2007
▶DRAM and NAND Flash memories are focus products
▶CMOS Image Sensors will diversify product portfolio
▶2008 Revenues of USD$6.2bn
▶Market capitalization of USD$2.4bn as of December 2008
▶Global presence with 4 manufacturing sites and 26 sales offices worldwide
▶21,400 employees worldwide
Corporate Profile
Hynix Semiconductor is a leading supplier of advanced semiconductor
memory and Image Sensor products.
We design, develop, manufacture and market a wide variety of DRAM and
NAND Flash memories, and CMOS Image Sensors (CIS).
Memory components are an essential part of leading-edge Computing,
Consumer, Communication and Wireless applications.
Image Sensors are used in a wide range of wireless communications and
handheld consumer applications
Recent
Accomplishments
2009~2008
Dream of a Rich Future
is Now Reality
2009
03·Developed and acquired Intel validation for
2-Rank 8GB DDR3 RDIMM
02·Developed the World’s First 44nm DDR3 DRAM
2008
12·Developed the World’s First 2Gb Mobile DRAM
11·Introduced Industry's Fastest 7Gbps,
1Gb GDDR5 Graphics DRAM
08·Completed Construction of 300mm Fabrication
Plant of 3rd Factory in Cheongju
·Demonstrated World’s First 16GB 2-Rank
R-DIMM Using MetaRAMTM Technology
04·Developed the world's fastest Mobile LPDDR2
02·Introduced 2-Rank 8GB DDR2 RDIMM
01·Signed an agreement for joint R&D for
next-generation non-volatile memory technology
with Numonyx
·Announced 800MHz, 1GB / 2GB UDIMM Intel
Validation
2007
11·Signed a partnership agreement with
Siliconfile Technologies Inc. to cooperate on
CMOS Image Sensor business
·Acquired Intel validation for 1Gb DDR2 DRAM
·Developed industry’s first 1Gb GDDR5 DRAM
10·Signed PRAM technology and licensing
agreement with Ovonyx
09·Developed world’s first 24 stack NAND Flash
multi-chip package
08·Signed ZRAM technology and licensing
agreement with Innovative Silicon
·Developed industry’s fastest, smallest 1Gb
Mobile DRAM
2007
Main Memory _ Graphics Memory _ Consumer Memory _ Mobile Memory _ NAND Flash Memory_ CIS
p_4 p_8 p_10 p_12 p_14 p_17
05·Acquired the industry’s first validation on
DDR3 DRAM from Intel
03·Signed cross licensing agreement with
Sandisk and signed MOU for joint
development of x4 NAND Flash technology
·Developed the world’s fastest ECC Mobile
DRAM
01·Founded sales subsidiary in India (HSIS)
·Developed world’s fastest memory module
based on ‘wafer level package’ technology
2006~2004
2006
12·Announced industry’s first 60nm 1Gb DDR2
800MHz based modules
·Developed the world’s fastest 200MHz 512Mb
Mobile DRAM
09·Opened 300mm R&D (3R) fab in Icheon
04·Founded manufacturing company in China (HSMC)
2005
04·Established JV with ST Micro in China (HSSL)
01·Signed strategic alliance with ProMOS
2004
10·Transferred non-memory product lines to
MagnaChip Semiconductor Ltd.
08·Signed cooperative agreement with Wuxi City,
China to build chip plant
2003~1983
2003
06·Established Environment / Safety / Health Lab
04·Established strategic joint development alliance
with STMicro for NAND Flash
2001
03·Changed corporate name to ‘Hynix Semiconductor Inc.’
1999
10·Merged with LG Semicon
1983
02·Established Hyundai Electronics Industries Co., Ltd.
DDR2 VS. DDR3
DDR3
Key Features of High Speed Interface
DDR2 VS. DDR3
Performance / Watt Comparison
Subject DDR2 DDR3
Data Rate 400, 533, 667, 800 Mbps 800, 1066, 1333, 1600 Mbps
VDD / VDDQ 1.8V ±0.1V 1.5V ±0.075V
Support Density 256Mb ~ 4Gb 512Mb ~ 4Gb
Bank 512Mb : 4 Bank / 1Gb : 8 Bank 8 Bank
Data Pre-fetch 4 bit 8 bit
Package Type
60FBGA for x4 / x8, 84FBGA for x16 78FBGA for x4 / x8, 96FBGA for x16
Interface SSTL-18 SSTL-15
DQS Signaling Single / Differential Differential Only
Driver Calibration Off-Chip Driver Calibration Self calibration with ZQ pin
DQS-CLK De-skewing No Yes (Write Leveling)
On Die Termination Yes Yes / Dynamic ODT
Reset pin No Yes (Soft power-up)
Main
Memory
DDR3
General Description
The next generation main memory standard, DDR3 SDRAM, can transfer data twice as fast as the current generation DDR2 DRAM’s.
DDR3 SDRAM boasts high performance and low power consumption. It supports data transfer rate up to 1.6Gb/s and operates at a lower power supply
voltage of 1.5V compared to DDR2. The DDR3 SDRAM is eco-friendly for it can operate at even lower voltage of 1.35V contributing to lower power
dissipation and extended battery life in mobile systems. The low-power operation is also of benefit to high-density memory systems such as servers and
data centers.
Hynix plans to offer DDR3 densities from 1Gb to 4Gb, and is currently supporting up to 2Gb DDR3. Hynix’s DDR3 modules exploit functions such as ZQ
calibration, fly-by topology, dynamic on-die-termination, and levelization to ensure better signal integrity which guarantees higher performance.
Experience High Speeds!
4 Hynix Semiconductor Inc.
General Description
It is well known that demand for Notebook PCs has exceeded Desktop PCs. Users now demand a powerful, full-featured mobile system, with low
power consumption, extended battery life and connectivity. New portable form factors such as Netbook have emerged in the PC market. Relatively
low price point is the primary driving factor, especially in light of the current global economic conditions. Mobility and weight are other features that
make this product attractive to consumers.
Servers are now consolidating and adopting Virtualization technology to lower TCO (Total Cost of Ownership), with lower hardware costs and
efficiencies. Higher speeds and higher density memory would be key requirements in a Virtualized server environment.
Hynix has always been at the leading edge of
memory innovation. Hynix is currently supplying
66nm 1Gb DDR2/DDR3 and has started
ramping 54nm 1Gb DDR2/DDR3 production.
Hynix offers DDR3 Registered DIMMs which
provide higher memory density, speed and
memory bandwidth, and reliability for high
performance servers.
Hynix is also developing 1.35V DDR3 RDIMMs
for lower power consumption in server platforms.
Main
Memory
PC memory & Server Memory
SODIMM
Your notebook just got a little lighter and faster
Portable computing applications can benefit from Hynix’s proprietary
packaging technology used in high density SODIMMs.
SODIMM Features
- 512MB ~ 4GB DDR3 SODIMMs in volume production
- Industry standard thickness allows easy installation
- Applications include Notebooks in all form factors,
Slim PC’s, All-in-One PC’s and UMPCs
- Speeds up to 800MHz DDR2
- Speeds up to 1600MHz DDR3
5Hynix Semiconductor Inc.
RDIMM
Improve reliability of your server systems
with Hynix Registered DIMMs.
RDIMM Features
- 1GB ~ 16GB DDR3 RDIMMs in volume production
- Industry standard thickness allows easy installation
- Low-power operation for servers and datacenters
- Speeds up to 800MHz DDR2
- Speeds up to 1333MHz DDR3
DDR2 / DDR3 Speed Migration
High Density
in small packages!
Most reliable memory!
DDR2 SDRAM MODULE (240pin-UDIMM)
512Mx64 256Mx8 DDR2 800-666 HMP351U6AFR8C-S6 FBGA (60ball) 2 30mm Now
4GB DDR2 667-555 HMP351U6AFR8C-Y5 FBGA (60ball) 2 30mm Now
512Mx72 256Mx8 DDR2 800-666 HMP351U7AFR8C-S6 FBGA (60ball) 2 30mm Now
DDR2 667-555 HMP351U7AFR8C-Y5 FBGA (60ball) 2 30mm Now
256Mx64 128Mx8 DDR2 800-555 HYMP125U64CP8-S5 FBGA (60ball) 2 30mm Now
2GB HMP125U6EFR8C-S5 FBGA (60ball) 2 30mm Now
1.8V 256Mx72 128Mx8 DDR2 800-555 HYMP125U72CP8-S5 FBGA (60ball) 2 30mm Now
HMP125U7EFR8C-S5 FBGA (60ball) 2 30mm Now
128Mx64 128Mx8 DDR2 800-555 HYMP112U64CP8-S5 FBGA (60ball) 1 30mm Now
HMP112U6EFR8C-S5 FBGA (60ball) 1 30mm Now
1GB 128Mx72 128Mx8 DDR2 800-555 HYMP112U72CP8-S5 FBGA (60ball) 1 30mm Now
HMP112U7EFR8C-S5 FBGA (60ball) 1 30mm Now
128Mx64 64Mx8 DDR2 800-555 HMP512U6FFP8C-S5 FBGA (60ball) 2 30mm Now
128Mx72 64Mx8 DDR2 800-555 HMP512U7FFP8C-S5 FBGA (60ball) 2 30mm Now
VDD BASED COM. SPEED PART NUMBER COMPONENT PKG.
