RDA5870P SINGLE CHIP FOR BLUETOOTH & FM RADIO TUNER RDA5870P integrates industry-lead Bluetooth and FM radio tuner into one chip and is optimized for NC 35 NC 36 FM_OUTL 37 NC FM_OUTR 38 GPIO2 39 NC HOST_WAKE 40 34 33 32 31 UART_TX 1 30 FM_IP UART_RX 2 29 GND 28 FM_IN PCM_DOUT 3 mobile applications. Bluetooth and FM can work simultaneously and independently, with low power I2C_SCL 1 General Description I2C_SDA Rev.1.0-03.2011 GND PAD PCM_DIN 4 PCM_CLK 5 VIO 7 devices. For the highest integration level, the VOUT12 8 required board space has been minimized and 26 AGPIO0 RDA5870P PCM_SYNC 6 consumption levels target to battery powered 27 AGPIO1 25 40 Pins RF 24 NC 23 NC NC 9 22 NC VBAT 10 21 NC 12 13 14 15 16 17 18 19 20 XEN_OUT NC XIN NC NC LDO_ON NC NC product to enable a rapid time to market. 11 NC can easily and fast integrate RDA5870P on their XIN_32K customer cost has been reduced. Manufacturers Figure1-1. RDA5870P Top View RDA5870P uses CMOS process with a compact 6*6mm 40-pin QFN package. 1.1 Bluetooth Features CMOS single-chip fully-integrated radio and z Up-to 4Mbps high speed UART HCI support baseband z Support AFH z Compliant with Bluetooth 2.1 + EDR specification z Support 3-wire and 2-wire WIFI Co-existence z Bluetooth Piconet and Scatternet support z ARM7-based microprocessor with on-chip ROM z Low power consumption and RAM z Minimum external component z z handshake signals Meet class 2 and class 3 transmitting power requirement, support class1 operation with external power amplifier z Provides +10dbm transmitting power z NZIF receiver with -90dBm sensitivity z Battery power supply directly with internal LDO z Support DCXO with internal oscillator circuit Copyright (c) RDA Microelectronics Inc. 2009. All rights are reserved. The information contained herein is the exclusive property of RDA and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of RDA. RDA Microelectronics, Inc. RDA5870P Datasheet V1.0 1.2 FM Features z CMOS single-chip fully-integrated FM tuner z Programmable de-emphasis (50/75 s) z Low power consumption z Receive signal strength indicator (RSSI) Total current consumption lower than 20mA at z Bass boost 3.0V power supply z Volume control z Line-level analog output voltage z 32.768 KHz,26M 3/4 z Support worldwide frequency band 3/4 z z 50 -115 MHz 3/4 Image-reject down-converter z I2C control bus interface 3/4 High performance A/D converter z Directly support 32 resistance loading 3/4 IF selectivity performed internally z Integrated LDO regulator Fully integrated digital frequency synthesizer 3/4 Fully integrated on-chip RF and IF VCO 3/4 Fully integrated on-chip loop filter z Autonomous search tuning z Support 32.768KHz crystal oscillator z Reference clock Digital low-IF tuner 3/4 1.8 to 5.5 V operation voltage Digital auto gain control (AGC) Digital adaptive noise cancellation 3/4 Mono/stereo switch 3/4 Soft mute 3/4 High cut 1.3 Applications z Mobile handset z MP3,MP4 and PMP z PDA z Cordless phone The information contained herein is the exclusive property of RDA and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of RDA. Page 2 of 22 RDA Microelectronics, Inc. RDA5870P Datasheet V1.0 2 Table of Contents 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 General Description .................................................................................................................................... 1 1.1 Bluetooth Features ............................................................................................................................. 1 1.2 FM Features........................................................................................................................................ 