24 GHz to 34 GHz, GaAs, MMIC,
Subharmonic SMT Mixer
Data Sheet HMC798ALC4
Rev. 0 Document Feedback
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Technical Support www.analog.com
FEATURES
Single positive supply: 5 V at 97 mA
Conversion loss: 10 dB typical at 24 GHz to 30 GHz,
10.5 dB typical at 30 GHz to 34 GHz (upconverter)
Input IP3: 17.5 dBm typical at 24 GHz to 30 GHz,
20 dBm typical at 30 GHz to 34 GHz (upconverter)
2 × LO to RF isolation: 36 dB typical at 30 GHz to 34 GHz
Wide IF bandwidth: dc to 4 GHz
LO drive level: 4 dBm input
Subharmonically pumped 2 × LO
RoHS compliant, 24-terminal, 3.90 mm × 3.90 mm, ceramic
LCC package
APPLICATIONS
Microwave and very small aperture terminal (VSAT) radios
Test equipment
Point to point radios
Satellite communications (SATCOM)
Military electronic warfare (EW), electronic countermeasure
(ECM), and command, control, communications and
intelligence (C3I)
FUNCTIONAL BLOCK DIAGRAM
GND
NIC
NIC
GND
IF
GND GND
PACKAGE
BASE
GND
GND
LO
GND
NIC
GND
GND
RF
GND
NIC
VCC
GND GND
NIC
NIC
NIC
NIC
GND
13
14
15
16
17
18
6
5
4
3
2
1
19
20
21
22
23
24
12
11
10
9
8
7
HMC798ALC4
16785-001
Figure 1.
GENERAL DESCRIPTION
The HMC798ALC4 is a 24 GHz to 34 GHz subharmonically
pumped (×2) MMIC mixer with an integrated LO amplifier housed
in a leadless, RoHS compliant LCC package. The HMC798ALC4
can be used as an upconverter or downconverter between 24 GHz
and 34 GHz.
The 2 × LO to radio frequency (RF) isolation is typically 30 dB
in a 24 GHz to 30 GHz frequency range and 36 dB in a 30 GHz
to 34 GHz frequency range, eliminating the need for additional
filtering. The LO amplifier is single bias at a 5 V dc with a
typical 4 dBm LO drive level requirement The HMC798ALC4
eliminates the need for wire bonding, allowing use of surface-
mount technology (SMT) manufacturing techniques.
HMC798ALC4 Data Sheet
Rev. 0 | Page 2 of 26
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description ......................................................................... 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
Absolute Maximum Ratings ............................................................ 4
Thermal Resistance ...................................................................... 4
ESD Caution .................................................................................. 4
Pin Configuration and Function Descriptions ............................. 5
Interface Schematics..................................................................... 5
Typical Performance Characteristics ............................................. 6
Upconverter Performance ........................................................... 6
Downconverter Performance ................................................... 10
Isolation and Return Loss ......................................................... 18
IF Bandwidth—Downconverter, Upper Sideband ................. 20
IF Bandwidth—Downconverter, Lower Sideband ................. 21
Spurious and Harmonics Performance ................................... 22
Theory of Operation ...................................................................... 23
Applications Information .............................................................. 24
Typical Application Circuit ....................................................... 24
Evaluation PCB Information .................................................... 24
Soldering Information and Recommended Land Pattern .... 24
Outline Dimensions ....................................................................... 26
Ordering Guide .......................................................................... 26
REVISION HISTORY
6/2018—Revision 0: Initial Versi on
Data Sheet HMC798ALC4
Rev. 0 | Page 3 of 26
SPECIFICATIONS
VCC = 5 V, TA = 25°C, upconverter (IFIN) = 1 GHz at −10 dBm, LO = 4 dBm, upper side band. All measurements performed as an
upconverter, unless otherwise noted, on the evaluation printed circuit board (PCB).
Table 1.
Parameter Symbol Test Conditions/Comments Min Typ Max Unit
FREQUENCY RANGE
RF 24 34 GHz
LO Input 12 18 GHz
IF DC 4 GHz
SUPPLY CURRENT ICC 97 125 mA
SUPPLY VOLTAGE VCC 4.75 5 5.25 V
LO DRIVE LEVELS 0 4 6 dBm
24 GHz to 30 GHz PERFORMANCE
Upconverter IFIN
Conversion Loss 10 12.5 dB
Input Third-Order Intercept IP3 12.5 17.5 dBm
Input 1 dB Compression Point
P1dB
6
dBm
Downconverter IF
Conversion Loss 11 dB
Input Third-Order Intercept IP3 23 dBm
Input Second-Order Intercept IP2 50 dBm
Input 1 dB Compression Point P1dB 14 dBm
Isolation
RF to IF 30 dB
2 × LO to RF 22 31 dB
2 × LO to IF 26.5 dB
30 GHz to 34 GHz PERFORMANCE
Upconverter IFIN
Conversion Loss 10.5 13.5 dB
Input Third-Order Intercept IP3 15 20 dBm
Input 1 dB Compression Point
P1dB
9
dBm
Downconverter IF
Conversion Loss 10.5 dB
Input Third-Order Intercept IP3 25 dBm
Input Second-Order Intercept IP2 43 dBm
Input 1 dB Compression Point P1dB 15 dBm
Isolation
RF to IF 32 dB
2 × LO to RF 25 36 dB
2 × LO to IF 27 dB
HMC798ALC4 Data Sheet
Rev. 0 | Page 4 of 26
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter Rating
RF Input Power 13 dBm
LO Input Power
10 dBm
IF Input Power 13 dBm
IF Source or Sink Current 3 mA
VCC Supply Voltage 5.5 V
Peak Reflow Temperature 260°C
Maximum Junction Temperature (TJ) 175°C
Lifetime at Maximum (T
J
)
1 × 10
6
hrs
Moisture Sensitivity Level (MSL)1 MSL3
Continuous Power Dissipation, PDISS (TA =
85°C, Derate 8.33 mW/°C Above 85°C)
750 mW
Operating Temperature Range −40°C to +85°C
Storage Temperature Range −65°C to +150°C
Lead Temperature Range −65°C to +150°C
Electrostatic Discharge (ESD) Sensitivity
Human Body Model (HBM) 250 V
Field Induced Charged Device Model
(FICDM)
250 V
1 Based on IPC/JEDEC J-STD-20 MSL classifications.
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
THERMAL RESISTANCE
Thermal performance is directly linked to printed circuit board
(PCB) design and operating environment. Careful attention to
PCB thermal design is required.
