2N7000 Vishay Semiconductors formerly General Semiconductor DMOS Transistor (N-Channel) TO-226AA (TO-92) 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) Features * * * * * * * * max. 0.022 (0.55) High input impedance Low gate threshold voltage Low drain-source ON-resistance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown Mechanical Data 0.098 (2.5) Dimensions in inches and (millimeters) Case: TO-92 Plastic Package Weight: approx. 0.18g Packaging Codes/Options: E7/4K per Ammo tape, 20K/box Bottom View Maximum Ratings and Thermal Characteristics Parameter (TA = 25C unless otherwise noted) Symbol Limit Unit Drain-Source Voltage VDSS 60 V Drain-Gate Voltage VDGS 60 V Gate-Source-Voltage VGS 20 V ID 300 mA IDM 1.3 A Drain Current (continuous) Peak Drain Current (pulsed) Power Dissipation at Tamb = 25C Thermal Resistance Junction to Ambient Air Ptot RJA (1) mW (1) C/W 830 150 Junction Temperature Tj 150 C Storage Temperature Range TS -65 to +150 C Note: (1) Valid provided that leads are kept at ambient temperature at a distance of 2mm from case. Document Number 88119 16-Jul-02 www.vishay.com 1 2N7000 Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (T = 25C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit Drain-Source Breakdown Voltage V(BR)DSS ID = 100A, VGS = 0 60 90 -- V Gate-Body Leakage Current IGSS VGS 20V, VDS = 0V -- -- 10 nA Drain Cutoff Current IDSS VDS = 48V, VGS = 0V -- -- 1 A Gate-Source Threshold Voltage VGS(th) VGS = VDS, ID = 1.0mA 0.8 1.5 3 V Drain-Source On-State Resistance RDS(on) VGS = 10V, ID = 500mA -- 3.5 5.0 Input Capacitance Ciss VDS = 25V, VGS = 0, f = 1MHz -- 60 -- pF Output Capacitance Coss VDS = 25V, VGS = 0, f = 1MHz -- 25 -- pF Feedback Capacitance Crss VDS = 25V, VGS = 0, f = 1MHz -- 5 -- pF -- 10 -- ns 10 -- ns J Turn-On Time ton Turn-Off Time toff VGS = 10V, VDS = 10V RD = 100 Symbol Test Condition Value Unit IF Tamb = 25 C 500 mA VSD VGS = 0, IF = 0.5A Tj = 25C 850 mV -- Source-Drain Diode Parameter Max. Forward Current (continuous) Diode Forward Voltage (typ.) www.vishay.com 2 Document Number 88119 16-Jul-02 2N7000 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Document Number 88119 16-Jul-02 www.vishay.com 3 2N7000 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25C unless otherwise noted) www.vishay.com 4 Document Number 88119 16-Jul-02 2N7000 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Document Number 88119 16-Jul-02 www.vishay.com 5