November 2014
DocID024040 Rev 3
1/19
This is information on a product in full production.
www.st.com
STH310N10F7-2,
STH310N10F7-6
N-channel 100 V, 1.9 mΩ typ.,180 A, STripFET™ F7
Power MOSFETs in H2PAK-2 and H2PAK-6 packages
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
VDS
RDS(on) max.
ID
STH310N10F7-2
100 V
2.3 mΩ
180 A
STH310N10F7-6
Among the lowest RDS(on) on the market
Excellent figure of merit (FoM)
Low Crss/Ciss ratio for EMI immunity
High avalanche ruggedness
Description
These N-channel Power MOSFETs utilize
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
Table 1: Device summary
Order code
Marking
Package
Packing
STH310N10F7-2
310N10F7
H2PAK-2
Tape
and reel
STH310N10F7-6
H2PAK-6
H2PAK-2 H2PAK-6
TAB TAB
1
2317
S(2,3,4,5,6,7)
Contents
STH310N10F7-2, STH310N10F7-6
2/19
DocID024040 Rev 3
Contents
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves) ...................................................... 6
3 Test circuits ..................................................................................... 8
4 Package information ....................................................................... 9
4.1 H2PAK-2 package information ......................................................... 10
4.2 H2PAK-6 package information ......................................................... 13
4.3 Packing information ......................................................................... 16
5 Revision history ............................................................................ 18
STH310N10F7-2, STH310N10F7-6
Electrical ratings
DocID024040 Rev 3
3/19
1 Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
100
V
VGS
Gate-source voltage
± 20
V
ID(1)
Drain current (continuous) at TC = 25 °C
180
A
Drain current (continuous) at TC = 100 °C
120
A
ID(2)
Drain current (pulsed)
720
A
PTOT
Total dissipation at TC = 25 °C
315
W
Derating factor
2.1
W/ºC
EAS(3)
Single pulse avalanche energy (TJ = 25 °C
L = 0.55 mH, IAS = 65 A)
1
J
TJ
Operating junction temperature
-55 to 175
°C
Tstg
Storage temperature
°C
Notes:
(1)Current limited by package
(2)Pulse width limited by safe operating area
(3)Starting TJ = 25 °C, ID = 60 A, VDD = 50 V
Table 3: Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case
0.48
°C/W
Rthj-pcb(1)
Thermal resistance junction-pcb
35
°C/W
Notes:
(1)When mounted on FR-4 board of 1 inch², 2 oz Cu
Electrical characteristics
STH310N10F7-2, STH310N10F7-6
4/19
DocID024040 Rev 3
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4: On/off-state
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage (VGS= 0)
ID = 250 µA
100
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = 100 V
1
µA
VDS = 100 V;
TC = 125 °C
100
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = 20 V
100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
2.5
3.5
4.5
V
RDS(on)
Static drain-source on-
resistance
VGS = 10 V, ID = 60 A
1.9
2.3
mΩ
Table 5: Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VDS = 25 V, f = 1 MHz,
VGS = 0
-
12800
-
pF
Coss
Output capacitance
3500
pF
Crss
Reverse transfer
capacitance
