Copyright 2002 Semicoa Semiconductors, Inc.
Rev. F 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2
www.SEMICOA.com
2N4150S
Silicon NPN Transisto
r
Data Sheet
Description
Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N4150SJ)
• JANTX level (2N4150SJX)
• JANTXV level (2N4150SJV)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
• Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
• General purpose
• Low power, High voltage
• NPN silicon transistor
Features
• Hermetically sealed TO-39 metal can
• Also available in chip configuration
• Chip geometry 3101
• Reference document:
MIL-PRF-19500/394
Benefits
• Qualification Levels: JAN, JANTX, and
JANTXV
• Radiation testing available
Absolute Maximum Ratings TC = 25°C unless otherwise specified
Parameter Symbol Rating Unit
Collector-Emitter Voltage VCEO 70
Volts
Collector-Base Voltage VCBO 100
Volts
Emitter-Base Voltage VEBO 10
Volts
Collector Current, Continuous IC 10
A
Power Dissipation, TA = 25°C
Derate linearly above 25°C PT 1
5.7
W
mW/°C
Power Dissipation, TC = 25°C
Derate linearly above 100°C PT 5
50
W
mW/°C
Thermal Resistance RθJA
RθJC
.175
.020 °C/W
Operating Junction Temperature
Storage Temperature
TJ
TSTG -65 to +200 °C
Copyright 2002 Semicoa Semiconductors, Inc.
Rev. F 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2
www.SEMICOA.com
2N4150S
Silicon NPN Transisto
r
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Collector-Emitter Breakdown Voltage V(BR)CEO I
C = 100 mA 70 Volts
Collector-Base Cutoff Current ICBO1
ICBO2
VCB = 100 Volts
VCB = 80 Volts,
10
100
µA
nA
Collector-Emitter Cutoff Current ICEO V
CE = 60 Volts 10 µA
Collector-Emitter Cutoff Current
ICEX1
ICEX2
VCE = 60Volts, VEB= .5Volts
VCE = 60Volts, VEB= .5Volts,
TA = 150°C
10
100
µA
Emitter-Base Cutoff Current IEBO1
IEBO2
VEB = 7 Volts
VEB = 5 Volts
10
100
µA
nA
On Characteristics Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Parameter Symbol Test Conditions Min Typ Max Units
DC Current Gain
hFE1
hFE2
hFE3
hFE4
IC = 1 A, VCE = 5 Volts
IC = 5 A, VCE = 5 Volts
IC = 10 A, VCE = 5 Volts
IC = 5 A, VCE = 5 Volts
TA = -55°C
50
40
10
20
200
120
Base-Emitter Saturation Voltage VBEsat1
VBEsat2
IC = 5 A, IB = 500 mA
IC = 10 A, IB = 1 A
1.5
2.5 Volts
Collector-Emitter Saturation Voltage VCEsat1
VCEsat2
IC = 5 A, IB = 500 mA
IC = 10 A, IB = 1 A
0.6
2.5 Volts
Dynamic Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio |hFE| VCE = 10 Volts, IC = 200 mA,
f = 10 MHz 1.5 7.5
Small Signal Short Circuit Forward
Current Transfer Ratio hFE VCE = 5 Volts, IC = 50 mA,
f = 1 kHz 40 160
Open Circuit Output Capacitance COBO VCB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz 350
pF
Switching Characteristics
Delay Time
Rise Time
td
tr IC = 5 A, IB = 500 mA, 50
500 ns
Storage Time
Fall Time
ts
tf IC = 5 A, IB1= -IB2 = 500 mA 1.5
500
µs
ns