SM3G48, USM3G48, SM3J48, USM3J48
2006-10-27
1
TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM3G48, USM3G48, SM3J48, USM3J48
AC POWER CONTROL APPLICATIONS
z Repetitive Peak Off-State Voltage: VDRM=400V, 600V
z R.M.S On-State Current: IT (RMS)=3A
z Gate Trigger Current: IGT=20mA Max.
Unit: mm
SM3G48, SM3J48 USM3G48, USM3J48
JEDEC ― JEDEC ―
JEITA ― JEITA ―
TOSHIBA 13-10J1A TOSHIBA 13-10J2A
Weight: 1.7g
MARKING
Part No.
(or abbreviation code) Part No.
M3G48 SM3G48, USM3G48
*1
M3J48 SM3J48, USM3J48
Lot No.
A
line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
M3G48
Characteristics
indicator
Part No. (or abbreviation code) *1
SM3G48, USM3G48, SM3J48, USM3J48
2006-10-27
2
ABSOLUTE MAXIMUM RATINGS
CHARACTERISTIC SYMBOL RATING UNIT
(U)SM3G48 400
Repetitive Peak
Off-State Voltage (U)SM3J48
VDRM 600
V
R.M.S On-State Current IT (RMS) 3 A
30 (50Hz)
Peak One Cycle Surge On-State
Current (Non-Repetitive) ITSM 33 (60Hz)
A
I2t Limit Value I2t 4.5 A2s
Critical Rate of Rise of On-State
Current (Note 1)
di / dt 50 A / μs
Peak Gate Power Dissipation PGM 5 W
Average Gate Power Dissipation PG (AV) 0.5 W
Peak Forward Gate Voltage VGM 10 V
Peak Forward Gate Current IGM 2 A
Junction Temperature Tj −40~125 °C
Storage Temperature Range Tstg −40~125 °C
Note 1: VDRM=0.5×Rated
ITM≤4.5A
tgw≥10μs
tgr≤250ns
igp=IGT×2.0
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Repetitive Peak Off-State Current IDRM VDRM=Rated ― ― 20 μA
I T2 (+), Gate (+) ― ― 1.5
II T2 (+), Gate (−) ― ― 1.5
III T2 (−), Gate (−) ― ― 1.5
Gate Trigger Voltage
IV
VGT VD=12V
RL=20Ω
T2 (−), Gate (+) ― ― ―
V
I T2 (+), Gate (+) ― ― 20
II T2 (+), Gate (−) ― ― 20
III T2 (−), Gate (−) ― ― 20
Gate Trigger Current
IV
IGT VD=12V
RL=20Ω
T2 (−), Gate (+) ― ― ―
mA
Peak On-State Voltage VTM I
TM=4.5A ― ― 1.5 V
Gate Non-Trigger Voltage VGD V
D=Rated, Tc=125°C 0.2 ― ― V
Holding Current IH V
D=12V, ITM=1A ― ― 30 mA
Thermal Resistance Rth (j-c) Junction to Case, AC ― ― 3.6 °C / W
Critical Rate of Rise of Off-State
Voltage dv / dt
VDRM=Rated, Tj=125°C
Exponential Rise ― 300 ― V / μs
Critical Rate of Rise of Off-State
Voltage at Commutation (dv / dt) c
VDRM=400V, Tj=125°C
(di /dt) c=−2.0A / ms 10 ― ― V / μs
SM3G48, USM3G48, SM3J48, USM3J48
2006-10-27
3
SM3G48, USM3G48, SM3J48, USM3J48
2006-10-27
4
SM3G48, USM3G48, SM3J48, USM3J48
2006-10-27
5
RESTRICTIONS ON PRODUCT USE 20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
