2N7000
Vishay Semiconductors
for merly General Semiconductor
www.vishay.com Document Number 88119
216-Jul-02
Electrical Characteristics(TJ= 25°C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
Drain-Source Breakdown Voltage V(BR)DSS ID= 100µA, VGS = 0 60 90 —V
Gate-Body Leakage Current IGSS VGS ± 20V, VDS = 0V ——±10 nA
Drain Cutoff Current IDSS VDS = 48V, VGS = 0V —— 1µA
Gate-Source Threshold Voltage VGS(th) VGS = VDS, ID= 1.0mA 0.8 1.5 3 V
Drain-Source On-State Resistance RDS(on) VGS = 10V, ID= 500mA —3.5 5.0 Ω
Input Capacitance Ciss VDS = 25V, VGS = 0, —60 —pF
f = 1MHz
Output Capacitance Coss VDS = 25V, VGS = 0, —25 —pF
f = 1MHz
Feedback Capacitance Crss VDS = 25V, VGS = 0, —5—pF
f = 1MHz
Turn-On Time ton VGS = 10V, VDS = 10V —10 —ns
Turn-Off Time toff RD= 100Ω — 10 — ns
Source-Drain Diode
Parameter Symbol Test Condition Value Unit
Max. Forward Current (continuous) IFTamb = 25 °C 500 mA
Diode Forward Voltage (typ.) VSD VGS = 0, IF= 0.5A 850 mV
Tj= 25°C