θJA is the natural convection junction to ambient thermal
resistance measured in a one cubic foot sealed enclosure. θJC is
the junction to case thermal resistance.
Table 3. Thermal Resistance
Package Type θJA θJC Unit
E-24-11 120 119 °C/W
1 See JEDEC Standard JESD51-2 for additional information on optimizing the
thermal impedance (PCB with 3 × 3 vias).
ESD CAUTION
Data Sheet HMC798ALC4
Rev. 0 | Page 5 of 26
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
13
1
3
4
2
7
GND
NIC
NIC
GND
5
6
IF
GND GND
14 GND
15 LO
16 GND
17 NIC
18 GND
GND
8
RF
9
GND
10
NIC
11
VCC
12 19
GND GN
D
20
NIC
21
NIC
22
NIC
23
NIC
24
GN
D
NOTES
1. NOT INTERNALLY CONNECTED. THESE PINS
CAN BE CONNECTED TO RF AND DC GROUND.
PERFORMANCE IS NOT AFFECTED.
2. EXPOSED PAD. THE EXPOSED PAD MUST BE
CONNECTED TO RF AND DC GROUND.
16785-002
HMC798ALC4
TOP VIEW
(Not to Scale)
Figure 2. Pin Configuration
Table 4. Pin Function Descriptions
Pin No. Mnemonic Description
1, 4, 6, 7, 9, 12,
13, 14, 16,
18, 19, 24
GND Ground. These pins and package bottom must be connected to RF and dc ground.
2, 3, 10, 17, 20,
21, 22, 23
NIC Not Internally Connected. These pins can be connected to RF and dc ground. Performance is not affected.
5 IF
Intermediate Frequency Port. This pin is dc-coupled. For applications not requiring operation to dc, dc block
this port externally using a series capacitor of a value chosen to pass the necessary IF frequency range. For
operation to dc, this pin must not source or sink more than 3 mA of current or die malfunction and possible
die failure may result.
8 RF Radio Frequency Port. This pin is dc-coupled and matched to 50 Ω.
11 VCC Power Supply for the LO Amplifier.
15 LO Local Oscillator Port. This pin is ac-coupled and matched to 50 Ω.
25 EPAD Exposed Pad. The exposed pad must be connected to RF and dc ground.
INTERFACE SCHEMATICS
G
ND
16785-003
Figure 3. GND Interface Schematic
LO
16785-004
Figure 4. LO Interface Schematic
I
F
16785-005
Figure 5. IF Interface Schematic
RF
16785-006
Figure 6. RF Interface Schematic
HMC798ALC4 Data Sheet
Rev. 0 | Page 6 of 26
TYPICAL PERFORMANCE CHARACTERISTICS
UPCONVERTER PERFORMANCE
IFIN = 1 GHz, Upper Sideband
0
–20
–15
–10
–5
23 24 25 27 29 3126 28 30 32 33 34 35
CONVE RS IO N GAIN ( dB)
RF FREQ UE NCY ( GHz)
T
A
= +85°C
T
A
= +25°C
T
A
= –40° C
16785-007
Figure 7. Conversion Gain vs. RF Frequency at Various Temperatures,
LO = 4 dBm
30
0
5
10
20
15
25
23 24 25 27 29 31
26 28 30 32 33 34 35
INPUT I P 3 ( dBm)
RF FREQ UE NCY ( GHz)
T
A
= +85°C
T
A
= +25°C
T
A
= –40° C
16785-008
Figure 8. Input IP3 vs. RF Frequency at Various Temperatures,
LO = 4 dBm
20
0
5
10
15
23 24 25 27 29 3126 28 30 32 33 34 35
INPUT P1dB (dBm)
RF FREQ UE NCY ( GHz)
TA = +85°C
TA = +25°C
TA = –40° C
16785-009
Figure 9. Input P1dB vs. RF Frequency at Various Temperatures,
LO = 4 dBm
0
–20
–15
–10
–5
23 24 25 27 29 3126 28 30 32 33 34 35
CONVE RS IO N GAIN ( dB)
RF FREQ UE NCY ( GHz)
LO = 6dBm
LO = 4dBm
LO = 2dBm
16785-010
Figure 10. Conversion Gain vs. RF Frequency at Various LO Power Levels,
TA = 25°C
30
0
5
10
20
15
25
23 24 25 27 29 3126 28 30 32 33 34 35
INPUT I P 3 ( dBm)
RF FREQ UE NCY ( GHz)
LO = 6dBm
LO = 4dBm
LO = 2dBm
16785-011
Figure 11. Input IP3 vs. RF Frequency at Various LO Power Levels,
TA = 25°C
20
0
5
10
15
23 24 25 27 29 3126 28 30 32 33 34 35
INPUT P1dB (dBm)
RF FREQ UE NCY ( GHz)
LO = 6dBm
LO = 4dBm
LO = 2dBm
16785-012
Figure 12. Input P1dB vs. RF Frequency at Various LO Power Levels,
TA = 25°C
Data Sheet HMC798ALC4
Rev. 0 | Page 7 of 26
IFIN = 1 GHz, Lower Sideband
0
–20
–15
–10
