HGTP14N36G3VL - Harris Semiconductor

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.

SEMICONDUCTOR

HGTP14N36G3VL,

HGT1S14N36G3VL,

HGT1S14N36G3VLS

14A, 360V N-Channel,

Logic Level, Voltage Clamping IGBTs

Packages

JEDEC TO-220AB

JEDEC TO-262AA

JEDEC TO-263AB

Terminal Diagram

N-CHANNEL ENHANCEMENT MODE

EMITTER

COLLECTOR

GATE

COLLECTOR

(FLANGE)

EMITTER

COLLECTOR

GATE

COLLECTOR

(FLANGE)

EMITTER

GATE

COLLECTOR

(FLANGE)

EMITTER

GATE

COLLECTOR

Features

• Logic Level Gate Drive

• Internal Voltage Clamp

• ESD Gate Protection

•T

= 175oC

• Ignition Energy Capable

Description

This N-Channel IGBT is a MOS gated, logic level device

which is intended to be used as an ignition coil driver in auto-

motive ignition circuits. Unique features include an active

voltage clamp between the collector and the gate which pro-

vides Self Clamped Inductive Switching (SCIS) capability in

ignition circuits. Internal diodes provide ESD protection for

the logic level gate. Both a series resistor and a shunt

resister are provided in the gate circuit.

The development type number for this device is TA49021.

PACKAGING AVAILABILITY

PART NUMBER PACKAGE BRAND

HGTP14N36G3VL TO-220AB 14N36GVL

HGT1S14N36G3VL TO-262AA 14N36GVL

HGT1S14N36G3VLS TO-263AB 14N36GVL

NOTE: When ordering, use the entire part number . Add the sufﬁx 9A

to obtain the TO-263AB variant in the tape and reel, i.e.,

HGT1S14N36G3VLS9A.

June 1995

File Number 4008

Absolute Maximum Ratings TC = +25oC, Unless Otherwise Speciﬁed HGTP14N36G3VL,

HGT1S14N36G3VL,

HGT1S14N36G3VLS UNITS

Collector-Emitter Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCER 390 V

Emitter-Collector Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVECS 24 V

Collector Current Continuous at VGE = 5V, TC = +25oC. . . . . . . . . . . . . . . . . . . . . . . IC25 18 A

at VGE = 5V, TC = +100oC. . . . . . . . . . . . . . . . . . . . . .IC100 14 A

Gate-Emitter Voltage (Note). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±10 V

Inductive Switching Current at L = 2.3mH, TC = +25oC . . . . . . . . . . . . . . . . . . . . . . .ISCIS 17 A

at L = 2.3mH, TC = + 175oC . . . . . . . . . . . . . . . . . . . . . .ISCIS 12 A

Collector to Emitter Avalanche Energy at L = 2.3mH, TC = +25oC. . . . . . . . . . . . . . . EAS 332 mJ

Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD100 W

Power Dissipation Derating TC > +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.67 W/oC

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .TJ, TSTG -40 to +175 oC

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL260 oC

Electrostatic Voltage at 100pF, 1500Ω. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ESD 6 KV

NOTE: May be exceeded if IGEM is limited to 10mA.

