Reflective Object Sensor QRD1113, QRD1114 Description The QRD1113 and QRD1114 reflective sensors consist of an infrared emitting diode and an NPN silicon phototransistor mounted side by side in a black plastic housing. The on-axis radiation of the emitter and the on-axis response of the detector are both perpendicular to the face of the QRD1113 and QRD1114. The phototransistor responds to radiation emitted from the diode only when a reflective object or surface is in the field of view of the detector. www.onsemi.com Features * * * * * * Phototransistor Output No-Contact Surface Sensing Unfocused for Sensing Diffused Surfaces Compact Package Daylight Filter on Sensor This Device is Pb-Free and RoHS Compliant REFLECTIVE RECTANGULAR SENSOR CASE 100BY PIN ASSIGNMENT Emitter 2 Anode 3 1 Collector 4 Cathode ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. (c) Semiconductor Components Industries, LLC, 2005 October, 2019 - Rev. 3 1 Publication Order Number: QRD1114/D QRD1113, QRD1114 ABSOLUTE MAXIMUM RATINGS (Values are at TA = 25C unless otherwise specified) Parameter Symbol Min. TOPR Operating Temperature -40 to +85 TSTG Storage Temperature -40 to +100 TSOL-I Lead Temperature (Solder Iron) (Notes 1, 2, 3) 240 for 5 s TSOL-F Lead Temperature (Solder Flow) (Notes 1, 2) 260 for 10 s Unit C EMITTER IF Continuous Forward Current 50 mA VR Reverse Voltage 5 V PD Power Dissipation 100 mW VCEO Collector-Emitter Voltage 30 V VECO Emitter-Collector Voltage 5 V 100 mW SENSOR PD Power Dissipation (Note 4) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. RMA flux is recommended. 2. Methanol or isopropyl alcohols are recommended as cleaning agents. 3. Soldering iron tip 1/16 inch (1.6 mm) minimum from housing. 4. Derate power dissipation linearly 1.33 mW/C. ELECTRICAL/OPTICAL CHARACTERISTICS (Values are at TA = 25C unless otherwise specified) Parameter Symbol Test Conditions Min. Typ. Max. Unit INPUT (EMITTER) VF Forward Voltage IF = 20 mA 1.7 V IR Reverse Leakage Current VR = 5 V 100 mA Peak Emission Wavelength IF = 20 mA PE 940 nm OUTPUT (SENSOR) BVCEO Collector-Emitter Breakdown IC = 1 mA 30 V BVECO Emitter-Collector Breakdown IE = 0.1 mA 5 V Dark Current VCE = 10 V, IF = 0 mA IC(ON) QRD1113 Collector Current IC(ON) QRD1114 Collector Current IF = 20 mA, VCE = 5 V, D = 0.050 inch (Notes 5, 7) VCE(SAT) Collector Emitter Saturation Voltage IF = 40 mA, IC = 100 mA, D = 0.050 inch (Notes 5, 7) ICX Cross Talk IF = 20 mA, VCE = 5 V, EE = 0 (Note 6) 0.2 tr Rise Time VCE = 5 V, RL = 100 W, IC(ON) = 5 mA 10 ms tf Fall time 50 ms ID 100 nA COUPLED 0.300 mA 1 mA 0.4 V 10.0 mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. D is the distance from the sensor face to the reflective surface. 6. Crosstalk (ICX) is the collector current measured with the indicated current on the input diode and with no reflective surface. 7. Measured using Eastman Kodak natural white test card with 90% diffused reflecting as a reflecting surface. ORDERING INFORMATION Part Number Operating Temperature Package Top Mark Packing Method QRD1113 -40 to +85C QRD1113 Bulk QRD1114 -40 to +85C Reflective Rectangular Sensor PCB Mount www.onsemi.com 2 QRD1114 QRD1113, QRD1114 TYPICAL PERFORMANCE CHARACTERISTICS Figure 1. Forward Voltage vs. Forward Current Figure 2. Normalized Collector Current vs. Forward Current Figure 3. Normalized Collector Current vs. Temperature Figure 4. Normalized Collector Dark Current vs. Temperature www.onsemi.com 3 QRD1113, QRD1114 TYPICAL PERFORMANCE CHARACTERISTICS (Continued) Figure 5. Normalized Collector Current vs. Distance www.onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS REFLECTIVE RECTANGULAR SENSOR PCB MOUNT CASE 100BY ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13408G DATE 30 SEP 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. REFLECTIVE RECTANGULAR SENSOR PCB MOUNT PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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