Rugged Power MOSFETs IRF820R, IRF821R, IRF8&22R, IRF823R Avalanche Energy Rated N-Channel Power MOSFETs 2.0A and 2.5A, 450V-500V 'ps(On) = 3.00 and 4.00 Features: @ Single pulse avalanche energy rated @ SOA is power-dissipation limited Nanosecond switching speeds @ Linear transfer characteristics @ High input impedance The IRF820R, IRF821R, IRF822R and IRF823R are ad- File Number 2020 N-CHANNEL ENHANCEMENT MODE O 92C5-42658 TERMINAL DIAGRAM TERMINAL DESIGNATION SOURCE vanced power MOSFETs designed, tested, and guaranteed RAIN = to withstand a specified level of energy in the breakdown SS avalanche mode of operation. These are n-channel en- (FLANGE) Cc - Oo = s ora hancement-mode silicon-gate power field-effect transis- VY nn, tors designed for applications such as switching regulators, + ES switching converters, motor drivers, relay drivers, and driv- TOP VIEW GATE ers for high-power bipolar switching transistors requiring s2cs-39528 high and low gate-driv wer. These types can be ron aled directly tor Inourated, circuits. yp JEDEC TO-220AB The IRF-types are supplied in the JEDEC TO-220AB plastic package. Absolute Maximum Ratings Par t IRF820R IRF821R IRF822R 1RF823R Units Vos Drain - Source Voltage @ 500 450 500 450 Vv Voca Drain - Gate Voltage (Res = 20 KQ) @ 500 450 500 450 Vv lb @ Te = 25C Continuous Drain Current 2.5 2.5 2.0 2.0 A Ip @ Te = 100C Continuous Drain Current 1.5 15 1.0 1.0 A lom Pulsed Drain Current @ 10 10 8.0 8.0 A Ves Gate - Source Voltage +20 Vv Pp @ Te = 25C Max. Power Dissipation 40 (See Fig. 14) Ww Linear Derating Factor 0.32 (See Fig. 14) Ww/C Eas Single Pulse Avalanche Energy Rating 210 mj Tos Storage femperature Flange ~55 to 150 C Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) C 6-152Rugged Power MOSFETs Electrical Characteristics @ Tc = 25C (Unless Otherwise Specified) IRF820R, IRF821R, IRF822R, IRF823R Pi t Type Min. | Typ. | Max. | Units Test Conditions BVoss Drain - Source Breakdown Voltage hresee 500 _ _ v Vas = OV {RF821R = iRF823R 450 _- - v fo = 250uA Vasan Gate Threshold Voltage ALL 2.0 = 40 Vv Vos = Vas, lo = 2507 A lass Gate-Source Leakage Forward ALL _ _ 500 nA Ves = 20V lass Gate-Source Leakage Reverse ALL _ = -500 nA Ves = -20V loss Zero Gate Voltage Drain Current A _ = 250 BA Vos = Max. Rating, Vas = OV _- tL f= [= [t000 {wa _ | Vos = Max. Rating x 0.8, Vas = OV, Te = 125C Iniom = On-State Drain Current @ IRF820R} 55 _ _ A IRF621R Vos > lptom X Rostons max. Ves = 10V IRFB22R | 44 _ _ A IRF823R : Rosie Static Drain-Source On-State IRF820R;} 25 3.0 Q . Resistance @ IRF821R : " = = Ves = 10V, Ip = 1.0A IRF822R _ 3.0 40 IRF823R : |_ Gre Forward Transconductance @ ALL 1.0 1.75 = S(&) | Vog > Intem X Rostonmax, !p = 1.0A Ciss Input Capacitance ALL _ 300 = pF Ves = OV, Vos = 25V, f = 1.0 MHz Coss Output Capacitance ALL _ 75 = pF See Fig. 