#OF RANK
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DENSITY ORG.
MODULE
DDR2 SDRAM MODULE (240pin-RDIMM)
512Mx4 DDR2 800-555 HMP31GP7AFR4C-S5 FBGA (60ball) 2 30mm Now
8GB 512Mx4 DDR2 800-555 HMP31GP7EMR4C-S5 FBGA (63ball) 4 30mm Now
1Gx72
DDR2 667-555 HYMP31GP72CMP4-Y5 FBGA (63ball) 4 30mm Now
(DDP) HMP31G7EMR4C-Y5 FBGA (63ball) 4 30mm Now
1.8V 4GB 512Mx72 256Mx4 DDR2 800-555 HYMP151P72CP4-S5 FBGA (60ball) 2 30mm Now
HMP151P7EFR4C-S5 FBGA (60ball) 2 30mm Now
128MX8 DDR2 800-555 HYMP125P72CP8-S5 FBGA (60ball) 2 30mm Now
HMP125P7EFR8C-S5 FBGA (60ball) 2 30mm Now
2GB 256Mx72 256MX4 DDR2 800-555 HYMP125P72CP4-S5 FBGA (60ball) 1 30mm Now
HMP125P7EFR4C-S5 FBGA (60ball) 1 30mm Now
128Mx4 DDR2 667-555 HMP525P7FFP4C-Y5 FBGA (60ball) 2 30mm Now
VDD BASED COM. SPEED PART NUMBER COMPONENT PKG.
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DDR2 SDRAM MODULE (240pin-VLP RDIMM)
1Gx4 DDR2 667-555 HYMP41GP72CNP4L-Y5 FBGA (65ball) 4 18.3mm Now
8GB 1Gx72 (QDP) DDR2 533-444 HYMP41GP72CNP4L-C4 FBGA (65ball) 4 18.3mm Now
1Gx4 DDR2 800-555 HMP41GV7AMR4C-S5 FBGA (63ball) 4 18.3mm Now
1.8V (DDP) DDR2 667-555 HMP41GV7AMR4C-Y5 FBGA (63ball) 4 18.3mm Now
4GB 512Mx72 512Mx4 DDR2 800-555 HYMP351P72CMP4L-S5 FBGA (63ball) 2 18.3mm Now
(DDP) HMP351V7EMR4C-S5 FBGA (63ball) 2 18.3mm Now
2GB 256Mx72 256MX4 DDR2 800-555 HYMP125P72CP4L-S5 FBGA (60ball) 2 18.3mm Now
HMP125V7EFR4C-S5 FBGA (60ball) 2 18.3mm Now
VDD BASED COM. SPEED PART NUMBER COMPONENT PKG.
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MODULE
DDR2 SDRAM MODULE (240pin-SODIMM)
4GB 512Mx64 256Mx8 DDR2 800-666 HMP351S6AFR8C-S6 FBGA (60ball) 2 30mm Now
2GB 256Mx64 128Mx8 DDR2 800-555 HYMP125S64CP8-S5 FBGA (60ball) 2 30mm Now
1.8V HMP125S6EFR8-S5 FBGA (60ball) 2 30mm Now
64Mx16 DDR2 800-555 HYMP112S64CP6-S5 FBGA (60ball) 2 30mm Now
1GB 128Mx64 HMP112S6EFR6-S5 FBGA (60ball) 2 30mm Now
128Mx8 DDR2 667-555 HYMP512S64CP8-Y5 FBGA (60ball) 2 30mm Now
VDD BASED COM. SPEED PART NUMBER COMPONENT PKG.
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DDR2 SDRAM MODULE (240pin-FBDIMM)
512Mx4 DDR2 800-555 HMP31GF7EMR4C-S5xx FBGA (63ball) 4 30.35mm Now
8GB 1Gx72 (DDP) HYMP31GF72CMP4xx-S5 FBGA (63ball) 4 30.35mm Now
512Mx4 DDR2 800-666 HMP31GF7AFR4C-S6xx FBGA (60ball) 2 30.35mm Now
256Mx4 DDR2 800-555 HMP151F7EFR4C-S5xx FBGA (60ball) 2 30.35mm Now
4GB 512Mx72 HYMP151F72CP4xx-S5 FBGA (60ball) 2 30.35mm Now
1.8V 128Mx8 DDR2 800-555 HMP151F7EFR8C-S5xx FBGA (60ball) 4 30.35mm Now
HYMP151F72CP8xx-S5 FBGA (60ball) 4 30.35mm Now
128MX8 DDR2 800-555 HMP125F7EFR8C-S5xx FBGA (60ball) 2 30.35mm Now
2GB 256Mx72 HYMP125F72CP8xx-S5 FBGA (60ball) 2 30.35mm Now
128MX4 DDR2 800-555 HMP525F7FFP4C-S5xx FBGA (60ball) 2 30.35mm Now
HYMP525F72CP4xx-S5 FBGA (60ball) 2 30.35mm Now
8GB 1Gx72 512Mx4 DDR2 667-555 HMP31GL7AFR4C-Y5xx FBGA (60ball) 2 30.35mm Now
4GB 512Mx72 256Mx4 DDR2 667-555 HMP151L7EFR4C-Y5xx FBGA (60ball) 2 30.35mm Now
1.55V HYMP151L72CP4xx-Y5 FBGA (60ball) 2 30.35mm Now
2GB 256Mx72 128MX8 DDR2 667-555 HMP125L7EFR8C-Y5xx FBGA (60ball) 2 30.35mm Now
HYMP125L72CP8xx-Y5 FBGA (60ball) 2 30.35mm Now
VDD BASED COM. SPEED PART NUMBER COMPONENT PKG.
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6 Hynix Semiconductor Inc.
■FBD P/N xx : (AMB vender)(Revison) ■AMB vender N: intel, D: IDT, E NEC
“Not all products are listed here. Please contact local sales administrator for the complete list of products.”
Main Memory
Product Line-up
DDR3 SDRAM MODULE (240pin-UDIMM)
512Mx64 256Mx8 1333-999 HMT351U6MFR8C-H9 FBGA (82ball) 2 30mm Now
4GB HMT351U6AFR8C-H9 FBGA (82ball) 2 30mm Now
512Mx72 256Mx8 1333-999 HMT351U7MFR8C-H9 FBGA (82ball) 2 30mm Now
HMT351U7AFR8C-H9 FBGA (82ball) 2 30mm Now
256Mx64 128Mx8 1333-999 HMT125U6AFP8C-H9 FBGA (78ball) 2 30mm Now
1.5V 2GB HMT125U6BFR8C-H9 FBGA (78ball) 2 30mm Now
256Mx72 128Mx8 1333-999 HMT125U7AFP8C-H9 FBGA (78ball) 2 30mm Now
HMT125U7BFR8C-H9 FBGA (78ball) 2 30mm Now
128Mx64 128Mx8 1333-999 HMT112U6AFP8C-H9 FBGA (78ball) 1 30mm Now
1GB HMT112U6BFR8C-H9 FBGA (78ball) 1 30mm Now
128Mx72 128Mx8 1333-999 HMT112U7AFP8C-H9 FBGA (78ball) 1 30mm Now
HMT112U7BFR8C-H9 FBGA (78ball) 1 30mm Now
VDD BASED COM. SPEED PART NUMBER COMPONENT PKG.
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MODULE
DDR3 SDRAM MODULE (240pin-VLP RDIMM)
8GB 1Gx72 1Gx4 (DDP) 1066-777 HMT41GV7AMR4C-G7 FBGA (82ball) 4 18.75mm Q3 '09
512Mx4 1333-999 HMT351V7AMP4C-H9 FBGA (78ball) 2 18.75mm Now
(DDP) HMT351V7BMR4C-H9 FBGA (78ball) 2 18.75mm Apr '09
4GB 512Mx72 256Mx8 1066-777 HMT351V7AMR8C-G7 FBGA (78ball) 4 18.75mm Now
(DDP) HMT351V7BMR8C-G7 FBGA (78ball) 4 18.75mm Apr '09
1.5V 512Mx4 (Planar) 1333-999 HMT351V7AFR8C-H9 FBGA (82ball) 2 18.75mm Q3 '09
2GB 256Mx72 256Mx4 1333-999 HMT125V7AFP4C-H9 FBGA (78ball) 1 18.75mm Now
HMT125V7BFR4C-H9 FBGA (78ball) 1 18.75mm Now
2GB 256Mx72 128Mx8 1333-999 HMT125V7AFP8C-H9 FBGA (78ball) 2 18.75mm Now
HMT125V7BFR8C-H9 FBGA (78ball) 2 18.75mm Now
VDD BASED COM. SPEED PART NUMBER COMPONENT PKG.