3-56

Speciﬁcations HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS

Electrical Speciﬁcations TC = +25oC, Unless Otherwise Speciﬁed

PARAMETERS SYMBOL TEST CONDITIONS

LIMITS

UNITSMIN TYP MAX

Collector-Emitter Breakdown Voltage BVCER IC = 10mA,

VGE = 0V

RGE = 1kΩ

TC = +175oC 320 355 400 V

TC = +25oC 330 360 390 V

TC = -40oC 320 350 385 V

Gate-Emitter Plateau Voltage VGEP IC = 7A,

VCE = 12V TC = +25oC - 2.7 - V

Gate Charge QG(ON) IC = 7A,

VCE = 12V TC = +25oC - 24 - nC

Collector-Emitter Clamp Breakdown

Voltage BVCE(CL) IC = 7A

RG = 1000ΩTC = +175oC 350 380 410 V

Emitter-Collector Breakdown Voltage BVECS IC = 10mA TC = +25oC2428-V

Collector-Emitter Leakage Current ICER VCE = 250V

RGE = 1kΩTC = +25oC-- 25µA

= +175oC - - 250 µA

Collector-Emitter Saturation Voltage VCE(SAT) IC = 7A

VGE = 4.5V TC = +25oC - 1.25 1.45 V

TC = +175oC - 1.15 1.6 V

IC = 14A

VGE = 5V TC = +25oC - 1.6 2.2 V

TC = +175oC - 1.7 2.9 V

Gate-Emitter Threshold Voltage VGE(TH) IC = 1mA

VCE = VGE

TC = +25oC 1.3 1.8 2.2 V

Gate Series Resistance R1TC = +25oC - 75 - Ω

Gate-Emitter Resistance R2TC = +25oC 102030kΩ

Gate-Emitter Leakage Current IGES VGE = ±10V ±330 ±500 ±1000 µA

Gate-Emitter Breakdown Voltage BVGES IGES = ±2mA ±12 ±14 - V

Current Turn-Off Time-Inductive Load tD(OFF)I +

tF(OFF)I

IC = 7A, RL = 28Ω

RG = 25Ω, L = 550µH,

VCL = 300V, VGE = 5V,

TC = +175oC

-7-µs

Inductive Use Test ISCIS L = 2.3mH,

VG = 5V, TC = +175oC12--A

= +25oC17--A

Thermal Resistance RθJC - - 1.5 oC/W

3-57

HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS

Typical Performance Curves

FIGURE 1. TRANSFER CHARACTERISTICS FIGURE 2. SATURATION CHARACTERISTICS

FIGURE 3. COLLECTOR-EMITTER CURRENT AS A FUNCTION

OF SATURATION VOLTAGE FIGURE 4. COLLECTOR-EMITTER CURRENT AS A FUNCTION

OF SATURATION VOLTAGE

FIGURE 5. SATURATION VOLTAGE AS A FUNCTION OF

JUNCTION TEMPERATURE FIGURE 6. SATURATION VOLTAGE AS A FUNCTION OF

JUNCTION TEMPERATURE

ICE, COLLECTOR-EMITTER CURRENT (A)

VGE, GATE-TO-EMITTER VOLTAGE (V)

PULSE DURATION = 250µs, DUTY CYCLE <0.5%, VCE = 10V

21345

+25oC

+175oC

-40oC

ICE, COLLECTOR-EMITTER CURRENT (A)

VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)

PULSE DURATION = 250µs, DUTY CYCLE <0.5%, TC= +25oC

0246810

10V 5.0V

4.5V

3.0V

2.5V

4.0V

3.5V

VCE(SAT), SATURATION VOLTAGE (V)

ICE, COLLECTOR EMITTER CURRENT (A)

53210

TC = +175oCVGE = 5.0V

VGE = 4.0V

VGE = 4.5V

+25oC

ICE, COLLECTOR EMITTER CURRENT (A)

VCE(SAT), SATURATION VOLTAGE (V)

+175oC

-40oC

01234 5

GE = 4.5V

VCE(SAT), SATURATION VOLTAGE (V)

TJ, JUNCTION TEMPERATURE (oC)

-25 +25 +75 +125 +175

1.25

1.15

1.05

1.35

VGE = 4.0V

VGE = 4.5V

VGE = 5.0V

ICE = 7A

TJ, JUNCTION TEMPERATURE (oC)

VCE(SAT), SATURATION VOLTAGE (V)

-25 +25 +75 +125 +175

2.00

1.75

1.50

VGE = 4.5V

VGE = 4.0V

VGE = 5.0V

ICE = 14A

2.25

3-58

HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS

FIGURE 7. COLLECTOR-EMITTER CURRENT AS A FUNCTION

OF CASE TEMPERATURE FIGURE 8. NORMALIZED THRESHOLD VOLTAGE AS A

FUNCTION OF JUNCTION TEMPERATURE

FIGURE 9. LEAKAGE CURRENT AS A FUNCTION OF

JUNCTION TEMPERATURE FIGURE 10. TURN-OFF TIME AS A FUNCTION OF

JUNCTION TEMPERATURE

FIGURE 11. SELF CLAMPED INDUCTIVE SWITCHING

CURRENT AS A FUNCTION OF INDUCTANCE

FIGURE 12. SELF CLAMPED INDUCTIVE SWITCHING ENERGY

AS A FUNCTION OF INDUCTANCE

Typical Performance Curves

(Continued)

+25 +50 +75 +125 +150

TC, CASE TEMPERATURE (oC)

ICE, COLLECTOR-EMITTER CURRENT (A)

0+100 +175

18 VGE = 5V

TJ, JUNCTION TEMPERATURE (oC)

