File No. 56 RGA Solid State Division RF Power Transistors 2N3262 RCA-2N3262 is atriple-diffused planar trans- istor of the silicon n-p-n type intended for high- voltage, high-frequency pulse amplifiers and high- voltage saturated switches in military and industrial equipment. The high-current switching capability of the 2N3262 makes it especially suitable for memory-core driver applications. The 2N3262 utilizes the JEDEC TO-39 package which is identical to the JEDEC TO-5 package except its leads have a minimum length of 0.5", @ High Voltage Ratings @ Fast Rise Time at High Collector Currents 20 nsec rise time (max.} at | ampere For High-Voltage, High-Speed . Switching and . Pulse-Amplifier Applications JEDEC TO-39 @ High Power Dissipation @ Low Collector to Emitter Saturation Voltage at High Collector Currents 0.6 volts (max. ) at | ampere Maximum Ratings, 4bsolute-Maxinum Values? At case vemperatures 98, above 259 C , . . . Derate linearly (50 mw/C) to 175 C Collector-to-Base Voltage, Vong + 100 max. volts At free-air temperatures Collector-to-Emitter Voltage up to 2590C . . ewe ee ee l max. watt leverse bias) VCEX At free-air temperatures For Vep= 1.5 volts... ... .- 4100 max. volts above 25C. . . . . Derate linearly (5.71 mw/C) With base open (sustaining to 175 C voltage), Vcpo(sus) .. ee eee 80 max. volts Temperature Range: Emitter-to-Base Voltage, VERO... . 4 max. volts Storage... 4 eee ew wwe -65t04t200 C Collector Current, Ic... ... +. 1.5 max. amperes Operating (Junction). ee ee we ee 265t0+200 C Transistor Dissipation, Pr: Lead Temperature: At case Semparatures 1/16" + 1/32" from seating up to 25C . eee www we + 875 max. watts surface for 10 sec. max... .. 230 C Electrical Characteristics, Case Tenperature = 25 C Unless Otherwise Specified TEST COND!TIONS LIMITS oe oc oc Characteristic Symbol! ] Collector | Emitter Current . Units Volts Volts | (Milliamperes) Min, | Max. Vos] ce | Yes le | IB] ic Collector-Cutoff Current at Tpa = 25 C Topo | 30 0.1] uo Emitter-Cutoff Current TEBO 3 0 100 ua Collector-to-Emitter Sustaining Voltage with External Base-to-Emitter Resistance (Rpg) = 10 ohms Veep(sus) 300" | 90 volts Collector-to-Emitter Sustaining Voltage VcEo(sus) 0|500" | 80 volts Reverse Collector-to-Emitter Breakdown Voltage BVcEX 1.5 0.25 | 100 volts Emitter-to-Base Breakdown Voltage BVEBO 0.1 0 4 volts Base-to-Emitter Saturation Voltage Vpe (sat) 100 1000 1.4 |volts Collector-to-Emitter Saturation Voltage VcE(sat) 100 }1000 0.6 |volts IDC Forward Current Transfer Ratio hee 4 500] 40 Input Capacitance (at 1 We) Cib 3 0 300 pf feedback Capacitance (at 1 Mc) Che 28 9 20 pf Pulse-Amplifier Rise Time (See Figs. 13&14) ty Vo780 25 20 | nsec Sat. Switch Turn-On Time . Delay Time * Rise Time (See Figs. 8&10) ton 28 Tay JB2] 1000 40 | nsec Sat. Switch Turn-Off Time Tpiel Storage + Fall Time (See Figs, 8&10) tore 28 Bie? 750 | nsec Forward Current Transfer Ratio (at 50 Mc) hee 28 100! 