MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR
TIM7785-60SL
TECHNICAL DATA
FEATURES
n
LOW INTERMODULATION DISTORTION
n
HIGH GAIN
IM3=-45 dBc at Pout= 36.5dBm G1dB=6.0dB at 7.7GHz to 8.5GHz
Single Carrier Level
n
BROAD BAND INTERNALLY MATCHED FET
n
HIGH POWER
n
HERMETICALLY SEALED PACKAGE
P1dB=48.0dBm at 7.7GHz to 8.5GHz
RF PERFORMANCE SPECIFICATIONS ( Ta= 25
°
C )
CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX.
Output Power at 1Db Gain
Compression Point P
1dB
dBm 47.0 48.0
Power Gain at 1dB Gain
Compression Point G
1dB
dB 5.0 6.0
Drain Current I
DS1
A
13.2 15.0
Gain Flatness
∆
G
dB
±
0.8
Power Added Efficiency
η
add
V
DS
= 10V
f = 7.7 to 8.5GHz
I
DS
set=9.5A
%
36
3rd Order Intermodulation
Distortion IM
3
dBc -42 -45
Drain Current I
DS2
Two-Tone Test
Po=36.5dBm
(Single Carrier Level)
A
11.8
Channel Temperature Rise
∆
Tch
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
°
C
100
Recommended Gate Resistance(Rg) : 28
Ω
(Max.)
ELECTRICAL CHARACTERISTICS ( Ta= 25
°
C )
CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX.
Transconductance gm V
DS
=
3V
I
DS
= 12.0A
S
20
Pinch-off Voltage V
GSoff
V
DS
=
3V
I
DS
= 200mA
V -1.0 -1.8 -3.0
Saturated Drain Current I
DSS
V
DS
=
3V
V
GS
= 0V
A
38
Gate-Source Breakdown
Voltage V
GSO
I
GS
= -1.0mA
V -5
Thermal Resistance R
th(c-c)
Channel to Case
°
C/W
0.6 0.8
u
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use.
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Jul. 2006
2
TIM7785-60SL
ABSOLUTE MAXIMUM RATINGS ( Ta= 25
°
C )
CHARACTERISTICS SYMBOL UNIT RATING
Drain-Source Voltage V
DS
V 15
Gate-Source Voltage V
GS
V -5
Drain Current I
DS
A 20
Total Power Dissipation (Tc= 25
°
C) P
T
W 187.5
Channel Temperature T
ch
°
C 175
Storage Temperature T
stg
°
C -65 to +175
PACKAGE OUTLINE (2-16G1B)
Unit in mm
(1) Gate
(2) Source
(3) Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260
°
C.
5.5 MAX.
0.2 MAX.
0.7
±
0.15
2.4
±
0.3
8.0
±
0.2
1.4
±
0.3
0.1
+0.1
-
0.05
2.5 MIN.
2.5 MIN.
17.4
±
0.4
2.6
±
0.3
20.4
±
0.3
24.5 MAX.
4
–
C1.0
(1)
(2)
(2)
(3)
16.4 MAX.
3
TIM7785-60SL
Output Power (Pout) vs. Frequency
VDS=10V
IDS
≅
13.2A
Pin=42.0dBm
Frequency(GHz)
Output Power(Pout) vs. Input Power(Pin)
freq.=8.5GHz
V
DS
=10V
I
DS
set
≅
9.5A
Pout
η
add
Pin(dBm)
RF PERFORMANCE
51
50
49
48
47
46
45
44
43
42
Pout(dBm)
80
70
60
50
40
30
20
10
η
add(%)
38 40 42 44
49
48
47
46
7.7 7.9 8.1 8.3 8.5
Pout(dBm)
4
TIM7785-60SL
Power Dissipation(PT) vs. Case Temperature(Tc)
Tc(
°
C )
IM3 vs. Power Characteristics
V
DS
=10V
I
DS
set
≅
9.5A
freq.=8.5GHz
∆
f=5MHz
Pout(dBm) @Single carrier level
0
PT(W)
200
100
0
32
-10
-20
-30
-40
-50
-60
IM3(dBc)
40 80 120 160 200
34 36 38 40 42