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DDR3 SDRAM MODULE (240pin-SODIMM)
4GB 512Mx64 256Mx8 1333-999 HMT351S6AFR8C-H9 FBGA (82ball) 2 30mm Q3 '09
2GB 256Mx64 128Mx8 1333-999 HMT125S6AFP8C-H9 FBGA (78ball) 2 30mm Now
1.5V HMT125S6BFR8C-H9 FBGA (78ball) 2 30mm Now
1GB 128Mx64 64Mx16 1333-999 HMT112S6AFP6C-H9 FBGA (96ball) 2 30mm Now
HMT112S6BFR6C-H9 FBGA (96ball) 2 30mm Now
VDD BASED COM. SPEED PART NUMBER COMPONENT PKG.
#OF RANK
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DENSITY ORG.
MODULE
DDR3 SDRAM MODULE (240pin-RDIMM)
1Gx4 (DDP) 1066-777 HMT42GR7AMR4C-G7 FBGA (82ball) 4 30mm Q3 '09
16GB 2Gx72 512Mx8 1333 HMT42GR7AUP4C-HE FBGA (82ball) 2 30mm Q3 '09
(MetaRAM DDP) 1066 HMT42GR7AUP4C-GC FBGA (82ball) 2 30mm Q3 '09
512Mx4 (Planar) 1333-999 HMT31GR7AFR4C-H9 FBGA (82ball) 2 30mm June '09
256Mx8 1066-777 HMT31GR7AFR8C-G7 FBGA (82ball) 4 30mm June '09
8GB 1Gx72 512Mx4 1066-777 HMT31GR7AMP4C-G7 FBGA (78ball) 4 30mm Now
(DDP) HMT31GR7BMR4C-G7 FBGA (78ball) 4 30mm April '09
256Mx8 1333 HMT31GR7AUP4C-HF FBGA (78ball) 2 30mm May '09
(MetaRAM DDP) 1066 HMT31GR7AUP4C-GC FBGA (78ball) 2 30mm Now
256Mx8 1333-999 HMT351R7AFR8C-H9 FBGA (82ball) 2 30mm June '09
1.5V 128Mx8 1066-777 HMT151R7AFP8C-G7 FBGA (78ball) 4 30mm Now
4GB 512Mx72 HMT151R7BFR8C-G7 FBGA (78ball) 4 30mm Now
256Mx4 1333-999 HMT151R7AFP4C-H9 FBGA (78ball) 2 30mm Now
HMT151R7BFR4C-H9 FBGA (78ball) 2 30mm Now
256Mx4 1333-999 HMT125R7AFP4C-H9 FBGA (78ball) 1 30mm Now
HMT125R7BFR4C-H9 FBGA (78ball) 1 30mm Now
256Mx8 1333-999 HMT325R7AFR8C-H9 FBGA (82ball) 1 30mm June '09
2GB 256Mx72 128Mx8 1333-999 HMT125R7AFP8C-H9 FBGA (78ball) 1 30mm Now
HMT125R7BFR8C-H9 FBGA (78ball) 1 30mm Now
256Mx8 1066-777 HMT325R7AFR8C-G7 FBGA (82ball) 1 30mm June '09
128Mx8 1066-777 HMT125R7AFP8C-G7 FBGA (78ball) 1 30mm Now
HMT125R7BFR8C-G7 FBGA (78ball) 1 30mm Now
VDD BASED COM. SPEED PART NUMBER COMPONENT PKG.
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7Hynix Semiconductor Inc.
The information in this product brochure is subject to change. Up to date information on
our products and technologies may be obtained from our website. www.hynix.com
“Not all products are listed here. Please contact local sales administrator for the complete list of products.”
Main Memory
Product Line-up
Graphics Product Spec. Comparison
Graphics
Memory
8 Hynix Semiconductor Inc.
Experience the Richness
of Entertainment
General Description
Since the introduction of the world’s first Graphics DDR SDRAM in
1999, Hynix has played a leadership role in the Graphics memory
market by offering cost effective and high performance products.
Last November Hynix introduced the world’s fastest 1Gb GDDR5
Graphics DRAM. The newly introduced 1Gb GDDR5 is built on the
company’s leading edge 54 nm process technology. It operates at
7Gbps which is 40% improvement compared to 66nm 5Gbps
GDDR5, and processes up to 28GB/s (Gigabyte per seconds). It is
also designed to minimize power consumption at 1.35V power supply.
This product is ideal in high-end applications including high-end PC
and next generation game consoles which require higher graphic
performance and quality to deliver a rich entertainment experience to
the end user.
Hynix also supports GDDR3, DDR3 and DDR2 products for
performance and mainstream markets.
Hynix will contribute more values for our customers success with the
higher performance, quality and technology leadership.
Applications
Picture 1. Graphic Memory Bandwidth Trend
54nm 1Gb GDDR5 General Information
Product 1Gb GDDR5 (54nm Tech)
Bit Organization 16Bank ×2Mbit ×32 I/O
16Bank ×4Mbit ×16 I/O
Op. Frequency Up to 7Gbps
Power Supply VDD(Q) = 1.5V
Package FBGA 170 ball (12mm ×14mm)
Interface POD_15
Refresh : 8192 cycle / 32ms
Function CL = 5 ~ 20, BL = 8
Burst Type : Sequential
Data Mask @ Write
Graphics Memory
Product Line-up
9Hynix Semiconductor Inc.
GRAPHICS DDR2 SDRAM
500MHz (2.0ns) H5PS1G63EFR-20L FBGA (84ball) 8Bank, 1.8V / 1.8V Now
1Gb 64M×16 400MHz (2.5ns) H5PS1G63EFR-25C FBGA (84ball) 8Bank, 1.8V / 1.8V Now
400MHz (2.5ns) HY5PS1G1631CFR-25C FBGA (84ball) 8Bank, 1.8V / 1.8V Now
600MHz (1.6ns) H5PS5162FFR-16C FBGA (84ball) 4Bank, 2.0V / 2.0V Now
500MHz (2.0ns) H5PS5162FFR-20C FBGA (84ball) 4Bank, 2.0V / 2.0V Now
500MHz (2.0ns) H5PS5162FFR-20L FBGA (84ball) 4Bank, 1.8V / 1.8V Now
400MHz (2.5ns) H5PS5162FFR-25C FBGA (84ball) 4Bank, 1.8V / 1.8V Now
512Mb 32M×16 500MHz (2.0ns) HY5PS121621CFP-2 FBGA (84ball) 4Bank, 2.0V / 2.0V Now
450Mhz (2.2ns) HY5PS121621CFP-22 FBGA (84ball) 4Bank, 2.0V / 2.0V Now
400MHz (2.5ns) HY5PS121621CFP-25 FBGA (84ball) 4Bank, 1.8V / 1.8V Now
350Mhz (2.8ns) HY5PS121621CFP-28 FBGA (84ball) 4Bank, 1.8V / 1.8V Now
300Mhz (3.3ns) HY5PS121621CFP-33 FBGA (84ball) 4Bank, 1.8V / 1.8V Now
600MHz (1.6ns) HY5PS561621BFP-16 FBGA (84ball) 4Bank, 2.0V / 2.0V Now
500MHz (2.0ns) HY5PS561621BFP-2 FBGA (84ball) 4Bank, 2.0V / 2.0V Now
256Mb 16M×16 500MHz (2.0ns) HY5PS561621BFP-2L FBGA (84ball) 4Bank, 1.8V / 1.8V Now
450MHz (2.2ns) HY5PS561621BFP-22 FBGA (84ball) 4Bank, 1.8V / 1.8V Now
400MHz (2.5ns) HY5PS561621BFP-25 FBGA (84ball) 4Bank, 1.8V / 1.8V Now
350MHz (2.8ns) HY5PS561621BFP-28 FBGA (84ball) 4Bank, 1.8V / 1.8V Now
DENSITY ORG. SPEED PART NUMBER PKG. FEATURE AVAIL.
GRAPHICS GDDR3 SDRAM
1,300MHz (0.77ns) H5RS1H23MFR-N3C FBGA (136ball) 8banks, 1.9V / 1.9V Now
1,200MHz (0.8ns) H5RS1H23MFR-N2C FBGA (136ball) 8banks, 1.9V / 1.9V Now
1Gb 32M×32 1,000MHz (1.0ns) H5RS1H23MFR-N0C FBGA (136ball) 8banks, 1.9V / 1.9V Now
900MHz (1.1ns) H5RS1H23MFR-11C FBGA (136ball) 8banks, 1.8V /1 .8V Now
700MHz (1.4ns) H5RS1H23MFR-14C FBGA (136ball) 8banks, 1.8V / 1.8V Now
1,300MHz (0.77ns) H5RS5223CFR-N3C FBGA (136ball) 8Bank, 2.05V / 2.05V Now
1,200MHz (0.8ns) H5RS5223CFR-N2C FBGA (136ball) 8Bank, 2.05V / 2.05V Now
1,000MHz (1.0ns) H5RS5223CFR-N0C FBGA (136ball) 8Bank, 2.05V / 2.05V Now
512Mb 16M×32 900MHz (1.1ns) H5RS5223CFR-11C FBGA (136ball) 8Bank, 1.8V / 1.8V Now
700MHz (1.4ns) H5RS5223CFR-14C FBGA (136ball) 8Bank, 1.8V / 1.8V Now
500MHz (2.0ns) H5RS5223CFR-20C FBGA (136ball) 8Bank, 1.8V / 1.8V Now
700MHz (1.4ns) H5RS5223CFR-14L FBGA (136ball) 8Bank, 1.5V / 1.5V Now
550MHz (1.8ns) H5RS5223CFR-18C FBGA (136ball) 8Bank, 1.5V / 1.5V Now
DENSITY ORG. SPEED PART NUMBER PKG. FEATURE AVAIL.
