1
S9648-100
Plastic package shaped the same as metal package
www.hamamatsu.com
Photo IC diode
The S9648-100 photo IC has spectral response close to human eye sensitivity. Two photosensitive areas are made on a single
chip. Almost only the visible range can be measured by fi nding the difference between the two output signals in the internal
current amplifi er circuit. Compared to the previous type, the S9648-100 offers lower output fl uctuations for light sources produc-
ing the same illuminance at different color temperatures. The S9648-100 is encapsulated in a plastic package having the same
shape as a metal package. The shape of the S9648-100 also resembles our 5R type visible sensors (CdS photoconductive cells),
so the S9648-100 can be used as a replacement for those visible sensors.
Absolute maximum ratings
Electrical and optical characteristics (Ta=25 °C, unless otherwise noted.)
Parameter Symbol Condition Value Unit
Maximum reverse voltage VR max. Ta=25 °C -0.5 to 12 V
Photocurrent ILTa=25 °C 5 mA
Forward current IFTa=25 °C 5 mA
Power dissipation*1P Ta=25 °C 250 mW
Operating temperature Topr -30 to +80 °C
Storage temperature Tstg -40 to +85 °C
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within absolute maximum ratings.
*1: Power dissipation decreases at a rate of 3.3 mW/°C above Ta=25 °C.
Parameter Symbol Condition Min. Typ. Max. Unit
Spectral response range λ- 300 to 820 - nm
Peak sensitivity wavelength λp- 560 - nm
Dark current IDVR=5 V - 1.0 50 nA
Photocurrent ILVR=5 V, 2856 K, 100 lx 0.18 0.26 0.34 mA
Rise time*2tr 10 to 90%, VR=7.5 V
RL=10 kΩ, λ=560 nm - 6.0 - ms
Fall time*2tf 90 to 10%, VR=7.5 V
RL=10 kΩ, λ=560 nm - 2.5 - ms
*2: Rise/fall time measurement method (page 2)
Energy-saving sensor for TVs, etc.
Light dimmers for liquid crystal panels
Various types of light level measurement
Spectral response close to human eye sensitivity
is attained without using visual-compensated fi lter.
Operation just as easy to use as a photodiode
Lower output-current fl uctuations compared with
phototransistors and CdS photoconductive cells.
Low output fl uctuations for light sources producing the
same illuminance at different color temperatures
Excellent linearity
Features Applications
2
Photo IC diode S9648-100
Spectral response Linearity
0.1
0.2
0.3
0.4
0.5
0.7
0.9
0.6
0.8
1.0
0
200 400 600 800
Wavelength (nm)
1000 1200
Relative sensitivity
(Typ. Ta=25 °C, VR=5 V)
S9648-100
Human eye
sensitivity
Illuminance (lx)
(Typ. Ta=25 °C, VR=5 V, 2856 K)
Photocurrent
0.1 1 10
10 nA
100 nA
1 μA
10 mA
1 mA
100 μA
10 μA
100 1000
KPICB0085EB
KPICC0041EA
KPICB0086EB
Pulsed light
from LED
(λ=560 nm)
Vout
Load
resistance RL
7.5 V
90% 2.5 V
10%
Vout
tr tf
0.1 μF
3
Photo IC diode S9648-100
Operating circuit example
KPICC0091EC
The photo IC diode must be reverse-biased so that a positive potential is applied to the cathode.
To eliminate high-frequency components, we recommend placing a load capacitance CL in parallel with load resistance RL as a
low-pass fi lter.
Cutoff frequency (fc) 2πCLRL
1
≈
Photodiode
for signal offset
Cathode
Anode
CLRL
Vout
Reverse bias
power supply
The drawing surrounded
by the dotted line shows
a schematic diagram of
the photo IC.
Current amp
(Approx. 30000 times)
Photodiode
for signal detection
Internal protection
resistance
(Approx. 150 Ω)
Rise/fall times vs. load resistance
0.1
1
10
100
0.01
100 10 k1 k 100 k
Load resistance
(
Ω
)
1 M
Rise/fall times (ms)
(Typ. Ta=25 °C, VR=7.5 V, λ=560 nm, Vo=2.5 V)
Rise time
Fall time
KPICB0077EB
4
Operating voltage, output characteristics
RL
(external resistance)
IL
Photo IC
diode
Rin=150 Ω
(internal protection resistance) Vcc
Vbe(ON)=0.7 V
(photodiode, current amplifier)
KPICC0128EB
KPICB0107EA
Figure 2 shows photocurrent vs. reverse voltage characteristics (light source: LED) measured using the circuit shown in Figure 1.
Output curves are plotted at different illuminance levels equivalent to a standard source A. The output curves start rising at a reverse
voltage of approx. 0.7 V (rising voltage).
Photo IC diode contains an internal resistance of approx. 150 Ω to protect against excessive current. The reverse voltage VR of a photo
IC diode is the sum of Vbe(ON) and the voltage drop across the protective resistance Rin.
VR = Vbe(ON) + IL × Rin ............ (1)
[Figure 1] Measurement circuit
[Figure 2] Photocurrent vs. reverse voltage
300 lx
600 lx
880 lx
1150 lx
1380 lx
1600 lx
Reverse voltage (V)
012345
(Typ. Ta=25 °C)
Photocurrent (mA)
5
4
3
2
1
0
Saturation
region
Approx. 1260 lx
Internal protective resistance
Rin: Approx. 150 Ω
Saturation
region
Approx. 650 lx
Rising voltage
Load line
Vcc=3 V, RL=1 kΩ
Load line
Vcc=5 V, RL=1 kΩ
The voltage drop (VL) caused by the external resistance is expressed by the following equation and is shown as load lines in Figure 2.
VL = Vcc - IL × RL ............ (2)
In Figure 2, the intersections between the output curves and load lines indicate the saturation region. Maximum detectable light levels
can be estimated from this saturation point. Since the maximum detectable light level is determined by the power supply voltage (Vcc)
and load resistance (RL), change them to meet the required operating conditions.
Note: Vbe(ON) and internal protection resistance have a respective temperature dependence of approximately -2 mV/°C and 0.1 %/°C.
Photo IC diode S9648-100
5
Photo IC diode S9648-100
Cat. No. KPIC1057E05 Jul. 2012 DN
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact
us for the delivery specification sheet to check the latest information.
Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or
a suffix "(Z)" which means developmental specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product
use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
Information described in this material is current as of July, 2012.
KPICA0057ED
Dimensional outline (unit: mm)
Anode
Cathode
Lead surface finish: Sn plating
Packing: Polyethylene pack [anti-static type]
(500 pcs/pack)
Fillet
Tie-bar cut point (including burr, no plating)
0.75 ± 0.25
1.5 max.
(4.3)
25.4 min.
3.5 ± 0.3
(1.0)
1.0 min.
2.54 ± 0.5
(specified at lead root)
(2 ×) 1.0 max.
(
2 ×
) 1.0 max.
(2 ×) 0.5
Sn plated lead
5.0 ± 0.2
Center of photosensitive area
Photosensitive area 0.46 × 0.32
0.13
Photosensitive
surface
