1SV322
2014-03-01
1
TOSHIBA Diode Silicon Epitaxial Planar Type
1SV322
TCXO/VCO
• High capacitance ratio: C1V / C4V = 4.3 (typ.)
• Low series resistance: rs = 0.4 Ω (typ.)
• Useful for small size tuner.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Reverse voltage VR 10 V
Junction temperature Tj 125 °C
Storage temperature range Tstg −55 to 125 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Reverse voltage VR IR = 1 μA 10 ⎯ ⎯ V
Reverse current IR V
R = 10 V ⎯ ⎯ 3 nA
Capacitance C1V V
R = 1 V, f = 1 MHz 26.5 ⎯ 29.5 pF
Capacitance C4V V
R = 4 V, f = 1 MHz 6.0 ⎯ 7.1 pF
Capacitance ratio C1V / C4V ⎯ 4.0 4.3 ⎯ ⎯
Series resistance rs V
R = 4 V, f = 100 MHz ⎯ 0.4 0.8 Ω
Note: Signal level when capacitance is measured: Vsig = 500 mVrms
Marking
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 1-1E1A
Weight: 0.004 g (typ.)
Start of commercial production
1999-03
1SV322
2014-03-01
2
1SV322
2014-03-01
3
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