device Degradation
Typical Performances (2) (In Freescale Doherty Test Fixture, 50 ohm system) VDD =28Vdc,I
DQA = 700 mA, VGSB =0.4Vdc,
2496--2690 MHz Bandwidth
Pout @ 1 dB Compression Point, CW P1dB —230 — W
Pout @ 3 dB Compression Point (5) P3dB —320 — W
AM/PM
(Maximum value measured at the P3dB compression point across the
2496--2690 MHz frequency range)
—-- 2 2 —
VBW Resonance Point AFT26H250W03S
(IMD Third Order Intermodulation Inflection Point) AFT26H250--24S
VBWres —
—
140
110
—
—
MHz
Gain Flatness in 194 MHz Bandwidth @ Pout =50WAvg. GF—0.3 —dB
Gain Variation over Temperature
(--30Cto+85C)
G — 0.002 —dB/C
Output Power Variation over Temperature
(--30Cto+85C) (4)
P1dB —0.006 —dB/C
1. Part internally matched both on input and output.
2. VDDA and VDDB must be tied together and powered by a single DC power supply (AFT26H250W03S).
3. Measurements made with device in an asymmetrical Doherty configuration.
4. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
5. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
4
RF Device Data
Freescale Semiconductor, Inc.
AFT26H250W03SR6 AFT26H250--24SR6
Figure 3. AFT26H250W03SR6(--24SR6) Test Circuit Component Layout
+
--
+
--
AFT26H250W03S/24S
Rev. 1
CUT OUT AREA
C1
D52784
C2 R2
C3 C4
C5
C6 C7
C8
Z1
R1
C9 C10 R3
C22
C19 C20
C18
C17
C16
C15
C14
C13
C12
C11
C21
C
P
VDDA VDDB
VGGB
VGGA
Note: VDDA and VDDB must be tied together and powered by a single DC power supply.
Table 5. AFT26H250W03SR6(--24SR6) Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1, C9, C11, C12, C19, C20 10 F Chip Capacitors C5750X7S2A106M230KB TDK
C2, C5, C8, C10, C13, C18 6.8 pF Chip Capacitors ATC600F6R8BT250XT ATC
C3, C4 0.5 pF Chip Capacitors ATC600F0R5BT250XT ATC
C6, C7 0.3 pF Chip Capacitors ATC600F0R3BT250XT ATC
C14 0.8 pF Chip Capacitor ATC600F0R8BT250XT ATC
C15 2.0 pF Chip Capacitor ATC600F2R0BT250XT ATC
C16 10 pF Chip Capacitor ATC600F100JT250XT ATC
C17 0.9 pF Chip Capacitor ATC600F0R9BT250XT ATC
C21, C22 220 F Electrolytic Capacitors 227CKS050M Illinois Capacitor
R1 50 , 4 W Chip Resistor CW12010T0050GBK ATC
R2, R3 2.0 , 1/4 W Chip Resistors CRCW12062R00JNEA Vishay
Z1 2300--2700 MHz Band, 5 dB Directional Coupler X3C25P1-05S Anaren
PCB Rogers RO4305B, 0.020,r=3.66 D52784 MTL
AFT26H250W03SR6 AFT26H250--24SR6
5
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
PARC (dB)
2480
ACPR
f, FREQUENCY (MHz)
Figure 4. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 50 Watts Avg.
-- 2 . 3
-- 1 . 5
-- 1 . 7
-- 1 . 9
-- 2 . 1
13
15
14.8
14.6
-- 3 9
47
46
45
44
-- 2 9
-- 3 1
-- 3 3
-- 3 5
D, DRAIN
EFFICIENCY (%)
D
Gps, POWER GAIN (dB)
14.4
14.2
14
13.8
13.6
13.4
13.2
2510 2540 2570 2600 2630 2660 2690 2720
43
-- 3 7
-- 2 . 5
ACPR (dBc)
PARC
Figure 5. Intermodulation Distortion Products
versus Two--Tone Spacing — AFT26H250W03S
TWO--TONE SPACING (MHz)
10
-- 6 0
-- 1 0
-- 2 0
-- 3 0
-- 5 0
1 300
IMD, INTERMODULATION DISTORTION (dBc)
-- 4 0
IM3--U
IM5--U
IM5--L
IM7--L
IM7--U
Gps
IM3--L
100
VDD =28Vdc,P
out = 100 W (PEP), IDQA = 700 mA
VGSB = 0.4 Vdc, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2590 MHz
Figure 6. Intermodulation Distortion Products
versus Two--Tone Spacing — AFT26H250--24S
TWO--TONE SPACING (MHz)
10
-- 7 0
-- 1 0
-- 2 0
-- 3 0
-- 5 0
1 300
IMD, INTERMODULATION DISTORTION (dBc)
-- 4 0
IM5--U
IM5--L
IM7--U
IM3--L
100
VDD =28Vdc,P
out = 100 W (PEP), IDQA = 700 mA
VGSB = 0.4 Vdc, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2590 MHz
IM3--U
IM7--L
-- 6 0
VDD =28Vdc,P
out =50W(Avg.)
