Double Differential Magneto Resistor FP 410 L (4 x 80) FM Dimensions in mm Features Typical applications * Double differential magneto resistor on same carrier * Accurate intercenter spacing * High operating temperature range * High output voltage * Compact construction * Available in strip form for automatic assembly * * * * Incremental angular encoders Detection of sense of rotation Detection of speed Detection of position Type Ordering Code FP 410 L (4x80) FM Q65410-L80E (taped) FP 410 L (4x80) FM Q65110-L80F (singular) Semiconductor Group 1 07.96 FP 410 L (4 x 80) FM The double differential magneto resistor assembly consists of two pairs of magneto resistors, (L-type InSb/NiSb semiconductor resistors whose resistance value can be magnetically controlled), which are fixed to a ferrite substrate. Contact to the magneto resistors is achieved using a copper/polyimide carrier film known as Micropack. The basic resistance of each of the magnetic resistors is 80 . The two series coupled pairs of magnetic resistors are actuated by an external magnetic field or can be biased by a permanent magnet and actuated by a soft iron target. Semiconductor Group 2 FP 410 L (4 x 80) FM Maximum ratings Parameter Symbol Value Unit Operating temperature TA Tstg Ptot VIN - 40 / + 175 C - 40 / + 185 C 1000 mW 8 V Storage temperature Power dissipation1) Supply voltage2) (B = 0.3 T) Thermal conductivity -attached to heatsink -in still air mW/K Gth case Gth A 20 2 Basic resistance (I 1 mA; B = 0 T) R01-3 R04-6 110...220 Center symmetry3) M RB/R0 6 % > 1.7 - Characteristics (TA = 25 C) Relative resistance change (R = R01-3, R04-6 at B = 0 T) B = 0.3 T4) B=1T Temperature coefficient B=0T B = 0.3 T B=1T >7 TCR - 0.16 - 0.38 - 0.54 1) Corresponding to diagram Ptot = f(Tcase) 2) Corresponding to diagram VIN = f(Tcase) M R 01 - 2 - R 02 - 3 = ------------------------------- x 100% for R01-2 > R02-3 M R 04 - 5 - R 05 - 6 = ------------------------------- x 100% for R04-5 > R05-6 3) R 01 - 2 R 04 - 5 4) 1 T = 1 Tesla = 104 Gauss Semiconductor Group 3 %/K %/K %/K FP 410 L (4 x 80) FM Max. power dissipation versus temperature Ptot = f(T), T = Tcase, TA Maximum supply voltage versus temperature VIN 1-3, 4-6 = f(T), B = 0.3 T Typical MR resistance versus temperature R01-3, 4-6 = f(TA), B = Parameter Typical MR resistance versus magnetic induction B R01-3, 4-6 = f(B), TA = 25 C Semiconductor Group 4