DATA SHEET
The information in this document is subject to change without notice.
Document No. P11435EJ5V0DS00 (5th edition)
Date Published September 1998 NS CP(K)
Printed in Japan
PHOTOCOUPLER
PS2533-1,-2,-4,PS2533L-1,-2,-4
HIGH COLLECTOR TO EMITTER VOLTATGE
HIGH ISOLATION VOLTAGE
MULTI PHOTOCOUPLER SIRIES
©
1990
−NEPOCTM Series−
The mark •
••
• shows major revised poi nts.
DESCRIPTION
The PS2533-1, -2, -4 and PS2533L-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode
and an NPN silicon darlington connected phototransistor.
The PS2533-1, -2, -4 are in a plastic DIP (Dual In-line Package) and the PS2533L-1, -2, -4 are lead bending type
(Gull-wing) for surface mount.
FEATURES
• High collector to emitter voltage (VCEO = 350 V)
• High Isolation voltage BV = 5 000 Vr.m.s.: standard products
BV = 3 750 Vr.m.s.: VDE0884 approved products (Option)
• High current transfer ratio (CTR = 4 000 % TYP.)
• High-speed switching (tr, tf = 100
µ
s TYP.)
• Ordering number of taping product: PS2533L-1-E3, E4, F3, F4, PS2533L-2-E3, E4
• UL approved: File No. E72422 (S)
• BSI approved: No. 8221/8222
• NEMKO approved: No. 98101708
• SEMKO approved: No. 9824187/01-02
• DEMKO approved: No. 307863
• FIMKO approved: No. F1 11397
• VDE0884 approved (Option)
APPLICATIONS
• Telephone, Exchange equipment
• FAX/MODEM
2
PS2533-1,-2,-4,PS2533L-1,-2,-4
PACKAGE DIMENSIONS (in millimeters)
DIP type
PS2533-2PS2533-1
20.3 MAX.
6.5
3.8 MAX.
4.55 MAX.2.8 MIN.
0.65
2.54
1.25±0.15 0.50±0.10
0.25
M
0 to 15˚
7.62
PS2533-4
5.1 MAX.
6.5
3.8 MAX.
4.55 MAX.2.8 MIN.
0.65
2.54
1.25±0.15 0.50±0.10
0.25
M
0 to 15˚
7.62
0 to 15˚
7.62
10.2 MAX.
6.5
3.8 MAX.
4.55 MAX.2.8 MIN.
0.65
2.54
1.25±0.15 0.50±0.10
0.25
M
PS2533-1 (NEW PACKAGE)
4.6±0.35
6.5
3.8 MAX.
4.55 MAX.2.8 MIN.
0.65
2.54
1.25±0.15 0.50±0.10
0.25
M
0 to 15˚
7.62
TOP VIEW
1. Anode
2. Cathode
3. Emitter
4. Collector
12
43
TOP VIEW
1, 3. Anode
2, 4. Cathode
5, 7. Emitter
6, 8. Collector
1234
8765
TOP VIEW
1, 3, 5, 7. Anode
2, 4, 6, 8. Cathode
9, 11, 13, 15. Emitter
10, 12, 14, 16. Collector
12345678
16 15 14 13 12 11 10 9
TOP VIEW
1. Anode
2. Cathode
3. Emitter
4. Collector
12
43
3
PS2533-1,-2,-4,PS2533L-1,-2,-4
Lead bending type
PS2533L-2PS2533L-1
PS2533L-4
3.8 MAX.
2.54
1.25±0.15
0.25
M
3.8 MAX.
2.54
1.25±0.15
0.25
M
3.8 MAX.
2.54
1.25±0.15
0.25
M
20.3 MAX.
6.5
10.2 MAX.
6.5
5.1 MAX.
6.5
PS2533L-1 (NEW PACKAGE)
