IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4250 Wesentliche Merkmale Features * Infrarot LED mit sehr hoher Ausgangsleistung * Hohe Bestromung bei hohen Temperaturen moglich * Kurze Schaltzeiten * High Power Infrared LED * High forward current allowed at high temperature * Short switching times Anwendungen Applications * Infrarotbeleuchtung fur Kameras * IR-Datenubertragung * Sensorik * Infrared Illumination for cameras * IR Data Transmission * Optical sensors Sicherheitshinweise Safety Advices Je nach Betriebsart emittieren diese Bauteile hochkonzentrierte, nicht sichtbare InfrarotStrahlung, die gefahrlich fur das menschliche Auge sein kann. Produkte, die diese Bauteile enthalten, mussen gema den Sicherheitsrichtlinien der IEC-Normen 60825-1 und 62471 behandelt werden. Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC 60825-1 and IEC 62471. Typ Type Bestellnummer Ordering Code Strahlstarkegruppierung1) (IF = 100 mA, tp = 20 ms) Radiant Intensity Grouping1) Ie (mW/sr) SFH 4250 Q65110A2465 10 (typ. 20) 1) gemessen bei einem Raumwinkel = 0.01 sr / measured at a solid angle of = 0.01 sr 2012-10-12 1 SFH 4250 Grenzwerte (TA = 25 C) Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top , Tstg - 40 + 100 C Sperrspannung Reverse voltage VR 5 V Vorwartsgleichstrom Forward current IF 100 mA Stostrom, tp 100 s, D = 0 Surge current IFSM 1 A Verlustleistung Power dissipation Ptot 180 mW Warmewiderstand Sperrschicht - Umgebung bei Montage auf FR4 Platine, Padgroe je 16 mm2 Thermal resistance junction - ambient mounted on PC-board (FR4), padsize 16 mm2 each Warmewiderstand Sperrschicht - Lotstelle bei Montage auf Metall-Block Thermal resistance junction - soldering point, mounted on metal block RthJA RthJS 300 140 K/W K/W Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Wellenlange der Strahlung Wavelength at peak emission IF = 100 mA peak 860 nm Schwerpunkts-Wellenlange der Strahlung Centroid wavelength IF = 100 mA centroid 850 nm Spektrale Bandbreite bei 50% von Imax Spectral bandwidth at 50% of Imax IF = 100 mA 30 nm Abstrahlwinkel Half angle 60 Grad deg. Aktive Chipflache Active chip area A 0.09 mm2 Kennwerte (TA = 25 C) Characteristics 2012-10-12 2 SFH 4250 Kennwerte (TA = 25 C) Characteristics (cont'd) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Abmessungen der aktiven Chipflache Dimension of the active chip area L B LW 0.3 0.3 mm Schaltzeiten, Ie von 10% auf 90% und von 90% auf 10%, bei IF = 100 mA, RL = 50 Switching times, e from 10% to 90% and from 90% to 10%, IF = 100 mA, RL = 50 tr , tf 12 ns Durchlassspannung Forward voltage IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 s 1.5 ( 1.8) 2.4 (< 3.0) V V Sperrstrom Reverse current IR not designed for A reverse operation Gesamtstrahlungsfluss Total radiant flux IF = 100 mA, tp = 20 ms e typ 60 mW Temperaturkoeffizient von Ie bzw. e, TCI IF = 100 mA Temperature coefficient of Ie or e, IF = 100 mA - 0.5 %/K Temperaturkoeffizient von VF, IF = 100 mA Temperature coefficient of VF, IF = 100 mA TCV - 0.7 mV/K Temperaturkoeffizient von , IF = 100 mA Temperature coefficient of , IF = 100 mA TC + 0.3 nm/K 2012-10-12 VF VF 3 SFH 4250 Strahlstarke Ie in Achsrichtung1) gemessen bei einem Raumwinkel = 0.01 sr Radiant Intensity Ie in Axial Direction at a solid angle of = 0.01 sr Bezeichnung Parameter Symbol Werte Values SFH 4250-R Einheit Unit SFH 4250-S Strahlstarke Radiant intensity IF = 100 mA, tp = 20 ms Ie min Ie max 10 20 16 32 mW/sr mW/sr Strahlstarke Radiant intensity IF = 1 A, tp = 25 s Ie typ 120 190 mW/sr 1) Nur eine Gruppe in einer Verpackungseinheit (Streuung kleiner 2:1) / Only one bin in one packing unit (variation lower 2:1) Abstrahlcharakteristik Radiation Characteristics Irel = f () 40 30 20 10 0 50 OHL01660 1.0 0.8 0.6 60 0.4 70 0.2 80 0 90 100 1.0 2012-10-12 0.8 0.6 0.4 0 20 40 60 80 4 100 120 SFH 