170
pF
Qg
Total gate charge
VDD = 50 V, ID = 180 A
VGS = 10 V
See Figure 14: "Gate
charge test circuit"
180
nC
Qgs
Gate-source charge
78
nC
Qgd
Gate-drain charge
34
nC
Table 6: Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VDD = 50 V, ID = 90 A,
RG = 4.7 Ω, VGS= 10 V
See Figure 13:
"Switching times test
circuit for resistive load"
-
62
-
ns
tr
Rise time
108
ns
td(off)
Turn-off delay time
148
ns
tf
Fall time
40
ns
STH310N10F7-2, STH310N10F7-6
Electrical characteristics
DocID024040 Rev 3
5/19
Table 7: Source-drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
180
A
ISDM(1)
Source-drain current (pulsed)
720
A
VSD(2)
Forward on voltage
ISD = 60 A, VGS = 0
1.5
V
trr
Reverse recovery time
ISD = 180 A,
di/dt = 100 A/µs,
VDD = 80 V,
Tj = 150 °C
85
ns
Qrr
Reverse recovery charge
200
nC
IRRM
Reverse recovery current
4.7
A
Notes:
(1)Pulse width limited by safe operating area
(2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Electrical characteristics
STH310N10F7-2, STH310N10F7-6
6/19
DocID024040 Rev 3
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area
Figure 3: Thermal impedance
Figure 4: Output characteristics
Figure 5: Transfer characteristics
Figure 6: Gate charge vs gate-source
voltage
Figure 7: Static drain-source on-resistance
ID
100
10
1
0.10.1 1VDS(V)
10
(A)
Operation in this area is
Limited by max R
DS(on)
100µs
1ms
10ms
Tj= 175 °C
Tc= 25 °C
Sinlge
pulse
AM15430v1
10-5 10-4 10-3 10-2 10-1 tp(s)
10-2
10-1
K
0.2
0.05
0.02
0.01
0.1
Zth=k Rthj-c
ᵟ=tp/t
tp
t
Single pulse
ᵟ=0.5
280tok
5V
6V
7V
VGS=10V
ID
150
100
50
004VDS(V)
8
(A)
26
200
250
8V
300
AM14734v1
ID
150
100
50
004VGS(V)
8
(A)
26
200
250
VDS = 2V
300
350
1 3 57
AM14735v1
VGS
6
4
2
00Qg(nC)
(V)
100
8
50
10 VDD=50V
ID=180 A
150
AM14736v1
RDS(on)
2.15
2.10
2.05
2080 ID(A)
(mΩ)
40 120
2.20
2.25 VGS=10V
160
AM15431v1
STH310N10F7-2, STH310N10F7-6
Electrical characteristics
DocID024040 Rev 3
7/19
RDS(on)
1.6
1.2
0.8
0.4 0TJ(°C)
(norm)
-25 75
25
-75 125
2.0 ID = 60A
AM14740v1
Figure 8: Normalized V(BR)DSS vs
temperature
Figure 9: Capacitance variations
Figure 10: Source-drain diode forward
characteristics
Figure 11: Normalized gate threshold voltage
vs temperature
Figure 12: Normalized on-resistance vs temperature
-25 75
25
-75 125
V(BR)DSS
TJ(°C)
(norm)
0.94
0.96
0.98
1.00
1.02
1.04 ID= 1mA
AM14742v1
C
6000
4000
2000
0040 VDS(V)
(pF)
20
8000
60
Ciss
Coss
Crss
10000
14000
80 100
12000
AM14738v1
TJ=-50°C
TJ=150°C
TJ=25°C
VSD
040 ISD(A)
(V)
160
80 120
0.45
0.55
0.65
0.75
0.85
0.95
1.05
AM14739v1
VGS(th)
0.90
0.80
0.70
0.60 TJ(°C)
(norm)
1.0
0
-25 75
25
-75 125
ID= 250µA
AM14741v1
Test circuits
STH310N10F7-2, STH310N10F7-6
8/19
DocID024040 Rev 3
3 Test circuits
Figure 13: Switching times test circuit for resistive
load
Figure 14: Gate charge test circuit
Figure 15: Test circuit for inductive load
switching and diode recovery times
Figure 16: Unclamped inductive load test circuit
Figure 17: Unclamped inductive waveform
Figure 18: Switching time waveform
AM01469v1
VDD
47 kΩ1 kΩ
47 kΩ
2.7 kΩ
1 kΩ
12 V
Vi ≤ VGS
2200 μ F
PW
IG= CONST 100 Ω
100 nF
D.U.T.