3 * Pulsed; pulse duration = 15 usec; duty factor = 0.15%, 48 5-66 File No. 56 TYPICAL TRANSFER CHARACTERISTICS COMMON-EMITTER CIRCUIT, BASE INPUT. |]=> FREE-AIR TEMPERATURE (Tra)=25C COLLECTOR MILLIAMPERES (Ic) 92CS12454 Fig.1 COMMON~EMITTER CIRCUIT, BASE INPUT. FREEAIR TEMPERATURE (Tpa}=25 C COLLECTOR MILLIAMPERES (Ic) 2 COLLECTORTOEMITTER VOLTS (Vc) 92CS~12456 Fig. 3 COMMON-EMITTER CIRCUIT, BASE INPUT, FREE-AIR TEMPERATURE (Tra) = 25C o w # = =< a Zz = & S Fr o w = 2 5 o 04 BASE~TO-EMITTER VOLTS (Vge) g2cs-12449 Fig.5 2N3262 TYPICAL OPERATION CHARACTERISTICS CIRCUIT, BASE INPUT, ye Ns S Sse 100 1000 COLLECTOR MILLIAMPERES (Ic) Fig. 2 92CS 12450 COLLECTORTOEMITTER VOLTS (Vcg)=28 CASE TEMPERATURE (T)=25C FREQUENCY =50 Mc GAIN BANDWIDTH PRODUCT (f7)Mc 100 COLLECTOR MILLIAMPERES (Ic) 92C$ 12457 Fig.4 FREQUENCY =! Mc CASE TEMPERATURE (T}*25C COLLECTOR TS (VcR) g2csi2as3 Fig.6 File No. 56 PULSE-AMPLIFIER TEST CIRCUIT OUTPUT TO OSCILLOSCOPE INPUT PULSE tp 2n SEC, cy O01 pf Hh 100, OHMS Ro 101 OHMS Wf od j] cog B = -VeE = voc = +80V (NOTE 1) 92CS-12464 NOTE I: Veg ADJUSTED FOR tp = 35 ma WITH NO INPUT. Fig.13 DIMENSIONAL. OUTLINE JEDEC T0-39 370 MAX. 335 MIN. OA 335 MAX. 305 MIN. mat 260 MAX. 40 MIN a ) _Lecarme PLANE mer Tor f DETAILS OF OUT LINE IN THIS 0 0 i ZONE OPTIONAL 3 LEADS O12 MAX. -200 DIA.~ (NOTE 4) 100 QUTSIDE ~+ CORNER RADII 007 MAX. DIMENSIONS .034 MAX. IN INCHES 028 MIN, NY 045 MAX. INDEX TAB 029 MIN. 92cs-12742 NOTE 1: THIS ZONE IS CONTROLLED FOR AUTOMATIC HANDLING. THE VARIATION [LN ACTUAL DIAMETER WITHIN THE ZONE SHALL NOT EXCEED 0.010", NOTE 2: THE SPECIFIED LEAD DIAMETER APPLIES {N THE ZONE BETWEEN 0.050" AND 0.250" FROM THE SEATING PLANE, BETWEEN 0.250" AND 1.5", A MAXIMUM OF 0.021" DIAMETER IS HELO. OUTSIDE OF THESE ZONES THE LEAD OIAMETER IS NOT CONTROLLED. NOTE 3: MEASURED FROM MAX. DIAMETER OF THE ACTUAL DEVICE. NOTE 4: LEADS HAVING MAXIMUM DIAMETER (0.019") MEASURED IN GAUGING PLANE OF 0,054" + 0.001" 0.000" BELOW THE SEATING PLANE OF THE DEVICE SHALL BE WITHIN 0.007" OF THEIR TRUE LOCATIONS RELATIVE TO A MAXIMUM-WIDTH TAB. 51 2N3262 WAVE FORM FOR PULSE-AMPLIFIER TEST CIRCUIT TOV 20v OUTPUT VOLTAGE 92CS-12462 Fig.14 TERMINAL DIAGRAM 8 LEAD 1- EMITTER LEAD 2 BASE LEAD 3 COLLECTOR, CASE Cc, CASE