GRAPHICS GDDR5 SDRAM
6.0Gbps H5GQ1H24AFR-R0C FBGA (170ball) 16Bank, TBD Q2 '09
5.5Gbps H5GQ1H24AFR-T3C FBGA (170ball) 16Bank, 1.5V / 1.5V Q2 '09
5.0Gbps H5GQ1H24AFR-T2C FBGA (170ball) 16Bank, 1.5V / 1.5V Q2 '09
4.5Gbps H5GQ1H24AFR-T1C FBGA (170ball) 16Bank, 1.5V / 1.5V Q2 '09
1Gb 32M×32 4.0Gbps H5GQ1H24AFR-T0C FBGA (170ball) 16Bank, 1.5V / 1.5V Q2 '09
4.5Gbps H5GQ1H24MJ(F)R-T1C FBGA (170ball) 16Bank, 1.5V / 1.5V Now
4.0Gbps H5GQ1H24MJ(F)R-T0C FBGA (170ball) 16Bank, 1.5V / 1.5V Now
3.6Gbps H5GQ1H24MJ(F)R-N8C FBGA (170ball) 16Bank, 1.5V / 1.5V Now
3.2Gbps H5GQ1H24MJ(F)R-N6C FBGA (170ball) 16Bank, 1.5V / 1.5V Now
4.5Gbps H5GQ5223MFR-T1C FBGA (170ball) 8Bank, 1.5V / 1.5V Now
512Mb 16M×32 4.0Gbps H5GQ5223MFR-T0C FBGA (170ball) 8Bank, 1.5V / 1.5V Now
3.6Gbps H5GQ5223MFR-N8C FBGA (170ball) 8Bank, 1.5V / 1.5V Now
3.2Gbps H5GQ5223MFR-N6C FBGA (170ball) 8Bank, 1.5V / 1.5V Now
DENSITY ORG. SPEED PART NUMBER PKG. FEATURE AVAIL.
GRAPHICS DDR3 SDRAM
900MHz (1.1ns) H5TS1G63BFR-11C FBGA (96ball) 8Bank, 1.8V / 1.8V Now
800MHz (1.2ns) H5TS1G63BFR-12C FBGA (96ball) 8Bank, 1.8V / 1.8V Now
800MHz (1.2ns) H5TQ1G63BFR-12C FBGA (96ball) 8Bank, 1.5V / 1.5V Now
700Mhz (1.4ns) H5TQ1G63BFR-14C FBGA (96ball) 8Bank, 1.5V / 1.5V Now
1Gb 64M×16 800MHz (1.2ns) H5TS1G63AFR-12C FBGA (96ball) 8Bank, 1.8V / 1.8V Now
700Mhz (1.4ns) H5TS1G63AFR-14C FBGA (96ball) 8Bank, 1.8V / 1.8V Now
600MHz (1.6ns) H5TS1G63AFR-16C FBGA (96ball) 8Bank, 1.8V / 1.8V Now
700MHz(1.4ns) H5TQ1G63AFR-14C FBGA (96ball) 8Bank, 1.5V / 1.5V Now
600MHz (1.6ns) H5TQ1G63AFR-16C FBGA (96ball) 8Bank, 1.5V / 1.5V Now
500MHz (2.0ns) H5TQ1G63AFR-20C FBGA (96ball) 8Bank, 1.5V / 1.5V Now
1,000MHz (1.0ns) H5TS5163MFR-N0C FBGA (96ball) 4Bank, 1.8V / 1.8V Now
900MHz (1.1ns) H5TS5163MFR-11C FBGA (96ball) 4Bank, 1.8V / 1.8V Now
800MHz (1.2ns) H5TS5163MFR-12C FBGA (96ball) 4Bank, 1.8V / 1.8V Now
512Mb 32M×16 700Mhz (1.4ns) H5TS5163MFR-14C FBGA (96ball) 4Bank, 1.8V / 1.8V Now
800MHz (1.2ns) H5TQ5163MFR-12C FBGA (96ball) 4Bank, 1.5V / 1.5V Now
700Mhz (1.4ns) H5TQ5163MFR-14C FBGA (96ball) 4Bank, 1.5V / 1.5V Now
600MHz (1.6ns) H5TQ5163MFR-16C FBGA (96ball) 4Bank, 1.5V / 1.5V Now
500MHz (2.0ns) H5TQ5163MFR-20C FBGA (96ball) 4Bank, 1.5V / 1.5V Now
DENSITY ORG. SPEED PART NUMBER PKG. FEATURE AVAIL.
The information in this product brochure is subject to change. Up to date information on
our products and technologies may be obtained from our website. www.hynix.com
General Description
We now live in the Digital Era. Digital televisions, DVD and Set-Top
Box give us rich entertainment, while Car navigation systems provide
comfort and convenience. All of these digital consumer appliances
need semiconductor memory for performance improvement, power
savings and size reduction.
Hynix has full line-up of DRAM (Dynamic RAM) to meet the
needs of a wide range of consumer applications. Hynix offers a
family of SDRAM (Synchronous DRAM) in 64Mb~256Mb
densities, packaged in TSOP-II & FBGA offered at industrial
range temperature range of -40°C to 85°C and featuring very low
power consumption. DDR & DDR2 SDRAMs (Double Data Rate
SDRAMs) are available for high-end consumer applications
requiring higher data transfer rates. In many applications, such
as Digital Television and Set-Top-Box, SDRAM has been
replaced by DDR & DDR2 SDRAM technologies.
Sometimes, the most important things may not be visible
Although hidden from view, Hynix Consumer Memories have
been used in a variety of applications offered by a number of
companies to realize a multitude of miracles.
Consumer DRAM Usage Map
Consumer DRAM Readiness
Consumer
Memory
10 Hynix Semiconductor Inc.
Good things come
in small packages!
SDR SDRAM
x16 HY57V641620FTP 5 / 6 / 7 / H Normal / Low TSOP 3.3V Now
x16 HY57V66FFP 5 / 6 / 7 / H Normal / Low FBGA 3.3V Now
64Mb x16 HY5V66FF6P 5 / 6 / 7 / H Normal Power FBGA 3.3V Now
x16 H57V6462GTR 50 / 60 / 75 / A3 Normal Power TSOP 3.3V Q3 '09
x16 H57V6462GFR 50 / 60 / 75 / A3 Normal Power FBGA 3.3V Q3 '09
x16 HY57V281620FTP 5 / 6 / 7 / H Normal / Low TSOP 3.3V Now
128Mb x16 HY5V26FFP 5 / 6 / 7 / H Normal / Low FBGA 3.3V Now
x16 H57V1262GTR 50 / 60 / 75 / A3 Normal Power TSOP 3.3V Q3 '09
x16 H57V1262GFR 50 / 60 / 75 / A3 Normal Power FBGA 3.3V Q3 '09
x8 HY57V56820FTP 6 / H Normal / Low TSOP 3.3V Now
x16 HY57V561620FTP 6 / H Normal / Low TSOP 3.3V Now
x16 HY5V56FFP 6 / H Normal / Low FBGA 3.3V Now
256Mb x32 HY5V52AFP 6 / H Normal / Low FBGA 3.3V Now
x8 H57V2582GTR 50 / 60 / 75 / A3 Normal Power TSOP 3.3V Q3 '09
x16 H57V2562GTR 50 / 60 / 75 / A3 Normal Power FBGA 3.3V Q3 '09
x16 H57V2562GFR 50 / 60 / 75 / A3 Normal Power FBGA 3.3V Q3 '09
DENSITY ORG. PART NUMBER SPEED POWER PKG. VOL. AVAIL.
