MITSUBISHI Nch POWER MOSFET FS10VS-10 HIGH-SPEED SWITCHING USE FS10VS-10 OUTLINE DRAWING Dimensions in mm 4) 10.5MAX. 4.5 < \ 3 \ - 1 el 9! 9 3 gos 3 a3 Ls i wae fee 0:8. al LD GATE (2 DRAIN 3 SOURCE @ DRAIN @VDSS crc r tte t cece c ee cect erence teen eet en ee ennne 500V @rDs (ON) (MAX) sree teeter teeter ence e erences 0.9090 @ lO ccc rte rece cece eee e eter e rete eter e renee rtenaae 10A TO-220S APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, per- sonal computer etc. MAXIMUM RATINGS (Te = 25C) Parameter Conditions Voss Drain-source Vass Gate-source lo Drain current tom Drain current Po Maximum 125 Tech Channel 55 ~ +150 T: 55 ~ +150 1.2 : MITSUBISHI 2 262 ELECTRIC ELECTRICAL CHARACTERISTICS (Teh = 25C) MITSUBISHI Nch POWER MOSFET FS10VS-10 HIGH-SPEED SWITCHING USE Symbol Parameter Test conditions - Limits Unit Min. Typ. Max. V (88) DSS | Drain-source breakdown voltage | ID = 1mA, VGs = OV 500 Vv V (BR) GSS | Gate-source breakdown voltage 1} 1G = +100HA, Vos = OV +30 _ Vv lass Gate leakage current Vas = +25V, Vos = OV - _ +10 nA Ipss Drain current Vos = 500V, Vas = 0V _ _ 1 mA VGS ith) Gate-source threshold voltage lo = ImA, VOS = 10V 2 3 4 v rDS (ON) | Drain-source on-state fesistance | ID = 5A, V@S = 10V _ 0.70 0.90 Q Vps (ON) | Drain-source on-state voltage | ID = 5A, VGS = 10V 3.5 45 v | yts ! Forward transfer'admittance | lp = 5A, V0S = 10V 3.3 5.5 S Ciss input capacitance _ 1100 _ pF Coss Output capacitance Vbs = 25V, VGS = OV, f= 1MHz _ 135 _ pF Crss Reverse transer capacitance = 20 = pF td (on) Turn-on delay time _ 20 _ ns te Rise time VoD = 200V, ID = 5A, VGS = 10V, RGEN = Ras = 500 = 30 = as id (off) Turn-off delay time _ 95 _ ns tt Fail time 35 _ ns VSD Source-drain voltage is = 5A, Vas = OV _ 14 2.0 Rth (ch-c) | Thermal resistance Channel to case _ 1.0 C PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE MAXIMUM SAFE OPERATING AREA 200 5 ~ 3 = 2 tw=1 a 160 = oy i 2 10 z 5 2 120 B 3 Ee ii < fr 2 5 5 400 Do 80 37 z < wi 3 = 40 B 2b Tc= 28C o Pulse a. 107! 7 %5 50 100 150 200 23 6710123 57102 23 57109 2 CASE TEMPERATURE Tc (C) DRAIN-SOURCE VOLTAGE Vos (V) CUTPUT CHARACTERISTICS OUTPUT CHARACTERISTICS (TYPICAL) (TYPICAL) VGS = 20V 20 10V 10 Ves=20V 8V 10V 6V ~ av Z 6 <8 : 2 2 * ~ 5 12 5 6 Pp = 125W i ii fam ia 5 S 3 8 QO 4 zZ Zz < < c 5 4 S 2 Te = 25C Pulse Test % 10 20 30 40 50 % 4 8 12 16 20 DRAIN-SOURCE VOLTAGE vos (V) DRAIN-SOURCE VOLTAGE Vos (V) MITSUBISHI 2 - 263 ELECTRIC MITSUBISHI Nch POWER MOSFET FS10VS-10 HIGH-SPEED SWITCHING USE 2 264 DRAIN-SOURCE ON-STATE VOLTAGE Vpbs (oN) (V) DRAIN CURRENT Ip (A) CAPACITANCE Ciss, Coss, Crss (pF) ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) Tc=2 Pulse T. wu _ <o 2 = 2 og a co 3 2 ae 28 f c lw 5A at Q 6 4 g 12 16 20 GATE-SOURCE VOLTAGE Vas (V) TRANSFER CHARACTERISTICS (TYPICAL) C= 25C Bos = 50V ulse Test 1 ne 25 iW fc ay a 53 ee 0 0 4 8B 12 16 20 GATE-SOURCE VOLTAGE Vas (V) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 Ciss 103 7 5 2 3 2 = = 102 7 g 5 = 3 Ee 2 = 25C 7 C= 10 Lf = 1MHz 5 = OV 23 5710923 5710123 5710223 DRAIN-SOURCE VOLTAGE Vos (V) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) Te = 25C Pulse T 0 10-7 23 710 23 5710' 23 67102 DRAIN CURRENT Ib (A) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 10! Vos = 10V Pulse Test nm Ww os 10 7 5 3 2 1 ot 2 3 6 7100 23 6 7 10" DRAIN CURRENT 1p (A) SWITCHING CHARACTERISTICS (TYPICAL) Tch = 25C VoD = 200V VGS = 10V EN = RGS = 50Q 57109 2 3 5 7 10! 1077 23 DRAIN CURRENT 10 (A) 9 MITSUBISHI ELECTRIC DRAIN-SOURCE ON-STATE RESISTANCE rps (on) (tC) DRAIN-SOURCE ON-STATE RESISTANCE rps (on) (25C) DRAIN-SOURCE BREAKDOWN VOLTAGE Var (088) (tC) DRAIN-SOURCE BREAKDOWN VOLTAGE Ver (pss) (25C) GATE-SOURCE VOLTAGE vas (V) 20 16 12 101 7 5 Ro & 10 NH ows 10" 14 1.2 1.0 0.8 06 0 20 40 60 80 GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) Toh = 25C jo = 10A = 100V 100 GATE CHARGE Qg (nC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) Vas = 10V Ip = 1/2tp Pulse Test -50 0 50 100 150 CHANNEL TEMPERATURE Tech (C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VGs = OV ID= 1mA 150 -50 9 50 100 CHANNEL TEMPERATURE Tch (C} ate MITSUBISHI ELECTRIC FRANSIENT THERMAL IMPEDANCE 2th (ch0) C;C/W) SOURCE CURRENT Is (A) GATE-SOURCE THRESHOLD VOLTAGE V6s ith) (V) MITSUBISHI Nch POWER MOSFET FS10VS-10 HIGH-SPEED SWITCHING USE SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 40 V6s = OV Pulse Test 32 24 16 0 0 0.8 1.6 24 3.2 40 SOURCE-DRAIN VOLTAGE Vsp (V) THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE (TYPICAL) 5.0 VDS = 10V Ip=1mA 4.0 3.0 2.0 -50 0 50 700 169 CHANNEL TEMPERATURE Tch (C} TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 10-2 . 10423 5710323 5710223 5710723 57700 23 5710123 57102 PULSE WIDTH tw (s) 2~ 265