Semiconductor Group 1
PNP Silicon AF Transistors BC 327
BC 328
5.91
Type Marking Package1)
Pin Configuration
BC 327
BC 327-16
BC 327-25
BC 327-40
BC 328
BC 328-16
BC 328-25
BC 328-40
Q62702-C311
Q62702-C311-V3
Q62702-C311-V4
Q62702-C311-V2
Q62702-C312
Q62702-C312-V3
Q62702-C312-V4
Q62702-C312-V2
TO-92
123
Ordering Code
C B E
1) For detailed information see chapter Package Outlines.
High current gain
High collector current
Low collector-emitter saturation voltage
Complementary types: BC 337, BC 338 (NPN)
1
2
3
Semiconductor Group 2
BC 327
BC 328
Maximum Ratings
Parameter Symbol BC 327 Unit
Collector-emitter voltage VCE0 45 V
Collector-base voltage VCB0 50
Emitter-base voltage VEB0
Collector current ICmA
Base current IBmA
Total power dissipation, TC=66 ˚C Ptot mW
Junction temperature Tj˚C
Storage temperature range Tstg – 65 … + 150
Thermal Resistance
Junction - ambient Rth JA 200 K/W
Peak collector current ICM A
Junction - case1) Rth JC 135
Peak base current IBM
BC 328
25
30
5
800
100
625
150
1
200
Values
1) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
Semiconductor Group 3
BC 327
BC 328
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
DC current gain1)
I
C = 100 mA; VCE = 1 V BC 327/16; BC 328/16
BC 327/25; BC 328/25
BC 327/40; BC 328/40
I
C = 300 mA; VCE = 1 V BC 327/16; BC 328/16
BC 327/25; BC 328/25
BC 327/40; BC 328/40
hFE
100
160
250
60
100
170
160
250
350
250
400
630
VCollector-emitter breakdown voltage
I
C = 10 mA BC 327
BC 328
V(BR)CE0
45
25
nA
nA
µA
µA
Collector cutoff current
VCB = 25 V BC 328
VCB = 45 V BC 327
VCB = 25 V, TA = 150 ˚C BC 328
VCB = 45 V, TA = 150 ˚C BC 327
ICB0
100
100
10
10
UnitValuesParameter Symbol
min. typ. max.
DC characteristics
Collector-base breakdown voltage
I
C = 100 µABC 327
BC 328
V(BR)CB0
50
30
Emitter-base breakdown voltage
I
E = 10 µAV(BR)EB0 5––
V
Collector-emitter saturation voltage1)
I
C = 500 mA; IB = 50 mA VCEsat 0.7
Base-emitter saturation voltage1)
I
C = 500 mA; IB = 50 mA VBEsat ––2
nAEmitter cutoff current
VEB = 4 V IEB0 100
1) Pulse test: t300 µs, D 2%.
Semiconductor Group 4
BC 327
BC 328
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
MHzTransition frequency
I
C = 50 mA, VCE = 5 V, f = 20 MHz fT 200
UnitValuesParameter Symbol
min. typ. max.
AC characteristics
pFOutput capacitance
VCB = 10 V, f = 1 MHz Cobo –12
Input capacitance
VEB = 0.5 V, f = 1 MHz Cibo –60
Semiconductor Group 5
BC 327
BC 328
Total power dissipation Ptot =f(TA;TC)
Collector current IC = f (VBE)
VCE = 1 V
Permissible pulse load RthJA =f(tp)
Collector cutoff current ICB0 =f(TA)
VCB = 45 V
Semiconductor Group 6
BC 327
BC 328
Transition frequency fT=f(IC)
f = 20 MHz, TA= 25 ˚C
Base-emitter saturation voltage
VBEsat =f(IC)
hFE = 10
DC current gain hFE =f(IC)
VCE = 1 V
Collector-emitter saturation voltage
VCEsat =f(IC)
hFE = 10