10 Crs Reverse Transfer Capacitance ALL _ 20 =_ pF tatont Turn-On Delay Time ALL _ 30 60 ns Vop = 0.5BVpss, Ip = 1.0A, Zo = 500 t Rise Time ALL _ 25 50 ns See Fig. 17 taton Turn-Off Delay Time ALL 30 60 ns (MOSFET switching times are essentially tt Fall Time ALL _ 15 30 ns independent of operating temperature.) Q, Total Gate Charge ALL _ "1 26 nc Ves = 10V, Ip = 3.0A, Vos = 0.8V Max. Rating. {Gate-Source Plus Gate-Drain) See Fig. 18 for test circuit. (Gate charge is Qus Gate-Source Charge ALL 5.0 nc essentially independent of operating oe RAT li temperature.) Qsa Gate-Drain (Miller) Charge ALL _ 6.0 _ nc Lo internal Drain inductance - 3.5 _ nH Measured from the Modified MOSFET contact screw on tab symbol showing the to center of die. internal device ALL 45 nH_ | Measured from the inductances. drain lead, 6mm (0.25 in.) from package to Lo center of die. J Ls internal Source Inductance ALL - 75 - nH Measured from the $ Ls source lead, 6mm (0.25 in.} from 5 package to source eres azeas bonding pad. Thermal Resistance RunJC Junction-to-Case ALL _ 3.12 | CAW RmCS Case-to-Sink ALL 1.0 C/W | Mounting surface flat, smooth, and greased. ReJA Junction-to-Ambient ALL _ _ 80 C/W | Free Air Operation Source-Drain Diode Ratings and Characteristics Is Continuous Source Current IRF820R | _ _ 25 A Modified MOSFET symbol (Body Diode) IRF821A | showing the integral o IRF822R A reverse P-N junction rectifier. IRFE23R| ~ | ~ | 29 Is Pulse Source Current IRF820R;} __ _ 10 A & (Body Diode) @ IRF821R IRF822R sace-azere IRFe23R | | 80 | A Vso Diode Forward Voltage @ (RF820R _ _ = = IRF821R ~ 1.6 v Te = 25C, Is = 2.5A, Vas = OV IRF822R = = = IRF823R - 1.5 Vv Tc = 26C, Is = 2.0A, Vas = OV te Reverse Recovery Time ALL _ 600 ns Ts = 150C, ip = 2.5A, dir/dt = 100A/gs Qra Reverse Recovered Charge ALL = 3.5 BC Ts = 150C, te = 2.5A, dir/dt = 100A/ps ton Forward Turn-on Time ALL intrinsic turn-on time is negligibie. Turn-on speed is substantially controlled by Ls + Lo. @ T, = 25C to 150C. @ Pulse Test: Pulse width < 300us, Duty Cycle < 2%. @ Repetitive Rating: Pulse width limited by max. junction temperature. See Transient Thermal Impedance Curve (Fig. 5). @ Voo = 5V, starting Ts = 25C, L = 6OMH, Ros = 2512, Ibeax = 2.5A. See figures 15, 16. 6-153Rugged Power MOSFETs IRF820R, IRF821R, IRF822R, IRF823R 6-154 ip. DRAIN CURRENT (AMPERES) Q 50 100 150 200 Vos, ORAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 1 Typical Output Characteristics 80 us PULSE TEST w n ip. DRAIN CURRENT (AMPERES) 0 4 8 2 16 Vos. DRAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 3 Typical Saturation Characteristics om n 2 Ss a SINGLE PULSE (TRANSIENT THERMAL IMPEDANCE} 2 2 8 Zinacit/Ryp jc. NORMALIZED EF FECTIVE TRANSIENT THEAMAL IMPEDANCE (PER UNIT) 2 Ss 2 5 wt 2 5 3 8 o 250 ig. DRAIN CURRENT (AMPERES) Ip, GRAIN CURRENT (AMPERES) 80 ys PULSE t ' i Vos > !oton} * Roston) max. Ty = 1259C I ' Ty = 2596 Ty = -559C a 2 4 6 a 10 Vgs. GATE TO SOURCE VOLTAGE (VOLTS) Fig. 2 ~ Typical Transfer Characteristics OPERATION IN THIS AREA IS LIMITED BY Roston} - . +tt Te = 25C protties Ty= 150C Max +-+ Puyo 3t-C Ww ft Ft SINGLE PULSE aR an vo 2 5 1 20 SO 100 200 S00 Vp. DRAIN TO-SOURCE VOLTAGE (VOLTS) Fig. 4 Maximum Safe Operating Area 2 1 QUTY FACTOR, 0 = z 2. PER UNIT BASE Ringe 7 3.12 DEG CW. 3. Ty - Te = Pom Zinscttt 2 5 10-1 2 5 1 2 5 10 ty, SQUARE WAVE PULSE DURATION (SECONDS) Effective T: Thermat | J ion-to-Case Vs. Pulse Durationdiz. TRANSCONDUCTANCE (SiEMANS) ( eee Vos > !Dton) * Aosten) max. 1 2 3 4 Ip, DRAIN CURRENT (AMPERES) Fig. 6 Typical Transconductance Vs. Drain Current BV oss. DRAIN-TO-SOUACE BREAKDOWN VOLTAGE IWORMALIZED) C, CAPACITANCE ipF} Fig. 10 Typical Capacitance Vs. Drain-to-Source Voltage 125 a 2 ry a 2 a o 40 80 120 Ty, JUNCTION TEMPERATURE (C} Fig. 8 Breakdown Voltage Vs. Temperature g 3 & 200 Ves=0 = 1 MHz Cis = Cop + qa, Coy SHORTED Cry * Gye fp Cos Cosa = Cag + tee ty = Cas + Cog Coss 10 20 0 40 Vps, ORAIN-TO-SOURCE VOLTAGE (VOLTS) 160 50 Rugged Power MOSFETs IRF820R, IRF821R, IRF822A, IRF823R 6 = ow ~ to L_Ty= 150C o Ty = 25C ipn. REVERSE DAAIN CURRENT (AMPERES) ~ 0 1 2 3 a Vgg. SOURCE-TO-DRAIN VOLTAGE (VQLTS} Fig. 7 Typical Source-Drain Diode Forward Voltage 26 22 Ais (on). ORAIN-TO-SOURCE ON RESISTANCE (NORMALIZEQ) > 06 02 -40 a 40 a0 120 160 Ty, JUNCTION TEMPERATURE (OC) Fig. 9 Normalized On-Resistance Vs. Temperature Vos !00v oso Vos 250g , Voa = 400V, IRF820A, 822R Vgg. GATE 10 SOURCE VOLTAGE (VOLTS) Ip=3A FOR TEST CIACUIT SEE FIGURE 18 8 4 a 12 16 20 Oy TOTAL GATE CHARGE tidy Fig. 11 ~ Typical Gate Charge Vs. Gate-to-Source Voltage 6-155Rugged Power MOSFETs IRF820R, IRF821R, IRF822R, IRF823R 9 T 30 Vgs = 10v IRF822A, 823R A. XY 06 3 La Sion} MEASURED WITH CURRENT PULSE OF 2bus DURATION. INITIAL Ty = 25C. (HEATING EFFECT OF 2.0 us PULSE IS MINIMAL) ~ Ip. DRAIN CURRENT (AMPERES) Rosion}. ORAIN-TO-SOURCE ON RESISTANCE (GHMS} 18 IRF62Z0R, 821R 2 a 0 2 4 8 10 12 4 25 50 8 100 125 150 Ip. ORAIN CURRENT (AMPERES) Tc, CASE TEMPERATURE (0C] Fig. 12 Typical On-Resistance Vs. Drain Current Fig. 13 Maximum Drain Current Vs. Case Temperature Vos VARY tp TO OBTAIN put REQUIRED PEAK I Veg 710 ! fro] Pp. POWER DISSIPATION (WATTS) 0 20 40 60 80 100 120 140 Tc, CASE TEMPERATURE (C) Fig. 14 Power Vs. Temperature Derating Curve ADJUST RL TO OBTAIN SPECIFIED Ip 92CS - 42659 Fig. 15 Unciamped Energy Test Circuit v PULSE 108 GENERATOR VoD TO SCOPE HIGH FREQUENCY ee SHUNT 92CS- 42660 = Fig. 16 Unclamped Energy Waveforms Fig. 17 Switching Time Test Circuit *Yos CURRENT (USOLATED REGULATOR SUPPLY) SAME TYPE 12v AS DUT BATTERY a + L 1p CURRENT = CURRENT SHUNT SHUNT Fig. 18 Gate Charge Test Circuit 6-156