SOT223 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 MARCH 96
FEATURES
*60 Volt V
DS
*R
DS(on)=5Ω
PARTMARKING DETAIL: - ZVP2106
COMPLEMENTARY TYPE: - ZVN2106G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS -60 V
Continuous Drain Current at Tamb
=25°C ID-450 mA
Pulsed Drain Current IDM -4 A
Gate Source Voltage VGS ± 20 V
Power Dissipation at Tamb
=25°C Ptot 2W
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BVDSS -60 V ID=-1mA, VGS=0V
Gate-Source Threshold
Voltage
VGS(th) -1.5 -3.5 V ID=-1mA, VDS= VGS
Gate-Body Leakage IGSS 20 nA VGS
=± 20V, VDS=0V
Zero Gate Voltage Drain
Current
IDSS -0.5
-100 µA
µA
VDS
=-60 V, VGS
=0
VDS
=-48 V, VGS
=0V, T=125°C(2)
On-State Drain Current(1) ID(on) -1 A VDS
=-18 V, VGS
=-10V
Static Drain-Source On-State
Resistance (1)
RDS(on) 5ΩVGS
=-10V,ID=-500mA
Forward Transconductance
(1)(2)
gfs 150 mS VDS
=-18V,ID=-500mA
Input Capacitance (2) Ciss 100 pF
Common Source Output
Capacitance (2)
Coss 60 pF VDS
=-18V, VGS=0V, f=1MHz
Reverse Transfer
Capacitance (2)
Crss 20 pF
Turn-On Delay Time (2)(3) td(on) 7ns
VDD
≈-18V, ID=-500mA
Rise Time (2)(3) tr15 ns
Turn-Off Delay Time (2)(3) td(off) 12 ns
Fall Time (2)(3) tf15 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
ZVP2106G
3 - 426
TYPICAL CHA RACTERISTICS
Output Characteristics
VDS - Drain Source Voltage (Volts)
I
D(On)
-On-State Drain Current (Amps)
Transfer Characteristics
Normalised R
DS(on)
and V
GS(th)
vs Temperature
Normalised R
DS(on)
and V
GS(th)
-40 -20 0 20 40 60 80 120
100 140 160
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Drain-Source Resistance R
DS(on)
Gate Threshold Voltage V
GS(th)
I
D=-
0.5A
0-2-4-6-8-100 -10 -20 -30 -40 -50
Saturation Characteristics
VDS-Drain Source Voltage (Volts)
Voltage Sa tura ti on Charac te ris tics
VGS-Gate Source Voltage (Volts)
-10V
I
D(On)-
On-State Drain Current (Amps)
VGS-Gate Source Voltage (Volts)
V
GS=
-10V
I
D=
-1mA
V
GS=
V
DS
-3.5
-3.0
-2.0
-0.5
0
-1.0
-2.5
-1.5
2.6
180
V
GS=
-20V-14V
-5V
-6V
-7V
-4V
-3.5V
-8V
V
GS
=
-18V
I
D(On)
-On-State Drain Current (Amps)
VDS - Drain Source Voltage (Volts)
On-resistance v drain current
I
D
-Drain Current (Amps)
RDS(ON) -Drain Source Resistance (Ω)
-0.1 -1.0
10
5
-2.0
-12V
-6V
-4V
0 -2 -4 -6 -8 -10
1
-10V -9V -8V -7V
-5V
-9V
0
-0.6
-0.4
-0.2
-0.8
-1.6
-1.4
-1.2
-1.0
-1.8
-2.0
0
-10
-6
-2
-4
-8
0-2 -4 -6 -8 -10
I
D=
-1A
-0.5A
-0.25A
-0.8
-0.6
-0.2
-0.4
V
DS=
-10V
-1.6
-1.4
-1.0
-1.2
-6V -7V
V
GS
=-5V -8V -10V -9V
T
j
-Junction Temperature (°C)
ZVP2106G
3 - 427
D
D
S
G
SOT223 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 MARCH 96
FEATURES
*60 Volt V
DS
*R
DS(on)=5Ω
PARTMARKING DETAIL: - ZVP2106
COMPLEMENTARY TYPE: - ZVN2106G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS -60 V
Continuous Drain Current at Tamb
=25°C ID-450 mA
Pulsed Drain Current IDM -4 A
Gate Source Voltage VGS ± 20 V
Power Dissipation at Tamb
