2-Pack IGBT 1200V 2x100A 2MBI 100S-120 Outline Drawing IGBT MODULE ( S-Series ) Features * NPT-Technology * Square SC SOA at 10 x IC * High Short Circuit Withstand-Capability * Small Temperature Dependence of the Turn-Off Switching Loss * Low Losses And Soft Switching Applications * High Power Switching * A.C. Motor Controls * D.C. Motor Controls * Uninterruptible Power Supply Maximum Ratings and Characteristics Equivalent Circuit * Absolute Maximum Ratings Items Collector-Emitter Voltage Gate -Emitter Voltage Continuous Collector 1ms Current Continuous 1ms Max. Power Dissipation Operating Temperature Storage Temperature Isolation Voltage A.C. 1min. Screw Torque ( Tc=25C) Symbols VCES VGES 25C / 80C IC 25C / 80C IC PULSE -IC -IC PULSE PC Tj Tstg Vis Mounting 1* Terminals 2* Ratings 1200 20 150 / 100 300 / 200 100 200 780 +150 -40 +125 2500 3.5 4.5 Units V A W C V Nm Note: 1*: Recommendable Value; 2.5 3.5 Nm (M5) or (M6) 2*: Recommendable Value; 3.5 4.5 Nm (M6) * Electrical Characteristics Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage ( at Tj=25C ) Symbols Collector-Emitter Saturation Voltage VCE(sat) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-off Time Cies Coes Cres tON tr,x tr,i tOFF tf Test Conditions VGE=0V VCE=1200V VCE=0V VGE= 20V VGE=20V IC=100mA Tj = 25C VGE=15V IC=100A Tj =125C VGE=0V VCE=10V f=1MHz VCC = 600V IC = 100A VGE = 15V RG = 9.1 Inductive Load Diode Forward On-Voltage VF IF=100A Reverse Recovery Time trr IF=100A Turn-on Time ICES IGES VGE(th) Min. Typ. 5.5 7.2 2.3 2.8 12000 2500 2200 0.35 0.25 0.10 0.45 0.08 Tj = 25C Tj =125C 2.3 2.0 Max. 2.0 400 8.5 2.6 Units mA nA V pF 1.2 0.6 1.0 0.3 3.0 s V 350 ns Max. 0.16 0.33 Units * Thermal Characteristics Items Thermal Resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions IGBT Diode With Thermal Compound Min. Typ. C/W 0.025 MS5F 4952 2001-02-21 2MBI 100S-120 2-Pack IGBT 1200V 2x100A 2MBI 100S-120 2-Pack IGBT 1200V 2x100A 2MBI 100S-120 2-Pack IGBT 1200V 2x100A