IDQA = 700 mA, VGSB =0.4mA
Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
6
RF Device Data
Freescale Semiconductor, Inc.
AFT26H250W03SR6 AFT26H250--24SR6
TYPICAL CHARACTERISTICS
Figure 7. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
Pout, OUTPUT POWER (WATTS)
-- 1
-- 3
30
0
-- 2
-- 4
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
10 50 70 110
0
60
50
40
30
20
10
DDRAIN EFFICIENCY (%)
--2dB=54.1W
90
D
ACPR
PARC
ACPR (dBc)
-- 4 5
-- 1 5
-- 2 0
-- 2 5
-- 3 5
-- 3 0
-- 4 0
16
Gps, POWER GAIN (dB)
15
14
13
12
11
10
Gps
--1dB=33.6W
-- 3 d B = 7 1 W
-- 5
1VDD =28Vdc,I
DQA = 700 mA
VGSB = 0.4 Vdc, f = 2590 MHz
Single--Carrier W--CDMA 3.84 MHz Channel
Bandwidth, Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
1
Gps
ACPR
Pout, OUTPUT POWER (WATTS) AVG.
Figure 8. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
10
16
0
60
50
40
30
20
D, DRAIN EFFICIENCY (%)
D
Gps, POWER GAIN (dB)
15
14
10 100 300
10
13
12
11
2690 MHz
2590 MHz
2496 MHz
2690 MHz
2496 MHz
2590 MHz
2496 MHz
2690 MHz
2590 MHz
3.84 MHz Channel Bandwidth, Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF
VDD =28Vdc,I
DQA = 700 mA
VGSB = 0.4 Vdc, Single--Carrier W--CDMA -- 1 0
-- 2 0
-- 6 0
ACPR (dBc)
0
-- 3 0
-- 4 0
-- 5 0
Figure 9. Broadband Frequency Response
0
18
f, FREQUENCY (MHz)
VDD =28Vdc
Pin =0dBm
IDQA = 700 mA
VGSB =0.4Vdc
12
9
6
GAIN (dB)
15
3
2300 2400 2500 2600 2700 2800 2900 3000
Gain
AFT26H250W03SR6 AFT26H250--24SR6
7
RF Device Data
Freescale Semiconductor, Inc.
VDD =28Vdc,I
DQA = 689 mA,Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zin
()
Max Output Power
P1dB
Zload (1)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2496 4.07 - j10.7 4.00 + j9.61 2.03 - j4.57 17.4 51.8 151 54.1 -13
2590 7.57 - j11.9 6.72 + j10.7 2.00 - j4.75 17.6 51.7 147 53.2 -12
2690 15.7 - j9.50 12.9 + j8.73 2.00 - j5.11 17.6 51.6 143 52.4 -13
f
(MHz)
Zsource
()
Zin
()
Max Output Power
P3dB
Zload (2)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2496 4.07 - j10.7 3.92 + j10.2 1.92 - j4.78 15.2 52.5 179 54.9 -17
2590 7.57 - j11.9 7.03 + j11.7 1.91 - j4.97 15.3 52.4 174 53.6 -17
2690 15.7 - j9.50 14.9 + j9.37 1.92 - j5.34 15.3 52.3 170 52.4 -17
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Figure 10. Carrier Side Load Pull Performance — Maximum Power Tuning
VDD =28Vdc,I
DQA = 689 mA,Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zin
()
Max Drain Efficiency
P1dB
Zload (1)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2496 4.07 - j10.7 4.07 + j10.0 4.82 - j3.58 19.7 49.9 97 64.0 -19
2590 7.57 - j11.9 6.62 + j11.4 3.74 - j2.51 20.0 49.6 92 62.6 -21
2690 15.7 - j9.50 13.3 + j9.45 3.36 - j2.87 19.9 49.5 90 61.2 -20
f
(MHz)
Zsource
()
Zin
()
Max Drain Efficiency
P3dB
Zload (2)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2496 4.07 - j10.7 3.77 + j10.6 4.53 - j2.90 17.8 50.4 111 64.0 -28
2590 7.57 - j11.9 6.80 + j12.2 3.67 - j2.58 18.0 50.3 108 62.7 -29
2690 15.7 - j9.50 15.2 + j9.96 3.36 - j2.87 17.9 50.2 105 61.2 -28
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Figure 11. Carrier Side Load Pull Performance — Maximum Drain Efficiency Tuning
Input Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin Zload
Output Load Pull
Tuner and Test
Circuit
8
RF Device Data
Freescale Semiconductor, Inc.
