NTE388 (NPN) & NTE68 (PNP)
Silicon Complementary Transistors
General Purpose High Power Audio,
Disk Head Positioner for Linear Applications
Description:
The NTE388 (NPN) and NTE68 (PNP) are complementary silicon power transistors in a TO3 type
package designed for high power audio, disk head positioners, and other linear applications.
Features:
DHigh Safe Operating Area: 2A @ 80V
DHigh DC Current Gain: hFE = 15 Min @ IC = 8A
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO 250V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, VCEX 400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Base Voltage, VCBO 400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEBO 5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC
Continuous 16A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 2) 30A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Base Current, IB5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (TC = +25°C), PD250W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25°C 1.43W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, TJ–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg –65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, RthJC 0.70°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Matched complementary pairs are available upon request (NTE68MCP). Matched comple-
mentary pairs have their gain specification (hFE) matched to within 10% of each other.
Note 2. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage VCEO(sus) IC = 100mA, IB = 0, Note 3 250 – – V
Collector Cutoff Current ICEX VCE = 250V, VBE(off) = 1.5V – – 250 µA
ICEO VCE = 200V, IB = 0 – – 500 µA
Emitter Cutoff Current IEBO VEB = 5V, IC = 0 – – 500 µA
Second Breakdown
Second Breakdown Collector Current IS/b VCE = 50V, t = 0.5s (non–repetitive) 5– – µA
with Base Forward Bias VCE = 80V, t = 0.5s (non–repetitive) 2– – µA
ON Characteristics
DC Current Gain hFE VCE = 4V, IC = 8A 15 –60
VCE = 4V, IC = 16A 5– –
Collector–Emitter Saturation Voltage VCE(sat) IC = 8A, IB = 800mA – – 1.4 V
IC = 16A, IB = 3.2A – – 4.0 V
Base–Emitter On Voltage VBE(on) VCE = 4V, IC = 8A ––2.2 V
Dynamic Characteristics
Current Gain–Bandwidth Product fTVCE = 10V, IC = 1A, ftest = 1MHz 4– – MHz
Output Capacitance Cob VCB = 10V, IE = 0, ftest = 1MHz – – 500 pF
Note 3. Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2%.
1.187
(30.16)
.875 (22.2)
Dia Max
.665
(16.9)
.430
(10.92)
Seating
Plane
.040 (1.02).312 (7.93) Min
.135 (3.45) Max
.350 (8.89)
Emitter
Collector/CaseBase
.215 (5.45)
.525 (13.35) R Max
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