=25°C Ptot 2W
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BVDSS -60 V ID=-1mA, VGS=0V
Gate-Source Threshold
Voltage
VGS(th) -1.5 -3.5 V ID=-1mA, VDS= VGS
Gate-Body Leakage IGSS 20 nA VGS
=± 20V, VDS=0V
Zero Gate Voltage Drain
Current
IDSS -0.5
-100 µA
µA
VDS
=-60 V, VGS
=0
VDS
=-48 V, VGS
=0V, T=125°C(2)
On-State Drain Current(1) ID(on) -1 A VDS
=-18 V, VGS
=-10V
Static Drain-Source On-State
Resistance (1)
RDS(on) 5ΩVGS
=-10V,ID=-500mA
Forward Transconductance
(1)(2)
gfs 150 mS VDS
=-18V,ID=-500mA
Input Capacitance (2) Ciss 100 pF
Common Source Output
Capacitance (2)
Coss 60 pF VDS
=-18V, VGS=0V, f=1MHz
Reverse Transfer
Capacitance (2)
Crss 20 pF
Turn-On Delay Time (2)(3) td(on) 7ns
VDD
≈-18V, ID=-500mA
Rise Time (2)(3) tr15 ns
Turn-Off Delay Time (2)(3) td(off) 12 ns
Fall Time (2)(3) tf15 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
ZVP2106G
3 - 426
TYPICAL CHA RACTERISTICS
Output Characteristics
VDS - Drain Source Voltage (Volts)
I
D(On)
-On-State Drain Current (Amps)
Transfer Characteristics
Normalised R
DS(on)
and V
GS(th)
vs Temperature
Normalised R
DS(on)
and V
GS(th)
-40 -20 0 20 40 60 80 120
100 140 160
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Drain-Source Resistance R
DS(on)
Gate Threshold Voltage V
GS(th)
I
D=-
0.5A
0-2-4-6-8-100 -10 -20 -30 -40 -50
Saturation Characteristics
VDS-Drain Source Voltage (Volts)
Voltage Sa tura ti on Charac te ris tics
VGS-Gate Source Voltage (Volts)
-10V
I
D(On)-
On-State Drain Current (Amps)
VGS-Gate Source Voltage (Volts)
V
GS=
-10V
I
D=
-1mA
V
GS=
V
DS
-3.5
-3.0
-2.0
-0.5
0
-1.0
-2.5
-1.5
2.6
180
V
GS=
-20V-14V
-5V
-6V
-7V
-4V
-3.5V
-8V
V
GS
=
-18V
I
D(On)
-On-State Drain Current (Amps)
VDS - Drain Source Voltage (Volts)
On-resistance v drain current
I
D
-Drain Current (Amps)
RDS(ON) -Drain Source Resistance (Ω)
-0.1 -1.0
10
5
-2.0
-12V
-6V
-4V
0 -2 -4 -6 -8 -10
1
-10V -9V -8V -7V
-5V
-9V
0
-0.6
-0.4
-0.2
-0.8
-1.6
-1.4
-1.2
-1.0
-1.8
-2.0
0
-10
-6
-2
-4
-8
0-2 -4 -6 -8 -10
I
D=
-1A
-0.5A
-0.25A
-0.8
-0.6
-0.2
-0.4
V
DS=
-10V
-1.6
-1.4
-1.0
-1.2
-6V -7V
V
GS
=-5V -8V -10V -9V
T
j
-Junction Temperature (°C)
ZVP2106G
3 - 427
D
D
S
G
TYP I CAL CH ARACTE RI S TI C S
T ransconductance v drain current
I
D
- Drain Current (Amps)
g
fs
-Transconductance (mS)
0
Q-Charge (nC)
Transconductance v ga te -source vol ta ge
V
GS
-Gate Source Voltage (Volts)
g
fs
-Transconductance (mS)
0-10-20-30
V
DS
-Drain Source Voltage (V olts)
Capacitance v drain-source voltage
C-Capacitance (pF)
C
oss
V
GS
-Gate Source Voltage (Volts)
Gate charge v gate-source voltage
-6
-8
-10
-14
-16
-12
-4
-2
0
V
DS
=
-20V -30V -50V
-40 -50 0.2 0.4 0.6 0.8 1.0 1.2
40
20
0
60 C
iss
C
rss
80
100
1.4 1.6 1.8 2.0 2.2 2.4
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0
0
V
DS=
-10V
200
150
100
50
250
300
0-2-4-6-8-10
0
V
DS=
-10V
200
150
100
50
250
300
ZVP2106G
3 - 428
