MICROWAVE POWER GaAs FET TIM7785-60SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 36.5dBm Single Carrier Level n HIGH POWER P1dB=48.0dBm at 7.7GHz to 8.5GHz n HIGH GAIN G1dB=6.0dB at 7.7GHz to 8.5GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25C ) CHARACTERISTICS SYMBOL Output Power at 1Db Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise P1dB G1dB IDS1 G CONDITIONS UNIT MIN. TYP. MAX. dBm 47.0 48.0 dB 5.0 6.0 A dB % dBc -42 13.2 36 -45 15.0 0.8 A C 11.8 100 UNIT S MIN. MAX. TYP. 20 V -1.0 -1.8 -3.0 A 38 V -5 C/W 0.6 0.8 VDS= 10V f = 7.7 to 8.5GHz IDSset=9.5A add IM3 IDS2 Tch Two-Tone Test Po=36.5dBm (Single Carrier Level) (VDS X IDS + Pin - P1dB) X Rth(c-c) Recommended Gate Resistance(Rg) : 28 (Max.) ELECTRICAL CHARACTERISTICS ( Ta= 25C ) CHARACTERISTICS Transconductance Saturated Drain Current IDSS Gate-Source Breakdown Voltage Thermal Resistance VGSO CONDITIONS VDS= 3V IDS= 12.0A VDS= 3V IDS= 200mA VDS= 3V VGS= 0V IGS= -1.0mA Rth(c-c) Channel to Case Pinch-off Voltage SYMBOL gm VGSoff u The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Jul. 2006 TIM7785-60SL ABSOLUTE MAXIMUM RATINGS ( Ta= 25C ) CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS V -5 Drain Current IDS A 20 Total Power Dissipation (Tc= 25 C) PT W 187.5 Channel Temperature Tch C 175 Storage Temperature Tstg C -65 to +175 PACKAGE OUTLINE (2-16G1B) 0.70.15 2.5 MIN. Unit in mm 4 - C1.0 (1) (1) Gate (2) Source (2) 2.5 MIN. 2.60.3 (2) 17.4 0.4 8.00.2 (3) Drain (3) 20.40.3 5.5 MAX. 2.4 0.3 0.2 MAX. 16.4 MAX. 1.4 0.3 +0.1 0.1 -0.05 24.5 MAX. HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C. 2 TIM7785-60SL RF PERFORMANCE Pout(dBm) Output Power (Pout) vs. Frequency VDS=10V 49 IDS13.2A Pin=42.0dBm 48 47 46 7.7 7.9 8.1 8.3 8.5 Frequency(GHz) Output Power(Pout) vs. Input Power(Pin) 51 freq.=8.5GHz 49 VDS=10V IDSset9.5A 80 Pout Pout(dBm) 48 70 47 60 46 50 add 45 40 44 30 43 20 42 10 38 40 42 Pin(dBm) 3 44 add(%) 50 TIM7785-60SL Power Dissipation(PT) vs. Case Temperature(Tc) PT(W) 200 100 0 0 40 80 120 160 200 40 42 Tc( C ) IM3 vs. Power Characteristics -10 VDS=10V IDSset9.5A -20 freq.=8.5GHz f=5MHz IM3(dBc) -30 -40 -50 -60 32 34 36 38 Pout(dBm) @Single carrier level 4