2 1.3 Applications ........................................................................................................................................ 2 Table of Contents......................................................................................................................................... 3 Bluetooth Section Functional Description................................................................................................. 4 Bluetooth Section Features ......................................................................................................................... 5 Bluetooth Section Electrical Characteristics ............................................................................................ 6 Bluetooth Section Radio Characteristics................................................................................................... 7 FM Section Functional Description ......................................................................................................... 10 FM Section Electrical Characteristics ..................................................................................................... 12 FM Section Receiver Characteristics ...................................................................................................... 13 Pins Description......................................................................................................................................... 14 Application Circuit.................................................................................................................................... 16 Package Physical Dimension .................................................................................................................... 17 PCB Land Pattern ..................................................................................................................................... 18 Change List ................................................................................................................................................ 21 Contact Information ................................................................................................................................. 22 The information contained herein is the exclusive property of RDA and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of RDA. Page 3 of 22 RDA Microelectronics, Inc. RDA5870P Datasheet V1.0 3 Bluetooth Section Functional Description VBAT DC/DC BB A Modem x x A LDO_ON LDO ROM ROM POR RAM RAM ARM AHB D RF BT_RF PLL Envelon FM_IP FM_IN GPIO_FM1 TRAP SPI2 FM GPIO_FM2 GPIO_FM3 I2C_SDA I2C_SCL UART_TX UART_RX VIC SCU DMA TIMER FM_OUTR FM_OUTL I2C UART APB BRIDGE APB PLL GPIO OSC 32K/LPO XTAL XIN XIN_32K Figure3-1. RDA5870P Bluetooth Block Diagram RDA5870P is designed for use in UART HCI with handset chipsets. As shown in Figure3-1, RDA5870P integrates radio unit, baseband core, ARM7 core and memory which provides a complete lower Bluetooth protocol stack including the LC, LM and HCI interface. The information contained herein is the exclusive property of RDA and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of RDA. Page 4 of 22 RDA Microelectronics, Inc. RDA5870P Datasheet V1.0 4 Bluetooth Section Features Radio Build-in TX/RX switch Fully integrated synthesizer without any external component Support DCXO or external reference clock direct input Class2 and class3 transmit output power supported and over 30dB dynamic control range Supports /4 DQPSK and 8DPSK modulation High performance in receiver sensitivity and over 80dB dynamic range Integrated channel filter Auxiliary features On-chip