Vishay Siliconix
Si4288DY
Document Number: 67078
S10-2768-Rev. A, 29-Nov-10
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1
Dual N-Channel 40 V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFETPower MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• CCFL Inverter
• DC/DC Converter
• HDD
PRODUCT SUMMARY
VDS (V) RDS(on) ()ID (A)aQg (Typ.)
40 0.020 at VGS = 10 V 9.2 4.9
0.023 at VGS = 4.5 V 8.6
S1D1
G1D1
S2D2
G2D2
SO-8
5
6
7
8
Top View
2
3
4
1
Ordering Information: Si4288DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1
G1
S1
N-Channel MOSFET
D2
G2
S2
N-Channel MOSFET
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 120 °C/W.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 40 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
9.2
A
TC = 70 °C 7.4
TA = 25 °C 7.4b, c
TA = 70 °C 5.9b, c
Pulsed Drain Current (10 µs Pulse Width) IDM 50
Source-Drain Current Diode Current TC = 25 °C IS
2.6
TA = 25 °C 1.6b, c
Pulsed Source-Drain Current ISM 50
Single Pulse Avalanche Current L = 0.1 mH IAS 10
Single Pulse Avalanche Energy EAS 5
Maximum Power Dissipation
TC = 25 °C
PD
3.1
W
TC = 70 °C 2
TA = 25 °C 2b, c
TA = 70 °C 1.28b, c
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typ. Max. Unit
Maximum Junction-to-Ambientb, d t 10 s RthJA 49 62.5 °C/W
Maximum Junction-to-Foot (Drain) Steady-State RthJF 30 40
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Document Number: 67078
S10-2768-Rev. A, 29-Nov-10
Vishay Siliconix
Si4288DY
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 µs, duty cycle 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ.aMax. Unit
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 40 V
VDS Temperature Coefficient VDS/TJID = 250 µA 49 mV/°C
VGS(th) Temperature Coefficient VGS(th)/TJ- 5.2
Gate Threshold Voltage VGS(th) VDS = VGS, ID= 250 µA 1.2 2.5 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = 40 V, VGS = 0 V 1µA
VDS = 40 V, VGS = 0 V, TJ = 55 °C 10
On-State Drain CurrentbID(on) VDS = 5 V, VGS = 10 V 20 A
Drain-Source On-State ResistancebRDS(on)
VGS = 10 V, ID = 10 A 0.0165 0.0200
VGS = 4.5 V, ID = 7 A 0.019 0.023
Forward Transconductancebgfs VDS = 15 V, ID = 10 A 35 S
Dynamica
Input Capacitance Ciss
VDS = 20 V, VGS = 0 V, ID = 1 MHz
580
pFOutput Capacitance Coss 100
Reverse Transfer Capacitance Crss 42
Total Gate Charge Qg VDS = 20 V, VGS = 10 V, ID = 10 A 10 15
nC
VDS = 20 V, VGS = 4.5 V, ID = 10 A
4.9 7.4
Gate-Source Charge Qgs 1.5
Gate-Drain Charge Qgd 1.5
Gate Resistance Rgf = 1 MHz 0.6 2.7 5.4
Tur n - O n D e l ay Time td(on)
VDD = 20 V, RL = 2
ID 10 A, VGEN = 10 V, Rg = 1
714
ns
Rise Time tr 918
Turn-Off Delay Time td(off) 16 32
Fall Time tf 816
Tur n - O n D e l ay Time td(on)
VDD = 20 V, RL = 2
ID 10 A, VGEN = 4.5 V, Rg = 1
12 24
Rise Time tr 10 20
Turn-Off Delay Time td(off) 13 26
Fall Time tf 816
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current ISTC = 25 °C 2.6 A
Pulse Diode Forward CurrentaISM 50
Body Diode Voltage VSD IS = 3 A 0.77 1.2 V
Body Diode Reverse Recovery Time trr
IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C
15 30 ns
Body Diode Reverse Recovery Charge Qrr 7.5 15 nC
Reverse Recovery Fall Time ta 9ns
Reverse Recovery Rise Time tb6
Document Number: 67078
S10-2768-Rev. A, 29-Nov-10
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3
Vishay Siliconix
Si4288DY
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
10
20
30
40
50
0.0 0.5 1.0 1.5 2.0 2.5
VGS =10Vthru4V
VGS =3V
