Quick start guide KIT_DRIVER_2EDN7524R August 2018 KIT_DRIVER_2EDN7524R 2018-08-16 Copyright (c) Infineon Technologies AG 2018. All rights reserved. 2 Included in this kit Evaluation kit KIT_DRIVER_2EDN7524R Heatsinks for TO-220 MOSFETs 2018-08-16 Copyright (c) Infineon Technologies AG 2018. All rights reserved. 3 Board schematic DRIVER INPUT CONNECTORS R G,SINK R G,SOURCE MOSFETS MOSFETS CONNECTORS 2EDN7524R DRIVER HEATSINKS n.d. = value not defined, component not populated on the PCB 2018-08-16 Copyright (c) Infineon Technologies AG 2018. All rights reserved. 4 Components to add - BOM suggestion Distance bolts Screws for distance bolts Screws and washers for MOSFET mounting to heatsink TO-220 sockets TO-220 MOSFETs Source resistors (R5, R6) Sink resistors (R21, R22) Sink diodes Component Quantity Designator Comment Voltage Footprint Type Part number/ supplies Sink diode 2 D5,D6 Schottky diode 30 V SOD-123 PMEG3020 Schottky diode 816-6858 RS-Components Resistors 4 R5,R6,R21,R22 RES805R SMD ceramic resistor TO-220 Receptacle Connector 0.034" ~ 0.041" (0.86 mm ~ 1.04 mm) TO-220 sockets 2018-08-16 2 T6,T7 TO-220 socket Copyright (c) Infineon Technologies AG 2018. All rights reserved. 5050865-5 Digi-key 5 Step 1: Distance bolts mounting 2018-08-16 Copyright (c) Infineon Technologies AG 2018. All rights reserved. 6 Step 2: Source resistors soldering 2018-08-16 Copyright (c) Infineon Technologies AG 2018. All rights reserved. 7 Step 3: Sink resistors and sink diodes soldering Add the sink resistors and the sink diodes only if a differentiation between the turn-on and the turn-off behavior is required 2018-08-16 Copyright (c) Infineon Technologies AG 2018. All rights reserved. 8 Step 4: TO-220 sockets soldering 2018-08-16 Copyright (c) Infineon Technologies AG 2018. All rights reserved. 9 Step 5: MOSFETs placement into the sockets 2018-08-16 Copyright (c) Infineon Technologies AG 2018. All rights reserved. 10 Step 6: Heatsink mounting (optional) Solder the heatsink if the board is used in high voltage scenarios In basic measurements it is not necessary See next slide for further information on how to properly mount the MOSFETs to the heatsink 2018-08-16 Copyright (c) Infineon Technologies AG 2018. All rights reserved. 11 TO-220 MOSFET mounting to the heatsink Recommendations for assembly of Infineon TO packages: https://www.infineon.com/dgdl/InfineonPackage_recommendations_for_assembly_of_Infineon_TO_packages-AN-v01_00EN.pdf?fileId=db3a30431936bc4b011938532f885a38 2018-08-16 Copyright (c) Infineon Technologies AG 2018. All rights reserved. 12 Step 7: BNC connectors soldering OUTB to GND INB to GND Vgs_MOSFET N.B. Please note that the silkscreen labels for INA and INB are merged 2018-08-16 Copyright (c) Infineon Technologies AG 2018. All rights reserved. 13 Instrumentation for driver supply generation Vcc=12 V for CoolMOSTM and 8 V for OptiMOSTM Set the current limit below 1 A (0.8 A e.g.) 2018-08-16 Copyright (c) Infineon Technologies AG 2018. All rights reserved. 14 Instrumentation for PWM signals generation Use a function generator or a microcontroller 2018-08-16 Copyright (c) Infineon Technologies AG 2018. All rights reserved. 15 Connections 2018-08-16 Copyright (c) Infineon Technologies AG 2018. All rights reserved. 16 Instrumentation for signals evaluation Voltage probes used: Tetronix TPP1000 1 GHz, 3.9 pF 2018-08-16 Copyright (c) Infineon Technologies AG 2018. All rights reserved. 17 Complete measurement setup 2018-08-16 Copyright (c) Infineon Technologies AG 2018. All rights reserved. 18 Oscilloscope waveforms Measurements done on a single MOSFET with = 0 (drain and source shorted) 2018-08-16 Copyright (c) Infineon Technologies AG 2018. All rights reserved. 19 Equivalent model of the driving circuit 2018-08-16 Copyright (c) Infineon Technologies AG 2018. All rights reserved. 