-25 +25 +75 +125 +175

VGE(TH), NORMALIZED THRESHOLD VOLTAGE

0.6

0.7

0.8

0.9

1.0

1.1

1.2 ICE = 1ma

TJ, JUNCTION TEMPERATURE (oC)

LEAKAGE CURRENT (µA)

1E-1

1E0

1E1

1E2

1E3

1E4

+20 +60 +100 +140 +180

VECS = 20V

VCES = 250V

TJ, JUNCTION TEMPERATURE (oC)

t(OFF)I, TURN OFF TIME (µs)

6.0

5.0

4.5

4.0

3.5

3.0+25 +50 + 75 +100 +150 +175+125

5.5

6.5 VCE = 300V, VGE = 5V

RGE = 25Ω, L = 550µH

7.0

RL = 37Ω,ICE = 7A

L, INDUCTANCE (mH)

0246810

IC, INDUCTIVE SWITCHING CURRENT (A)

+25oC

+175oC

VGE = 5V

0246810

L, INDUCTANCE (mH)

EAS, ENERGY (mJ)

150

200

250

300

350

400

450

500

550

600

650

+25oC

+175oC

VGE = 5V

3-59

HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS

FIGURE 13. CAPACITANCE AS A FUNCTION OF COLLECTOR-

EMITTER VOLTAGE FIGURE 14. GATE CHARGE WAVEFORMS

FIGURE 15. NORMALIZED TRANSIENT THERMAL

IMPEDANCE, JUNCTION TO CASE FIGURE 16. BREAKDOWN VOLTAGE AS A FUNCTION OF

GATE-EMITTER RESISTANCE

Test Circuits

FIGURE 17. SELF CLAMPED INDUCTIVE SWITCHING

CURRENT TEST CIRCUIT FIGURE 18. CLAMPED INDUCTIVE SWITCHING TIME

TEST CIRCUIT

Typical Performance Curves

(Continued)

C, CAPACITANCE (pF)

0 5 10 15 20 25

VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)

400

600

800

1400

1600

1800

2000

CRES

COES

CIES

1200

1000

FREQUENCY = 1MHz

200

QG, GATE CHARGE (nC)

0515 20 25 30

VCE, COLLECTOR-EMITTER VOLTAGE (V)

VGE, GATE-EMITTER VOLTAGE (V)

REF IG= 1mA, RL= 1.7Ω, TC= +25oC

VCE = 12V

VCE = 4V

VCE = 8V

t1, RECTANGULAR PULSE DURATION (s)

10-2

10-1

100

10-5 10-3 10-2 10-1 100101

10-4

0.02

0.05

0.5

ZθJC, NORMALIZED THERMAL RESPONSE

0.2

0.1

0.01

DUTY FACTOR, D = t1 / t2

PEAK TJ = (PDX ZθJC X RθJC) + TC

SINGLE PULSE

RGE, GATE-TO- EMITTER RESISTANCE (Ω)

02000 4000 6000 8000 10000

325

330

335

340

345

350

355

BVCER, COLLECTOR-EMITTER

25oC

175oC

BKDN VOLTAGE (V)

VDD

2.3mH

DUT

RGEN = 25Ω

5V RGEN = 50Ω+

-VCC

DUT

300V

10V

RGE = 50Ω

1/RG = 1/RGEN + 1/RGE

L = 550µH

3-60

HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS

Handling Precautions for IGBT’s

Insulated Gate Bipolar Transistors are susceptible to gate-

insulation damage by the electrostatic discharge of energy

through the devices. When handling these devices, care

should be exercised to assure that the static charge built in

the handler’s body capacitance is not discharged through

the device. With proper handling and application proce-

dures, however, IGBT’s are currently being extensively used

in production by numerous equipment manufacturers in mili-

tary, industrial and consumer applications, with virtually no

damage problems due to electrostatic discharge. IGBT’s can

be handled safely if the following basic precautions are

taken:

1. Prior to assembly into a circuit, all leads should be kept

shorted together either by the use of metal shorting

springs or by the insertion into conductive material such

as †“ECCOSORBD LD26” or equivalent.

2. When devices are removed by hand from their carriers,

the hand being used should be grounded by any suitable

means - for example, with a metallic wristband.

3. Tips of soldering irons should be grounded.

4. Devices should never be inserted into or removed from

circuits with power on.

5. Gate Voltage Rating -The gate-voltage rating of VGEM

may be exceeded if IGEM is limited to 10mA.

† Trademark Emerson and Cumming, Inc

.HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641

4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762

4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690

4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606

4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951

4,969,027