AP15T20GS-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement Lower Gate Charge Fast Switching Characteristics BVDSS RDS(ON) ID D RoHS Compliant & Halogen-Free 200V 250m 10A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. G D S TO-263(S) The TO-263 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 200 V VGS Gate-Source Voltage +20 V ID@TC=25 Continuous Drain Current, V GS @ 10V 10 A ID@TC=100 Continuous Drain Current, V GS @ 10V 6.1 A 26 A 62.5 W 1 IDM Pulsed Drain Current PD@TC=25 Total Power Dissipation TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) Data & specifications subject to change without notice 3 Value Unit 2 /W 40 /W 1 201202292 AP15T20GS-HF o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions VGS=0V, ID=250uA VGS=10V, ID=5A Min. Typ. Max. Units 200 - - 250 V m BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance 2 VGS=4.5V, ID=3A - - 260 m VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V VDS=10V, ID=5A - 20 - S gfs Forward Transconductance IDSS Drain-Source Leakage Current VDS=160V, VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=5A - 45 72 nC Qgs Gate-Source Charge VDS=160V - 5.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 15 - nC td(on) Turn-on Delay Time VDD=100V - 10 - ns tr Rise Time ID=5A - 10 - ns td(off) Turn-off Delay Time RG=3.3 - 37 - ns tf Fall Time VGS=10V - 11 - ns Ciss Input Capacitance VGS=0V - 1950 3120 pF Coss Output Capacitance VDS=25V - 100 - pF Crss Rg Reverse Transfer Capacitance f=1.0MHz - 65 - pF Gate Resistance f=1.0MHz - 1.5 3 Min. Typ. IS=5A, VGS=0V - - 1.3 V Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage trr Reverse Recovery Time IS=5A, VGS=0V, - 100 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 380 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP15T20GS-HF 30 16 10V 7.0V 6.0V 5.0V V G =4.0V 20 10V 7.0V 6.0V 5.0V V GS =4.0V o T C =150 C ID , Drain Current (A) ID , Drain Current (A) T C = 25 o C 10 12 8 4 0 0 0 4 8 12 16 0 20 4 8 12 16 20 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.8 1.6 I D =5A V GS =10V I D =1mA 2.4 Normalized RDS(ON) Normalized BVDSS (V) 1.4 1.2 1 2 1.6 1.2 0.8 0.8 0.4 0.6 0 -50 0 50 100 150 -50 o 0 50 100 150 o T j , Junction Temperature ( C) T j , Junction Temperature ( C ) Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature 2 8 I D =250uA Normalized VGS(th) (V) 1.6 IS(A) 6 4 T j =150 o C T j =25 o C 1.2 0.8 2 0.4 0 0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C ) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP15T20GS-HF f=1.0MHz 2400 I D =5A V DS =160V 10 2000 8 C iss 1600 C (pF) VGS , Gate to Source Voltage (V) 12 6 1200 4 800 2 400 C oss C rss 0 0 0 10 20 30 40 50 60 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 10 Normalized Thermal Response (Rthjc) 100 100us ID (A) Operation in this area limited by RDS(ON) 1ms 1 10ms 100ms 1s DC T c =25 o C Single Pulse 0 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 0.1 1 10 100 1000 0.00001 0.0001 0.001 V DS , Drain-to-Source Voltage (V) 0.01 0.1 1 10 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance 12 VG ID , Drain Current (A) 10 QG 8 10V QGS 6 QGD 4 2 Charge Q 0 25 50 75 100 T C , Case Temperature ( 125 o 150 C) Fig 11. Maximum Continuous Drain Current v.s. Case Temperature Fig 12. Gate Charge Waveform 4