–5
23 24 25 27 29 3126 28 30 32 33 34 35
CONVE RS IO N GAIN ( dB)
RF FREQ UE NCY ( GHz)
T
A
= +85°C
T
A
= +25°C
T
A
= –40° C
16785-013
Figure 13. Conversion Gain vs. RF Frequency at Various Temperatures,
LO = 4 dBm
30
0
5
10
20
15
25
23 24 25 27 29 3126 28 30 32 33 34 35
INPUT I P 3 ( dBm)
RF FREQ UE NCY ( GHz)
T
A
= +85°C
T
A
= +25°C
T
A
= –40° C
16785-014
Figure 14. Input IP3 vs. RF Frequency at Various Temperatures,
LO = 4 dBm
20
0
5
10
15
23 24 25 27 29 3126 28 30 32 33 34 35
INP UT P1d B ( dBm)
RF FREQ UE NCY ( GHz)
T
A
= +85°C
T
A
= +25°C
T
A
= –40° C
16785-015
Figure 15. Input P1dB vs. RF Frequency at Various Temperatures,
LO = 4 dBm
0
–20
–15
–10
–5
23 24 25 27 29 3126 28 30 32 33 34 35
CONVE RS IO N GAI N ( dB)
RF FREQ UE NCY ( GHz)
LO = 6dBm
LO = 4dBm
LO = 2dBm
16785-016
Figure 16. Conversion Gain vs. RF Frequency at Various LO Power Levels,
TA = 25°C
30
0
5
10
20
15
25
23 24 25 27 29 3126 28 30 32 33 34 35
INP UT IP 3 ( dBm)
RF FREQ UE NCY ( GHz)
LO = 6dBm
LO = 4dBm
LO = 2dBm
16785-017
Figure 17. Input IP3 vs. RF Frequency at Various LO Power Levels,
TA = 25°C
20
0
5
10
15
23 24 25 27 29 3126 28 30 32 33 34 35
INP UT P1d B ( dBm)
RF FREQ UE NCY ( GHz)
LO = 6dBm
LO = 4dBm
LO = 2dBm
16785-018
Figure 18. Input P1dB vs. RF Frequency at Various LO Power Levels,
TA = 25°C
HMC798ALC4 Data Sheet
Rev. 0 | Page 8 of 26
IFIN = 3.75 GHz, Upper Sideband
0
–20
–15
–10
–5
23 24 25 27 29 3126 28 30 32 33 34 35
CONVE RS IO N GAIN ( dB)
RF FREQ UE NCY ( GHz)
T
A
= +85°C
T
A
= +25°C
T
A
= –40° C
16785-019
Figure 19. Conversion Gain vs. RF Frequency at Various Temperatures,
LO = 4 dBm
30
0
5
10
20
15
25
23 24 25 27 29 3126 28 30 32 33 34 35
INPUT I P 3 ( dBm)
RF FREQ UE NCY ( GHz)
T
A
= +85°C
T
A
= +25°C
T
A
= –40° C
16785-020
Figure 20. Input IP3 vs. RF Frequency at Various Temperatures,
LO = 4 dBm
20
0
5
10
15
23 24 25 27 29 3126 28 30 32 33 34 35
INPUT P1dB (dBm)
RF FREQ UE NCY ( GHz)
T
A
= +85°C
T
A
= +25°C
T
A
= –40° C
16785-021
Figure 21. Input P1dB vs. RF Frequency at Various Temperatures,
LO = 4 dBm
0
–20
–15
–10
–5
23 24 25 27 29 3126 28 30 32 33 34 35
CONVE RS IO N GAIN ( dB)
RF FREQ UE NCY ( GHz)
LO = 6dBm
LO = 4dBm
LO = 2dBm
16785-022
Figure 22. Conversion Gain vs. RF Frequency at Various LO Power Levels,
TA = 25°C
30
0
5
10
20
15
25
23 24 25 27 29 3126 28 30 32 33 34 35
INPUT I P 3 ( dBm)
RF FREQ UE NCY ( GHz)
LO = 6dBm
LO = 4dBm
LO = 2dBm
16785-023
Figure 23. Input IP3 vs. RF Frequency at Various LO Power Levels,
TA = 25°C
20
0
5
10
15
23 24 25 27 29 3126 28 30 32 33 34 35
INPUT P1dB (dBm)
RF FREQ UE NCY ( GHz)
LO = 6dBm
LO = 4dBm
LO = 2dBm
16785-024
Figure 24. Input P1dB vs. RF Frequency at Various LO Power Levels,
TA = 25°C
Data Sheet HMC798ALC4
Rev. 0 | Page 9 of 26
IFIN = 3.75 GHz, Lower Sideband
0
–20
–15
–10
–5
23 24 25 27 29 3126 28 30 32 33 34 35
CONVE RS IO N GAIN ( dB)
RF FREQ UE NCY ( GHz)
T
A
= +85°C
T
A
= +25°C
T
A
= –40° C
16785-025
Figure 25. Conversion Gain vs. RF Frequency at Various Temperatures,
LO = 4 dBm
30
0
5
10
20
15
25
23 24 25 27 29 3126 28 30 32 33 34 35
INPUT I P 3 ( dBm)
RF FREQ UE NCY ( GHz)
T
A
= +85°C
T
A
= +25°C
T
A
= –40° C
16785-026
Figure 26. Input IP3 vs. RF Frequency at Various Temperatures,
LO = 4 dBm
20
0
5
10
15
23 24 25 27 29 3126 28 30 32 33 34 35
INPUT P1dB (dBm)
RF FREQ UE NCY ( GHz)
T
A
= +85°C
T
A
= +25°C
T
A
= –40° C
16785-027
Figure 27. Input P1dB vs. RF Frequency at Various Temperatures,
LO = 4 dBm
0
–20
–15
–10
–5
23 24 25 27 29 31
26 28 30 32 33 34 35
CONVE RS IO N GAIN ( dB)
RF FREQ UE NCY ( GHz)
LO = 6dBm
LO = 4dBm
LO = 2dBm
