VS-STPS20L15DPbF, VS-STPS20L15D-N3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 20 A FEATURES Base cathode 1 Cathode TO-220AC * * * * * 3 Anode * * * * PRODUCT SUMMARY Package TO-220AC IF(AV) 20 A VR 15 V VF at IF See Electrical table IRM max. 600 mA at 100 C TJ max. 125 C Diode variation Single die EAS 10 mJ 125 C TJ operation (VR < 5 V) Optimized for OR-ing applications Ultra low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Compliant to RoHS Directive 2002/95/EC Designed and qualified according to JEDEC-JESD47 Halogen-free according to IEC 61249-2-21 definition (-N3 only) DESCRIPTION The Schottky rectifier module has been optimized for ultra low forward voltage drop specifically for the OR-ing of parallel power supplies. The proprietary barrier technology allows for reliable operation up to 125 C junction temperature. Typical applications are in parallel switching power supplies, converters, reverse battery protection, and redundant power subsystems. MAJOR RATINGS AND CHARACTERISTICS VALUES UNITS Rectangular waveform CHARACTERISTICS 20 A 15 V IFSM tp = 5 s sine 700 A VF 19 Apk, TJ = 125 C (typical) TJ Range SYMBOL IF(AV) VRRM 0.25 V - 55 to 125 C VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VR Maximum working peak reverse voltage VRWM VS-STPS20L15DPbF VS-STPS20L15D-N3 UNITS 15 15 V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 50 % duty cycle, TC = 85 C, rectangular waveform 20 A 5 s sine or 3 s rect. pulse 700 Maximum average forward current See fig. 5 IF(AV) Maximum peak one cycle non-repetitive surge current See fig. 7 IFSM Non-repetitive avalanche energy EAS TJ = 25 C, IAS = 2 A, L = 6 mH 10 mJ Repetitive avalanche current IAR Current decaying linearly to zero in 1 s Frequency limited by TJ maximum VA = 1.5 x VR typical 2 A Revision: 30-Aug-11 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied A 330 Document Number: 94325 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-STPS20L15DPbF, VS-STPS20L15D-N3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS SYMBOL PARAMETER TEST CONDITIONS 19 A Forward voltage drop See fig. 1 VFM (1) TJ = 25 C 40 A 19 A TJ = 125 C 40 A Reverse leakage current See fig. 2 IRM (1) Threshold voltage VF(TO) TJ = 25 C VR = Rated VR TJ = 100 C TYP. MAX. - 0.41 - 0.52 0.25 0.33 0.37 0.50 - 10 - 600 TJ = TJ maximum UNITS V mA 0.182 V 7.6 m Forward slope resistance rt Maximum junction capacitance CT VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 C - 2000 pF Typical series inductance LS Measured lead to lead 5 mm from package body 8 - nH Maximum voltage rate of change dV/dt Rated VR 10 000 V/s Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS SYMBOL PARAMETER TEST CONDITIONS VALUES Maximum junction temperature range TJ - 55 to 125 Maximum storage temperature range TStg - 55 to 150 Maximum thermal resistance, junction to case RthJC DC operation See fig. 4 1.5 Typical thermal resistance, case to heatsink RthCS Mounting surface, smooth and greased (for TO-220) 0.50 Maximum thermal resistance, junction to ambient RthJA DC operation (for D2PAK) Approximate weight Mounting torque Marking device Revision: 30-Aug-11 minimum maximum Non-lubricated threads Case style TO-220AC UNITS C C/W 40 2 g 0.07 oz. 6 (5) kgf * cm 12 (10) (lbf * in) STPS20L15D Document Number: 94325 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-STPS20L15DPbF, VS-STPS20L15D-N3 Vishay Semiconductors 1000 1000 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) www.vishay.com 100 TJ = 125 C TJ = 75 C TJ = 25 C 10 1 TJ = 100 C 100 TJ = 75 C 10 TJ = 50 C TJ = 25 C 1 