Photo IC diode S9648-100 Plastic package shaped the same as metal package The S9648-100 photo IC has spectral response close to human eye sensitivity. Two photosensitive areas are made on a single chip. Almost only the visible range can be measured by finding the difference between the two output signals in the internal current amplifier circuit. Compared to the previous type, the S9648-100 offers lower output fluctuations for light sources producing the same illuminance at different color temperatures. The S9648-100 is encapsulated in a plastic package having the same shape as a metal package. The shape of the S9648-100 also resembles our 5R type visible sensors (CdS photoconductive cells), so the S9648-100 can be used as a replacement for those visible sensors. Features Applications Spectral response close to human eye sensitivity is attained without using visual-compensated filter. Energy-saving sensor for TVs, etc. Operation just as easy to use as a photodiode Lower output-current fluctuations compared with phototransistors and CdS photoconductive cells. Light dimmers for liquid crystal panels Various types of light level measurement Excellent linearity Low output fluctuations for light sources producing the same illuminance at different color temperatures Absolute maximum ratings Parameter Maximum reverse voltage Photocurrent Forward current Power dissipation*1 Operating temperature Storage temperature Symbol VR max. IL IF P Topr Tstg Ta=25 Ta=25 Ta=25 Ta=25 Condition C C C C Value -0.5 to 12 5 5 250 -30 to +80 -40 to +85 Unit V mA mA mW C C Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within absolute maximum ratings. *1: Power dissipation decreases at a rate of 3.3 mW/C above Ta=25 C. Electrical and optical characteristics (Ta=25 C, unless otherwise noted.) Parameter Spectral response range Peak sensitivity wavelength Dark current Photocurrent Symbol p ID IL Rise time*2 tr Fall time*2 tf Condition VR=5 V VR=5 V, 2856 K, 100 lx 10 to 90%, VR=7.5 V RL=10 k, =560 nm 90 to 10%, VR=7.5 V RL=10 k, =560 nm Min. 0.18 Typ. 300 to 820 560 1.0 0.26 Max. 50 0.34 Unit nm nm nA mA - 6.0 - ms - 2.5 - ms *2: Rise/fall time measurement method (page 2) www.hamamatsu.com 1 Photo IC diode S9648-100 Pulsed light from LED (=560 nm) 2.5 V 90% Vout 10% 0.1 F tr 7.5 V tf Vout Load resistance RL KPICC0041EA Spectral response Linearity (Typ. Ta=25 C, VR=5 V) 1.0 (Typ. Ta=25 C, VR=5 V, 2856 K) 10 mA 0.9 Human eye sensitivity 1 mA 0.7 100 A Photocurrent Relative sensitivity 0.8 0.6 0.5 S9648-100 0.4 10 A 1 A 0.3 0.2 100 nA 0.1 0 200 400 600 800 1000 1200 Wavelength (nm) 10 nA 0.1 1 10 100 1000 Illuminance (lx) KPICB0085EB KPICB0086EB 2 Photo IC diode S9648-100 Rise/fall times vs. load resistance 100 Rise/fall times (ms) 10 (Typ. Ta=25 C, VR=7.5 V, =560 nm, Vo=2.5 V) Rise time 1 Fall time 0.1 0.01 100 1k 10 k 100 k 1M Load resistance () KPICB0077EB Operating circuit example Photodiode for signal detection Photodiode for signal offset Cathode Internal protection resistance (Approx. 150 ) The drawing surrounded by the dotted line shows a schematic diagram of the photo IC. Reverse bias power supply Current amp (Approx. 30000 times) Anode CL Vout RL KPICC0091EC The photo IC diode must be reverse-biased so that a positive potential is applied to the cathode. To eliminate high-frequency components, we recommend placing a load capacitance CL in parallel with load resistance RL as a low-pass filter. Cutoff frequency (fc) 1 2CLRL 3 Photo IC diode S9648-100 Operating voltage, output characteristics Figure 2 shows photocurrent vs. reverse voltage characteristics (light source: LED) measured using the circuit shown in Figure 1. Output curves are plotted at different illuminance levels equivalent to a standard source A. The output curves start rising at a reverse voltage of approx. 0.7 V (rising voltage). Photo IC diode contains an internal resistance of approx. 150 to protect against excessive current. The reverse voltage VR of a photo IC diode is the sum of Vbe(ON) and the voltage drop across the protective resistance Rin. VR = Vbe(ON) + IL x Rin ............ (1) [Figure 1] Measurement circuit IL RL (external resistance) Rin=150 (internal protection resistance) Vcc Photo IC diode Vbe(ON)=0.7 V (photodiode, current amplifier) KPICC0128EB [Figure 2] Photocurrent vs. reverse voltage (Typ. Ta=25 C) 5 Internal protective resistance Rin: Approx. 150 Photocurrent (mA) 4 Saturation region Approx. 1260 lx 1600 lx 1380 lx 1150 lx 3 880 lx Load line Vcc=5 V, RL=1 k 2 Saturation region Approx. 650 lx 600 lx Load line Vcc=3 V, RL=1 k 300 lx 1 0 0 Rising voltage 1 2 3 4 5 Reverse voltage (V) KPICB0107EA The voltage drop (VL) caused by the external resistance is expressed by the following equation and is shown as load lines in Figure 2. VL = Vcc - IL x RL ............ (2) In Figure 2, the intersections between the output curves and load lines indicate the saturation region. Maximum detectable light levels can be estimated from this saturation point. Since the maximum detectable light level is determined by the power supply voltage (Vcc) and load resistance (RL), change them to meet the required operating conditions. Note: Vbe(ON) and internal protection resistance have a respective temperature dependence of approximately -2 mV/C and 0.1 %/C. 4 Photo IC diode S9648-100 Dimensional outline (unit: mm) 0.75 0.25 0.13 5.0 0.2 Center of photosensitive area Photosensitive area 0.46 x 0.32 2.54 0.5 (specified at lead root) (2 x) 1.0 max. 1.0 min. (2 x) 0.5 Sn plated lead (1.0) (2 x) 1.0 max. 25.4 min. (4.3) 3.5 0.3 1.5 max. Photosensitive surface Fillet Tie-bar cut point (including burr, no plating) Anode Cathode Lead surface finish: Sn plating Packing: Polyethylene pack [anti-static type] (500 pcs/pack) KPICA0057ED Information described in this material is current as of July, 2012. Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact us for the delivery specification sheet to check the latest information. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KPIC1057E05 Jul. 2012 DN 5