TD62786AFNG TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62786AFNG 8CH HIGH-VOLTAGE SOURCE-CURRENT DRIVER The TD62786AFNG is eight Channel Non-Inverting Source current Transistor Array. All units feature integral clamp diodes for switching inductive loads. Applications include relay, hammer and lamp drivers. This devices are a product for the Pb free(Sn-Ag). FEATURES Package Type : SSOP18 pin (0.65 mm pitch) High Output Voltage : VCE (SUS) = 50 V (Min) Output Current (Single Output) : IOUT = -500 mA / ch (Max) Low Level Active Input Output Clamp Diodes Input Compatible with TTL, 5 V CMOS Weight: 0.09 g (Typ.) Single Supply Voltage PIN CONNECTION (TOP VIEW) SCHEMATICS (EACH DRIVER) TD62786AFNG Note: The input and output parasitic diodes cannot be used as clamp diodes. MAXIMUM RATING (Ta = 25C, VCC = 0 V) CHARACTERISTIC Supply Voltage SYMBOL RATING UNIT VCC-VGND 50 V VCE (SUS) -50 V Output Current IOUT -500 mA / ch Input Voltage VIN -30 ~ 0.5 V Clamp Diode Reverse Voltage VR 50 V Clamp Diode Forward Current IF 500 mA PD (Note) 0.96 W Output Sustaining Voltage Power Dissipation Operating Temperature Topr -40 ~ 85 C Storage Temperature Tstg -55 ~ 150 C Note: On Glass Epoxy PCB (50 x 50 x 1.6 mm Cu 40%) 1 2005-03-07 TD62786AFNG RECOMMENDED OPERATING CONDITIONS (Ta = -40~85C, VCC = 0 V) CHARACTERISTIC Supply Voltage Output Sustaining Voltage SYMBOL CONDITION MIN TYP. MAX UNIT VCC-VGND 50 V VCE (SUS) -50 V -350 Duty = 10% 0 -180 Duty = 50% 0 -38 DC 1 Circuit Output Current IOUT (Note) Tpw = 25 ms, Tj = 120C, Ta = 85C, 8 Circuits mA / ch Input Voltage VIN -30 0 V Clamp Diode Reverse Voltage VR 50 V Clamp Diode Forward Current IF 350 mA PD (Note) 0.4 W MIN TYP. MAX UNIT VOUT = VGND = -50 V Ta = 85C -100 A VIN = VIL MAX. IOUT = -100 mA -1.8 VIN = VIL MAX. IOUT = -350 mA -2.0 1000 -1.2 0 -30 -2.8 -0.4 mA Power Dissipation Note: On Class Epoxy PCB (50 x 50 x 1.6 mm Cu 40%) ELECTRICAL CHARACTERISTICS (Ta = 25C, VCC = 0 V) CHARACTERISTIC Output Leakage Current Output Saturation Voltage SYMBOL TEST CIR- CUIT ICEX 1 VCE (sat) DC Current transfer Ratio 2 TEST CONDITION VCC = 0 V, VCE = 3 V IOUT = -350 mA hFE 2 VIN 4 IIN (ON) 3 VCC = 5.5 V, VIN = 0.4 V Clamp Diode Reverse Current IR VR = VR MAX., Ta = 85C Clamp Diode Forward Voltage VF Turn-On Delay tON Turn-Off Delay tOFF Input Voltage "H" Level "L" Level Input Current 5 VOUT = -50 V, RL = 125 CL = 15 pF 2 V V 100 A 2.0 V 0.2 1.0 s 2005-03-07 TD62786AFNG TEST CIRCUIT 1. ICEX 4. VIN (ON), VIN (OFF) 5. tON, tOFF 2. VCE (sat), hFE 3. IIN (ON) Note 1: Pulse Width 50 s, Duty Cycle 10% Output Impedance 50 , tr 10 ns, tf 5 ns Note 2: CL includes probe and jig capacitance PRECAUTIONS for USING This IC does not integrate protection circuits such as overcurrent and overvoltage protectors. Thus, if excess current or voltage is applied to the IC, the IC may be damaged. Please design the IC so that excess current or voltage will not be applied to the IC. Utmost care is necessary in the design of the output line, VCC and GND line since IC may be destroyed due to short-circuit between outputs, air contamination fault, or fault by improper grounding. 3 2005-03-07 TD62786AFNG 4 2005-03-07 TD62786AFNG PACKAGE DIMENSIONS SSOP18-P-225-0.65 Unit: mm Weight: 0.09 g (Typ.) 5 2005-03-07 TD62786AFNG About solderability, following conditions were confirmed * Solderability (1) Use of Sn-63Pb solder Bath * solder bath temperature = 230C * dipping time = 5 seconds * the number of times = once * use of R-type flux (2) Use of Sn-3.0Ag-0.5Cu solder Bath * solder bath temperature = 245C * dipping time = 5 seconds * the number of times = once * use of R-type flux RESTRICTIONS ON PRODUCT USE 030619EBA * The information contained herein is subject to change without notice. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The products described in this document are subject to the foreign exchange and foreign trade laws. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 6 2005-03-07