DDR SDRAM
64Mb x16 H5DU6462CTR J / D43 / D5 Normal / Low TSOP 2.5V Now
x16 H5DU6462CFR J / D43 / D5 Normal / Low FBGA 2.5V Now
x16 HY5DU281622FTP 4 / 5 / D43 / D4 / J / H Normal / Low TSOP 2.5V Now
128Mb x16 H5DU1262GTR F4 / E3 / E4 / J3 / K2 / K3 Normal / Low TSOP 2.5V Q2 '09
x16 H5DU1262GFR F4 / E3 / E4 / J3 / K2 / K3 Normal / Low FBGA 2.5V Q2 '09
x8 HY5DU568822FTP 4 / D43 / J Normal / Low TSOP 2.5V Now
x16 HY5DU561622FTP 4 / D43 / J Normal / Low TSOP 2.5V Now
x16 HY5DU561622FFP 4 / D43 / J Normal / Low FBGA 2.5V Now
256Mb x8 H5DU2582GTR F4 / E3 / E4 / J3 / K2 / K3 Normal Power TSOP 2.5V Q3 '09
x16 H5DU2562GFR F4 / E3 / E4 / J3 / K2 / K3 Normal Power FBGA 2.5V Q3 '09
x8 H5DU2582GTR F4 / E3 / E4 / J3 / K2 / K3 Normal Power TSOP 2.5V Q3 '09
x16 H5DU2562GFR F4 / E3 / E4 / J3 / K2 / K3 Normal Power FBGA 2.5V Q3 '09
x8 HY5DU128822DTP D43 / J / K / H / L Normal Power TSOP 2.5V Now
x8 HY5DU12822DFP D43 / J / K / H / L Normal Power FBGA 2.5V Now
x16 HY5DU121622DTP D43 / J / K / H / L Normal Power TSOP 2.5V Now
512Mb x16 HY5DU121622DFP D43 / J / K / H / L Normal Power FBGA 2.5V Now
x8 H5DU5182ETR F4 / E3 / E4 / J3 / K2 / K3 Normal Power TSOP 2.5V Q4 '09
x8 H5DU5182EFR F4 / E3 / E4 / J3 / K2 / K3 Normal Power FBGA 2.5V Q4 '09
x16 H5DU5162ETR F4 / E3 / E4 / J3 / K2 / K3 Normal Power TSOP 2.5V Q4 '09
x16 H5DU5162EFR F4 / E3 / E4 / J3 / K2 / K3 Normal Power FBGA 2.5V Q4 '09
DENSITY ORG. PART NUMBER SPEED POWER PKG. VOL. AVAIL.
DDR2 SDRAM
256Mb x16 HY5P5561621BFP E3 / C4 / Y5 / S5 Normal / Low FBGA 1.8V Now
x16 HY5P5561621BFR E3 / C4 / Y5 / S5 Normal / Low FBGA 1.8V Now
x8 HY5PS12821CFP E3 / C4 / Y4 / Y5 / S5 Normal / Low FBGA 1.8V Now
512Mb x8 H5PS5182FFR E3 / C4 / Y4 / Y5 / S5 Normal / Low FBGA 1.8V Now
x16 HY5PS121621CFP E3 / C4 / Y4 / Y5 / S5 Normal / Low FBGA 1.8V Now
x16 H5PS5162FFR E3 / C4 / Y4 / Y5 / S5 / G7 Normal / Low FBGA 1.8V Now
x8 HY5PS1G831CFP E3 / C4 / Y5 / S5 Normal / Low FBGA 1.8V Now
1Gb x8 H5PS1G83EFR E3 / C4 / Y5 / S5 Normal / Low FBGA 1.8V Now
x16 HY5PS1G1631CFP E3 / C4 / Y5 / S5 Normal / Low FBGA 1.8V Now
x16 H5PS1G63EFR E3 / C4 / Y5 / S5 / G7 Normal / Low FBGA 1.8V Now
2Gb x16 H5PS2G63EMR Y5 / S5 Normal / Low FBGA 1.8V Q3 '09
DENSITY ORG. PART NUMBER SPEED POWER PKG. VOL. AVAIL.
Consumer Memory
Product Line-up
11Hynix Semiconductor Inc.
The information in this product brochure is subject to change. Up to date information on
our products and technologies may be obtained from our website. www.hynix.com
Mobile DRAM
Broad Product Line: SDR / DDR, x16 / x32 organizations, 128Mb to
2Gb densities
Diverse Packaging Options: Discrete, KGD (Known Good Die), MCP
(Multi Chip Package), PoP (Package on Package), Ci-MCP (Card
Interface MCP)
Small Form Factor Packages: For use in the most space-constrained
handheld applications
Low Power Features: Programmable Drive strength, Partial Array Self
Refresh, Auto Temperature Compensated Self Refresh mode
Major Applications: Mobile Phone, PDA, MP3 Player, Digital Still
Camera, MID(Mobile Internet Device), PND(Portable Navigation
Device), Personal Media Player (PMP), Handheld Game Console
MCP
Small Form Factor package saves space in Handheld Devices
High Capacity Data Storage, High Speed, with Low Power Consumption
In-house manufacturing provides cost efficient solutions in a timely manner
Major Application - Mobile Phone, Smartphone, PDA Phone, Digital Still
Camera, MID(Mobile Internet Device), Wireless LAN Card, Handheld
Game Console
MCP Line-up
e-NAND
e-NAND : Combination of NAND Flash and the Flash Controller with
MMC interface, in a single package
Simple read/write memory using standard MMC 4.2 protocol interface.
No additional firmware for NAND management required
Controller includes NAND software such as FTL, ECC, FAT-16/32
e-NAND Introduction & Concept
Mobile
Memory
12 Hynix Semiconductor Inc.
Enhanced Mobility
with Small Components!
General Description
Hynix Mobile Memory technology unleashes the best mobile experience on the go. As mobile devices get smaller, sleeker, and lighter than ever,
consumers will be able to choose from a wide range of mobile devices to keep them connected, entertained, informed, and productive.
As consumers’ life styles become more mobile, there is ever increasing demand for connectivity. Mobile devices will require high performance
memories, with very low power consumption for extended battery life.
Devices that use Hynix Mobile Memory enables everything you love on-the-go. Hynix Mobile Memory products offered in small footprint packages
have superior power saving features useful in all handheld devices such as cellular phones, PDAs, MP3 players, etc. Hynix Mobile Memories are
ideal for portable applications which require very low power consumption. Hynix’s Mobile Business Group offers a broad variety of products enabling
our customers to deliver next-generation devices in time to market.
MOBILE SDR
128M×16 H55S2G62MFR-60M 166MHz (6.0ns) 1.8V FBGA(54ball) / KGD Now
2G 64M×32 H55S2G22MFR-60M 166MHz (6.0ns) 1.8V FBGA(90ball) / KGD Now
64M×32 (reduced page) H55S2G32MFR-60M 166MHz (6.0ns) 1.8V FBGA(90ball) / KGD Now
64M×16 H55S1G62MFP-60M 166MHz (6.0ns) 1.8V FBGA(54ball) / KGD Now
1G 32M×32 H55S1G22MFP-60M 166MHz (6.0ns) 1.8V FBGA(90ball) / KGD Now
32M×32 (reduced page) H55S1G32MFP-60M 166MHz (6.0ns) 1.8V FBGA(90ball) / KGD Now
32M×16 HY5S7B6ALFP-6E 166MHz (6.0ns) 1.8V FBGA(54ball) / KGD Now
16M×32 HY5S7B2ALFP-6E 166MHz (6.0ns) 1.8V FBGA(90ball) / KGD Now
512Mb 32M×16 H55S5162DFR-60M 166MHz (6.0ns) 1.8V FBGA(54ball) / KGD Now
16M×32 H55S5122DFR-60M 166MHz (6.0ns) 1.8V FBGA(90ball) / KGD Now
16M×32 (reduced page) H55S5132DFR-60M 166MHz (6.0ns) 1.8V FBGA(90ball) / KGD Now
16M×16 HY5S5B6HLFP-6E 166MHz (6.0ns) 1.8V FBGA(54ball) / KGD Now
8M×32 HY5S5B2CLFP-6E 166MHz (6.0ns) 1.8V FBGA(90ball) / KGD Now
256Mb 16M×16 H55S2562JFR-60M 166MHz (6.0ns) 1.8V FBGA(54ball) / KGD Now
8M×32 H55S2622JFR-60M 166MHz (6.0ns) 1.8V FBGA(90ball) / KGD Now
8M×32 (reduced page) H55S2532JFR-60M 166MHz (6.0ns) 1.8V FBGA(90ball) / KGD Now
128Mb 8M×16 H55S1262EFP-60M 166MHz (6.0ns) 1.8V FBGA(54ball) / KGD Now
4M×32 H55S1222EFP-60M 166MHz (6.0ns) 1.8V FBGA(90ball) / KGD Now
DENSITY ORG. PART NUMBER SPEED VOL. PKG. AVAIL.