regulator to support battery power supply directly Power management support low power mode Support share handset system reference clock Support 3-wire wifi cooperation handshake protocol Support external class1 PA and antenna switch Baseband Internal RAM allows fully speed data transfer, mixed voice and data, and fully piconet operation Logic for forward error correction, header error control, access code correlation, CRC, demodulation , encryption bit stream generation, whitening and transmit pulse shaping Support eSCO and AFH Support up to Bluetooth v2.1 + EDR Support A-law, -law and CVSD digitize audio CODEC in PCM interface Interface Provides UART HCI interface, up-to 4Mbps Provides I2C interface for host to do configuration Provides PCM audio interface Provides 3-wire and 2-wire WIFI Co-existence handshake interface Bluetooth Stack Compliant with Bluetooth 2.1 + EDR specification The information contained herein is the exclusive property of RDA and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of RDA. Page 5 of 22 RDA Microelectronics, Inc. RDA5870P Datasheet V1.0 5 Bluetooth Section Electrical Characteristics Table 5-1 DC Electrical Specification (Recommended Operation Conditions): SYMBOL DESCRIPTION MIN TYP MAX UNIT VBAT Supply Voltage from battery or LDO 3.3 4.0 4.2 V Tamb Ambient Temperature -20 27 +50 VIL CMOS Low Level Input Voltage 0 0.3*VIO V VIH CMOS High Level Input Voltage 0.7*VIO VIO V VTH CMOS Threshold Voltage 0.5*VIO V Notes: 1. VIO=1.8~3.3V Table 5-2 DC Electrical Specification (Absolute Maximum Ratings): SYMBOL DESCRIPTION MIN TYP MAX UNIT Tamb Ambient Temperature -20 +50 C IIN Input Current -10 +10 mA VIN Input Voltage -0.3 VIO+0.3 V Vlna LNA Input Level +5 dBm Table 5-3 Power consumption specification (VBAT = 4.0 V, VIO = 2.8V, TA = +27, RF 9dBm, LDO mode unless otherwise specified) STATE DESCRIPTION Headset voice HV3 type Headset SNIFF 500ms cycle Condition TYP UNIT 18 mA 0.5 mA 5.7 mA NO INQUIRE and PAGE SCAN HCI only active Both SCAN 1.28S cycle INQUIRE and PAGE SCAN 1.0 mA DeepSleep 26Mhz crystal off Ivbat=105uA,Ivio=13uA,External 118 A 7 A 32K input internal LDO off Table5-4 LDO_ON off Ivbat=6uA,Ivio=1uA DCDC Power consumption specification (VBAT = 4.0 V, VIO = 2.8V, TA = +27, RF 9dBm, DCDC mode unless otherwise specified) STATE DESCRIPTION Headset voice HV3 Headset SNIFF 500ms cycle Condition NO INQUIRE and PAGE SCAN HCI only active TYP UNIT 12 mA 0.5 mA 3.8 mA Both SCAN 1.28S cycle INQUIRE and PAGE SCAN 0.8 mA DeepSleep 26Mhz crystal off Ivbat=105uA,Ivio=13uA, 118 A 7 A External 32K input internal LDO off LDO_ON off Ivbat=6uA,Ivio=1uA The information contained herein is the exclusive property of RDA and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of RDA. Page 6 of 22 RDA Microelectronics, Inc. RDA5870P Datasheet V1.0 6 Bluetooth Section Radio Characteristics Table 6-1 Receiver Characteristics ------ Basic Data Rate (VBAT1, 2 = 4.0 V, TA = 27C, unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT Sensitivity @0.1% BER / -90 / dBm Maximum received signal@0.1% BER 0 / / dBm C/I c-channel / +10 / dB F=F0 + 1MHz / / -5 dB F=F0 - 1MHz / / 0 dB F=F0 + 2MHz / / -33 dB F=F0 - 2MHz / / -30 dB F=F0 + 3 MHz / / -45 dB F=F0 - 3MHz / / -40 dB F=Fimage / / 0 dB 30MHz-2000MHz -10 / / dBm 2000MHz-2400MHz -27 / / dBm 2500MHz-3000MHz -27 / / dBm 3000MHz-12.5GHz -10 / / dBm Intermodulation -35 / / dBm Spurious output level -150 / / dBm/Hz MIN TYP MAX UNIT / +4 +10 dBm 25 / / dB / 0.9 / MHz F=F0 + 1MHz / -20 / dBm F=F0 - 1MHz / -20 / dBm F=F0 + 2MHz / -35 / dBm F=F0 - 2MHz / -35 / dBm F=F0 + 3MHz / -40 / dBm F=F0 - 3MHz / -40 / dBm F=F0 + >3MHz / / -46 dBm General specifications Adjacent