BCW66K NPN Silicon AF Transistors * For general AF applications 2 3 * High current gain 1 * Low collector-emitter saturation voltage * Complementary type: BCW68 (PNP) * Pb-free (RoHS compliant) package * Qualified according AEC Q101 Type Marking Pin Configuration Package BCW66KF EFs 1=B 2=E 3=C SOT23 BCW66KG EGs 1=B 2=E 3=C SOT23 BCW66KH EHs 1=B 2=E 3=C SOT23 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 45 Collector-base voltage VCBO 75 Emitter-base voltage VEBO 5 Collector current IC Peak collector current, tp 10 ms ICM Base current IB 100 Peak base current IBM 200 Total power dissipation- Ptot 500 mW Junction temperature Tj 150 C Storage temperature Tstg Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value 800 1 Unit V mA A mA TS 115 C 1 -65 ... 150 Value 70 Unit K/W 2011-09-30 BCW66K Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 45 Unit V IC = 10 mA, IB = 0 Collector-base breakdown voltage V(BR)CBO 75 - - V(BR)EBO 5 - - IC = 10 A, IE = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector-base cutoff current A ICBO VCB = 45 V, IE = 0 - - 0.02 VCB = 45 V, IE = 0 , TA = 150 C - - 20 - - 20 Emitter-base cutoff current IEBO nA VEB = 5 V, IC = 0 DC current gain2) - hFE IC = 100 A - 10 mA, VCE = 1 V, hFE-grp.F 75 - - IC = 100 A - 10 mA, VCE = 1 V, hFE-grp.G 110 - - IC = 100 A - 10 mA, VCE = 1 V, hFE-grp.H 180 - - IC = 100 mA, VCE = 1 V, hFE-grp.F 100 160 250 IC = 100 mA, VCE = 1 V, hFE-grp.G 160 250 400 IC = 100 mA, VCE = 1 V, hFE-grp.H 250 350 630 IC = 500 mA, VCE = 1 V, hFE-grp.F, G, H 40 - - Collector-emitter saturation voltage2) V VCEsat IC = 100 mA, IB = 10 mA - - 0.3 IC = 500 mA, IB = 50 mA - - 0.45 IC = 100 mA, IB = 10 mA - - 1.25 IC = 500 mA, IB = 50 mA - - 1.25 Base emitter saturation voltage2) VBEsat 1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) 2Pulse test: t < 300s; D < 2% 2 2011-09-30 BCW66K Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. fT - 170 - MHz Ccb - 3 - pF Ceb - 40 - AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 20 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz 3 2011-09-30 BCW66K DC current gain hFE = (IC) VCE = 1 V 10 3 Collector-emitter saturation voltage IC = (VCEsat ), hFE = 10 BCW 65/66 5 EHP00396 BCW 65/66 10 3 EHP00395 mA 100 C 150 C 25 C -50 C C h FE 10 2 25 C 10 2 -50 C 5 5 10 1 5 10 1 0 10 5 5 10 0 10 -1 5 10 0 5 10 1 5 10 2 10 -1 mA 10 3 0 200 400 600 mV 800 C VCE sat Collector cutoff current ICBO = (TA) VCB = VCEmax Base-emitter saturation voltage IC = (VBEsat), hFE = 10 10 3 BCW 65/66 EHP00394 10 5 nA mA 150 C 25 C -50 C C 2 10 CB0 BCW 65/66 EHP00393 10 4 5 5 10 3 10 max 5 1 5 10 2 5 typ 0 10 10 5 1 5 10 -1 0 1 2 3 V 10 0 4 0 50 100 C 150 TA VBE sat 4 2011-09-30 BCW66K Transition frequency fT = (IC) VCE = 5 V 10 3 BCW 65/66 Collector-base capacitance Ccb = (VCB) Emitter-base capacitance Ceb = (VEB) EHP00391 75 pF MHz fT 5 60 RTF-2 55 10 50 45 40 2 CEB 35 30 5 25 20 15 10 CCB 5 10 1 10 0 10 1 10 2 mA 0 0 10 3 2 4 6 8 10 12 14 V 16 C 20 RTF-1 Total power dissipation P tot = (TS) Permissible Pulse Load Ptotmax/PtotDC = (tp ) 10 3 550 BCW 65/66 Ptot max 5 Ptot DC EHP00392 tp D= T 450 tp T 400 10 2 350 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 300 250 200 10 1 150 5 100 50 0 0 15 30 45 60 75 90 105 120 10 0 10 -6 150 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 2011-09-30 Package SOT23 BCW66K 0.4 +0.1 -0.05 1) 2 0.08...0.1 C 0.95 1.3 0.1 1 2.4 0.15 3 0.1 MAX. 10 MAX. B 1 0.1 10 MAX. 2.9 0.1 0.15 MIN. Package Outline A 5 0...8 1.9 0.2 0.25 M B C M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 1.3 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s 2005, June Date code (YM) Pin 1 BCW66 Type code Standard Packing Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel 4 0.2 8 2.13 2.65 0.9 Pin 1 1.15 3.15 6 2011-09-30 BCW66K Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 2011-09-30