16785-028
Figure 28. Conversion Gain vs. RF Frequency at Various LO Power Levels,
TA = 25°C
30
0
5
10
20
15
25
23 24 25 27 29 3126 28 30 32 33 34 35
INPUT I P 3 ( dBm)
RF FREQ UE NCY ( GHz)
LO = 6dBm
LO = 4dBm
LO = 2dBm
16785-029
Figure 29. Input IP3 vs. RF Frequency at Various LO Power Levels,
TA = 25°C
20
0
5
10
15
23 24 25 27 29 3126 28 30 32 33 34 35
INPUT P1dB (dBm)
RF FREQ UE NCY ( GHz)
LO = 6dBm
LO = 4dBm
LO = 2dBm
16785-030
Figure 30. Input P1dB vs. RF Frequency at Various LO Power Levels,
TA = 25°C
HMC798ALC4 Data Sheet
Rev. 0 | Page 10 of 26
DOWNCONVERTER PERFORMANCE
IF = 1 GHz, Upper Sideband (Low-Side LO)
0
–20
–15
–10
–5
23 24 25 27 29 3126 28 30 32 33 34 35
CONVE RS IO N GAIN ( dB)
RF FREQ UE NCY ( GHz)
T
A
= +85°C
T
A
= +25°C
T
A
= –40° C
16785-031
Figure 31. Conversion Gain vs. RF Frequency at Various Temperatures,
LO = 4 dBm
30
0
5
10
20
15
25
23 24 25 27 29 3126 28 30 32 33 34 35
INPUT I P 3 ( dBm)
RF FREQ UE NCY ( GHz)
T
A
= +85°C
T
A
= +25°C
T
A
= –40° C
16785-032
Figure 32. Input IP3 vs. RF Frequency at Various Temperatures,
LO = 4 dBm
0
–20
–15
–10
–5
23 24 25 27 29 3126 28 30 32 33 34 35
CONVE RS IO N GAIN ( dB)
RF FREQ UE NCY ( GHz)
LO = 6dBm
LO = 4dBm
LO = 2dBm
16785-034
Figure 33. Conversion Gain vs. RF Frequency at Various LO Power Levels,
TA = 25°C
30
0
5
10
20
15
25
23 24 25 27 29 31
26 28 30 32 33 34 35
INPUT I P 3 ( dBm)
RF FREQ UE NCY ( GHz)
LO = 6dBm
LO = 4dBm
LO = 2dBm
16785-035
Figure 34. Input IP3 vs. RF Frequency at Various LO Power Levels,
TA = 25°C
Data Sheet HMC798ALC4
Rev. 0 | Page 11 of 26
Downconverter IP2 and P1dB, Upper Sideband (Low-Side LO)
80
70
60
50
40
30
20
10
023 24 25 27 29 3126 28 30 32 33 34 35
INPUT I P 2 ( dBm)
RF FREQ UE NCY ( GHz)
T
A
= +85°C
T
A
= +25°C
T
A
= –40° C
16785-135
Figure 35. Input IP2 vs. RF Frequency at Various Temperatures,
LO = 4 dBm
20
0
5
10
15
23 24 25 27 29 3126 28 30 32 33 34 35
INPUT P1dB (dBm)
RF FREQ UE NCY ( GHz)
T
A
= +85°C
T
A
= +25°C
T
A
= –40° C
16785-033
Figure 36. Input P1dB vs. RF Frequency at Various Temperatures,
LO = 4 dBm
80
70
60
50
40
30
20
10
023 24 25 27 29 31
26 28 30 32 33 34 35
INPUT I P 2 ( dBm)
RF FREQ UE NCY ( GHz)
16785-137
LO = 6dBm
LO = 4dBm
LO = 2dBm
Figure 37. Input IP2 vs. RF Frequency at Various LO Power Levels,
TA = 25°C
20
0
5
10
15
23 24 25 27 29 31
26 28 30 32 33 34 35
INPUT P1dB (dBm)
RF FREQ UE NCY ( GHz)
LO = 6dBm
LO = 4dBm
LO = 2dBm
16785-036
Figure 38. Input P1dB vs. RF Frequency at Various LO Power Levels,
TA = 25°C
HMC798ALC4 Data Sheet
Rev. 0 | Page 12 of 26
IF = 1 GHz, Lower Sideband (High-Side LO)
0
–20
–15
–10
–5
23 24 25 27 29 31
26 28 30 32 33 34 35
CONVE RS IO N GAIN ( dB)
RF FREQ UE NCY ( GHz)
T
A
= +85°C
T
A
= +25°C
T
A
= –40° C
16785-037
Figure 39. Conversion Gain vs. RF Frequency at Various Temperatures,
LO = 4 dBm
30
0
5
10
20
15
25
23 24 25 27 29 3126 28 30 32 33 34 35
INPUT I P 3 ( dBm)
RF FREQ UE NCY ( GHz)
T
A
= +85°C
T
A
= +25°C
T
A
= –40° C
16785-038
Figure 40. Input IP3 vs. RF Frequency at Various Temperatures,
LO = 4 dBm
0
–20
–15
–10
–5
23 24 25 27 29 3126 28 30 32 33 34 35
CONVE RS IO N GAI N ( dB)
RF FREQ UE NCY ( GHz)
LO = 6dBm
LO = 4dBm
LO = 2dBm
16785-040
Figure 41. Conversion Gain vs. RF Frequency at Various LO Power Levels,
TA = 25°C
30
0
5
10
20
15
25
23 24 25 27 29 3126 28 30 32 33 34 35
INP UT IP 3 ( dBm)
RF FREQ UE NCY ( GHz)
LO = 6dBm
LO = 4dBm
LO = 2dBm
16785-041
Figure 42. Input IP3 vs. RF Frequency at Various LO Power Levels,
TA = 25°C
Data Sheet HMC798ALC4
Rev. 0 | Page 13 of 26
Downconverter IP2 and P1dB, Lower Sideband (High-Side LO)