MOBILE DDR
128M×16 H5MS2G62MFR-J3M / E3M DDR333 / DDR400 1.8V FBGA(60ball) / KGD Now
2Gb 64M×32 H5MS2G22MFR-J3M / E3M DDR333 / DDR400 1.8V FBGA(90ball) / KGD Now
64M×32 (reduced page) H5MS2G32MFR-J3M / E3M DDR333 / DDR400 1.8V FBGA(90ball) / KGD Now
64M×16 H5MS1G62MFP-J3M / E3M DDR333 / DDR400 1.8V FBGA(60ball) / KGD Now
1Gb 32M×32 H5MS1G22MFP-J3M / E3M DDR333 / DDR400 1.8V FBGA(90ball) / KGD Now
32M×32 (reduced page) H5MS1G32MFP-J3M / E3M DDR333 / DDR400 1.8V FBGA(90ball) / KGD Now
32M×16 HY5MS7B6BLFP-6E DDR333 1.8V FBGA(60ball) / KGD Now
16M×32 HY5MS7B2BLFP-6E DDR333 1.8V FBGA(90ball) / KGD Now
512Mb 32M×16 H5MS5162DFR-J3M / E3M DDR333 / DDR400 1.8V FBGA(60ball) / KGD Now
16M×32 H5MS5122DFR-J3M / E3M DDR333 / DDR400 1.8V FBGA(90ball) / KGD Now
16M×32 (reduced page) H5MS5132DFR-J3M / E3M DDR333 / DDR400 1.8V FBGA(90ball) / KGD Now
16M×16 HY5MS5B6BLFP-6E DDR333 1.8V FBGA(60ball) / KGD Now
8M×32 HY5MS5B2ALFP-6E DDR333 1.8V FBGA(90ball) / KGD Now
256Mb 16M×16 H5MS2562JFR-J3M / E3M DDR333 / DDR400 1.8V FBGA(60ball) / KGD Now
8M×32 H5MS2622JFR-J3M / E3M DDR333 / DDR400 1.8V FBGA(90ball) / KGD Now
8M×32 (reduced page) H5MS2532JFR-J3M / E3M DDR333 / DDR400 1.8V FBGA(90ball) / KGD Now
128Mb 8M×16 H5MS1262EFP-J3M / E3M DDR333 / DDR400 1.8V FBGA(60ball) / KGD Now
4M×32 H5MS1222EFP-J3M / E3M DDR333 / DDR400 1.8V FBGA(90ball) / KGD Now
DENSITY ORG. PART NUMBER SPEED VOL. PKG. AVAIL.
Mobile Memory
Product Line-up
13Hynix Semiconductor Inc.
The information in this product brochure is subject to change. Up to date information on
our products and technologies may be obtained from our website. www.hynix.com
General Description
Hynix provides a broad range of NAND Flash products density from 128Mb to 256Gb with various types of packaging. (TSOP, ULGA and FBGA)
Due to the proliferation of digital content, NAND Flash memory products are used in a wide variety of applications such as MP3, PMP, Digital camera,
Camcorder, Memory card, USB flash drive and other consumer electronics such as Game console, Navigation. Currently, Hynix NAND Flash Memory is
being widely adopted in the mobile handset application and we are also developing PC storage solutions based on the NAND Flash chips. To meet the
growing demand for high capacity and improved performance in mobile applications, Hynix is offering HiFFS(Flash File System) software with eHiFFS
system that enhances NAND chip performance and reliability.
NAND Flash
Memory
NAND Flash Key Features
Product 48nm 16Gb MLC 41nm 32Gb MLC 3xnm 32Gb MLC
Voltage 3.3V 3.3V 3.3V
Organization ×8×8×8
Page & Block size (byte) 4KB + 128B / 512KB 4KB + 224B / 512KB 8KB + 436B / 1MB
tRC (min.) / tWC (min.) 25ns 25ns 25ns 30ns
tR (max) 60us 60us 400us(max)
Program time (typ) < 800us 1000us(TBD) 1600us(TBD)
Erase time (typ) 2.5ms 2.5ms 1.5ms
Operating Current (ICC) MONO / DDP 15(typ.) ~ 30mA(max) 20(typ.) ~ 40mA(max) 30(typ.) ~ 50mA(max)
QDP / DSP 20(typ.) ~ 40mA(max) 20(typ.) ~ 40mA(max)(TBD) 30(typ.) ~ 50mA(max)
Copy-back O with Data out O with Data out O with Data out
Function Cache program - OO
Cache Read - OO
2 plane Op. Write, Read & Erase Write, Read & Erase Write, Read & Erase
Extended Data Out O O O
Special Function OTP O O O
Unique ID O O O
NAND Flash Application
14 Hynix Semiconductor Inc.
Endurance / PKG
E/W Cycles / Retention 5K / 10years 5K / 10years TBD
NOP 1 1 TBD
PKG TSOP / ULGA / DSP VLGA VLGA(TBD)
HiFFS Software
eHiFFS Software
The management of data on NAND Flash
memory is complicated due to limitations of
NAND Flash memory.
One of the most important limitations of NAND
Flash memory is the inability to rewrite data
without block erase.
HiFFS Software solution is required to
compensate for erase cycle limitations.
Additionally, it extends the life of Hynix NAND
Flash with wear-leveling algorithms.
eHiFFS is the software solution for mobile
embedded systems. It is an essential system
software for consumer applications including
Smart phones, PDAs, MP3 player, PMPs,
Digital TVs and Digital Camcoders.
eHiFFS software supports partition manager, logical to physical mapping,
wear-leveling, bad block management and prevents read disturbance.
High Performance / High Reliability / Ease of Portability
Host Interface
- Supports various host interfaces
( ONFI BA, LBA, eMMC etc...)
- Option for additional features
Robust Flash Management with Hynix proprietary Software (eHiFFS)
High performance interface optimized for Hynix NAND Flash
■Software Support
15Hynix Semiconductor Inc.
NAND Flash Storage
for Fun and Excitement!
NAND Flash
Product Line-up
16 Hynix Semiconductor Inc.
The information in this product brochure is subject to change. Up to date information on
our products and technologies may be obtained from our website. www.hynix.com
SLC
PRODUCT TECH CELL DENSITY BLOCK SIZE STACK VCC/ORG PACKAGE AVAILABILITY REMARK
HY27US08281A 90nm 128Mb 16KB Mono 3.3V / x8 TSOP / USOP NOW EOL DEC ‘10
HY27US08561A 90nm 256Mb 16KB Mono 3.3V / x8 TSOP / USOP / FBGA NOW EOL DEC ‘10
HY27US08121B 70nm 512Mb 16KB Mono 3.3V / x8 TSOP / USOP / FBGA NOW EOL DEC ‘09
H27U518S2C 57nm 512Mb 16KB Mono 3.3V / x8 TSOP Dec ‘08 EOL DEC ‘10
HY27US081G1M 70nm 1Gb 16KB Mono 3.3V / x8 USOP NOW EOL DEC ‘09
HY27US081G1A 57nm 1Gb 16KB Mono 3.3V / x8 TSOP NOW EOL DEC ‘10
HY27UF081G2A 70nm 1Gb 128KB Mono 3.3V / x8 TSOP / USOP / FBGA NOW EOL DEC ‘09
HY27US081G2A 70nm 1Gb 128KB Mono 1.8V / x8 FBGA NOW EOL DEC ‘09
H27U1G8F2B 48nm 1Gb 128KB Mono 3.3V / x8 TSOP Dec ‘08 EOL DEC ‘11
HY27UF082G2B 57nm 2Gb 128KB Mono 3.3V / x8 TSOP / FBGA NOW EOL Jun ‘10
HY27UF084G2B 57nm 4Gb 128KB Mono 3.3V / x8 TSOP NOW EOL Jun ‘10
HY27UG088G5(D)B 57nm 8Gb 128KB DDP 3.3V / x8 TSOP / LGA NOW 2CE / Dual CH.
HY27UH08AG5B 57nm 16Gb 128KB QDP 3.3V / x8 TSOP NOW 2CE
H27UAG8F2M 41nm 16Gb 256KB (4KB Page) Mono 3.3V / x8 ULGA May ‘09
H27UBG8G2M 41nm 32Gb 256KB (4KB Page) DDP 3.3V / x8 ULGA Jun ‘09 2CE
H27UCG8H2M 41nm 64Gb 256KB (4KB Page) QDP 3.3V / x8 ULGA Jun ‘09 2CE
SLC
MLC / TLC
PRODUCT TECH CELL DENSITY BLOCK SIZE STACK VCC/ORG PACKAGE AVAILABILITY REMARK
HY27UT084G2A 57nm 4Gb 256KB Mono 3.3V / x8 TSOP NOW
HY27UT088G2A 57nm 8Gb 256KB Mono 3.3V / x8 TSOP NOW
H27U8G8T2B 48nm 8Gb 512KB Mono 3.3V / x8 TSOP NOW
HY27UU08AG5A 57nm 16Gb 256KB DDP 3.3V / x8 TSOP NOW 2CE
H27UAG8T2M 48nm 16Gb 512KB (4KB Page) Mono 3.3V / x8 TSOP / VLGA NOW
H27UAG8T2A 41nm 16Gb 512KB (4KB Page) Mono 3.3V / x8 TSOP / ULGA Apr ’ 09
HY27UV08BG5A 57nm 32Gb 256KB QDP 3.3V / x8 TSOP NOW 2CE
H27UBG8U5M 48nm 32Gb 512KB (4KB Page) DDP 3.3V / x8 TSOP NOW 2CE
H27UBG8T2M 41nm 32Gb 512KB (4KB Page) Mono 3.3V / x8 VLGA NOW
HY27UW08CGFA 57nm 64Gb 256KB DSP 3.3V / x8 TSOP DSP NOW 4CE
H27UCG8V5M 48nm 64Gb 512KB (4KB Page) QDP 3.3V / x8 TSOP / VLGA NOW 2CE
H27UCG8UDM 41nm 64Gb 512KB (4KB Page) DDP 3.3V / x8 VLGA Now Dual CH.