VG
V(BR)DSS
VDD
VDD
VD
IDM
ID
AM01472v1
AM01473v1
0
VGS 90%
VDS
ton
90%
10%
90%
10%
td(on) tr
t
td(off) tf
10%
0
off
STH310N10F7-2, STH310N10F7-6
Package information
DocID024040 Rev 3
9/19
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Package information
STH310N10F7-2, STH310N10F7-6
10/19
DocID024040 Rev 3
4.1 H2PAK-2 package information
Figure 19: H²PAK-2 outline
8159712_D
STH310N10F7-2, STH310N10F7-6
Package information
DocID024040 Rev 3
11/19
Table 8: H²PAK-2 mechanical data
Dim.
mm
Min.
Typ.
Max.
A
4.30
-
4.80
A1
0.03
0.20
C
1.17
1.37
e
4.98
5.18
E
0.50
0.90
F
0.78
0.85
H
10.00
10.40
H1
7.40
7.80
L
15.30
15.80
L1
1.27
1.40
L2
4.93
5.23
L3
6.85
7.25
L4
1.5
1.7
M
2.6
2.9
R
0.20
0.60
V
0°
8°
Package information
STH310N10F7-2, STH310N10F7-6
12/19
DocID024040 Rev 3
Figure 20: H²PAK-2 recommended footprint
8159712_D
STH310N10F7-2, STH310N10F7-6
Package information
DocID024040 Rev 3
13/19
4.2 H2PAK-6 package information
Figure 21: H²PAK-6 outline
8159693_Rev_F
Package information
STH310N10F7-2, STH310N10F7-6
14/19
DocID024040 Rev 3
Table 9: H²PAK-6 mechanical data
Dim.
mm
Min.
Typ.
Max.
A
4.30
-
4.80
A1
0.03
0.20
C
1.17
1.37
e
2.34
2.74
e1
4.88
5.28
e2
7.42
7.82
E
0.45
0.60
F
0.50
0.70
H
10.00
10.40
H1
7.40
7.80
L
14.75
15.25
L1
1.27
1.40
L2
4.35
4.95
L3
6.85
7.25
L4
1.5
1.75
M
1.90
2.50
R
0.20
0.60
V
0°
8°
STH310N10F7-2, STH310N10F7-6
Package information
DocID024040 Rev 3
15/19
Figure 22: H²PAK-6 recommended footprint
Dimensions are in mm.
footprint_Rev_F
Package information
STH310N10F7-2, STH310N10F7-6
16/19
DocID024040 Rev 3
4.3 Packing information
Figure 23: Tape outline
Figure 24: Reel outline
A
D
B
Full radius
Tape slot
In core for
Tape start
G measured
At hub
C
N
REEL DIMENSIONS
40 mm min.
Access hole
At slot location
T
STH310N10F7-2, STH310N10F7-6
Package information
DocID024040 Rev 3
17/19
Table 10: Tape and reel mechanical data
Tape
Reel
Dim.
mm
Dim.
mm
Min.
Max.
Min.
Max.
A0
10.5
10.7
A
330
B0
15.7
15.9
B
1.5
D
1.5
1.6
C
12.8
13.2
D1
1.59
1.61
D
20.2
E
1.65
1.85
G
24.4
26.4
F
11.4
11.6
N
100
K0
4.8
5.0
T
30.4
P0
3.9
4.1
P1
11.9
12.1
Base quantity
1000
P2
1.9
2.1
Bulk quantity
1000
R
50
T
0.25
0.35
W
23.7
24.3
Revision history
STH310N10F7-2, STH310N10F7-6
18/19
DocID024040 Rev 3
5 Revision history
Table 11: Document revision history
Date
Revision
Changes
10-Dec-2012
1
Initial release. Part number(s) previously included in datasheet
ID02287
23-Jul-2013
2
Document status promoted from preliminary to
production data
Modified: IDSS and VGS value in table 4
Added: EAS value in table 2
Minor text changes
27-Nov-2014
3
Updated: H2PAK-6 package information.
Updated the title, features and description.
Minor text changes.
STH310N10F7-2, STH310N10F7-6
DocID024040 Rev 3
19/19
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