IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package TIP29, TIP29A, TIP29B, TIP29C TIP30, TIP30A, TIP30B, TIP30C Boca Semiconductor Corp. TIP29, 29A, 29B, 29C TIP30, 30A, 30B, 30C BSC NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 4 1 2 C E F K All dim insions in m m . L N O 1 2 3 O A H B J D G M DIM M IN. A B C D E F G H J K L M N O 14.42 9.63 3.56 3 M A X. 16.51 10.67 4.83 0.90 1.15 1.40 3.75 3.88 2.29 2.79 2.54 3.43 0.56 12.70 14.73 2.80 4.07 2.03 2.92 31.24 DE G 7 ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current Total power dissipation up to TC = 25C Junction temperature Collector-emitter saturation voltage IC = 1 A; IB = 125 mA D.C. current gain IC = 1 A; VCE = 4 V VCBO VCEO IC Ptot Tj 29 30 max. 40 max. 40 max. max. max. VCEsat max. 0.7 hFE min. max. 15 75 RATINGS (at TA=25C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) VCBO VCEO 29 30 max. 40 max. 40 http://www.bocasemi.com Continental Device India Limited Data Sheet 29A 29B 30A 30B 60 80 60 80 1.0 30 150 29C 30C 100 100 V V A W C V 29A 29B 29C 30A 30B 30C 60 80 100 60 80 100 V V page: 1 Page 1 of 3 TIP29, TIP29A, TIP29B, TIP29C TIP30, TIP30A, TIP30B, TIP30C Emitter-base voltage (open collector) Collector current Collector current (Peak) Base current Total power dissipation upto TC=25C Derate above 25C Total power dissipation upto T A=25C Derate above 25C Junction temperature Storage temperature THERMAL RESISTANCE From junction to ambient From junction to case VEBO IC ICM IB Ptot Ptot Tj T stg max. max. max. max. max. max. max. max. max. Rth j-a Rth j-c CHARACTERISTICS Tamb = 25C unless otherwise specified Collector cutoff current IB = 0; VCE = 30V IB = 0; VCE = 60V VEB = 0; VCE = V CEO Emitter cut-off current IC = 0; VEB = 5 V Breakdown voltages IC = 30 mA; IB = 0 IC = 1 mA; IE = 0 IE = 1 mA; IC = 0 Saturation voltages IC = 1 A; IB = 125 mA Base emitter on voltage IC = 1 A; VCE = 4 V D.C. current gain IC = 0.2 A; VCE = 4 V 29 30 ICEO ICEO ICES max. 0.3 max. - max. IEBO max. VCEO(sus)* min. 40 VCBO min. 40 VEBO min. IC = 1 A; VCE = 4 V Small-signal current gain IC = 0.2A; VCE = 10V; f = 1 KHz Transition frequency IC = 0.2A; VCE = 10V; f = 1 MHz 5.0 1.0 3.0 0.4 30 0.24 2 0.016 150 -65 to +150 V A A A W W/C W W/C C C 62.5 4.167 C/W C/W 29A 29B 29C 30A 30B 30C 0.3 - - 0.3 0.2 - 0.3 1.0 60 60 mA mA mA mA 80 80 100 100 5.0 V V V VCEsat* max. 0.7 V VBE(on)* max. 1.3 V hFE* min. 40 hFE* min. max. 15 75 hfe min. 20 fT (2) min. 3 MHz * Pulse test: pulse width 300 s; duty cycle 2%. (2) fT = |hfe |* ftest . http://www.bocasemi.com Continental Device India Limited Data Sheet page: 2 Page 2 of 3