4250 Ie = f (IF) Radiant Intensity Ie 100 mA Single pulse, tp = 25 s Relative Spectral Emission Irel = f () OHF04132 100 10 OHL01715 1 Max. Permissible Forward Current IF = f (TA), RthJA = 300 K/W OHL01716 120 mA Ie I rel % I F 100 I e (100 mA) 80 100 80 5 60 60 10-1 5 40 40 10-2 20 0 700 20 5 750 800 10-3 0 10 nm 950 850 0 5 10 1 5 10 2 mA 10 3 IF Forward Current IF = f (VF) Single pulse, tp = 100 s IF 10 A IF 1.2 A OHF05438 t tP D = TP 1.0 IF T D= 10 -1 5 0.8 10 -2 0.6 0.005 0.01 0.02 0.033 0.05 0.1 0.2 0.5 1 5 0.4 10 -3 5 0.2 10 -4 0 0.5 1 1.5 2 2.5 V 3 VF 0 -5 10 10-4 10-3 10-2 10-1 100 101 s 102 tp 2012-10-12 5 20 40 60 80 C 120 TA Permissible Pulse Handling Capability IF = f (), TA 25 C, duty cycle D = parameter OHL01713 0 0 SFH 4250 Mazeichnung Package Outlines Mae in mm (inch) / Dimensions in mm (inch). Gehause / Package Power TOPLED(R), klarer Verguss / Power TOPLED(R), clear resin Anschlussbelegung Pin configuration 1 = Kathode / cathode 2/3/4 = Anode / anode 2012-10-12 6 SFH 4250 Empfohlenes Lotpaddesign Recommended Solder Pad Design Reflow Loten Reflow Soldering Padgeometrie fur verbesserte Warmeableitung 3.3 (0.130) Paddesign for improved heat dissipation 3.3 (0.130) 2.3 (0.091) 11.1 (0.437) 1.5 (0.059) 1.1 (0.043) 3.7 (0.146) 0.8 (0.031) 0.7 (0.028) Cu Flache / <_ 16 mm 2 per pad Cu-area Lotstoplack Solder resist Empfohlenes Lotpaddesign Recommended Solder Pad Design OHFP3021 Wellenloten TTW TTW Soldering 2 (0.079) 6.1 (0.240) Bewegungsrichtung der Platine PCB-direction 1 (0.039) 2 (0.079) 2 (0.079) 3 (0.118) 6 (0.236) 2.8 (0.110) 2.8 (0.110) 0.5 (0.020) Cu Flache / > 16 mm 2 per pad Cu-area Padgeometrie fur verbesserte Warmeableitung Lotstoplack Solder resist Paddesign for improved heat dissipation 2012-10-12 7 OHPY3040 SFH 4250 Lotbedingungen Soldering Conditions Reflow Lotprofil fur bleifreies Loten Reflow Soldering Profile for lead free soldering Vorbehandlung nach JEDEC Level 2 Preconditioning acc. to JEDEC Level 2 (nach J-STD-020-D0.1) (acc. to J-STD-020-D.01) OHA04525 300 C T 250 Tp 245 C 240 C tP 217 C 200 tL 150 tS 100 50 25 C 0 0 50 100 150 200 s 300 250 t Profileigenschaften Profile Feature Bleifreier Aufbau / Pb-Free Assembly (SnAgCu) Aufheizrate zum Vorwarmen* / Ramp-up rate to preheat*) ) Zeit ts von TSmin bis TSmax / Time ts from TSmin to TSmax Empfehlung / Recommendation Grenzwerte / Max. Ratings 2K/s 3K/s 100 s min. 60 s max. 120 s 2K/s 3K/s 25 C to 150 C 150 C to 200 C Aufheizrate zur Spitzentemperatur*) / Ramp-up rate to peak*) 180 C to TP Liquidustemperatur TL / Liquidus temperature TL 217 C Zeit tL uber TL / Time tL above TL 80 s max. 100 s Spitzentemperatur TP / Peak temperature TP 245 C max. 260 C Verweilzeit tP innerhalb des spezifizierten Spitzentemperaturbereichs TP - 5 K / Time tP within the specified peak temperature range TP - 5 K 20 s min. 10 s max. 30 s Abkuhlrate*) / Ramp-down rate*) 3K/s 6 K / s maximum TP to 100 C Zeitspanne von 25 C bis zur Spitzentemperatur / Time from 25 C to peak temperature max. 8 min. Alle Temperaturen beziehen sich auf die Bauteilmitte, jeweils auf der Bauteiloberseite gemessen / All temperatures refer to the center of the package, measured on the top of the package * Steigungsberechnung T/t: t max. 5 s; erfullt uber den gesamten Temperaturbereich / slope calculation T/t: t max. 5 s; fulfillment for the whole T-range 2012-10-12 8 SFH 4250 Wellenloten (TTW) TTW Soldering (nach CECC 00802) (acc. to CECC 00802) OHLY0598 300 C T 10 s 250 Normalkurve standard curve 235 C ... 260 C Grenzkurven limit curves 2. Welle 2. wave 200 1. Welle 1. wave 150 ca 200 K/s 2 K/s 5 K/s 100 C ... 130 C 100 2 K/s 50 Zwangskuhlung forced cooling 0 0 50 100 150 200 s 250 t Published by OSRAM Opto Semiconductors GmbH Leibnizstrae 4, D-93055 Regensburg www.osram-os.com (c) All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2012-10-12 9