VISHAY
BAT54-HT3 to BAT54S-HT3
Document Number 85690
Rev. 1.5, 21-Apr-04
Vishay Semiconductors
www.vishay.com
1
12
3
BAT54-HT3
12
3
BAT54C-HT3
Top View
12
3
BAT54A-HT3
12
3
BAT54S-HT3
Top View
17004
Pin 1
Top view
Schottky Diodes
Features
• These diodes feature very low turn-on voltage and
fast switching.
• These devices are protected by a PN junction
guard ring against excessive voltage, such as
electrostatic discharges.
• Space saving LLP package
Mechanical Data
Case:LLP75-3B Plastic Package
Molding Compound Flammability Rating:
UL 94 V-0
Terminals: High temperature soldering guaranteed:
260 °C/10 sec. at terminals
Weight: approx. 5.2 mg
Parts Table
Part Ordering code Marking Remarks
BAT54-HT3 BAT54-HT3-GS08 L4 Tape and Reel
BAT54A-HT3 BAT54A-HT3-GS08 L5 Tape and Reel
BAT54C-HT3 BAT54C-HT3-GS08 L6 Tape and Reel
BAT54S-HT3 BAT54S-HT3-GS08 L7 Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter Test condition Symbol Value Unit
Repetitive peak reverse
voltage=Working peak reverse
voltage
VRRM 30 V
Forward continuous current IF200 mA
Repetitive peak forward current IFRM 300 mA
Surge forward current current IFSM 600 mA
Power dissipation Ptot 230 mW
Parameter Test condition Symbol Value Unit
Thermal resistance junction to
ambiant air
RthJA 430 °C/W
Junction temperature Tj125 °C
Storage temperature range TS- 65 to + 150 °C
www.vishay.com
2
Document Number 85690
Rev. 1.5, 21-Apr-04
VISHAY
BAT54-HT3 to BAT54S-HT3
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Parameter Test condition Symbol Min Ty p. Max Unit
Reverse Breakdown voltage 100 µA pulses V(BR) 30 V
Leakage current Pulse test tp < 300 µs, θ < 2 % at
VR = 25 V
2µA
Forward voltage IF = 0.1 mA, tp < 300 µs, θ < 2 % VF240 mV
IF = 1 mA, tp < 300 µs, θ < 2 % VF320 mV
IF = 10 mA, tp < 300 µs, θ < 2 % VF400 mV
IF = 30 mA, tp < 300 µs, θ < 2 % VF500 mV
IF = 100 mA, tp < 300 µs, θ < 2 % VF1000 mV
Diode capacitance VR = 0 V, f = 1 MHz Ctot 12 pF
Reverse recovery time IF = 10 mA , IR = 10 mA to
IR = 1 mA, RL = 100 Ω
trr 5ns
Fig. 1 Typical Forward Voltage Forward Current at Various
Temperatures
Fig. 2 Typical Variation of Reverse Current at Various
Temperatures
gbat54-ht3_01
°C25
°C= 125T
j
°C40
1000
100
10
1
0.1
0.01 1.2 1.41.00.80.60.40.20
IinmA
F
V
F
in V
gbat54-ht3_02
°C= 125T
j
°C100
°C75
°C50
°C25
1000
100
10
1
0.1
0.01
IinA
R
µ
0 5 10 15 20 3025
V
R
in V
Fig. 3 Typical Capacitance °C vs. Reverse Applied Voltage VR
gbat54-ht3_03
4 8 12 160
4
6
8
10
12
14
0
2
20 24 28
CinpF
V
R
in V
VISHAY
BAT54-HT3 to BAT54S-HT3
Document Number 85690
Rev. 1.5, 21-Apr-04
Vishay Semiconductors
www.vishay.com
3
Package Dimensions in mm
18058
ISO Method E
1.6
1.6
1
1
0.25 (6x)
0.50.7 0.6
0.250.15
123
654
Top View
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4
Document Number 85690
Rev. 1.5, 21-Apr-04
VISHAY
BAT54-HT3 to BAT54S-HT3
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