80
70
60
50
40
30
20
10
023 24 25 27 29 3126 28 30 32 33 34 35
INPUT I P 2 ( dBm)
RF FREQ UE NCY ( GHz)
TA = +85°C
TA = +25°C
TA = –40° C
16785-143
Figure 43. Input IP2 vs. RF Frequency at Various Temperatures,
LO = 4 dBm
20
0
5
10
15
23 24 25 27 29 3126 28 30 32 33 34 35
INP UT P1d B ( dBm)
RF FREQ UE NCY ( GHz)
T
A
= +85°C
T
A
= +25°C
T
A
= –40° C
16785-039
Figure 44. Input P1dB vs. RF Frequency at Various Temperatures,
LO = 4 dBm
80
70
60
50
40
30
20
10
023 24 25 27 29 3126 28 30 32 33 34 35
INPUT I P 2 ( dBm)
RF FREQ UE NCY ( GHz)
16785-145
LO = 6dBm
LO = 4dBm
LO = 2dBm
Figure 45. Input IP2 vs. RF Frequency at Various LO Power Levels,
TA = 25°C
20
0
5
10
15
23 24 25 27 29 3126 28 30 32 33 34 35
INP UT P1d B ( dBm)
RF FREQ UE NCY ( GHz)
LO = 6dBm
LO = 4dBm
LO = 2dBm
16785-042
Figure 46. Input P1dB vs. RF Frequency at Various LO Power Levels,
TA = 25°C
HMC798ALC4 Data Sheet
Rev. 0 | Page 14 of 26
IF = 3.75 GHz, Upper Sideband (Low-Side LO)
0
–20
–15
–10
–5
23 24 25 27 29 3126 28 30 32 33 34 35
CONVE RS IO N GAI N ( dB)
RF FREQ UE NCY ( GHz)
T
A
= +85°C
T
A
= +25°C
T
A
= –40° C
16785-043
Figure 47. Conversion Gain vs. RF Frequency at Various Temperatures,
LO = 4 dBm
30
0
5
10
20
15
25
23 24 25 27 29 3126 28 30 32 33 34 35
INP UT IP 3 ( dBm)
RF FREQ UE NCY ( GHz)
T
A
= +85°C
T
A
= +25°C
T
A
= –40° C
16785-044
Figure 48. Input IP3 vs. RF Frequency at Various Temperatures,
LO = 4 dBm
0
–20
–15
–10
–5
23 24 25 27 29 3126 28 30 32 33 34 35
CONVE RS IO N GAI N ( dB)
RF FREQ UE NCY ( GHz)
LO = 6dBm
LO = 4dBm
LO = 2dBm
16785-046
Figure 49. Conversion Gain vs. RF Frequency at Various LO Power Levels,
TA = 25°C
30
0
5
10
20
15
25
23 24 25 27 29 3126 28 30 32 33 34 35
INP UT IP 3 ( dBm)
RF FREQ UE NCY ( GHz)
LO = 6dBm
LO = 4dBm
LO = 2dBm
16785-047
Figure 50. Input IP3 vs. RF Frequency at Various LO Power Levels,
TA = 25°C
Data Sheet HMC798ALC4
Rev. 0 | Page 15 of 26
Downconverter IP2 and P1dB, Upper Sideband (Low-Side LO)
80
70
60
50
40
30
20
10
023 24 25 27 29 3126 28 30 32 33 34 35
INPUT I P 2 ( dBm)
RF FREQ UE NCY ( GHz)
TA = +85°C
TA = +25°C
TA = –40° C
16785-151
Figure 51. Input IP2 vs. RF Frequency at Various Temperatures,
LO = 4 dBm
20
0
5
10
15
23 24 25 27 29 3126 28 30 32 33 34 35
INP UT P1d B ( dBm)
RF FREQ UE NCY ( GHz)
T
A
= +85°C
T
A
= +25°C
T
A
= –40° C
16785-045
Figure 52. Input P1dB vs. RF Frequency at Various Temperatures,
LO = 4 dBm
80
70
60
50
40
30
20
10
023 24 25 27 29 3126 28 30 32 33 34 35
INPUT I P 2 ( dBm)
RF FREQ UE NCY ( GHz)
16785-153
LO = 6dBm
LO = 4dBm
LO = 2dBm
Figure 53. Input IP2 vs. RF Frequency at Various LO Power Levels,
TA = 25°C
20
0
5
10
15
23 24 25 27 29 31
26 28 30 32 33 34 35
INPUT P1dB (dBm)
RF FREQ UE NCY ( GHz)
LO = 6dBm
LO = 4dBm
LO = 2dBm
16785-048
Figure 54. Input P1dB vs. RF Frequency at Various LO Power Levels,
TA = 25°C
HMC798ALC4 Data Sheet
Rev. 0 | Page 16 of 26
IF = 3.75 GHz, Lower Sideband (High-Side LO)
0
–20
–15
–10
–5
23 24 25 27 29 31
26 28 30 32 33 34 35
CONVE RS IO N GAIN ( dB)
RF FREQ UE NCY ( GHz)
T
A
= +85°C
T
A
= +25°C
T
A
= –40° C
16785-049
Figure 55. Conversion Gain vs. RF Frequency at Various Temperatures,
LO = 4 dBm
30
0
5
10
20
15
25
23 24 25 27 29 3126 28 30 32 33 34 35
INPUT I P 3 ( dBm)
RF FREQ UE NCY ( GHz)
T
A
= +85°C
T
A
= +25°C
T
A
= –40° C
16785-050
Figure 56. Input IP3 vs. RF Frequency at Various Temperatures,
LO = 4 dBm
0
–20
–15
–10
–5
23 24 25 27 29 3126 28 30 32 33 34 35
CONVE RS IO N GAIN ( dB)
RF FREQ UE NCY ( GHz)
LO = 6dBm
LO = 4dBm
LO = 2dBm
16785-052
Figure 57. Conversion Gain vs. RF Frequency at Various LO Power Levels,
