APTC60DDAM45CT1G
APTC60DDAM45CT1G – Rev 0 March, 2009
www.microsemi.com 2
7
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VGS = 0V,VDS = 600V Tj = 25°C 250
IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 600V Tj = 125°C 500 µA
RDS(on) Drain – Source on Resistance VGS = 10V, ID = 24.5A 40 45 mΩ
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 3mA 2.1 3 3.9 V
IGSS Gate – Source Leakage Current VGS = ±20 V, VDS = 0V 100 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Ciss Input Capacitance 7.2
Coss Output Capacitance
VGS = 0V ; VDS = 25V
f = 1MHz 8.5 nF
Qg Total gate Charge 150
Qgs Gate – Source Charge 34
Qgd Gate – Drain Charge
VGS = 10V
VBus = 300V
ID = 49A 51
nC
Td(on) Turn-on Delay Time 21
Tr Rise Time 30
Td(off) Turn-off Delay Time 100
Tf Fall Time
Inductive Switching (125°C)
VGS = 10V
VBus = 400V
ID = 49A
RG = 5Ω 45
ns
Eon Turn-on Switching Energy 405
Eoff Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 10V ; VBus = 400V
ID = 49A ; RG = 5Ω 520
µJ
Eon Turn-on Switching Energy 658
Eoff Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 10V ; VBus = 400V
ID = 49A ; RG = 5Ω 635 µJ
Chopper SiC diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage 600 V
Tj = 25°C 100 400
IRM Maximum Reverse Leakage Current VR=600V Tj = 175°C 200 2000 µA
IF DC Forward Current Tc = 100°C 20 A
Tj = 25°C 1.6 1.8
VF Diode Forward Voltage IF = 20A Tj = 175°C 2 2.4 V
QC Total Capacitive Charge IF = 20A, VR = 300V
di/dt =1800A/µs 28 nC
f = 1MHz, VR = 200V 130
C Total Capacitance f = 1MHz, VR = 400V 100 pF