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VTP Process Photodiodes VTP1188S
PRODUCT DESCRIPTION
Large area planar silicon photodiode mounted
on a two lead ceramic substrate. A clear molded
lens is used to increase s ensiti vity. Low junctio n
capaci tan ce perm i ts fas t r es ponse ti me.
PACKAGE DIMENSIONS inch (mm)
CASE 12 LENSED CERAMIC
CHIP ACTIVE AREA: .017 in
2
(1 .1 m m
2
)
ABSOLUTE MAXIMUM RATINGS
St orage Tem perat ure: -2 0°C to 75 °C
Oper ati ng Te mp er atur e: -2 0°C to 75 °C
ELECTRO-OP T ICA L CHA RACTERI STICS @ 25°C (See also VTP curves, page 46)
SYMBOL CHARACTERISTI C TEST CONDIT IONS VTP11188S UNITS
Min. Typ. Max.
ISC Short Circuit Current H = 100 fc, 28 50 K 200 µA
TC ISC ISC Temperature Coefficient 2850 K .20 %/° C
ISC Short Circuit Current 100 µW/cm2, 880 nm 13 25 µA
VOC Open Circuit Voltage H = 100 2850 K .33 mV
TC VOC VOC Temperature Coefficient 2850 K -2.0 m V/°C
IDDark Current H = 0, V R = 10 mV 3 30 nA
RSH Shunt Resistance H = 0, V = 10 mV 67 GΩ
TC RSH RSH Temperatur e Coefficient H = 0, V = 10 mV -11 %/°C
CJJunction Capacitance H = 0, V =0 V .18 .30 nF
λrange Spec tral Application Range 400 1100 nm
λpSpectral Respo nse - Peak 925 nm
SRSensitivity @ Peak .55 A/W
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