VGS =2V
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
0.010
0.013
0.016
0.019
0.022
0.025
0 1020304050
VGS =4.5V
VGS =10V
RDS(on) - On-Resistance (Ω)
ID - Drain Current (A)
0
2
4
6
8
10
0.0 2.1 4.2 6.3 8.4 10.5
ID=10A
VDS =20V
VDS =30V
VDS =10V
Qg - Total Gate Charge (nC)
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
2
4
6
8
10
012345
TC= 125 °C
TC= 25 °C
TC= - 55 °C
VGS - Gate-to-Source Voltage (V)
ID - Drain Current (A)
Crss
0
150
300
450
600
750
0 8 16 24 32 40
Ciss
Coss
VDS - Drain-to-Source Voltage (V)
C - Capacitance (pF)
TJ - Junction Temperature (°C)
(Normalized)
RDS(on) - On-Resistance
0.5
0.8
1.1
1.4
1.7
2.0
- 50 - 25 0 25 50 75 100 125 150
ID=8A
VGS =4.5V
VGS =10V
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Document Number: 67078
S10-2768-Rev. A, 29-Nov-10
Vishay Siliconix
Si4288DY
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2
1
0.01
0.001
0.1
10
100
TJ= 25 °C
TJ= 150 °C
VSD - Source-to-Drain Voltage (V)
IS - Source Current (A)
VGS(th) Variance (V)
TJ - Temperature (°C)
- 0.8
- 0.6
- 0.4
- 0.2
0.0
0.2
0.4
- 50 - 25 0 25 50 75 100 125 150
ID=5mA
ID= 250 μA
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
RDS(on) - On-Resistance (Ω)
VGS - Gate-to-Source Voltage (V)
0.000
0.016
0.032
0.048
0.064
0.080
012345678910
TJ=25 °C
TJ= 125 °C
ID=10A
0
10
20
30
40
50
011100.0 0.01 0.1
Time (s)
Power (W)
Safe Operating Area
0.01
100
1
100
0.01
0.1
10 s
10 ms
0.1 1 10
10
TA= 25 °C
Single Pulse
1ms
DC
BVDSS Limited
1s
100 ms
Limited by RDS(on)*
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specied
ID - Drain Current (A)
Document Number: 67078
S10-2768-Rev. A, 29-Nov-10
www.vishay.com
5
Vishay Siliconix
Si4288DY
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
2
4
6
8
10
0 25 50 75 100 125 150
TC - Case Temperature (°C)
ID - Drain Current (A)
Power Derating, Junction-to-Foot
0.0
0.8
1.6
2.4
3.2
4.0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power (W)
Power Derating, Junction-to-Ambient
0.0
0.3
0.6
0.9
1.2
1.5
0 25 50 75 100 125 150
TA - Ambient Temperature (°C)
Power (W)
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Document Number: 67078
S10-2768-Rev. A, 29-Nov-10
Vishay Siliconix
Si4288DY
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67078.
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10-3 10-2 01110-1
10-4
0.2
0.1
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
0.05
Single Pulse
0.02
Vishay Siliconix
Package Information
Document Number: 71192
11-Sep-06
www.vishay.com
1
DIM
MILLIMETERS INCHES
Min Max Min Max
A 1.35 1.75 0.053 0.069
A10.10 0.20 0.004 0.008
B 0.35 0.51 0.014 0.020
C 0.19 0.25 0.0075 0.010
D 4.80 5.00 0.189 0.196
E 3.80 4.00 0.150 0.157
e 1.27 BSC 0.050 BSC
H 5.80 6.20 0.228 0.244
h 0.25 0.50 0.010 0.020
L 0.50 0.93 0.020 0.037
q0°8°0°8°
S 0.44 0.64 0.018 0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
4
3
12
5
6
87
HE
h x 45
C
All Leads
q0.101 mm
0.004"
L
BA
1
A
e
D
0.25 mm (Gage Plane)
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
S
Application Note 826
Vishay Siliconix
www.vishay.com Document Number: 72606
22 Revision: 21-Jan-08
APPLICATION NOTE
RECOMMENDED MINIMUM PADS FOR SO-8
0.246
(6.248)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.172
(4.369)
0.152
(3.861)
0.047
(1.194)
0.028
(0.711)
0.050
(1.270)
0.022
(0.559)
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Revision: 08-Feb-17 1Document Number: 91000
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