SK1020D1 ... SK10100D1
SK1020D1 ... SK10100D1
Surface Mount Schottky Rectifiers – Single Diode
Schottky-Gleichrichter für die Oberflächenmontage – Einzeldiode
Version 2012-04-10
Dimensions - Maße [mm]
Nominal Current
Nennstrom
10 A
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
20...100 V
Plastic case
Kunststoffgehäuse
TO-252AA
D-PAK
Weight approx.
Gewicht ca.
0.32g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings and Characteristics Grenz- und Kennwerte
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
Forward Voltage
Durchlass-Spannung
VF [V] 1)
IF = 5 A IF = 10 A
SK1020D1 20 20 < 0.51 < 0.55
SK1030D1 30 30 < 0.51 < 0.55
SK1040D1 40 40 < 0.51 < 0.55
SK1045D1 45 45 < 0.51 < 0.55
SK1050D1 50 50 < 0.62 < 0.70
SK1060D1 60 60 < 0.62 < 0.70
SK1080D1 80 80 < 0.71 < 0.83
SK10100D1 100 100 < 0.71 < 0.83
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TC = 100°C IFAV 10 A
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz IFRM 30 A 2)
Peak forward surge current
50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
SK1020...
SK1060D1
TA = 25°C IFSM 135/150 A
SK1080...
SK10100D1
TA = 25°C IFSM 115/125 A
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
TA = 25°C i2t 80 A2s
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-50...+150°C
-50...+175°C
1 Tj = 25°C
2 Max. temperature of the case TC = 100°C – Max. Temperatur des Gehäuses TC = 100°C
© Diotec Semiconductor AG http://www.diotec.com/ 1
1.0
0.5
2.3
2
4
3
1
Type
Typ
5.3
±0.2
6.6
±0.2
2.7 7.0
±0.2
16.0
±0.2
1
3
2/4
2.3
SK1020D1 ... SK10100D1
Characteristics Kennwerte
Leakage current
Sperrstrom
SK1020D1...
SK1045D1
Tj = 25°C
Tj = 100°C
VR = VRRM IR< 300 µA
< 45 mA
Leakage current
Sperrstrom
SK1050D1...
SK10100D1
Tj = 25°C
Tj = 100°C
VR = VRRM IR< 200 µA
< 25 mA
Thermal resistance junction to case
Wärmewiderstand Sperrschicht - Gehäuse
RthC < 2.5 K/W
2http://www.diotec.com/ © Diotec Semiconductor AG
Rated forward current vs. temp. of the case
in Abh. v. d. GehäusetemperaturZul. Richtstrom
120
100
80
60
40
20
0
I
FAV
[%]
[°C]
T
C
150100
50
0
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
SK1020D1...SK1045D1
SK1050D1, SK1060D1
SK1080D1, SK10100D1
10
10
1
10
10
2
-1
-2
[A]
I
F
0V
F
0.4 0.6 [V] 1.0