0.1 0 0.2 0.4 0.6 0.8 1.2 1.0 1.4 3 0 1.6 6 9 12 15 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 10 000 TJ = 25 C 1000 100 0 5 15 10 20 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 PDM D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.1 t1 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC Single pulse (thermal resistance) 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 30-Aug-11 Document Number: 94325 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-STPS20L15DPbF, VS-STPS20L15D-N3 Vishay Semiconductors 100 14 95 12 90 Average Power Loss (W) Allowable Case Temperature (C) www.vishay.com Square wave (D = 0.50) 85 80 75 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 10 8 RMS limit 6 4 DC 2 See note (1) 70 0 0 4 8 12 20 16 24 0 5 10 15 20 25 30 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) 1000 At any rated load condition and with rated VRRM applied following surge 100 10 100 10 000 1000 tp - Square Wave Pulse Duration (s) Fig. 7 - Maximum Non-Repetitive Surge Current L D.U.T. IRFP460 Rg = 25 Current monitor High-speed switch Freewheel diode + Vd = 25 V 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Revision: 30-Aug-11 Document Number: 94325 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-STPS20L15DPbF, VS-STPS20L15D-N3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- STPS 1 2 20 L 15 D PbF 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Schottky STPS series 3 - Current rating (20 = 20 A) 4 - L = Low voltage drop 5 - Voltage rating (15 = 15 V) 6 - D = Essential part number 7 - Environmental digit PbF = Lead (Pb)-free and RoHS compliant -N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY VS-STPS20L15DPbF 50 1000 PACKAGING DESCRIPTION Antistatic plastic tube VS-STPS20L15D-N3 50 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions Part marking information SPICE model Revision: 30-Aug-11 www.vishay.com/doc?95221 TO-220AC PbF www.vishay.com/doc?95224 TO-220AC -N3 www.vishay.com/doc?95068 www.vishay.com/doc?95305 Document Number: 94325 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-220AC DIMENSIONS in millimeters and inches (6) B Seating plane A E A OP 0.014 M B A M E2 (7) Q 3 D D L1 E A1 C Thermal pad C H1 D2 Detail B (6) 2 x b2 2xb Detail B D1 1 2 A (6) H1 (7) (6) D 1 2 3 Lead tip L3 C E1 (6) Lead assignments Diodes 1 + 2 - Cathode 3 - Anode L4 L c e1 A Conforms to JEDEC outline TO-220AC View A - A A2 0.015 M B A M SYMBOL MILLIMETERS INCHES NOTES SYMBOL MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 E1 A1 1.14 1.40 0.045 0.055 A2 2.56 2.92 0.101 0.115 b 0.69 1.01 0.027 0.040 b1 0.38 0.97 0.015 0.038 b2 1.20 1.73 0.047 0.068 b3 1.14 1.73 0.045 0.068 MILLIMETERS INCHES MAX. MIN. MAX. 6.86 8.89 0.270 0.350 6 E2 - 0.76 - 0.030 7 e 2.41 2.67 0.095 0.105 e1 4.88 5.28 0.192 0.208 4 H1 6.09 6.48 0.240 0.255 L 13.52 14.02 0.532 0.552 4 L1 3.32 3.82 0.131 0.150 c 0.36 0.61 0.014 0.024 L3 1.78 2.13 0.070 0.084 c1 0.36 0.56 0.014 0.022 4 L4 0.76 1.27 0.030 0.050 D 14.85 15.25 0.585 0.600 3 OP 3.54 3.73 0.139 0.147 Q 2.60 3.00 0.102 0.118 D1 8.38 9.02 0.330 0.355 D2 11.68 12.88 0.460 0.507 6 E 10.11 10.51 0.398 0.414 3, 6 NOTES MIN. 90 to 93 6, 7 2 2 90 to 93 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimension: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 (7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed (8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline Document Number: 95221 Revision: 07-Mar-11 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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