GATE ALGO BACKSIDE CONTACT SAND 0 ARE SYMMETRICAL HTL 2.021 10.833) ALL DIMENSIONS IN INCHES (ALL DIMENSIONS IN MILLIMETERS) n-channel JFET = Small Signal Amplifiers = Choppers Voltage-Controlled Resistors TYPE PACKAGE Single TO-18 Dual TO-71 Single TO-92 Single TO-92 Lead-form Single Chip PERFORMANCE CURVES (25C unless otherwise noted) Output Characteristic Output Characteristic Ip DRAIN CURRENT {mA} 0 24 6 Vps DRAIN-SOURCE VOLTAGE {VOLTS} 8 10 12 14 16 18 20 Transfer Characteristics 2s 2 a mf & (v4) LN3ZHYND NIV 41 2 wo 2 LS) t -20C 1000 -O8 06 -O4 0.2 o Vas GATE-SOURCE VOLTAGE (VOLTS) Transconductance Characteristics Vps=15V fa 1kHz 0.4 Vas GATE-SOURCE VOLTAGE (VOLTS) a JONVLONGNOISNVHL GHYMYOS 9S Ip DRAIN CURRENT (mA} 0 2 4 6 8B 10 12 14 16 18 20 Vps DRAIN-SOURCE VOLTAGE (VOLTS) Transfer Characteristics 08 0.6 a4 (vw) LNaYYND Nivea d} 0.2 1.8 -12 ~0.8 ~0.4 9 Vas GATE-SOURCE VOLTAGE (VOLTS) Transconductance Characteristics 2000 Vps = 15V 3800 f= 1kHz 1600 7400 1200 1000 gsoyun) BONVLONONOISNVYL GHYMUOS 36 800 600 400 200 1.6 Vas GATE-SOURCE VOLTAGE (VOLTS) 1.2 -0.8 -0.4 a Ip DRAIN CURRENT (mA) BENEFITS: e@ Low Noise NF < 1 dB at 1 kHz @ Operation From Low Power Supply Voltages, V asg{oft) < 1 V (2N4338) e High Off-isolation As a Switch Iploft) < 50 pA @ High Input Impedance PRINCIPAL DEVICES 2N3368-70, 2N3436-8, 2N3458-60, 2N4338-41, VCR4N 2N5196-9, U231-5, 2N5545-47 J201-203, J204, PN4302-04 J201-18 - 203-18, J204-18,, All of the above PN4302-18 - 4304-18 Output Characteristic 2.0 1.8 16 14 1.2 1.0 0.8 06 04 0.2 0 2 Vps DRAIN-SOURCE VOLTAGE (VOLTS) 4 6 8 10 12 14 16 18 20 Transfer Characteristics Vps= 15 V (vw) IN3SHHND NIvuG ~ 1 28 -24 -2.0 -16 -1.2 -0.8 -0.4 9 Vas GATE-SOURCE VOLTAGE (VOLTS) Transconductance Characteristics 2800 2400 2000 1606 (soquin BONY LONGNOISNVHL CHYYMUOS 36 1200 425C it 400 -28 -24 -2.0 -16 -12 -G68 -04 a Vas ~ GATE-SOURCE VOLTAGE (VOLTS) 5-19 1979 Siliconix incorporated dN xXIUOSI NP PERFORMANCE CURVES (Cont'd) (25C unless otherwise noted) Drain Current and Transconductance Output Characteristic vs Gate-Source Cutoff Voitage ON Resistance & Output Conductance vs Gate-Source Cutoff Voitage iconix 5.0 =z 20 4000 # 50 750 q Vesiott) @ lp * nA _ Qos @ Vg = 15 V. Veg = 0 45 E Vos = 20V 3 Ds @lp 5 ie uA, Vas =0 = 2 Vgs=0 GS{oft) @ Vog * 20V, 3 4.0 GS S 6 @ 6 Tce t=tkhe 3200 & = 4 = TDA 100 a a 535 2 a2 a a = 2 3.0 Z 12 24002 30 450 & < 28 > Pe 22 B G 25 6 & 3 a z Fe 83 > z? ge 1600 2 20 300 2 S15 @ G2 a 2 35 6 210 E Zo z g o4 a0 & 9 10 150 I = yn 05 a a z 0 2 4 6 8 10 12 14 16 18 20 o 8 0 -1 -2 -3 -4 -5 -6 -7 ~-8 0 -2 4 -6 -8 Vos DRAIN-SOURCE VOLTAGE (VOLTS) Vgs{ott) GATE SOURCE CUTOFF VOLTAGE (VOLTS) VGS{ott) GATE-SOURCE CUTOFF VOLTAGE (VOLTS) ON Resistance vs Ambient Temperature Common-Source Output Conductance Transfer Characteristics vs Drain Current 10 15 14 = 18V Vos =20V f=1 13 1.2 Ww Vestott) = 2.8V 4.0 09 as ) RELATIVE TO 25C VALUE (vw) IN3HYND NIVHd ~ G1 s O7 Qos OUTPUT CONDUCTANCE {ymhos) "DSI 0.6 0.1 05 6 5 4 -3 -2 -1 9 0.01 01 10 10 100 ~55 -18 25 65 105 145 Vas GATE-SOURCE VOLTAGE (VOLTS) Ip -- DRAIN CURRENT (mA) T TEMPERATURE (C) Common-Source Forward Transconductance vs Drain Current Common-Source Capacitances vs Transconductance Characteristics Gate-Source Voltage wW g 8 Sie 3 Oo 3 x Vps = 20 V VGS(off) @ Ip = 1nA f=t =15 f= TkHe 3 (souwirt) JONVLONGNOISNV HL GUYMYOd 2500 2000 1500 -20C. +25 | 1000 CAPACITANCE (pF) 3 500 1 Sts FORWARD TRANSCONDUCTANCE (umhos) g 8 6 5 -4 3 -2 -1 9 0 4 -& -12 ~16 -20 0.01 0.1 1.0 10 100 Vs GATE-SOURCE VOLTAGE (VOLTS) Vos GATE-SOURCE VOLTAGE (VOLTS) Ip DRAIN CURRENT {mA) Gate Operating Current vs Drain-Gate Voltage Equivalent Input Noise Voltage and Gate Currents vs Ambient Temperature Noise Current vs Frequency Ee 1K sv 10-13 l@ss @ Vas = -30 V, Vps = 0 _ Vos = 10 IG @ Vpg = 20 V, Ip = 100nA B Ipgg = 0.38 mA 3! I = > 2 $ z s z 5 100 14 R = a < oO 5 cs Ht HH S Yi -o1 2 g + in @ Ip = 0.1 Ings 2 oO w a +H HE 2 a rE 8 in @ 1p = Ipgs a S Ss 10 oO 19-15 & 1 z = i > 2 b = cy en @ !p = Iss: z| it ~~ ey Ip = 0.11 1 10716 o 1% 2 30 40 50 60 10 100 1K toK 100K T TEMPERATURE (C} Vpg ~ DRAIN-GATE VOLTAGE (VOLTS) { FREQUENCY {Hz} 1979 Siliconix incorporated 5-20