H27UDG8WFM 48nm 128Gb 512KB (4KB Page) ODP 3.3V / x8 LSOP NOW 4CE
H27UDG8WFMTR-BC 48nm 128Gb 512KB (4KB Page) DSP 3.3V / x8 TSOP DSP NOW 4CE
H27UDG8YFMXR-BC 48nm 128Gb 512KB (4KB Page) ODP 3.3V / x8 LLGA NOW 4CE
H27UDG8VEM 41nm 128Gb 512KB (4KB Page) QDP 3.3V / x8 VLGA Now 4CE, Dual CH.
H27UEG8YEM 41nm 256Gb 512KB (4KB Page) ODP 3.3V / x8 LLGA Apr ’ 09 4CE, Dual CH.
H2EUCG8N11YR-C 48nm 64Gb 768KB (192 Block) DDP 3.3V / x8 VLGA Mar ’ 09 Emulated NAND
H2EUDG8P11XR-C 48nm 128Gb 768KB (192 Block) QDP 3.3V / x8 LLGA Mar ’ 09 Emulated NAND
H27UCG8H2M 41nm 64Gb 256KB (4KB Page) QDP 3.3V / x8 ULGA Jun ‘09 2CE
MLC
TLC
uSD
PRODUCT DENSITY SPEC. uSD CLASS AVAILABILITY EOL
H24U51TM2ARH 57nm 4Gb Mono SD2.0 Class-2 Aug ’09 Aug ’09
H24U51TM3BRH 48nm 4Gb Mono SD2.0 Class-4 TBD TBD
H24U1GTM1MRQ 57nm 8Gb Mono SD2.0 Class-2 Jun ’09 Jun ’09
H24U1GTM3ARH 48nm 8Gb Mono SD2.0 Class-4 TBD TBD
H24U2GUM1MRQ 57nm 8Gb DDP SD2.0 Class-2 Jun ’09 Jun ’09
H24U2GUM3ARH 48nm 8Gb DDP SD2.0 Class-6 TBD TBD
H24U2GTM3BRH 41nm 16Gb Mono SD2.0 Class-6 (TBD) TBD TBD
H24U4GVM3MRH 48nm 8Gb QDP SD2.0 Class-6 TBD TBD
H24U4GUM3ARH 41nm 16Gb DDP SD2.0 Class-6 (TBD) TBD TBD
H24U8GVM3MRH 8GB 41nm 16Gb QDP SD2.0 Class-6 (TBD) TBD TBD
H24YAGVM3MRH 16GB 41nm 16Gb ODP SD2.0 Class-6 (TBD) TBD TBD
512MB
1GB
2GB
4GB
TECH. DENSITY STACK
NAND COMPONENT
e-NAND
PRODUCT DENSITY SPEC. AVAILABILITY
H26M01002MAR 512MB 57nm 4Gb Mono MMC4.2 NOW
H26M11002MAR 1GB 60nm 8Gb Mono MMC4.2 NOW
H26M11002AAR 1GB 57nm 8Gb Mono MMC4.2 NOW
H26M11001BAR 1GB 48nm 8Gb Mono MMC4.3 Q2
H26M22002AAR 2GB 57nm 8Gb DDP MMC4.2 NOW
H26M21002BAR 2GB 48nm 16Gb Mono MMC4.2 Q2
H26M21001CAR 2GB 41nm 16Gb Mono MMC4.3 End of Q2
H26M34002MAR 4GB 60nm 8Gb QDP MMC4.2 NOW
H26M34002AAR 4GB 57nm 8Gb QDP MMC4.2 NOW
H26M32002BAR 4GB 48nm 16Gb DDP MMC4.2 Q2
H26M32001CAR 4GB 41nm 16Gb DDP MMC4.3 Q2
H26M48002MAR 8GB 57nm 8Gb ODP MMC4.2 NOW
H26M44002AAR 8GB 48nm 16Gb QDP MMC4.2 Q2.
H26M42001BAR 8GB 41nm 32Gb DDP MMC4.3 End of Q2
H26M54001AJR 16GB 41nm 32Gb QDP MMC4.3 End of Q2
H26M68001MJR 32GB 41nm 32Gb ODP MMC4.3 End of Q2
TECH. DENSITY STACK
NAND COMPONENT
General Description
Hynix entered the CMOS Image Sensor business in 2007, to continue with
its long term growth strategy. Through close cooperation with industry-
leading business partners and with its expertise in the memory business,
Hynix successfully introduced competitive and cost effective image sensors
in the following year. Hynix aims to diversify its product portfolio by
developing a wide range of higher resolution application-specific products
to meet market demand.
CIS
(CMOS Image Sensor)
Applications
CMOS Image Sensor
CMOS Image Sensor is a device that converts an optical image to an electrical signal using a CMOS manufacturing technology. CMOS technology
allows the integration of the image sensor and digital signal processor on the same chip, resulting in faster, smaller, cost effective and lower power
image sensing devices.
CMOS Image Sensor market has high growth potential, with demand expected to rise by 10 percent annually through 2011. Its main applications are
camera phones, digital still cameras, and video conferencing systems, but the market for CMOS Image Sensor is rapidly diversifying into various
applications including surveillance systems, automotive cameras, and medical system.
Camera Attachment Ratio
of Mobile Phones
Hynix CMOS Image Sensor
Pixel Technology Migration
Camera Phone Resolution Trend (Main Camera)
17Hynix Semiconductor Inc.
Hynix CMOS Image Sensor
Hynix is now offering CMOS Image Sensors for various consumer applications, delivering outstanding performance and providing innovative and
cost-effective solutions. Hynix is continuously enhancing its technological excellence accelerating technology development to provide quality
products and meet customers needs.
Experience Clear and
Vivid Images with
Hynix CMOS Image Sensors
18 Hynix Semiconductor Inc.
CMOS Image Sensor Product Lineup and Key Features
Pixel Size 2.25um×2.25um
Array Format (Active) 640H×480V
Optical Format 1/10-inch
Imaging Area 1.44mm×1.08mm
Color Filter Array RGB Bayer color filters
Scan Mode Progressive
Frame Rate 30-fps @ 24MHz
Shutter Electronic rolling Shutter (ERS)
Automatic Function Exposure, white balance, black level
calibration, anti-flicker, color saturation,
defect correction, aperture correction
Window size Programmable (including VGA, QVGA,
CIF, QCIF)
Flash Support Xenon and LED
Sensitivity 0.750V / LuxSec
SNR 35dB
Dynamic Range 60dB
ADC on-chip, 10-bit
Data Rate 12 megapixels per second
(master clock, 24MHz)
Programmable Exposure, white balance, blanking, vertical
blanking, color, sharpness, gamma
correction, lens shading correction,
X-Y image flip, zoom, windowing
Supply Voltage Digital I/O: 1.7V ~ 3.0V
Digital Core: 1.7V ~ 1.9V
Analog & Pixel: 2.6V ~ 3.0V
Power Consumption 100mW (Typical)
Operating Temp. Range -20℃to 70℃
VGA (YACBAA0S)
Sensitivity TBD
SNR 32dB (est.)
ADC on-chip, 10-bit
Data Rate 36 megapixels per second
(Internal PLL clock = 72MHz)
Programmable Exposure, white balance, blanking, vertical
blanking, color, sharpness, gamma
correction, lens shading correction,
X-Y image flip, zoom, windowing
Supply Voltage Digital I/O: 1.7V ~ 3.0V
Digital Core: 1.7V ~ 1.9V
Analog & Pixel: 2.6V ~ 3.0V
Power Consumption TBD
Operating Temp. Range -20℃to 70℃
2M (YACD5B1S)
Pixel Size 1.75um×1.75um
Optical Format 1/4-inch
Array Format (Active) 2048H×1356V
Imaging Area TBD
Color Filter Array RGB Bayer color filters
Scan Mode Progressive
Flash Support Xenon and LED
Automatic Function Exposure, white balance, black level
calibration, anti-flicker, color saturation,
defect correction, aperture correction,
Anti-Shaking, Auto Focus Control
Window size Programmable
Sub-Sampling 1/2, 1/4
Sensitivity 0.475V / lux-sec @ 550nm (est.)
SNR 32dB (est.)
