S9703-11 - Hamamatsu Photonics K.K.

Photo IC for laser beam synchronous detection

High sensitivity, high-speed response

S9703-10/-11

www.hamamatsu.com 1

Absolute maximum ratings (Ta=25 °C, unless otherwise noted)

Parameter Symbol Value Unit

Supply voltage Vcc -0.5 to +7 V

Power dissipation*1P 300 mW

Output voltage*2Vo -0.5 to +7 V

Output current Io 5 mA

Ro terminal current IRO 3mA

Operating temperature Topr -25 to +80 °C

Storage temperature Tstg -40 to +85 °C

Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the

product within the absolute maximum ratings.

*1: Power dissipation decreases at a rate of 4 mW/°C above Ta=25 °C.

*2: Vcc=+0.5 V or less

The S9703 series photo IC uses a high-speed PIN photodiode designed for laser beam synchronous detection. When

compared to the S9703 and S9703-01 previously marketed, the S9703-10 and S9703-11 have reduced their reﬂ ection

effects in the package. Two types of current amplifiers are available with a gain of 6 times (S9703-11) and 20 times

(S9703-10) that can be selected according to laser power to be used. Tape-and-reel shipment is available (S9703-30 and

S9703-31). Hamamatsu also provides the S9684 series photo ICs that use a dual-element Si PIN photodiode.

Print start timing detection for laser printers,

digital copiers, fax machines, etc.

Small package

Suitable for lead-free solder reﬂ ow

Photosensitive area: 2.84 × 0.5 mm

High sensitivity

Current ampliﬁ er gain: 20 times (S9703-10)

6 times (S9703-11)

Digital output

Features Applications

Photo IC for laser beam synchronous detection S9703-10/-11

Electrical and optical characteristics (Ta=25 °C, λ=780 nm, Vcc=5 V, Ro=5.1 kΩ, unless otherwise noted)

Parameter Symbol Condition Min. Typ. Max. Unit

Current consumption Icc No input - 0.9 1.5 mA

High level output voltage VOH IOH=4 mA 4.6 - - V

Low level output voltage VOL IOL=4 mA*3- - 0.3 V

Threshold input power

S9703-10 PTH 17 22 27 μW

S9703-11 60 75 90

H→L propagation

delay time

S9703-10 tPHL

PI=66 μW (S9703-10)

PI=225 μW (S9703-11)

Duty ratio 1:1

CL=15 pF*4

- 100 200

S9703-11 - 75 150

L→H propagation

delay time

S9703-10 tPLH - 200 250

S9703-11 - 150 200

Rise time tr - 4 7 ns

Fall time tf - 4 7 ns

Maximum input power PI max - - PTH × 8 μW

*3: Input power [PI]=66 μW (S9703-10), PI=225 μW (S9703-11)

*4: Measured with a pulse-driven laser diode. Rise time and fall time of input light-pulse are 1 ns or less.

Block diagram

50%

Input light

level

Output

100%

90%

1.5 V

10%

tPHL

tf tr

tPLH

KPICC0112EA

Vcc

0.1 μF 5 V

Current

amplifier

External

gain resistance

Vref

GND

KPICC0113EA

Photo IC for laser beam synchronous detection S9703-10/-11

Dimensional outline (unit: mm)

0.66 ± 0.2

3.2 ± 0.2

(Including burr)

3.0*1.0 ± 0.4 1.0 ± 0.4 0.05

2.4

Mirror area

range

0.15

2.8

2.9

3.0*0.45 ± 0.3

3.0*

3.4

Mirror area

range

3.8

3.9

4.0*

4.2 ± 0.2

5.0 ± 0.3

0.45 ± 0.3

0.35

0.75

1.3

0.80.80.8

0.1 ± 0.1

0.8

(10 ×) 0.3

(10 ×) 0.4

0.5

Photosensitive

surface Tolerance unless otherwise noted: ±0.1, ±2°

Shaded area indicates burr.

Chip position accuracy with respect to the

package dimensions marked *

X, Y≤±0.2, θ≤±2°

Vcc

OUT

GND

0.15 ± 0.2

2.84

Center of

Photosensitive area

Photosensitive

surface

KPICA0071EA

Function

The S9703-10/-11 photo IC integrates a photodiode chip and an IC chip into the same package. The photodiode chip is internally

connected to the IC chip as shown in the block diagram. The S9703-10/-11 should be used with terminal Ro connected to an external gain

resistance Ro.

A photocurrent is generated when a laser beam enters the photodiode. This photocurrent is fed to the input terminal of the IC and,

after being ampliﬁ ed by the current ampliﬁ er, ﬂ ows to the external gain resistance. At this time, voltages VRO at terminal Ro is given by

the following expression.

VRO=A × S × PI × Ro [V] ∙∙∙∙∙∙∙∙ (1)

A: Current ampliﬁ er gain (S9703-10: 20 times, S9703-11: 6 times)

S: Photodiode sensitivity [A/W] (approx. 0.44 A/W at 780 nm)

PI: Input power [W]

Ro: External gain resistance [Ω]; usable range 2 kΩ to 10 kΩ

VRO is input to the internal comparator and compared with the internal reference voltage Vref (approx. 1 V) so the output Vo is “High”

when VRO < Vref or “Low” when VRO > Vref.

In equation (1), set the Ro value so that VRO will be 2 to 3 V.

Cat. No. KPIC1068E03 Mar. 2013 DN

www.hamamatsu.com

HAMAMATSU PHOTONICS K.K., Solid State Division

1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218

Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8

France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10

United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777

North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01

Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741

China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866

Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the

information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always

Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or

a suffix "(Z)" which means developmental specifications.

The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that

one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product

use.

Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.

Information described in this material is current as of March, 2013.

Photo IC for laser beam synchronous detection S9703-10/-11

Time

Temperature

300 °C

220 °C

190 °C

170 °C

Preheat

70 to 90 s

Soldering

40 s max.

240 °C max.

KPICB0171EA

Measured example of temperature profile with our hot-air reflow oven for product testing

These products support lead-free soldering. After unpacking, store them in an environment at a temperature of 30 °C or less and a

humidity of 60% or less, and perform soldering within 24 hours.