channel selectivity C/I Adjacent channel selectivity C/I Out-of-band blocking performance Notes: Table 6-2 Transmit Characteristics ------ Basic Data Rate (VBAT1, 2 = 4.0V, TA = 27 C, unless otherwise specified) SYMBOL PARAMETER CONDITIONS General specifications Maximum RF transmit power RF power control range 20dB band width Adjacent channel transmit power The information contained herein is the exclusive property of RDA and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of RDA. Page 7 of 22 RDA Microelectronics, Inc. RDA5870P Datasheet V1.0 F=F0 - >3MHz -46 / / dBm f1avg Maximum modulation / 164 / kHz f2max Minimum modulation / 145 / kHz 0.80 / / / ICFT / +4 / kHz Drift rate / 0.1 / kHz/50us Drift (1 slot packet) / -2 / kHz Drift (5 slot packet) / -2 / kHz MIN TYP MAX UNIT Sensitivity @0.01% BER / -86 / dBm Maximum received signal@0.1% BER 0 / / dBm C/I c-channel / / +13 dB F=F0 + 1MHz / / +5 dB F=F0 - 1MHz / / 0 dB F=F0 + 2MHz / / -20 dB F=F0 - 2MHz / / -20 dB F=F0 + 3MHz / / -40 dB F=F0 - 3MHz / / -40 dB F=Fimage / / -7 dB Sensitivity @0.01% BER / -83 / dBm Maximum received signal@0.1% BER 0 / / dBm C/I c-channel / / +18 dB F=F0 + 1MHz / / +5 dB F=F0 - 1MHz / / +5 dB F=F0 + 2MHz / / -20 dB F=F0 - 2MHz / / -20 dB F=F0 + 3MHz / / -35 dB F=F0 - 3MHz / / -35 dB F=Fimage / / 0 dB f2avg/f1avg Notes: Table 6-3 Receiver Characteristics ------ Enhanced Data Rate (VBAT1, 2 = 4.0 V, TA = 27C, unless otherwise specified) PARAMETER CONDITIONS /4 DQPSK Adjacent channel selectivity C/I Adjacent channel selectivity C/I 8DPSK Adjacent channel selectivity C/I Adjacent channel selectivity C/I Notes: The information contained herein is the exclusive property of RDA and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of RDA. Page 8 of 22 RDA Microelectronics, Inc. Table 6-4 RDA5870P Datasheet V1.0 Transmit Characteristics ------ Enhanced Data Rate (VBAT1, 2 = 4.0 V, TA = 27C, unless otherwise specified) PARAMETER CONDITIONS MIN TYP MAX UNIT Maximum RF transmit power / +7 / dBm Relative transmit control / -1.6 / dB General specifications kHz /4 DQPSK max w0 / +7.4 / kHz /4 DQPSK max wi / +6.7 / kHz /4 DQPSK max |wi + w0| / +2.4 / kHz 8DPSK max w0 / +7.1 / kHz 8DPSK max wi / +4.4 / kHz 8DPSK max |wi + w0| / +2.7 / kHz RMS DEVM / 4.7 / % 99% DEVM / / 30 % Peak DEVM / 8.8 / % RMS DEVM / 4.6 / % 99% DEVM / / 20 % Peak DEVM / 11.3 / % F=F0 + 1MHz / -25 / dBm F=F0 - 1MHz / -25 / dBm F=F0 + 2MHz / -25 / dBm F=F0 - 2MHz / -25 / dBm F=F0 + 3MHz / -30 / dBm F=F0 - 3MHz / -30 / dBm F=F0 +/- > 3MHz / / -32 dBm / 100 / % /4 DQPSK Modulation Accuracy 8DPSK Modulation Accuracy In-band spurious emissions EDR Differential Phase Coding Notes: The information contained herein is the exclusive property of RDA and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of RDA. Page 9 of 22 RDA Microelectronics, Inc. RDA5870P Datasheet V1.0 7 FM Section Functional Description I PGA LNAP I ADC L DAC LOUT R DAC ROUT Audio DSP Core + LNA LNAN - Q PGA Limiter 32.768 KHz RCLK 2.7-5.5 V VDD Q ADC digital filter MPX decoder stereo/mono audio RDS /RBDS VCO Synthesizer GPIO RSSI SCLK Interface Bus LDO GPIO MCU SDIO VIO Figure 7-1. RDA5870P FM Section Block Diagram FM Receiver The PGA amplifies the mixer output IF signal and then digitized with ADCs. The receiver uses a digital low-IF architecture that avoids the difficulties associated with direct conversion while delivering lower solution cost and reduces complexity, and integrates a low noise amplifier (LNA) supporting the FM broadcast band (50 to 115MHz), a quadrature image-reject mixer, a programmable gain control (PGA), a high resolution analog-to-digital converters (ADCs), an audio DSP and a highfidelity