MSP1N6369E3TR - Microsemi Corp.

1500 W LOW CLAMPING FACTOR

TRANSIENT VOLTAGE SUPPRESSOR

WWW.Microsemi .COM

SCOTTSDALE DIVISION

1N6356 thru 1N6372, e3

or MPT-5 thru MPT-45C, e3

1N6356 thru 1N6372, e3

MPT-5 thru MPT-45C, e3

DESCRIPTION APPEARANCE

This Transient Voltage Suppressor (TVS) series for 1N6356 thru 1N6372 are

JEDEC registered selections for both unidirectional and bidirectional devices.

The 1N6356 thru 1N6364 are unidirectional and the 1N6365 thru 1N6372 are

bi-directional where they all provide a very low specified clamping factor for

minimal clamping voltages (VC) above their respective breakdown voltages

(VBR) as specified herein. They are most often used in protecting sensitive

components from inductive switching transients or induced secondary

lightning effects as found in lower surge levels of IEC61000-4-5 . They are

also very successful in protecting airborne avionics and electrical systems.

Since their response time is virtually instantaneous, they can also protect

from ESD and EFT per IEC61000-4-2 and IEC61000-4-4.

DO-13

(DO-202AA)

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES APPLIC ATIONS / BENEFITS

• Unidirectional and bidirectional TVS series for thru-hole

mounting

• Suppresses transients up to 1500 watts @ 10/1000 µs

• t

clamping (0 volts to V(BR) min):

Unidirectional – Less than 100 pico seconds.

Bidirectional – Less than 5 nano seconds.

• Working voltage (VWM) range 5 V to 45 V

• Low clamping factor (ratio of actual VC/VBR): 1.33 @

full rated power and 1.20 @ 50% rated power

• Hermetic sealed DO-13 metal package

• Options for screening in accordance with MIL-PRF-19500

for JAN, JANTX, JANTXV, and JANS are also available

by adding MQ, MX, MV, MSP prefixes respectively to part

numbers, e.g. MX1N6356, etc.

• RoHS Compliant devices available by adding “e3” suffix

• Surface mount equivalent packages also available as

SMCJ6356 – SMCJ6372 (consult factory for other

surface mount options)

• Plastic axial-leaded equivalents available in the

1N6373 – 1N6389 series (see separate data sheet)

• Designed to protect Bipolar and MOS Microprocessor

based systems.

• Protection from switching transients and induced RF

• ESD and EFT protection per IEC 61000-4-2 and -4-4

• Secondary lightning protection per IEC61000-4-5 with

42 Ohms source impedance:

Class 1, 2 & 3 1N6356 to 1N6372

Class 4: 1N6356 to 1N6362

• Secondary lightning protection per IEC61000-4-5 with

12 Ohms source impedance:

Class 1 & 2: 1N6356 to 1N6372

Class 3: 1N6356 to 1N6362

Class 4: 1N6356 to 1N6358

• Secondary lightning protection per IEC61000-4-5 with

2 Ohms source impedance:

Class 2: 1N6356 to 1N6361

Class 3: 1N6356 to 1N6358

• Inherently radiation hard per Microsemi MicroNote

050

MAXIMUM RAT ING S MECHANICAL AND PACKAGING

• 1500 Watts for 10/1000 μs with repetition rate of 0.01% or

less* at lead temperature (TL) 25oC (See Figs. 1, 2, & 4)

• Operating & Storage Temperatures: -65o to +175oC

• THERMAL RESISTANCE: 50oC/W junction to lead at

0.375 inches (10 mm) from body or 110 oC/W junction to

ambient when mounted on FR4 PC board with 4 mm2

copper pads (1 oz) and track width 1 mm, length 25 mm

• DC Power Dissipation*: 1 Watt at TL < +125oC 3/8” or 10

mm from body (also see Figure 5)

• Forward surge current: 200 Amps for 8.3ms half-sine

wave at TA = +25oC for unidirectional only (1N6356-6364)

• Solder Temperatures: 260 o C for 10 s (maximum)

• CASE: DO-13 (DO-202AA), welded, hermetically

sealed metal and glass

• FINISH: All external metal surfaces are Tin-Lead or

RoHS Compliant annealed matte-Tin plating

solderable per MIL-STD-750 method 2026

• POLARITY: Cathode connected to case and

polarity indicated by diode symbol

• MARKING: Part number and polarity diode symbol

• WEIGHT: 1.4 grams. (Approx)

• TAPE & REEL option: Standard per EIA-296 (add

“TR” suffix to part number)

• See package dimension on last page

Microsemi

Scottsdale Division

Page 1

* TVS devices are not typically used for dc power dissipation and are instead operated at or less than their rated standoff voltage

(VWM) except for transients that briefly drive the device into avalanche breakdown (VBR to VC region).