AFT26H250W03SR6 AFT26H250--24SR6
VDD =28Vdc,V
GSB =0.4mA,Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zin
()
Max Output Power
P1dB
Zload (1)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2496 3.33 - j9.36 3.00 + j9.43 2.00 - j5.09 12.1 53.2 209 54.4 -22
2590 4.98 - j10.4 5.22 + j10.6 2.11 - j5.43 12.2 53.1 203 53.8 -22
2690 10.9 - j8.12 11.3 + j9.48 2.35 - j6.10 12.1 52.9 196 52.8 -20
f
(MHz)
Zsource
()
Zin
()
Max Output Power
P3dB
Zload (2)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2496 3.33 - j9.36 3.14 + j9.86 1.99 - j5.35 9.9 53.9 243 54.3 -28
2590 4.98 - j10.4 5.76 + j11.2 2.11 - j5.74 10.0 53.7 236 53.0 -28
2690 10.9 - j8.12 13.0 + j9.24 2.40 - j6.29 10.0 53.5 226 52.5 -26
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Figure 12. Peaking Side Load Pull Performance — Maximum Power Tuning
VDD =28Vdc,V
GSB =0.4mA,Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zin
()
Max Drain Efficiency
P1dB
Zload (1)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2496 3.33 - j9.36 2.65 + j9.45 4.22 - j3.35 13.3 51.6 144 64.3 -30
2590 4.98 - j10.4 4.64 + j10.7 3.57 - j3.41 13.4 51.6 145 63.8 -30
2690 10.9 - j8.12 10.5 + j10.4 3.29 - j3.86 13.1 51.6 143 62.4 -27
f
(MHz)
Zsource
()
Zin
()
Max Drain Efficiency
P3dB
Zload (2)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2496 3.33 - j9.36 2.81 + j9.82 3.97 - j3.62 11.2 52.3 171 64.6 -38
2590 4.98 - j10.4 5.16 + j11.3 3.50 - j3.54 11.3 52.2 167 63.7 -38
2690 10.9 - j8.12 12.3 + j10.3 3.17 - j3.92 11.1 52.1 163 61.8 -35
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Figure 13. Peaking Side Load Pull Performance — Maximum Drain Efficiency Tuning
Input Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin Zload
Output Load Pull
Tuner and Test
Circuit
AFT26H250W03SR6 AFT26H250--24SR6
9
RF Device Data
Freescale Semiconductor, Inc.
P1dB -- TYPICAL CARRIER SIDE LOAD PULL CONTOURS — 2590 MHz
-- 6
-- 1
-- 2
IMAGINARY ()
22.5
15
-- 3
4.5
1.5
-- 4
-- 5
3.5 4
3
-- 6
-- 1
-- 2
IMAGINARY ()
22.5
15
-- 3
4.5
1.5
-- 4
-- 5
3.5 4
3
-- 6
-- 1
-- 2
IMAGINARY ()
22.5
15
-- 3
4.5
1.5
-- 4
-- 5
3.5 4
3
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
Figure 14. P1dB Load Pull Output Power Contours (dBm)
REAL ()
-- 6
-- 1
-- 2
IMAGINARY ()
22.5
15
-- 3
4.5
1.5
Figure 15. P1dB Load Pull Efficiency Contours (%)
REAL ()
Figure 16. P1dB Load Pull Gain Contours (dB)
REAL ()
Figure 17. P1dB Load Pull AM/PM Contours ()
REAL ()
-- 4
-- 5
3.5 4
3
60
58
56
54
52
50
62
E E
P
EE
46
48
P
P P
47.5 48 48.5 49
49.5
50
50.5
51
20
20.5
-- 1 2
-- 2 2
-- 2 8
51.5
16.5
17 17.5 18
18.5 19
19.5
-- 1 4
-- 1 6
-- 1 8
-- 2 0
-- 2 4
-- 2 6
10
RF Device Data
Freescale Semiconductor, Inc.