TA = 25°C
30
0
5
10
20
15
25
23 24 25 27 29 31
26 28 30 32 33 34 35
INPUT I P 3 ( dBm)
RF FREQ UE NCY ( GHz)
LO = 6dBm
LO = 4dBm
LO = 2dBm
16785-053
Figure 58. Input IP3 vs. RF Frequency at Various LO Power Levels,
TA = 25°C
Data Sheet HMC798ALC4
Rev. 0 | Page 17 of 26
Downconverter IP2 and P1dB, Lower Sideband (High-Side LO)
80
70
60
50
40
30
20
10
023 24 25 27 29 3126 28 30 32 33 34 35
INPUT I P 2 ( dBm)
RF FREQ UE NCY ( GHz)
TA = +85°C
TA = +25°C
TA = –40° C
16785-159
Figure 59. Input IP2 vs. RF Frequency at Various Temperatures,
LO = 4 dBm
20
0
5
10
15
23 24 25 27 29 3126 28 30 32 33 34 35
INPUT P1dB (dBm)
RF FREQ UE NCY ( GHz)
T
A
= +85°C
T
A
= +25°C
T
A
= –40° C
16785-051
Figure 60. Input P1dB vs. RF Frequency at Various Temperatures,
LO = 4 dBm
80
70
60
50
40
30
20
10
023 24 25 27 29 3126 28 30 32 33 34 35
INPUT I P 2 ( dBm)
RF FREQ UE NCY ( GHz)
16785-161
LO = 6dBm
LO = 4dBm
LO = 2dBm
Figure 61. Input IP2 vs. RF Frequency at Various LO Power Levels,
TA = 25°C
20
0
5
10
15
23 24 25 27 29 3126 28 30 32 33 34 35
INPUT P1dB (dBm)
RF FREQ UE NCY ( GHz)
LO = 6dBm
LO = 4dBm
LO = 2dBm
16785-054
Figure 62. Input P1dB vs. RF Frequency at Various LO Power Levels,
TA = 25°C
HMC798ALC4 Data Sheet
Rev. 0 | Page 18 of 26
ISOLATION AND RETURN LOSS
Upconverter performance at IFIN = 1 GHz, upper sideband.
50
0
10
20
40
30
23 24 25 27 29 3126 28 30 32 33 34 35
2 × LO TO RF ISOLATION (dB)
RF FREQ UE NCY ( GHz)
TA = +85°C
TA = +25°C
TA = –40° C
16785-055
Figure 63. 2 × LO to RF Isolation vs. RF Frequency at Various Temperatures,
LO = 4 dBm
50
0
10
20
40
30
23 24 25 27 29 3126 28 30 32 33 34 35
2 × LO TO IF ISOLATION (dB)
RF FREQ UE NCY ( GHz)
TA = +85°C
TA = +25°C
TA = –40° C
16785-056
Figure 64. 2 × LO to IF Isolation vs. RF Frequency at Various Temperatures,
LO = 4 dBm
50
0
10
20
40
30
23 24 25 27 29 3126 28 30 32 33 34 35
RF TO IF ISOLATION (dB)
RF FREQ UE NCY ( GHz)
TA = +85°C
TA = +25°C
TA = –40° C
16785-057
Figure 65. RF to IF Isolation vs. RF Frequency at Various Temperatures,
LO = 4 dBm
50
0
10
20
40
30
23 24 25 27 29 3126 28 30 32 33 34 35
2 × LO TO RF ISOLATION (dB)
RF FREQ UE NCY ( GHz)
LO = 6dBm
LO = 4dBm
LO = 2dBm
16785-058
Figure 66. 2 × LO to RF Isolation vs. RF Frequency at Various LO Power Levels,
TA = 25°C
50
0
10
20
40
30
23 24 25 27 29 3126 28 30 32 33 34 35
2 × LO TO IF ISOLATION (dB)
RF FREQ UE NCY ( GHz)
LO = 6dBm
LO = 4dBm
LO = 2dBm
16785-059
Figure 67. 2 × LO to IF Isolation vs. RF Frequency at Various LO Power Levels,
TA = 25°C
50
0
10
20
40
30
23 24 25 27 29 3126 28 30 32 33 34 35
RF TO IF ISOLATION (dB)
RF FREQ UE NCY ( GHz)
LO = 6dBm
LO = 4dBm
LO = 2dBm
16785-060
Figure 68. RF to IF Isolation vs. RF Frequency at Various LO Power Levels,
TA = 25°C
Data Sheet HMC798ALC4
Rev. 0 | Page 19 of 26
0
–30
–20
–10
10 11 12 14 16 18
13 15 17 19 20
LO RETURN LOSS (dB)
LO FREQUENCY (GHz )
T
A
= +85°C
T
A
= +25°C
T
A
= –40° C
16785-061
Figure 69. LO Return Loss vs. LO Frequency at Various Temperatures,
LO = 4 dBm
0
–30
–20
–10
20 11 23 27 31 33
25 29
22 24 28
26 30 32 34 3635
RF RE TURN LOSS ( dB)
RF FREQ UE NCY ( GHz)
T
A
= +85°C
T
A
= +25°C
T
A
= –40° C
16785-062
Figure 70. RF Return Loss vs. RF Frequency at Various Temperatures,
LO = 14 GHz at 4 dBm
0
–30
–20
–10
0 1 2 4 6 83 5 7 9 10
IF RETURN LOSS (dB)
IF FRE QUENCY ( GHz)
TA = +85°C
TA = +25°C
TA = –40° C
16785-063
Figure 71. IF Return Loss vs. IF Frequency at Various Temperatures,
LO = 14 GHz at 4 dBm
HMC798ALC4 Data Sheet
Rev. 0 | Page 20 of 26
IF BANDWIDTH—DOWNCONVERTER, UPPER SIDEBAND
LO frequency = 8 GHz.