digital-to-analog converters (DACs). The DSP core finishes the channel selection, FM demodulation, stereo MPX decoder and output audio signal. The MPX decoder can autonomous switch from stereo to mono to limit the output noise. The LNA has differential input ports (LNAP and LNAN) and supports any input port by set according registers bits (LNA_port_sel[1:0]). It default input common mode voltage is GND. The DACs convert digital audio signal to analog and change the volume at same time. The DACs has low-pass feature and -3dB frequency is about 30 KHz. Synthesizer The limiter prevents overloading and limits the amount of intermodulation products created by strong adjacent channels. The frequency synthesizer generates the local oscillator signal which divide to quadrature, then be used to downconvert the RF input to a constant low intermediate frequency (IF). The synthesizer reference clock is 32.768 KHz. The quadrature mixer down converts the LNA output differential RF signal to low-IF, it also has image-reject function. The synthesizer frequency is defined by bits CHAN[9:0] with the range from 50MHz to 115MHz. The information contained herein is the exclusive property of RDA and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of RDA. Page 10 of 22 RDA Microelectronics, Inc. RDA5870P Datasheet V1.0 Power Supply The RDA5870P FM section integrated LDO which supplies power to the chip. The external supply voltage range is 1.8-5.5 V. RESET and Control Interface select The RDA5870P FM section is RESET itself When VIO is Power up. And also support soft reset by trigger 02H BIT1 from 0 to 1. The control interface is I2C. Control Interface The I2C interface is compliant to I2C Bus Specification 2.1. It includes two pins: SCL and SDA. A I2C interface transfer begins with START condition, a command byte and data bytes, each byte has a followed ACK (or NACK) bit, and ends with STOP condition. The command byte includes a 7-bit chip address (0010000b) and a R/W bit. The ACK (or NACK) is always sent out by receiver. When in write transfer, data bytes is written out from MCU, and when in read transfer, data bytes is read out from RDA5870P. There is no visible register address in I2C interface transfers. The I2C interface has a fixed start register address (0x02h for write transfer and 0x0Ah for read transfer), and an internal incremental address counter. If register address meets the end of register file, 0x3Ah, register address will wrap back to 0x00h. For write transfer, MCU programs registers from register 0x02h high byte, then register 0x02h low byte, then register 0x03h high byte, till the last register. RDA5870P always gives out ACK after every byte, and MCU gives out STOP condition when register programming is finished. For read transfer, after command byte from MCU, RDA5870P sends out register 0x0Ah high byte, then register 0x0Ah low byte, then register 0x0Bh high byte, till receives NACK from MCU. MCU gives out ACK for data bytes besides last data byte. MCU gives out NACK for last data byte, and then RDA5870P will return the bus to MCU, and MCU will give out STOP condition. Details please refer to RDA5870P Programming Guide or RDA5802N Programming Guide and Datasheet. The information contained herein is the exclusive property of RDA and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of RDA. Page 11 of 22 RDA Microelectronics, Inc. RDA5870P Datasheet V1.0 8 FM Section Electrical Characteristics Table 8-1 DC Electrical Specification (Recommended Operation Conditions): SYMBOL DESCRIPTION MIN TYP MAX UNIT VBAT Supply Voltage 3.3 4.0 4.2 V VIO Interface Supply Voltage 1.5 3.0 3.6 V Tamb Ambient Temperature -20 27 +80 VIL CMOS Low Level Input Voltage 0 0.3*VIO V VIH CMOS High Level Input Voltage 0.7*VIO VIO V VTH CMOS Threshold Voltage 0.5*VIO V Notes: 1. VIO=1.8~3.3V Table 8-2 DC Electrical Specification (Absolute Maximum Ratings): SYMBOL DESCRIPTION MIN TYP MAX UNIT VIO Interface Supply Voltage -0.5 +4 V Tamb Ambient Temperature -20 +60 C IIN Input Current (1) -10 +10 mA VIN Input Voltage(1) -0.3 VIO+0.3 V Vlna LNA FM Input Level +10 dBm Notes: 1. For Pin: SCL, SDA Table 8-3 Power Consumption Specification (VBAT = 4.0 V, VIO=3.0V, TA = +25 , unless otherwise specified) SYMBOL DESCRIPTION Condition TYP UNIT IA Analog Supply Current ENABLE=1 20 mA IVIO Interface Supply Current SCL and RCLK inactive 90 A IAPD Analog Powerdown Current ENABLE=0 5 A IVIO Interface Powerdown Current ENABLE=0 10 A The information contained herein is the exclusive property of RDA and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of RDA. Page 12 of 22 RDA Microelectronics, Inc. RDA5870P Datasheet V1.0 9 FM Section Receiver Characteristics Table 9-1 Receiver Characteristics (VBAT = 4.0 V, VIO= 3.0V, TA = 25 C, unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN Adjust BAND Register 50 TYP MAX UNIT 115 MHz General specifications Fin FM Input Frequency Range 1,2,3 Vrf 4 Input IP3 1,2 am - 1.4 1.8 65MHz - 1.2 1.5 88MHz - 1.2 1.5 98MHz - 1.3 1.5 108MHz - 1.3 1.5 115MHz - 1.3 1.8 AGCD=1 80 - - dBV m=0.3 60 - - dB S/N=26dB Sensitivity IP3in 50MHz AM Suppression V EMF S200 Adjacent Channel Selectivity 200KHz 50 70 - dB S400 400KHz Selectivity 400KHz 60 85 - dB Volume [3:0] =1111 - 360 - mV 55 57 - 53 55 - 35 - - dB 32 - - VAFL; VAFR Audio L/R Output Voltage 1,2 (Pins LOUT and ROUT) Mono2 Maximum Signal to Noise S/N 1,2,3,5 6 Stereo Ratio SCS Stereo Channel Separation Audio Output Loading RL Single-ended Resistance Audio Total Harmonic THD 1,3,6 Distortion Volume[3:0] Rload=1K - 0.15 0.2 =1111 Rload=32 - 0.2 - - - 0.05 dB dB Audio Output L/R AOI Imbalance1,6 Mute Attenuation Ratio1 Rmute Audio Response1 BWaudio dB Volume[3:0]=0000 60 - - 1KHz=0dB 9 Low Freq - 100 - 3dB point High Freq - 14 - % Hz Pins LNAN, LNAP, LOUT, ROUT and NC(22,23) Vcom_rfin Pins LNAN/LNAP Input Audio Output Common Mode Vcom 1.0 Voltage8 Vcom_nc V 0 Common Mode Voltage 1.05 1.1 Pins NC ( 22,23 ) Common Floating Mode Voltage V V Notes:1. Fin=65 to 115MHz; Fmod=1KHz; de-emphasis=75s; MONO=1; L=R unless noted otherwise; 2. f=22.5KHz; 3. BAF = 300Hz to 15KHz, RBW <=10Hz; 6. f=75KHz,fpilot=10% 5. PRF=60dBUV; 8. At LOUT and ROUT pins 4. |f2-f1|>1MHz, f0=2xf1-f2, AGC disable, Fin=76 to 108MHz; 7. Measured at VEMF = 1 m V, f RF = 65 to 108MHz 9. Adjustable The information contained herein is the exclusive property of RDA and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of RDA. Page 13 of 22 RDA Microelectronics, Inc. RDA5870P Datasheet V1.0 I2C_SDA I2C_SCL HOST_WAKE GPIO2/ WLAN_ACTIVE NC FM_OUTR FM_OUTL NC NC NC 10 Pins Description 40 39 38 37 36 35 34 33 32 31 UART_TX 1 30 FM_IP UART_RX 2 29 GND PCM_DOUT 3 28 FM_IN 27 AGPIO1/BT_PRIORITY 26 AGPIO0/BT_ACTIVE 25 RF 24 NC VOUT12 8 23 NC NC 9 22 NC VBAT 10 21 NC GND PAD PCM_DIN 4 PCM_CLK 5 RDA5870P PCM_SYNC 6 40 Pins 12 13 14 15 16 17 18 19 20 XEN_OUT NC XIN NC NC LDO_ON NC NC XIN_32K 11 NC VIO 7 Figure10-1. RDA5870P Top View The information contained herein is the exclusive property of RDA and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of RDA. Page 14 of 22 RDA Microelectronics, Inc. Table 10-1 RDA5870P Datasheet V1.0 RDA5870P Pins Description PIN UART_TX UART_RX PCM_DOUT PCM_DIN PCM_CLK PCM_SYNC VIO VOUT12 NC VBAT XIN_32K NC XEN_OUT NC NO. