TD62786AFNG
2005-03-07
1
TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
TD62786AFNG
8CH HIGH−VOLTAGE SOURCE−CURRENT DRIVER
The TD62786AFNG is eight Channel Non−Inverting Source
current Transistor Array. All units feature integral clamp diodes
for switching inductive loads. Applications include relay, hammer
and lamp drivers.
This devices are a product for the Pb free(Sn-Ag).
FEATURES
Package Type : SSOP18 pin (0.65 mm pitch)
High Output Voltage : VCE (SUS) = 50 V (Min)
Output Current (Single Output) : IOUT = −500 mA / ch (Max)
Low Level Active Input
Output Clamp Diodes
Input Compatible with TTL, 5 V CMOS
Single Supply Voltage
PIN CONNECTION (TOP VIEW) SCHEMATICS
(EACH DRIVER)
Note: The input and output parasitic diodes cannot
be used as clamp diodes.
MAXIMUM RATING (Ta = 25°C, VCC = 0 V)
CHARACTERISTIC SYMBOL RATING UNIT
Supply Voltage VCC−VGND 50 V
Output Sustaining Voltage VCE (SUS) −50 V
Output Current IOUT −500 mA / ch
Input Voltage VIN −30 ~ 0.5 V
Clamp Diode Reverse Voltage VR 50 V
Clamp Diode Forward Current IF 500 mA
Power Dissipation PD (Note) 0.96 W
Operating Temperature Topr −40 ~ 85 °C
Storage Temperature Tstg −55 ~ 150 °C
Note: On Glass Epoxy PCB (50 × 50 × 1.6 mm Cu 40%)
Weight: 0.09 g (Typ.)
TD62786AFNG
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2005-03-07
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RECOMMENDED OPERATING CONDITIONS (Ta = −40~85°C, VCC = 0 V)
CHARACTERISTIC SYMBOL CONDITION MIN TYP. MAX UNIT
Supply Voltage VCC−VGND ― ― 50 V
Output Sustaining Voltage VCE (SUS) ― ― −50 V
DC 1 Circuit ― ― −350
Duty = 10% 0 ― −180
Output Current IOUT (Note) Tpw = 25 ms,
Tj = 120°C,
Ta = 85°C,
8 Circuits Duty = 50% 0 ― −38
mA /
ch
Input Voltage VIN −30 ― 0 V
Clamp Diode Reverse Voltage VR ― ― 50 V
Clamp Diode Forward Current IF ― ― 350 mA
Power Dissipation PD (Note) ― ― 0.4 W
Note: On Class Epoxy PCB (50 × 50 × 1.6 mm Cu 40%)
ELECTRICAL CHARACTERISTICS (Ta = 25°C, VCC = 0 V)
CHARACTERISTIC SYMBOL
TEST
CIR−
CUIT
TEST CONDITION MIN TYP. MAX UNIT
Output Leakage Current ICEX 1 VOUT = VGND = −50 V
Ta = 85°C ― ― −100 µA
VIN = VIL MAX.
IOUT = −100 mA ― ― −1.8
Output Saturation Voltage VCE (sat) 2
VIN = VIL MAX.
IOUT = −350 mA ― ― −2.0
V
DC Current transfer Ratio hFE 2 VCC = 0 V, VCE = 3 V
IOUT = −350 mA 1000 ― ―
“H” Level −1.2 ― 0
Input Voltage
“L” Level
VIN 4
−30 ― −2.8
V
Input Current IIN (ON) 3 VCC = 5.5 V, VIN = 0.4 V ― ― −0.4 mA
Clamp Diode Reverse Current IR ― V
R = VR MAX., Ta = 85°C ― ― 100 µA
Clamp Diode Forward Voltage VF ― ― ― 2.0 V
Turn−On Delay tON ― 0.2 ―
Turn−Off Delay tOFF
5 VOUT = −50 V, RL = 125 Ω
CL = 15 pF ― 1.0 ―
µs
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2005-03-07
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TEST CIRCUIT
1. ICEX 2. VCE (sat), hFE 3. IIN (ON)
4. VIN (ON), VIN (OFF)
5. tON, tOFF
Note 1: Pulse Width 50 µs, Duty Cycle 10%
Output Impedance 50 Ω, tr ≤ 10 ns, tf ≤ 5 ns
Note 2: CL includes probe and jig capacitance
PRECAUTIONS for USING
This IC does not integrate protection circuits such as overcurrent and overvoltage protectors.
Thus, if excess current or voltage is applied to the IC, the IC may be damaged. Please design the IC so that
excess current or voltage will not be applied to the IC.
Utmost care is necessary in the design of the output line, VCC and GND line since IC may be destroyed due to
short−circuit between outputs, air contamination fault, or fault by improper grounding.
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2005-03-07
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TD62786AFNG
2005-03-07
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PACKAGE DIMENSIONS
SSOP18−P−225−0.65 Unit: mm
Weight: 0.09 g (Typ.)
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2005-03-07
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About solderability, following conditions were confirmed
• Solderability
(1) Use of Sn-63Pb solder Bath
· solder bath temperature
= 230°C
· dipping time
= 5 seconds
· the number of times = once
· use of R-type flux
(2) Use of Sn-3.0Ag-0.5Cu solder Bath
· solder bath temperature
= 245°C
· dipping time
= 5 seconds
· the number of times = once
· use of R-type flux
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
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030619EBA
RESTRICTIONS ON PRODUCT USE
