Semiconductor Group 1
PNP Silicon AF Transistors BC 807
BC 808
Type Ordering CodeMarking Package1)
Pin Configuration
BC 807-16
BC 807-25
BC 807-40
BC 808-16
BC 808-25
BC 808-40
Q62702-C1735
Q62702-C1689
Q62702-C1721
Q62702-C1736
Q62702-C1504
Q62702-C1692
5As
5Bs
5Cs
5Es
5Fs
5Gs
SOT-23
B E C
123
1) For detailed information see chapter Package Outlines.
●
For general AF applications
●
High collector current
●
High current gain
●
Low collector-emitter saturation voltage
●
Complementary types: BC 817, BC 818 (NPN)
07.94
Semiconductor Group 2
BC 807
BC 808
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage VCE0 V
Peak collector current ICM A
Collector current ICmA
Junction temperature Tj˚C
Total power dissipation, TC = 79 ˚C Ptot mW
Storage temperature range Tstg
Collector-base voltage VCB0
Thermal Resistance
Junction - ambient1) Rth JA ≤ 285 K/W
500
1
330
150
– 65 … + 150
Emitter-base voltage VEB0
Base current IBmA100
45 25
50 30
BC 807 BC 808
Peak base current IBM 200
55
Junction - soldering point Rth JS ≤ 215
1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group 3
BC 807
BC 808
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
DC current gain1)
IC = 100 mA; VCE = 1 V
BC 807-16, BC 808-16
BC 807-25, BC 808-25
BC 807-40, BC 808-40
IC = 300 mA; VCE = 1 V
BC 807-16, BC 808-16
BC 807-25, BC 808-25
BC 807-40, BC 808-40
VCollector-emitter breakdown voltage
IC = 10 mA BC 807
BC 808
V(BR)CE0
45
25 –
––
–
nA
µA
Collector cutoff current
VCB = 25 V
VCB = 25 V, TA = 150 ˚C
ICB0 –
––
–100
5
UnitValuesParameter Symbol
min. typ. max.
DC characteristics
Collector-base breakdown voltage
IC = 100 µABC 807
BC 808
V(BR)CB0
50
30 –
––
–
Emitter-base breakdown voltage, IE = 10 µAV(BR)EB0 5––
V
Collector-emitter saturation voltage1)
IC = 500 mA; IB = 50 mA VCEsat – – 0.7
–hFE
100
160
250
60
100
170
160
250
350
–
–
–
250
400
630
–
–
–
Base-emitter saturation voltage1)
IC = 500 mA; IB = 50 mA VBEsat ––2
nAEmitter cutoff current, VEB = 4 V IEB0 – – 100
MHzTransition frequency
IC = 50 mA, VCE = 5 V, f = 20 MHz fT– 200 –
AC characteristics
pFOutput capacitance
VCB = 10 V, f = 1 MHz Cobo –10–
Input capacitance
VEB = 0.5 V, f = 1 MHz Cibo –60–
1)
Pulse test: t ≤ 300 µs, D ≤ 2 %.
Semiconductor Group 4
BC 807
BC 808
Total power dissipation Ptot = f (TA*; TS)
* Package mounted on epoxy
Permissible pulse load Ptot max/Ptot DC = f (tp)
Transition frequency fT = f (IC)
VCE = 5 V
Collector cutoff current ICB0 = f (TA)
VCB0 = 60 V
Semiconductor Group 5
BC 807
BC 808
Base-emitter saturation voltage
IC = f (VBEsat)
hFE = 10
DC current gain hFE = f (IC)
VCE = 1 V
Collector-emitter saturation voltage
IC = f (VCEsat)
hFE = 10
Semiconductor Group 1
NPN Silicon AF Transistors BC 817
BC 818
Type Ordering CodeMarking Package1)
Pin Configuration
BC 817-16
BC 817-25
BC 817-40
BC 818-16
BC 818-25
BC 818-40
Q62702-C1732
Q62702-C1690
Q62702-C1738
Q62702-C1739
Q62702-C1740
Q62702-C1505
6As
6Bs
6Cs
6Es
6Fs
6Gs
SOT-23
B E C
123
1) For detailed information see chapter Package Outlines.
●
For general AF applications
●
High collector current
●
High current gain
●
Low collector-emitter saturation voltage
●
Complementary types: BC 807, BC 808 (PNP)
07.94
Semiconductor Group 2
BC 817
BC 818
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage VCE0 V
Peak collector current ICM A
Collector current ICmA
Junction temperature Tj˚C
Total power dissipation, TC = 79 ˚C Ptot mW
Storage temperature range Tstg
Collector-base voltage VCB0
Thermal Resistance
Junction - ambient1) Rth JA ≤ 285 K/W
500
1
330
150
– 65 … + 150
Emitter-base voltage VEB0
Base current IBmA100
45 25
50 30
BC 817 BC 818
Peak base current IBM 200
55
Junction - soldering point Rth JS ≤ 215
1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group 3
BC 817
BC 818
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
–
DC current gain1)
IC = 100 mA; VCE = 1 V
BC 817-16, BC 818-16
BC 817-25, BC 818-25
BC 817-40, BC 818-40
IC = 300 mA; VCE = 1 V
BC 817-16, BC 818-16
BC 817-25, BC 818-25
BC 817-40, BC 818-40
hFE
100
160
250
60
100
170
160
250
350
–
–
–
250
400
630
–
–
–
VCollector-emitter breakdown voltage
IC = 10 mA BC 817
BC 818
V(BR)CE0
45
25 –
––
–
nA
µA
Collector cutoff current
VCB = 25 V
VCB = 25 V, TA = 150 ˚C
ICB0 –
––
–100
5
UnitValuesParameter Symbol
min. typ. max.
DC characteristics
Collector-base breakdown voltage
IC = 100 µABC 817
BC 818
V(BR)CB0
50
30 –
––
–
Emitter-base breakdown voltage, IE = 10 µAV(BR)EB0 5––
V
Collector-emitter saturation voltage1)
IC = 500 mA; IB = 50 mA VCEsat – – 0.7
Base-emitter saturation voltage1)
IC = 500 mA; IB = 50 mA VBEsat ––2
nAEmitter cutoff current, VEB = 4 V IEB0 – – 100
MHzTransition frequency
IC = 50 mA, VCE = 5 V, f = 20 MHz fT– 170 –
AC characteristics
pFOutput capacitance
VCB = 10 V, f = 1 MHz Cobo –6–
Input capacitance
VEB = 0.5 V, f = 1 MHz Cibo –60–
1)
Pulse test: t ≤ 300 µs, D ≤ 2 %.
Semiconductor Group 4
BC 817
BC 818
Total power dissipation Ptot = f (TA*; TS)
* Package mounted on epoxy
Permissible pulse load Ptot max/Ptot DC = f (tp)
Transition frequency fT = f (IC)
VCE = 5 V
Collector cutoff current ICB0 = f (TA)
VCB0 = 60 V
Semiconductor Group 5
BC 817
BC 818
Base-emitter saturation voltage
IC = f (VBEsat)
hFE = 10
DC current gain hFE = f (IC)
VCE = 1 V
Collector-emitter saturation voltage
IC = f (VCEsat)
hFE = 10