4.6±0.35
6.5
3.8 MAX.
2.54
1.25±0.15
0.25
M
0.05 to 0.2
0.9±0.25
9.60±0.4
7.62 7.62
0.9±0.25
9.60±0.4
0.05 to 0.2
7.62
0.9±0.25
9.60±0.4
0.05 to 0.2
7.62
0.9±0.25
9.60±0.4
0.05 to 0.2
TOP VIEW
1. Anode
2. Cathode
3. Emitter
4. Collector
12
43
TOP VIEW
1, 3. Anode
2, 4. Cathode
5, 7. Emitter
6, 8. Collector
1234
8765
TOP VIEW
1, 3, 5, 7. Anode
2, 4, 6, 8. Cathode
9, 11, 13, 15. Emitter
10, 12, 14, 16. Collector
12345678
16 15 14 13 12 11 10 9
TOP VIEW
1. Anode
2. Cathode
3. Emitter
4. Collector
12
43
4
PS2533-1,-2,-4,PS2533L-1,-2,-4
Lead bending type for long distance
PS2533L1-1 PS2533L2-1
5.1 MAX.
6.5
7.62
0 to 15˚
10.16
3.8 MAX.
4.25 MAX.2.8 MIN.
0.35
2.54
1.25±0.15 0.50±0.10
0.25
M
5.1 MAX.
6.5
PS2533L2PS2533L1
4.6±0.35
6.5
1.0±0.2
3.8 MAX.
4.25 MAX.3.2 MIN.
0.35
1.25±0.15
2.54
0.50±0.10
0.25
M
3.8 MAX.
2.54
0.25
M
1.25±0.15 0.9±0.25
7.62
12.0 MAX.
0.25±0.2
10.16
0.9±0.25
7.62
12.0 MAX.
0.25±0.2
10.16
3.8 MAX.
0.25
M
1.25±0.15
2.54
7.62
0 to 15˚
10.16
4.6±0.35
6.5
1.0±0.2
TOP VIEW
1. Anode
2. Cathode
3. Emitter
4. Collector
12
43
TOP VIEW
1. Anode
2. Cathode
3. Emitter
4. Collector
12
43
TOP VIEW
1. Anode
2. Cathode
3. Emitter
4. Collector
12
43
TOP VIEW
1. Anode
2. Cathode
3. Emitter
4. Collector
12
43
5
PS2533-1,-2,-4,PS2533L-1,-2,-4
ORDERING INFORMATION
Part Number Package Safety Standard A pproval Applic at i on Part Number *1
PS2533-1
PS2533L-1
PS2533L1-1
PS2533L2-1
4-pin DIP
4-pin DIP (lead bendi ng surfac e m ount )
4-pin DIP (f or l ong di stance)
4-pin DIP (f or l ong di stance surface mount)
Standard products
(UL, BSI, NEMKO, SEMKO,
DEMKO, FIMKO approv ed)
PS2533-1
PS2533-2
PS2533L-2 8-pin DI P
8-pin DIP (lead bendi ng surfac e m ount ) PS2533-2
PS2533-4
PS2533L-4 16-pin DI P
16-pin DIP (lead bendi ng surfac e m ount ) PS2533-4
PS2533-1-V
PS2533L-1-V
PS2533L1-1-V
PS2533L2-1-V
4-pin DIP
4-pin DIP (lead bendi ng surfac e m ount )
4-pin DIP (f or l ong di stance)
4-pin DIP (f or l ong di stance surface mount)
VDE0884 approved products
(Option) PS2533-1
PS2533-2-V
PS2533L-2-V 8-pin DI P
8-pin DIP (lead bendi ng surfac e m ount ) PS2533-2
PS2533-4-V
PS2533L-4-V 16-pin DI P
16-pin DIP (lead bendi ng surfac e m ount ) PS2533-4
*1 As applying to Safety Standard, following part number should be used.
6
PS2533-1,-2,-4,PS2533L-1,-2,-4
ABSOLUTE MAXIMUM RATINGS (TA = 25 °
°°
°C, unless otherwise specified)
Ratings
Parameter Symbol PS2533-1,
PS2533L-1 PS2533-2, -4,
PS2533L-2, -4 Unit
Diode Forward Current (DC) IF80 mA
Reverse Vol tage VR6V
Power Dissipati on Derating
∆
PD/°C1.5 1.2mW
°C
Power Dissipati on PD150 120 mW/ch
Peak Forward Current *1 IFP 1A
Transistor Collector to Emitter Voltage VCEO 350 V
Emitter to Collector Voltage VECO 0.6 V
Collector Current IC150 mA/ch
Power Dissipati on Derating
∆
PC/°C 3.0 2.4 mW/°C
Power Dissipati on PC300 240 mW/ch
Isolat i on Voltage *2 BV 5 000
3 750 *3 Vr.m.s.