3-31-2006 REV B

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

1500 W LOW CLAMPING FACTOR

TRANSIENT VOLTAGE SUPPRESSOR

WWW.Microsemi .COM

SCOTTSDALE DIVISION

1N6356 thru 1N6372, e3

or MPT-5 thru MPT-45C, e3

1N6356 thru 1N6372, e3

MPT-5 thru MPT-45C, e3

ELECTRICAL CHARACTERISTICS @ 25oC (Unidirectional)

MICROSEMI

PART NUMBER

STAND-OFF

VOLTAGE

(NOTE 1)

VWM

VOLTS

MAXIMUM

REVERSE

LEAKAGE

@VWM

μA

MINIMUM*

BREAKDOWN

VOLTAGE

@ 1.0 mA

V(BR) (min)

VOLTS

MAXIMUM

CLAMPING

VOLTAGE

(Fig. 2)

IPP1 = 1A

VOLTS

MAXIMUM

CLAMPING

VOLTAGE

(Fig. 2)

@ IPP2 = 10A

VOLTS

MAXIMUM

PEAK PULSE

CURRENT

IPP3

1N6356

1N6357

1N6358

1N6359

1N6360

MPT-5

MPT-8

MPT-10

MPT-12

MPT-15

5.0

8.0

10.0

12.0

15.0

300

6.0

9.4

11.7

14.1

17.6

7.1

11.3

13.7

16.1

20.1

7.5

11.5

14.1

16.5

20.6

160

100

1N6361

1N6362

1N6363

1N6364

MPT-18

MPT-22

MPT-36

MPT-45

18.0

22.0

36.0

45.0

21.2

25.9

42.4

52.9

24.2

29.8

50.6

63.3

25.2

32.0

54.3

70.0

VF at 100 amps peak is 3.5 volts maximum at 8.3 ms half-sine wave.

ELECTRICAL CHARACTERISTICS @ 25oC (Bidirectional)

1N6365

1N6366

1N6367

1N6368

MPT-5C

MPT-8C

MPT-10C

MPT-12C

MPT-15C

5.0

8.0

10.0

12.0

15.0

300

6.0

9.4

11.7

14.1

17.6

7.1

11.4

14.1

16.7

20.8

7.5

11.6

14.5

17.1

21.4

160

100

1N6369

1N6370

1N6371

1N6372

MPT-18C

MPT-22C

MPT-36C

MPT-45C

18.0

22.0

36.0

45.0

21.2

25.9

42.4

52.9

24.8

30.8

50.6

63.3

25.5

32.0

54.3

70.0

C Suffix indicates Bidirectional

NOTE 1: TVS devices are normally selected according to the reverse “Stand Off Voltage” (VWM) which should be equal to or greater than the DC or

continuous peak operating voltage level.

* The minimum breakdown voltage as shown takes into consideration the + volt tolerance normally specified for power supply regulation on

most integrated circuit manufacturers data sheets. Similar devices are available with reduced clamping voltages where tighter regulated

power supply voltages are employed.

GRAPHS

Microsemi

Scottsdale Division

Page 2

3-31-2006 REV B

FIGURE 1 FIGURE 2

Peak Pulse Power vs. Pulse Time Typical Characteristic Clamping Voltage

vs. Peak Pulse Current

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

1500 W LOW CLAMPING FACTOR

TRANSIENT VOLTAGE SUPPRESSOR

WWW.Microsemi .COM

SCOTTSDALE DIVISION

1N6356 thru 1N6372, e3

or MPT-5 thru MPT-45C, e3

1N6356 thru 1N6372, e3

MPT-5 thru MPT-45C, e3

Pulse current (IP) in percent of IPP

Peak Value

IPP

Pulse time duration (tp) is

defined as that point where

IP decays to 50% of peak

value (IPP).

time (t) in milliseconds FIGURE 4

FIGURE 3 Typical Capacitance vs. Breakdown Voltage

Pulse wave form for exponential surge (Unidirectional Types)

PACKAGE DIMEN SIONS

FIGURE 5

Typical Capacitance vs. Breakdown Voltage

(Bidirectional Types)

Stead

-state

ower dissi

ation

(

watts

)

Microsemi

Scottsdale Division

Page 3

3-31-2006 REV B

FIG. 5 Steady-state power derating curve

–

lead Tem

erature oC

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503