0
–20
–15
–10
–5
0.1 1.1 2.1 4.13.1 5.1 6.1
CONVE RS IO N GAIN ( dB)
IF FRE QUENCY ( GHz)
T
A
= +85°C
T
A
= +25°C
T
A
= –40° C
16785-064
Figure 72. Conversion Gain vs. IF Frequency at Various Temperatures,
LO = 4 dBm
0.1 1.1 2.1 4.13.1 5.1 6.1
IF FRE QUENCY ( GHz)
T
A
= +85°C
T
A
= +25°C
T
A
= –40° C
30
0
5
10
20
15
25
INPUT I P 3 ( dBm)
16785-065
Figure 73. Input IP3 vs. IF Frequency at Various Temperatures,
LO = 4 dBm
0
–20
–15
–10
–5
0.1 1.1 2.1 4.13.1 5.1 6.1
CONVE RS IO N GAIN ( dB)
IF FRE QUENCY ( GHz)
LO = 6dBm
LO = 4dBm
LO = 2dBm
16785-066
Figure 74. Conversion Gain vs. IF Frequency at Various LO Power Levels,
TA = 25°C
0.1 1.1 2.1 4.13.1 5.1 6.1
IF FRE QUENCY ( GHz)
30
0
5
10
20
15
25
INPUT I P 3 ( dBm)
LO = 6dBm
LO = 4dBm
LO = 2dBm
16785-067
Figure 75. Input IP3 vs. IF Frequency at Various LO Power Levels,
TA = 25°C
Data Sheet HMC798ALC4
Rev. 0 | Page 21 of 26
IF BANDWIDTH—DOWNCONVERTER, LOWER SIDEBAND
LO frequency = 13 GHz.
0
–20
–15
–10
–5
0.1 1.1 2.1 4.13.1 5.1 6.1
CONVE RS IO N GAIN ( dB)
IF FRE QUENCY ( GHz)
T
A
= +85°C
T
A
= +25°C
T
A
= –40° C
16785-068
Figure 76. Conversion Gain vs. IF Frequency at Various Temperatures,
LO = 4 dBm
0.1 1.1 2.1 4.13.1 5.1 6.1
IF FRE QUENCY ( GHz)
T
A
= +85°C
T
A
= +25°C
T
A
= –40° C
30
0
5
10
20
15
25
INPUT I P 3 ( dBm)
16785-069
Figure 77. Input IP3 vs. IF Frequency at Various Temperatures,
LO = 4 dBm
0
–20
–15
–10
–5
0.1 1.1 2.1 4.13.1 5.1 6.1
CONVE RS IO N GAIN ( dB)
IF FRE QUENCY ( GHz)
LO = 6dBm
LO = 4dBm
LO = 2dBm
16785-070
Figure 78. Conversion Gain vs. IF Frequency at Various LO Power Levels,
TA = 25°C
0.1 1.1 2.1 4.13.1 5.1 6.1
IF FRE QUENCY ( GHz)
30
0
5
10
20
15
25
INPUT I P 3 ( dBm)
LO = 6dBm
LO = 4dBm
LO = 2dBm
16785-071
Figure 79. Input IP3 vs. IF Frequency at Various LO Power Levels,
TA = 25°C
HMC798ALC4 Data Sheet
Rev. 0 | Page 22 of 26
SPURIOUS AND HARMONICS PERFORMANCE
M × N Spurious Outputs
Downconversion, Upper Sideband
Spur values are (M × RF) − (N × LO). RF = 10.1 GHz, LO =
10 GHz, RF power = −10 dBm, and LO power = 13 dBm. Mixer
spurious products are measured in dBc from the IF output power
level. N/A means not applicable.
N × LO
0 1 2 3 4
M × RF
0 0 25 3 N/A N/A
1 18 28 0 25 47
2
N/A
N/A
63
75
71
3 N/A N/A N/A N/A 72
4 N/A N/A N/A N/A N/A
Downconversion, Lower Sideband
Spur values are (M × RF) − (N × LO). RF = 14 GHz, LO =
14.1 GHz, RF power = −10 dBm, and LO power = 13 dBm.
Mixer spurious products are measured in dBc from the IF output
power level. N/A means not applicable.
N × LO
0 1 2 3 4
M × RF
0 0 18 0 N/A N/A
1 22 33 0 30 48
2 N/A N/A 58 75 62
3 N/A N/A N/A N/A 70
4 N/A N/A N/A N/A N/A
Upconversion, Upper Sideband
Spur values are (M × IFIN) + (N × LO). IFIN = 0.1 GHz, LO =
10 GHz, RF power = −10 dBm, and LO power = 13 dBm. Mixer
spurious products are measured in dBc from the RF output power
level. N/A means not applicable.
N × LO
0 1 2 3 4
M × IFIN
−5 75 77 74 70 N/A
−4 80 79 73 70 N/A
−3
83
77
63
71
N/A
−2 85 78 44 74 N/A
−1 49 39 3 53 N/A
0 0 12 14 0 N/A
+1 50 36 0 53 N/A
+2 83 73 44 73 N/A
+3 81 77 68 71 N/A
+4 77 78 73 70 N/A
+5 78 77 72 69 N/A
Upconversion, Lower Sideband
Spur values are (M × IFIN) + (N × LO). IFIN = 0.1 GHz, LO =
14.1 GHz, RF power = −10 dBm, and LO power = 13 dBm.
Mixer spurious products are measured in dBc from the RF output
power level. N/A means not applicable.
N × LO
0
1
2
3
4
M × IFIN
−5 76 76 68 N/A N/A
−4 76 77 72 N/A N/A
−3 80 77 69 N/A N/A
−2 82 75 40 N/A N/A
−1 53 45 0 N/A N/A
0
0
24
8
N/A
N/A
+1 53 41 0 N/A N/A
+2 82 73 44 N/A N/A
+3 79 74 63 N/A N/A
+4 79 73 65 N/A N/A
+5
75
73
68
N/A
N/A
Data Sheet HMC798ALC4
Rev. 0 | Page 23 of 26
THEORY OF OPERATION
The HMC798ALC4 is a subharmonically pumped (×2) MMIC
mixer with an integrated LO amplifier that can be used as an
upconverter or a downconverter from 24 GHz to 34 GHz. The
LO amplifier is single bias at a 5 V dc with a typical 4 dBm LO
drive level.
When used as a downconverter, the HMC798ALC4 downconverts
radio frequencies between 24 GHz and 34 GHz to intermediate
frequencies between dc and 4 GHz.