AFT26H250W03SR6 AFT26H250--24SR6
P3dB -- TYPICAL CARRIER SIDE LOAD PULL CONTOURS — 2590 MHz
-- 6
-- 1
-- 2
IMAGINARY ()
22.5
15
-- 3
4.5
1.5
-- 4
-- 5
3.5 4
3
-- 6
-- 1
-- 2
IMAGINARY ()
22.5
15
-- 3
4.5
1.5
-- 4
-- 5
3.5 4
3
-- 6
-- 1
-- 2
IMAGINARY ()
22.5
15
-- 3
4.5
1.5
-- 4
-- 5
3.5 4
3
-- 6
-- 1
-- 2
IMAGINARY ()
22.5
15
-- 3
4.5
1.5
-- 4
-- 5
3.5 4
3
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
Figure 18. P3dB Load Pull Output Power Contours (dBm)
REAL ()
Figure 19. P3dB Load Pull Efficiency Contours (%)
REAL ()
Figure 20. P3dB Load Pull Gain Contours (dB)
REAL ()
Figure 21. P3dB Load Pull AM/PM Contours ()
REAL ()
51.5
50
49.5
49
48.5
P
E E
P
E
18.5
-- 1 6
-- 1 8
-- 2 0
E
-- 2 2
-- 2 4
-- 2 6
-- 2 8
-- 3 0
-- 3 2
52
51 50.5
60
58 56
54
P
62
54
52
50
48
46
14.5
15
15.5 16
16.5 17
17.5
18
P
AFT26H250W03SR6 AFT26H250--24SR6
11
RF Device Data
Freescale Semiconductor, Inc.
P1dB -- TYPICAL PEAKING SIDE LOAD PULL CONTOURS — 2590 MHz
Figure 22. P1dB Load Pull Output Power Contours (dBm)
REAL ()
-- 7
-- 2
-- 3
IMAGINARY ()
22.5
15
-- 4
4.5
1.5
-- 5
-- 6
3.5 4
3
-- 7
-- 2
-- 3
IMAGINARY ()
22.5
15
-- 4
4.5
1.5
-- 5
-- 6
3.5 4
3
-- 7
-- 2
-- 3
IMAGINARY ()
22.5
15
-- 4
4.5
1.5
-- 5
-- 6
3.5 4
3
-- 7
-- 2
-- 3
IMAGINARY ()
22.5
15
-- 4
4.5
1.5
-- 5
-- 6
3.5 4
3
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
Figure 23. P1dB Load Pull Efficiency Contours (%)
REAL ()
Figure 24. P1dB Load Pull Gain Contours (dB)
REAL ()
Figure 25. P1dB Load Pull AM/PM Contours ()
REAL ()
52.5
52
51.5
51
50.5
E
PP
E
-- 3 6 -- 3 4 -- 3 2
-- 3 0
-- 2 8
-- 2 6
-- 2 4
-- 2 2
49
49.5 50
53
10
10.5
11
11.5
12
12.5
13 E
PP PP
PP
E
PP
48 50 52 54
56
58
60
62
12
RF Device Data
Freescale Semiconductor, Inc.
AFT26H250W03SR6 AFT26H250--24SR6
P3dB -- TYPICAL PEAKING SIDE LOAD PULL CONTOURS — 2590 MHz
-- 7
-- 2
-- 3
IMAGINARY ()
22.5
15
-- 4
4.5
1.5
-- 5
-- 6
3.5 4
3
-- 7
-- 2
-- 3
IMAGINARY ()
22.5
15
-- 4
4.5
1.5
-- 5
-- 6
3.5 4
3
-- 7
-- 2
-- 3
IMAGINARY ()
22.5
15
-- 4
4.5
1.5
-- 5
-- 6
3.5 4
3
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
Figure 26. P3dB Load Pull Output Power Contours (dBm)
REAL ()
-- 7
-- 2
-- 3
IMAGINARY ()
22.5
15
-- 4
4.5
1.5
Figure 27. P3dB Load Pull Efficiency Contours (%)
REAL ()
Figure 28. P3dB Load Pull Gain Contours (dB)
REAL ()
Figure 29. P3dB Load Pull AM/PM Contours ()
REAL ()
-- 5
-- 6
3.5 4
3
P
E
52.5
51.5
49.5
53
52
51
50
E
P
62
60
58
56
54
52
50
48
P
E
8.5 9
8
E
P
-- 4 2 -- 4 0
-- 3 8
-- 3 6
-- 3 4
-- 3 2
-- 3 0
-- 2 8
-- 2 6
9.5
10
10.5
11
53.5
50.5
AFT26H250W03SR6 AFT26H250--24SR6
13
RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
14
RF Device Data
Freescale Semiconductor, Inc.
AFT26H250W03SR6 AFT26H250--24SR6
AFT26H250W03SR6 AFT26H250--24SR6
15
RF Device Data
Freescale Semiconductor, Inc.
16
RF Device Data
Freescale Semiconductor, Inc.
AFT26H250W03SR6 AFT26H250--24SR6
AFT26H250W03SR6 AFT26H250--24SR6
17
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, software and tools to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools
Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0Nov. 2013 Initial Release of Data Sheet
18
RF Device Data
Freescale Semiconductor, Inc.
AFT26H250W03SR6 AFT26H250--24SR6
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Document Number: AFT26H250W03S_24S
Rev. 0, 11/2013
