No TOROLA SC (DIODES/OPTO) B4E D MM 6367255 OO46?76 SLT mMOT? MOTOROLA ws SEMICONDUCOQ| ee TECHNICAL DATA Photo Detectors MRD310* Transistor Output *Motorola Preferred Device The MRD300 and MRD310 are designed for applications requiring radiation sensitivity and stable characteristics. PHOTO DETECTORS Features: TRANSISTOR OUTPUT Popular TO-18 Type Package for Easy Handling and Mounting NPN SILICON Sensitive Throughout Visible and Near Infrared Spectral Range for Wider Application @ Minimum Light Current 4 mA at H = 5 mW/cm, (MRD300) External Base for Added Control @ Annular Passivated Structure for Stability and Reliability Applications: @ Industrial Processing and Control @ Light Modulators @ Shaft or Position Readers @ Punched Card Readers Optical Switching @ Logic Circuits @ Remote Control Counters 1 CASE 82-05 METAL STYLE 1 MAXIMUM RATINGS (Ta = 25C unless otherwise noted) v4 Rating Symbol Value Unit Collector-Emitter Voltage Vceo 50 Volts Emitter-Collector Voltage VECO 7 Volts Collector-Base Voltage VcBO 80 Volts Total Device Dissipation @ Ta = 25C PD 250 mw Derate above 25C 227 mwrc Operating Temperature Range Ta 55 to +125 C Storage Temperature Range Tstg 65 to +150 C STATIC ELECTRICAL CHARACTERISTICS (Tg = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector Dark Current (Vcg = 20 V, H ~ 0) Ta = 25C IcEO _ 5 25 nA Ta = 100C _ 4 _ BA Collector-Base Breakdown Voltage (Ic = 100 A) V(BRICBO 80 120 ad Volts Collector-Emitter Breakdown Voltage (I = 100 A) V(BR)CEO 50 85 _ Volts Emitter-Collector Breakdown Voltage (Ig = 100 A) ViBRIECO 7 85 _ Volts OPTICAL CHARACTERISTICS (Ta = 25C unless otherwise noted) Light Current MRD300 IL 4 7 _ mA (Vcc = 20 V, RL = 10 Ohms) Note 1 MRD310 1 35 Light Current MRD300 IL ~ 25 _ mA (Vcc = 20 V, RL = 100 Ohms) Note 2 MRD310 _ 08 _ Photo Current Rise Time (Note 3} tr _ 2 2.5 BS (Ry = 100 Ohms, tL = 1 mA peak) Photo Current Fall Time (Note 3) tf _ 25 4 Bs (RL = 100 Ohms, IL = 1 mA peak) NOTES 1 Radiation flux density (H) equal to 5 mWicm2 emitted from a tungsten source at a color temperature of 2870 K 2 Radiation flux density (H} equal to 05 mWicm2 (pulsed) from a GaAs (gallium-arsenide) source at A = 940 nm 3 For unsaturated response time measurements, radiation is provided by pulsed GaAs (galltum-arsenide) light-emitting diode (A ~ 940 nm} with a pulse width equal to or greater than 10 micraseconds (see Figure 2) l_ = 1 mA peak 7-16 MOTOROLA SC (DIODES/OPTO) BYE D MM 6367255 008677? 856 MMOT? MRD300, MRD310 TYPICAL CHARACTERISTICS nw 3 > np Voc = 20V RL = 00 TUNGSTEN SOURCE TEMP = 2870K MRD310 wo IL, LIGHT CURRENT (mA) - 05 1 2 5 40 H, RADIATION FLUX DENSITY (mWcm2} 2 Figure 1. Light Current versus Irradiance De IL, (NORMALIZED) ooo oe oN F&F mM @o = NORMALIZED TO Ta = BC -10 7 -50 -25 0 ras) 50 75 = 100 Ta, AMBIENT TEMPI RATURE (C) 126 Figure 3. Normalized Light Current versus Temperature te, PHOTO CURRENT FALL TIME (5) 02 05 1 2 3 5 IL, LIGHT CURRENT (mA) 20 Figure 5. Falt Time versus Light Current 150 TUNGSTEN SOURCE COLOR TEMP = 2870K YmA\| 2mA Veg, COLLECTOR EMITTER VOLTAGE (VOLTS) 05 1 2 10 H, RADIATION FLUX DENSITY (mWicm2) 20-30 Figure 2. Collector-Emitter Saturation Characteristic Ta = 25C a = - 2 = EL = a & 2? Qo e oa 02 06 1 2 5 1a 20 iL, LIGHT CURRENT (maj Figure 4. Rise Time versus Light Current 40 =< 10 = E a i z = 2 oOo xe 01 a a S oa 2 z B 000 oOo S 00001 0.00001 7-17 2 0 Ta, AMBIENT TEMPERATURE (C) 25 50 75 100128 Figure 6. Dark Current versus Temperature MOTOROLA SC (DIODES/0PTO) B4E D MM 6367255 0086778 292 MEMOT? MRD300, MRD310 100 2 So w 2 5 6 2 wm g Fe oo S > & 4 & z am ac 20 0 04 05 06 07 08 a9 1 W142 40 30 20 10 a 10 20 30 40 A, WAVELENGTH (2m} ANGLE (DEGREES) Figure 7. Constant Energy Spectral Response Figure 8. Angular Response Voc = 1mA p=tm _ NC \ 10% OUTPUT Figure 9. Pulse Response Test Circuit and Waveform 7-18