When used as an upconverter, the mixer up converts IF
between dc and 4 GHz to RF between 24 GHz and 34 GHz.
HMC798ALC4 Data Sheet
Rev. 0 | Page 24 of 26
APPLICATIONS INFORMATION
TYPICAL APPLICATION CIRCUIT
Figure 80 shows the typical application circuit for the
HMC798ALC4. The integrated LO amplifier is single bias at 5 V
with a typical 4 dBm input. Place capacitors as close as possible
to the pin to decouple the power supply. The LO and RF pins
are internally ac-coupled. The IF pin is internally dc-coupled.
When IF operation to dc is not required, use of an external
series capacitor is recommended, of a value chosen to pass the
necessary IF frequency range. When IF operation to dc is
required, do not exceed the IF source or sink current rating
specified in the Absolute Maximum Ratings section.
16785-072
LO
GND
NIC
NIC
GND
IF
GND GND
GND
LO
GND
NIC
GND
GND
RF
GND
NIC
VCC
GND GND
NIC
NIC
NIC
NIC
GND
13
14
15
16
17
18
6
5
4
3
2
1
19
20
21
22
23
24
12
11
10
9
8
7
HMC798ALC4
VCC
TERMINAL_SWAGE
TERMINAL_SWAGE
K_SRI-NS
IF
SMA_JC_062PCB
RF
K_SRI-NS
C1
100pF C2
10nF C3
4.7µF
+
Figure 80. Typical Application Circuit
EVALUATION PCB INFORMATION
Use RF circuit design techniques for the circuit board used in
the application. Ensure that signal lines have 50 Ω impedance,
and connect the package ground leads and the exposed pad
directly to the ground plane (see Figure 81). Use a sufficient
number of via holes to connect the top and bottom ground
planes. The evaluation circuit board shown in Figure 81 is
available from Analog Devices, Inc., upon request.
Table 5. List of Materials for Evaluation PCB
EV1HMC798ALC4
Item Description
J1 Johnson Surface-Mount Type A (SMA) connector
J2, J3 SRI 2.92 mm connector
U1 HMC798ALC4
PCB1 126598-1 evaluation board
C1 C0G, 0402, 100 pF capacitor
C2 X7R, 0603, 10000 pF capacitor
C3 SMD, 3216, 4.7 µF capacitor
1 126598-1 is the raw bare PCB identifier. Reference EV1HMC798ALC4 when
ordering the complete evaluation PCB.
SOLDERING INFORMATION AND RECOMMENDED
LAND PATTERN
Figure 81 shows the recommended land pattern for the
HMC798ALC4. The HMC798ALC4 is contained in a 3.90 mm
× 3.90 mm, 24-terminal, ceramic LCC package with an exposed
ground pad (EPAD). This exposed pad is internally connected
to the ground of the chip. To minimize thermal impedance and
ensure electrical performance, solder the exposed pad to the
low impedance ground plane on the PCB. It is recommended
that the ground planes on all layers under the exposed pad be
stitched together with vias to further reduce thermal
impedance. The land pattern on the HMC798ALC4 evaluation
board provides a simulated thermal resistance (θJC) of 119° C / W.
Data Sheet HMC798ALC4
Rev. 0 | Page 25 of 26
.010" REF
.030"
MASK O P E NING .098" SQUARE M AS K OPENING
.020 × 45" CHAM FER FOR P IN 1
.106" SQUARE
GRO UND P AD
.116"
MASK
OPENING
PIN 1 .0197"
[0.50]
.034"
TYPICAL
VIA
SPACING
PAD SI ZE
.026" × .010"
ᶲ .010"
TYPICAL VIA
GRO UND P AD
SOLDERMASK .004" MASK/ME TAL OVERLAP
.178" SQUARE
.010" MIN MAS K WIDTH
16785-111
Figure 81. Evaluation Board Land Pattern for the HMC798ALC4 Package
16785-073
24 23 22 21 20 19
18
17
16
15
14
13
121110987
6
5
4
3
2
1
126598-1
RF
IF LO
+
VCC
GND
J1 J3
J2
798A
XXXX
C1 C2
C3
Figure 82. Evaluation PCB Top Layer
HMC798ALC4 Data Sheet
Rev. 0 | Page 26 of 26
OUTLINE DIMENSIONS
12
0.50
BSC
2.50 REF
BOTTOM VIEW
TOP VIEW
1
24
7
13
18 19
6
02-27-2017-B
0.36
0.30
0.24
EXPOSED
PAD
PKG-004840
PIN 1
INDICATOR
4.05
3.90 SQ
3.75
3.10 BSC
FO R P ROPE R CONNECT IO N OF
THE EXPOSED PAD, REFER TO
THE P IN CO NFIGURAT ION AND
FUNCTION DES CRI P TI ONS
SECTION OF THIS DATA SHEET.
2.60
2.50 SQ
2.40
PIN 1
0.32
BSC
0.08
BSC
SIDE VIEW
1.00
0.90
0.80
SEATING
PLANE
Figure 83. 24-Terminal Ceramic Leadless Chip Carrier [LCC]
(E-24-1)
Dimensions shown in millimeters
ORDERING GUIDE
Model
1
Temperature Range
MSL Rating
2
Package Description
Package Option
HMC798ALC4 −40°C to +85°C MSL3 24-Terminal Ceramic Leadless Chip Carrier [LCC] E-24-1
HMC798ALC4TR
−40°C to +85°C
MSL3
24-Terminal Ceramic Leadless Chip Carrier [LCC]
E-24-1
HMC798ALC4TR-R5 −40°C to +85°C MSL3 24-Terminal Ceramic Leadless Chip Carrier [LCC] E-24-1
EV1HMC798ALC4 Evaluation PCB Assembly
1 All models are RoHS compliant parts.
2 The peak reflow temperature is 260°C. See the Absolute Maximum Ratings section, Table 2.
©2018 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D16785-0-6/18(0)
