This is information on a product in full production.
STH310N10F7-2,
STH310N10F7-6
N-channel 100 V, 1.9 mΩ typ.,180 A, STripFET™ F7
Power MOSFETs in H2PAK-2 and H2PAK-6 packages
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Among the lowest RDS(on) on the market
Excellent figure of merit (FoM)
Low Crss/Ciss ratio for EMI immunity
High avalanche ruggedness
Description
These N-channel Power MOSFETs utilize
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
Table 1: Device summary
H2PAK-2 H2PAK-6
TAB TAB
1
2317