Operating Am bi ent Tem perature TA−55 to +100 °C
Storage Temperat ure Tstg −55 to +150 °C
*1 PW = 100
µ
s, Duty Cycle = 1 %
*2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output
*3 VDE0884 approved products (Option)
7
PS2533-1,-2,-4,PS2533L-1,-2,-4
ELECTRICAL CHARACTERISTICS (TA = 25 °
°°
°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Diode Forward Voltage VFIF = 10 mA 1.15 1.40 V
Reverse Current IRVR = 5 V 5
µ
A
Terminal Capaci tance CtV = 0 V, f = 1.0 MHz 30 pF
Transistor Collector to Emitter
Dark Current ICEO VCE = 350 V, I F = 0 m A 400 nA
Coupled Current Transf er Ratio
(IC/IF)CTR IF = 1 mA, VCE = 2 V 1 500 4 000 6 500 %
Collector Saturation
Voltage VCE (sat) IF = 1 mA, IC = 2 mA 1.0 V
Isolat i on Resistance RI-O VI-O = 1.0 kVDC 1011 Ω
Isolat i on Capacitance CI-O V = 0 V, f = 1. 0 M Hz 0.6 pF
Rise Time *1 trVCC = 5 V, I C = 10 mA , RL = 100 Ω100
µ
s
Fall Time *1 tf100
*1 Test circuit for switching time
(PW = 1 ms,
Duty cycle = 1/10)
Pulse input VCC
VOUT
RL = 100 Ω50 Ω
IF
8
PS2533-1,-2,-4,PS2533L-1,-2,-4
TYPICAL CHARACTERISTICS (TA = 25 °
°°
°C, unless otherwise specified)
PS2533-1
PS2533L-1
1.5 mW/˚C
PS2533-2, -4
PS2533L-2, -4
1.2 mW/˚C
150
100
50
0 25 50 75 100 125 150
Ambient Temperature T
A
(˚C)
Diode Power Dissipation P
D
(mW)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
PS2533-1
PS2533L-1
3.0 mW/˚C
PS2533-2, -4
PS2533L-2, -4
2.4 mW/˚C
400
300
200
100
0 25 50 75 100 125 150
Ambient Temperature T
A
(˚C)
Transistor Power Dissipation P
C
(mW)
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
+25 ˚C
0 ˚C
–25 ˚C
–55 ˚C
T
A
= +100 ˚C
+75 ˚C
+50 ˚C
100
10
1
0.1
0.01
0.6 0.8 1.0 1.2 1.4 1.6
Forward Voltage V
F
(V)
Forward Current I
F
(mA)
FORWARD CURRENT vs.
FORWARD VOLTAGE
I
F
= 0.5 mA
1.0 mA
1.5 mA
2.0 mA
2.5 mA
3.0 mA
3.5 mA
4.0 mA
5.0 mA
4.5 mA
160
140
120
100
80
60
40
20
021 3456 87
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
V
CE
= 350 V
–50 –25 0 25 50 75 100
100 n
10 n
1 n
100 p
10
µ
1
µ
Ambient Temperature T
A
(˚C)
Collector to Emitter Dark Current I
CEO
(A)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
I
F
= 5.0 mA
2.0 mA
1.0 mA
0.5 mA
500
100
10
50
1
5
0.1
0.5
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Collector Saturation Voltage V
CE(sat)
(V)
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
9
PS2533-1,-2,-4,PS2533L-1,-2,-4
LONG TERM CTR DEGRADATION
Time (Hr)
CTR (Relative Value)
1.2
1.0
0.8
0.6
0.4
0.2
0.010 10
2
10
3
10
4
10
5
10
6
I
F
= 1 mA,
T
A
= 25 ˚C
I
F
= 1 mA,
T
A
= 60 ˚C
FREQUENCY RESPONSE
Frequency f (kHz)
Normalized Gain Gv
5
0
–10
–5
–15
–20
–25
–30
0.01 0.1 1 10 100
R
L
= 1 kΩ100 Ω10 Ω
V
CE
= 4 V, V
in
= 0.1 V
p-p
R
L
V
in
V
out
1 kΩ
47 Ω
1
F
µ
,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,
Normalized to 1.0
at T
A
= 25 ˚C,
I
F
= 1 mA, V
CE
= 2 V
1.2
0.8
0.4
0.0
1.0
0.6
0.2
–50 –25 25 50 75 1000
Ambient Temperature T
A
(˚C)
Normalized Current Transfer Ratio CTR
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE
V
CE
= 2 V
Sample A
Sample B
5 000
4 000
3 000
1 000
0
2 000
15100.1 0.5 15
Forward Current I
F
(mA)
Current Transfer Ratio CTR (%)
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
V
CC
= 10 V,
I
C
= 10 mA t
r
t
d
t
s
t
f
500
100
50
10
1
5
20 100 200 500 1 k 2 k50
Load Resistance R
L
(Ω)
Switching Time t ( s)
µ
SWITCHING TIME vs.