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 DESCRIPTION UART data output UART data input Synchronous data output Synchronous data input Synchronous data clock Synchronous data sync IO power supply Digital voltage output, connected with decouple capacitor. Should be not connected Bluetooth and FM power supply 32.768K clock input Should be not connected Clock request output Should be not connected XIN 15 For crystal input or external clock input NC 16 Should be not connected NC 17 Should be not connected LDO_ON 18 Internal LDO power on NC 19 Should be not connected NC 20 Should be not connected NC 21 Should be not connected NC 22 Should be not connected NC 23 Should be not connected NC 24 Should be not connected RF 25 AGPIO0 26 AGPIO1 27 FM_IN 28 Radio signal Programmable I/O Also used as bt_active when using WIFI co-existence handshake interface. Programmable I/O. Also used as bt_priority when using WIFI co-existence handshake interface. LNA input port. For single-ended input, LNAN should be connected to RFGND GND 29 LNA ground. Connect to ground plane on PCB FM_IP 30 LNA input port. For single-ended input, LNAN should be connected to RFGND NC 31 Should be not connected NC 32 Should be not connected NC 33 Should be not connected FM_OUTL 34 Left audio output FM_OUTR 35 Right audio output NC 36 GPIO2 37 HOST_WAKE 38 I2C_SCL 39 Should be not connected Programmable I/O. Also used as wl_active when using WIFI co-existence handshake interface. To wakeup host Also used as wlan_active when using WIFI co-existence handshake interface. I2C interface Clock signal I2C_SDA 40 I2C interface Data signal The information contained herein is the exclusive property of RDA and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of RDA. Page 15 of 22 RDA Microelectronics, Inc. RDA5870P Datasheet V1.0 11 Application Circuit Please refer to the <<RDA 5870P hardware application guide>>. FM Section antenna input and audio output diagram: Notes: 1. J1: Common 32 Resistance Headphone, if audio loading resistance is larger than 32; Audio amplifier, if audio loading resistance is less than 32; 2. U1: RDA5870 Chip; 3. FM Choke (L3 and C3) for Audio Common and LNA Input Common; Figure 11-1. RDA5870P FM Tuner Application Diagram Bill of Materials: Component U1 Value RDA5870P J1 Description Bluetooth/FM Tuner Single Chip Supplier RDA Common 32 Resistance Headphone /audio amplifier L3/C3 100nH/24pF LC Chock for LNA Input Murata C4,C5 125F Audio AC Couple Capacitors Murata F1/F2 1.5K@100MHz FM Band Ferrite Murata The information contained herein is the exclusive property of RDA and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of RDA. Page 16 of 22 RDA Microelectronics, Inc. RDA5870P Datasheet V1.0 12 Package Physical Dimension Figure12-1 illustrates the package details for the RDA5870P. The package is lead-free and RoHS-compliant. Figure12-1. 40-Pin 6x6 Quad Flat No-Lead (QFN) The information contained herein is the exclusive property of RDA and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of RDA. Page 17 of 22 RDA Microelectronics, Inc. RDA5870P Datasheet V1.0 13 PCB Land Pattern 0.85 6.6 0.28 0.5 4.35 PCB LAND 16x PCB VIAS DIAMETER 0.3-0.4mm SOLDER MASK 4.35 6.6 Figure13-1. PCB Land Pattern for 40-Pin QFN 0.85 0.28 0.5 >0.0625 ~0 6.6 PCB LAND 4.35 0.9 MULTIPLE STENCIL OPENINGS (~40%) 4.35 SOLDER MASK 6.6 Figure13-2. PCB Solder Paste Stencil Openings The information contained herein is the exclusive property of RDA and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of RDA. Page 18 of 22 RDA Microelectronics, Inc. RDA5870P Datasheet V1.0 Figure13-3.Classification Reflow Profile Table 13-1 Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Average Ramp-Up Rate 3 /second max. 3 /second max. -Temperature