2N7000
Vishay Semiconductors
for merly General Semiconductor
Document Number 88119 www.vishay.com
16-Jul-02 1
DMOS T ransistor (N-Channel)
Maximum Ratings and Thermal Characteristics (TA= 25°C unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage VDSS 60 V
Drain-Gate Voltage VDGS 60 V
Gate-Source-Voltage VGS ±20 V
Drain Current (continuous) ID300 mA
Peak Drain Current (pulsed) IDM 1.3 A
Power Dissipation at Tamb = 25°C Ptot 830(1) mW
Thermal Resistance Junction to Ambient Air RθJA 150(1) °C/W
Junction Temperature Tj150 °C
Storage Temperature Range TS– 65 to +150 °C
Note:
(1) Valid provided that leads are kept at ambient temperature at a distance of 2mm from case.
Features
• High input impedance
• Low gate threshold voltage
• Low drain-source ON-resistance
• High-speed switching
• No minority carr ier storage time
• CMOS logic compatible input
• No thermal r unaway
• No secondar y breakdown
Mechanical Data
Case: TO-92 Plastic Package
Weight: approx. 0.18g
Packaging Codes/Options:
E7/4K per Ammo tape, 20K/box
TO-226AA (TO-92)
0.181 (4.6)
min. 0.492 (12.5) 0.181 (4.6)
0.142 (3.6)
0.098 (2.5)
max. ∅
0.022 (0.55)
Bottom
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Dimensions in inches
and (millimeters)
2N7000
Vishay Semiconductors
for merly General Semiconductor
www.vishay.com Document Number 88119
216-Jul-02
Electrical Characteristics(TJ= 25°C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
Drain-Source Breakdown Voltage V(BR)DSS ID= 100µA, VGS = 0 60 90 —V
Gate-Body Leakage Current IGSS VGS ± 20V, VDS = 0V ——±10 nA
Drain Cutoff Current IDSS VDS = 48V, VGS = 0V —— 1µA
Gate-Source Threshold Voltage VGS(th) VGS = VDS, ID= 1.0mA 0.8 1.5 3 V
Drain-Source On-State Resistance RDS(on) VGS = 10V, ID= 500mA —3.5 5.0 Ω
Input Capacitance Ciss VDS = 25V, VGS = 0, —60 —pF
f = 1MHz
Output Capacitance Coss VDS = 25V, VGS = 0, —25 —pF
f = 1MHz
Feedback Capacitance Crss VDS = 25V, VGS = 0, —5—pF
f = 1MHz
Turn-On Time ton VGS = 10V, VDS = 10V —10 —ns
Turn-Off Time toff RD= 100Ω — 10 — ns
Source-Drain Diode
Parameter Symbol Test Condition Value Unit
Max. Forward Current (continuous) IFTamb = 25 °C 500 mA
Diode Forward Voltage (typ.) VSD VGS = 0, IF= 0.5A 850 mV
Tj= 25°C
2N7000
Vishay Semiconductors
for merly General Semiconductor
Document Number 88119 www.vishay.com
16-Jul-02 3
Ratings and
Characteristic Curves(TA= 25°C unless otherwise noted)
2N7000
Vishay Semiconductors
for merly General Semiconductor
www.vishay.com Document Number 88119
416-Jul-02
Ratings and
Characteristic Curves(TA= 25°C unless otherwise noted)
2N7000
Vishay Semiconductors
for merly General Semiconductor
Document Number 88119 www.vishay.com
16-Jul-02 5
Ratings and
Characteristic Curves(TA= 25°C unless otherwise noted)
Ω