ADC On-chip, 10-bit
Programmable Exposure, white balance, blanking, vertical
blanking, color, sharpness, gamma correction,
lens shading correction, X-Y image flip, zoom,
windowing
Frame Rate 15-fps @ QXGA / 30-fps @ XGA
Shutter Electronic rolling Shutter (ERS)
Supply Voltage Digital I/O: 1.7V ~ 3.0V
Digital Core: 1.7V ~ 1.9V
Analog & Pixel: 2.6V ~ 3.0V
Power 80mW (Active)
Consumption 7μA (Standby)
Operating Temp. Range -20℃to 60℃
3M (YACE4A1S)
Pixel Size 1.75um×1.75um
Optical Format 1/3.2 inch
Array Format (Active) 2624H×1984V
Imaging Area 4.59mm×3.47mm
Color Filter Array RGB Bayer color filters
Flash Support Xenon and LED
Scan Mode Progressive
Frame Rate 15-fps @ QSXGA (Full Resolution)
Sub Sampling -
Operating Temp. Range -10℃to 70℃
Data Interface Format Bayer (10-bit), MIPI
Sensitivity TBD
SNR TBD
ADC On-chip, 10-bit
Dynamic Range TBD
Feature DPC, Programmable BLC, LCS, Analog / Digital
Gain Control, X-Y Flip, Windowing, Sub-sampling,
Scaling, Slew Rate control, Exposure Control,
Xenon / LED Support
Shutter Electronic rolling Shutter (ERS)
With Global Reset Release
Supply Voltage Digital I/O: 1.6V ~ 3.1V
Digital Core: 1.8V ±10%
Analog & Pixel: 2.6V ~ 3.1V
Power Consumption <350mW
Serial Interface Yes
5M (YACF3A1C)
Pixel Size 1.75um×1.75um
Optical Format 1/5-inch
Array Format (Active) 1600H×1200V
Imaging Area 2.80mm×2.10mm
Color Filter Array RGB Bayer color filters
Scan Mode Progressive
Frame Rate Max 15-fps @ full resolution
Shutter Electronic rolling Shutter (ERS)
Automatic Function Exposure, white balance, black level
calibration, anti-flicker, color saturation,
defect correction, aperture correction
Window size Programmable (including UXGA, SVGA,
QSVGA)
Flash Support Xenon and LED
CIS(CMOS Image Sensor)
Product Line-up
Global Sales
Network
HEADQUARTERS & FACTORY
■HYNIX SEMICONDUCTOR INC. (H.S.I)
HEADQUARTERS & FACTORY
San 136-1, Ami-Ri, Bubal-Eub, Icheon-si,
Kyoungki-Do, Korea 467-701
Tel: 82-31-630-4114 Fax: 82-31-630-4103
MARKETING & SALES DIVISION
891 Daechi-dong, Kangnam-gu, Seoul,
135-738, Korea
Tel: 82-2-3459-5114 Fax: 82-2-3459-5987/8
CHEONGJU FACTORY
1, Hyangjeong-dong, Hungduk-gu, Cheongju-si,
Chungbuk, 361-725, Korea
Tel: 82-43-270-3114 Fax: 82-43-270-2145
AMERICA
■HYNIX SEMICONDUCTOR AMERICA INC. (H.S.A)
3101 North First Street, San Jose, CA 95134, U.S.A
Tel: 1-408-232-8000 Fax: 1-408-232-8103
ATLANTA OFFICE
907 Santa Anita Drive Woodstock, GA 30189, U.S.A
Tel: 1-678-445-7768 Fax: 1-678-445-8120
AUSTIN OFFICE
4201 West Parmer Lane Bldg. B, Suite 280 Austin,
TX 78727, U.S.A
Tel: 1-512-339-8166 Fax: 1-512-821-3730
CHICAGO OFFICE
1920 North Thoreau Drive Suite 170 Schaumburg,
IL 60173 U.S.A
Tel: 1- 847-925-0190 Fax: 1-847-925-0196
DALLAS OFFICE
1701 Gateway Blvd, Suite 375 Richardson,
TX 75080, U.S.A
Tel: 1-972-690-4969 Fax: 1-972-690-1065
HOUSTON OFFICE
13455 Cutten Rd Suite 1-I Houston, TX 77069, U.S.A
Tel: 1-281-444-4908 Fax: 1-281-444-4918
NEW YORK OFFICE
10 Lafayette Court, Suite 10A Fishkill, NY 12524, U.S.A
Tel: 1-845-896-0353 Fax: 1-845-896-0577
RALEIGH OFFICE
5511 Capital Center Drive, Suite 330, Raleigh,
NC 27606, U.S.A
Tel: 1-919-859-1244 Fax: 1-919-859-3137
EUROPE
■
HYNIX SEMICONDUCTOR DEUTSCHLAND GMBH. (H.S.D)
Am Prime Parc 13 Kelsterbacher Str. 16 D-65479
Raunheim Germany
Tel: 49-6142-921-100 / 206
Fax: 49-6142-921-290 / 214
MILANO OFFICE
Via A. Volta 54 20090 CUSAGO (M), Milano, Italy
Tel: 39-2-9019-137 Fax: 39-2-9039-0711
MOSCOW OFFICE
123242, Moscow, Krasnaya Presnya str., 13, 5th fl,
room 33, Russia
Tel: 7-495-104-52-84 Fax: 7-495-104-52-84
PARIS OFFICE
Bureaux de Sevres-2 rue Troyon 92316 SEVRES Cedex,
Paris, France
Tel: 33-141-14-83-41 Fax: 33-141-14-83-40
STOCKHOLM OFFICE
Flygfaltsgaten 1, SE-12830 Skarpnack,
Stockholm, Sweden
Tel: 46-8-605-7290 Fax: 46-8-605-2640
HELSINKI OFFICE
Technopolis, Innopoli 2 Tekniikkatie 14 02150 Espoo,
Finland
Tel: 358 (0)46 712 1081 Fax: 358 (0)46 712 1080
■HYNIX SEMICONDUCTOR U.K. LTD. (H.S.U)
241 Brooklands Road, Weybridge, Surrey KT13 0RH, U.K.
Tel: 44-1932-827-700 Fax: 44-1932-827-745~7
LIMERICK OFFICE
3rd Floor, Ivernia Hall, 97 Henry Street Limerick, Ireland
Tel: 353-61-400-755 Fax: 353-61-400-757
STIRLING OFFICE
Office 2/1 Springfield House Laurel Hill Business Park,
Laurel Hill Stirling, FK 7 9JQ, Scotland, U.K
Tel: 44-1932-827-750 Fax: 44-1932-827-759
ASIA
■HYNIX NUMONYX SEMICONDUCTOR LTD. (H.N.S.L)
Lot K7, Wuxi Export Processing Zone in Wuxi New
District, Wuxi, Jiangsu Province, China
Tel: 86-510-8520-8888
Fax: 86-510-8520-8181 / 8282
■HYNIX SEMICONDUCTOR JAPAN INC. (H.S.J)
23F SHIROYAMA TRUST TOWER, 4-3-1 Toranomon,
Minatoku, Tokyo, Japan
Tel: 81-3-6403-5500 Fax: 81-3-6403-5590 / 5591
OSAKA OFFICE
8th Fl., Sumitomo Seimei Shin-Osaka Higashiguchi
Bldg., 1-19-4 Higashinakajima, Higashiyodogawa-Ku
Osaka 533-0033, Japan
Tel: 81-6-4809-8851 Fax: 81-6-4809-8966
■
HYNIX SEMICONDUCTOR HONG KONG LTD. (H.S.H)
Suite 2401, 24F., Central Plaza, 18 Harbour Road
Wanchai, Hong Kong
Tel: 852-2971-1600 Fax: 852-2971-1622
■
HYNIX SEMICONDUCTOR ASIA PTE. LTD. (H.S.S)
7 Temasek Boulevard, #42-02, Suntec City Tower 1,
Singapore 038987
Tel: 65-6338-5966 Fax: 65-6336-5911 / 5922
PENANG OFFICE
Unit 17 lower level 5, Hotel Equatorial Penang 1 Jalan
Bukit Jambul Bayan Lepas 11900 Penang, Malaysia
Tel: 60-04-643-2428 Fax: 60-04-643-2432
■
HYNIX SEMICONDUCTOR INDIAN SUBCONTINENT PVT LTD. (H.S.I.S)
BANGALORE OFFICE
Unit 10, Level 8, Innovator Building, ITPB(International
Technology Park Bangalore), Whitefield Road,
Bangalore 560066, India
Tel: 91-80-4126-5271~2 Fax: 91-80-4126-5274
■
HYNIX SEMICONDUCTOR TAIWAN INC. (H.S.T)
11F, 392, Ruey Kuang Road, Neihu, Taipei 114,
Taiwan, R.O.C
Tel: 886-2-8752-2300
■
HYNIX SEMICONDUCTOR (Shanghai) CO., LTD. (H.S.C.S)
Room 2702-2705, Maxdo Center, No.8, Xing Yi RD,
Changning Zone, Shanghai, China
Tel: 86-21-5208-0505 Fax: 86-21-5208-0802
BEIJING OFFICE
Room1401 Landmark Building, 8 North Dongsanhuan
Road, Chaoyang District, Beijing 100004, China
Tel: 86-10-6590-6546 Fax: 86-10-6590-0908
SHENZHEN OFFICE
Fuchun East Building 1906~1909, ShenNan Road
#7006, Futian District, Shenzhen, China
Tel: 86-755-8257-1591 Fax: 86-755-8257-1584 / 1569
