© 2012 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C - 500 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ- 500 V
VGSS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C - 10 A
IDM TC= 25°C, Pulse Width Limited by TJM - 30 A
IATC= 25°C - 10 A
EAS TC= 25°C 1.5 J
dv/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns
PDTC= 25°C 300 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
MdMounting Torque (TO-3P,TO-220 & TO-247) 1.13/10 Nm/lb.in.
Weight TO-263 2.5 g
TO-220 3.0 g
TO-3P 5.5 g
TO-247 6.0 g
DS99911C(12/12)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = - 250μA - 500 V
VGS(th) VDS = VGS, ID = - 250μA - 2.0 - 4.0 V
IGSS VGS = ±20V, VDS = 0V ±100 nA
IDSS VDS = VDSS, VGS = 0V - 10 μA
TJ = 125°C - 250 μA
RDS(on) VGS = -10V, ID = 0.5 • ID25, Note 1 1 Ω
PolarPTM
Power MOSFETs
P-Channel Enhancement Mode
Avalanche Rated
IXTA10P50P
IXTP10P50P
IXTQ10P50P
IXTH10P50P
VDSS = - 500V
ID25 = - 10A
RDS(on) ≤≤
≤≤
≤ 1ΩΩ
ΩΩ
Ω
TO-263 AA (IXTA)
G
S
D (Tab)
G = Gate D = Drain
S = Source Tab = Drain
TO-247 (IXTH)
G
S
DD (Tab)
TO-3P (IXTQ)
D
G
SD (Tab)
TO-220AB (IXTP)
D (Tab)
S
D
G
Features
zInternational Standard Packages
zAvalanche Rated
zRugged PolarPTM Process
zLow Package Inductance
zFast Intrinsic Diode
Advantages
zEasy to Mount
zSpace Savings
zHigh Power Density
Applications
zHigh-Side Switches
zPush Pull Amplifiers
zDC Choppers
zAutomatic Test Equipment
zCurrent Regulators
IXTA10P50P IXTQ10P50P
IXTP10P50P IXTH10P50P
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = -10V, ID = 0.5 • ID25, Note 1 6.5 11 S
Ciss 2840 pF
Coss VGS = 0V, VDS = - 25V, f = 1MHz 275 pF
Crss 42 pF
td(on) 20 ns
tr 28 ns
td(off) 52 ns
tf 44 ns
Qg(on) 50 nC
Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 17 nC
Qgd 18 nC
RthJC 0.42 °C/W
RthCS (TO-3P & TO-247) 0.25 °C/W
(TO-220) 0.50 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V - 10 A
ISM Repetitive, Pulse Width Limited by TJM - 40 A
VSD IF = - 5A, VGS = 0V, Note 1 - 3 V
trr 414 ns
QRM 5.90 μC
IRM - 28.6 A
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Resistive Switching Times
VGS = -10V, VDS = 0.5 • VDSS, ID = 0 .5 • ID25
RG = 3.3Ω (External)
IF = - 5A, -di/dt = -100A/μs
VR = -100V, VGS = 0V
© 2012 IXYS CORPORATION, All Rights Reserved
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
TO-247 (IXTH) Outline
Terminals: 1 - Gate 2 - Drain
e
∅ P
1 2 3
TO-3P (IXTQ) Outline
Pins: 1 - Gate 2 - Drain
TO-220 (IXTP) Outline
TO-263 (IXTA) Outline
IXTA10P50P IXTQ10P50P
IXTP10P50P IXTH10P50P
IXTA10P50P IXTQ10P50P
IXTP10P50P IXTH10P50P
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fi g . 1. Ou tp u t C h ar acter i sti cs @ T
J
= 25ºC
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0-10-9-8-7-6-5-4-3-2-10
V
DS
- Vo lts
I
D
- Amper es
V
GS
= - 10V
- 7V
- 5
V
- 6
V
Fi g . 2. Exten d ed Ou tp u t C h ar acter i sti cs @ T
J
= 25ºC
-26
-22
-18
-14
-10
-6
-2
-32-28-24-20-16-12-8-40
V
DS
- Vo lts
I
D
- Amper es
V
GS
= - 10V
- 8V
- 5
V
- 6
V
- 7
V
Fi g . 3. Ou tp u t C h ar acter i sti cs @ T
J
= 125ºC
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0-18-16-14-12-10-8-6-4-20
V
DS
- Vo lts
I
D
- Amperes
V
GS
= - 10V
- 7V
- 6V
- 5V
Fig. 4. R
DS(on)
Normalized to I
D
= - 5A Value vs.
Junction Tem perature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= - 10V
I
D
= - 10A
I
D
= - 5A
Fig. 5. R
DS(on)
Norm alized to I
D
= - 5A Value vs.
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
-26-22-18-14-10-6-2
I
D
- A mperes
R
DS(on)
- Normalized
V
GS
= - 10V
T
J
= 25ºC
T
J
= 125ºC
Fig. 6. Maximum Drain Current vs.
Case Temper atu r e
-11
-9
-7
-5
-3
-1
-50 -25 0 25 50 75 100 125 150
Tc - Degrees Centigrade
I
D
- Ampe res
© 2012 IXYS CORPORATION, All Rights Reserved
IXTA10P50P IXTQ10P50P
IXTP10P50P IXTH10P50P
Fig. 7. Input Adm ittance
-16
-14
-12
-10
-8
-6
-4
-2
0-6.5-6.0-5.5-5.0-4.5-4.0-3.5
V
GS
- Vo lts
I
D
- Ampe res
T
J
= 125ºC
25ºC
- 40ºC
Fi g . 8. Tr an sco n d u ctan ce
0
4
8
12
16
20
24
-18-16-14-12-10-8-6-4-20
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
-30
-25
-20
-15
-10
-5
0-3.5-3-2.5-2-1.5-1-0.5
V
SD
- Vo lts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fi g . 10. Gate C h ar g e
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
00 5 10 15 20 25 30 35 40 45 50
Q
G
- NanoCoulombs
V
GS
- Volt s
V
DS
= - 250V
I
D
= - 5A
I
G
= -1mA
Fig. 11. Capacitance
10
100
1,000
10,000
-40-35-30-25-20-15-10-50
V
DS
- Vo lts
Capacitance - PicoF arad s
f
= 1 MH
z
Ciss
Crss
Coss
Fi g . 12. F o r war d -B i as Safe Op er ati n g Area
0.1
1
10
100
10 100 1000
V
DS
- Vo lts
I
D
- Ampe res
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
25µs
1ms
100µs
R
DS(on)
Limit
10ms
DC
-
-
----
-100ms
IXTA10P50P IXTQ10P50P
IXTP10P50P IXTH10P50P
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: T_10P50P(B5)5-21-08-B
Fig. 13. Maxim um Transient T hermal Im pedance
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z(th)JC - ºC / W