20 Low-high propagation delay R G,SOURCE = 39 R G,SINK = 33 MOSFET = IPA60R099C7 R G,MOSFET = 0.82 CLOAD 2.8 nF defined in the datasheed as time interval t(OUTB = 10% VDD) - t(INB = VINH = 2.1 V) for a pure capacitive load CLOAD = 1.8 nF with R G,SOURCE = 0 N.B. In the considered measurements the load is the transistor with R G,MOSFET = 0.82 , R G,SOURCE = 39 , CLOAD 2.8 nF (see slide 23 for CLOAD calculation) 2018-08-16 Copyright (c) Infineon Technologies AG 2018. All rights reserved. 21 High-Low propagation delay R G,SOURCE = 39 R G,SINK = 33 MOSFET = IPA60R099C7 R G,MOSFET = 0.82 CLOAD 2.8 nF defined in the datasheed as time interval t(OUTB = 90% VDD) - t(INB = VINL = 1.02 V) for a pure capacitive load CLOAD = 1.8 nF with R G,SINK = 0 N.B. In the considered measurements the load is the transistor with R G,MOSFET = 0.82 , R G,SINK = 33 , CLOAD 2.8 nF 2018-08-16 Copyright (c) Infineon Technologies AG 2018. All rights reserved. 22 CLOAD calculation for IPA60R099C7 = - = 28 = = 2.8 = 10 2.8 = 12 2018-08-16 Copyright (c) Infineon Technologies AG 2018. All rights reserved. 23 Rise/fall times R G,SOURCE = 39 R G,SINK = 33 MOSFET = IPA60R099C7 R G,MOSFET = 0.82 CLOAD 2.8 nF 2018-08-16 Copyright (c) Infineon Technologies AG 2018. All rights reserved. 24 Gate resistors replacement R G,SOURCE = 39 R G,SINK = 33 24 20 MOSFET = IPA60R099C7 2018-08-16 Copyright (c) Infineon Technologies AG 2018. All rights reserved. 25 Rise/fall times: New set of gate resistances R G,SOURCE = 24 R G,SINK = 20 MOSFET = IPA60R099C7 R G,MOSFET = 0.82 CLOAD 2.8 nF 2018-08-16 Copyright (c) Infineon Technologies AG 2018. All rights reserved. 26 Gate resistors replacement R G,SOURCE = 24 R G,SINK = 20 51 43 MOSFET = IPA60R099C7 2018-08-16 Copyright (c) Infineon Technologies AG 2018. All rights reserved. 27 Rise/fall times: New set of gate resistances R G,SOURCE = 51 R G,SINK = 43 MOSFET = IPA60R099C7 R G,MOSFET = 0.82 CLOAD 2.8 nF 2018-08-16 Copyright (c) Infineon Technologies AG 2018. All rights reserved. 28 MOSFET Replacement IPA60R099C7 IPA60R280CFD7 2018-08-16 13 = 1.3 = 12 10 Copyright (c) Infineon Technologies AG 2018. All rights reserved. 29 Rise/fall times: New MOSFET R G,SOURCE = 51 R G,SINK = 43 MOSFET = IPA60R280CFD7 R G,MOSFET = 11 CLOAD 1.3 nF 2018-08-16 Copyright (c) Infineon Technologies AG 2018. All rights reserved. 30 MOSFET replacement IPA60R280CFD7 IPA60R180P7 2018-08-16 19 = 1.9 = 12 10 Copyright (c) Infineon Technologies AG 2018. All rights reserved. 31 Rise/fall times: New MOSFET R G,SOURCE = 51 R G,SINK = 43 MOSFET = IPA60R180P7 R G,MOSFET = 11 CLOAD 1.9 nF 2018-08-16 Copyright (c) Infineon Technologies AG 2018. All rights reserved. 32 Additional notes Note that the MOSFET is not turned-on or -off, you are only charging/discharging the gate-to-source capacitance Changing the gate resistors and the MOSFETs, you are changing the load for the driver If you want to turn-on or turn-off the MOSFET, you must integrate the board in a proper circuit You can not apply directly the voltage (e.g 400 V) across the MOSFET through the banana connectors on the board You must limit the input current from the DC source generator add an inductance You must create a freewheeling path for the current when MOSFET is off Example: boost converter, simple MOSFET in clamped inductive mode 2018-08-16 Copyright (c) Infineon Technologies AG 2018. All rights reserved. 33 IMPORTANT NOTICE and WARNINGS IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer's compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer's products and any use of the product of Infineon Technologies in customer's applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer's technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies' products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 2018-08-16 Copyright (c) Infineon Technologies AG 2018. All rights reserved. 34