Advanced Analogic Technologies, Inc.
1250 Oakmead Pkwy, Suite 310, Sunnyvale, CA 94086
(408)524-9684 Fax (408)524-9689
AHK6030L
30V N-Channel Power MOSFET
6030LX.2001.05.0.91
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Description Conditions Min Typ Max Units
DC Characteristics
BVDS
Drain-Source Breakdown
Voltage VGS=0V, ID=250µA30 V
VGS=10V, ID=10A 9.5 10.5
RDS(ON) Drain-Source ON-Resistance VGS=4.5V, ID=5A 14 18 mΩ
ID(ON) On-State Drain Current VGS=10V ,VDS=5V (Pulsed) 56 A
VGS(th) Gate Threshold Voltage VGS=VDS,I
D=250µA1.0 V
IGSS Gate-Body Leakage Current VGS=±20V, VDS=0V ±100 nA
VGS=0V,VDS=30V 1
IDSS Drain Source Leakage Current VGS=0V,VDS=30V, TA=70°C25
µA
gfs Forward Transconductance VDS=15V, ID=10A 19 S
Dynamic Characteristics
QGTotal Gate Charge 45 65 nC
QGS Gate-Source Charge 9 nC
QGD Gate-Drain Charge
VDS=15V, ID=15A, VGS=10V
7.5 nC
tD(ON) Turn-ON Delay 17 30 ns
tRTurn-ON Rise Time 11 20 ns
tD(OFF) Turn-OFF Delay 60 100 ns
tFTurn-OFF Fall Time
VDD=15V, VGS=10V, ID=15A,
RG=6Ω
45 80 ns
Source-Drain Diode Characteristics
VSD Source-Drain Forward Voltage VGS=0, IS=28A 1 1.5 V
ISContinuous Diode Current 23 A
Notes:
(a) Based on thermal dissipation from junction to case. RθJC +R
θCA =R
θJA where the case thermal reference is defined as
the solder mounting surface of the drain pins. RθJC is guaranteed by design, however RθCA is determined by the PCB
design. Package current is limited to 28A DC.
(b) With minimum copper pads on 1 x 1 inch FR4 board.