Min (Tsmin) 100 150 -Temperature Max (Tsmax) 100 200 -Time (tsmin to tsmax) 60-120 seconds 60-180 seconds -Temperature (TL) 183 217 -Time (tL) 60-150seconds 60-150 seconds Peak /Classification See Table 9-2 See Table 9-3 10-30 seconds 20-40 seconds Ramp-Down Rate 6 /second max. 6 /seconds max. Time 25 oC to Peak 6 minutes max. 8 minutes max. (TSmax to Tp) Preheat Time maintained above: Temperature(Tp) Time within 5 oC of actual Peak Temperature (tp) Temperature The information contained herein is the exclusive property of RDA and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of RDA. Page 19 of 22 RDA Microelectronics, Inc. RDA5870P Datasheet V1.0 Table 13-2 Pb-free Process - Package Peak Reflow Temperatures Package Thickness Volume mm3 <350 Volume mm3 350 2.5mm 240 + 0/-5 225 + 0/-5 2.5mm 225 + 0/-5 225 + 0/-5 Table 13-3 Pb-free Process - Package Classification Reflow Temperatures Package Volume mm3 Volume mm3 Volume mm3 Thickness 350-2000 350 2000 1.6mm 260 + 0 * 260 + 0 * 260 + 0 * 1.6mm - 2.5mm 260 + 0 * 250 + 0 * 245 + 0 * 2.5mm 250 + 0 * 245 + 0 * 245 + 0 * *Tolerance : The device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature(this mean Peak reflow temperature + 0 . For example 260+ 0 ) at the rated MSL Level. Note 1: All temperature refer topside of the package. Measured on the package body surface. Note 2: The profiling tolerance is + 0 , - X (based on machine variation capability)whatever is required to control the profile process but at no time will it exceed - 5 . The producer assures process compatibility at the peak reflow profile temperatures defined in Table 13-3. Note 3: Package volume excludes external terminals(balls, bumps, lands, leads) and/or non integral heat sinks. Note 4: The maximum component temperature reached during reflow depends on package the thickness and volume. The use of convection reflow processes reduces the thermal gradients between packages. However, thermal gradients due to differences in thermal mass of SMD package may sill exist. Note 5: Components intended for use in a "lead-free" assembly process shall be evaluated using the "lead free" classification temperatures and profiles defined in Table13-1, 13-2, 13-3 whether or not lead free. RoHS Compliant The product does not contain lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB) or polybrominated biphenyl ethers (PBDE), and are therefore considered RoHS compliant. ESD Sensitivity Integrated circuits are ESD sensitive and can be damaged by static electricity. Proper ESD techniques should be used when handling these devices. The information contained herein is the exclusive property of RDA and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of RDA. Page 20 of 22 RDA Microelectronics, Inc. RDA5870P Datasheet V1.0 14 Change List REV V1.0 DATE 03/25/2011 AUTHER Gibson CHANGE DESCRIPTION Initial version from RDA5870. The information contained herein is the exclusive property of RDA and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of RDA. Page 21 of 22 RDA Microelectronics, Inc. RDA5870P Datasheet V1.0 15 Contact Information RDA Microelectronics, Inc. Suite 302 Building 2, 690 Bibo Road Pudong District, Shanghai Tel: 86-21-50271108 Fax: 86-21-50271099 Postal Code: 201203 Suite 1108 Block A, e-Wing Center, 113 Zhichun Road Haidian District, Beijing Tel: 86-10-62635360 Fax: 86-10-82612663 Postal Code: 100086 2501 Room, District A, XiNian Center, 6021 ShenNan Road, Nanshan District, Shenzhen. Tel: 86-755- 86187018 Fax: 86-755- 33395366 Postal Code: 518057 The information contained herein is the exclusive property of RDA and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of RDA. Page 22 of 22