LOAD RESISTANCE
Remark The graphs indicate nominal characteristics.
10
PS2533-1,-2,-4,PS2533L-1,-2,-4
TAPING SPECIFICATIONS (in millimeters)
Tape Direction
PS2533L-1-E3, F3 PS2533L-1-E4, F4
Outline and Dimensions (Tape)
1.55±0.1
2.0±0.1
4.0±0.1 1.55±0.1
1.75±0.1
4.3±0.2
10.3±0.1
0.3
7.5±0.1
16.0±0.3
5.6±0.1
8.0±0.1
Outline and Dimensions (Reel)
Packing: PS2533L-1-E3, E4 1 000 pcs/reel
PS2533L-1-F3, F4 2 000 pcs/reel
2.0±0.5
R 1.0
13.0±0.5
φ
21.0±0.8
φ
16.4
+2.0
–0.0
80.0±5.0
φ
PS2533L-1-E3, E4: 250
PS2533L-1-F3, F4: 330
φ
φ
11
PS2533-1,-2,-4,PS2533L-1,-2,-4
Tape Direction
PS2533L-2-E3 PS2533L-2-E4
Outline and Dimensions (Tape)
1.55±0.1
2.0±0.1
4.0±0.1 1.55±0.1
1.75±0.1
4.3±0.2
10.3±0.1
0.3
7.5±0.1
16.0±0.3
10.4±0.1
12.0±0.1
Outline and Dimensions (Reel)
Packing: 1 000 pcs/reel
16.4
+2.0
–0.0
80.0±5.0
φ
330
φ
2.0±0.5
R 1.0
13.0±0.5
φ
21.0±0.8
φ
12
PS2533-1,-2,-4,PS2533L-1,-2,-4
RECOMMENDED SOLDERING CONDITIONS
(1) Infrared reflow soldering
• Peak reflow temperature 235 °C (package surface temperature)
• Time of temperature higher than 210 °C 30 seconds or less
• Number of reflows Three
• Flux Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt % is recommended.)
60 to 90 s
(preheating)
210 ˚C
120 to 160 ˚C
Package Surface Temperature T (˚C)
Time (s)
(heating)
to 10 s
to 30 s
235 ˚C (peak temperature)
Recommended Temperature Profile of Infrared Reflow
Peak temperature 235 ˚C or below
(2) Dip soldering
• Temperature 260 °C or below (molten solder temperature)
• Time 10 seconds or less
• Number of times One
• Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of
0.2 Wt % is recommended.)
(3) Cautions
•Fluxes
Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.
13
PS2533-1,-2,-4,PS2533L-1,-2,-4
SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884)
Parameter Symbol Speck Unit
Applic at i on classification (DI N V DE 0109)
for rated li ne v ol tages ≤ 300 Vr.m.s .
for rated li ne v ol tages ≤ 600 Vr.m.s . IV
III
Climati c test clas s (DIN IEC 68 Teil 1/09.80) 55/100/21
Dielect ri c strength
maximum operating isolation voltage
Test v ol t age (partial discharge test, procedure a for type test and random tes t)
Upr = 1.2 × UIORM, Pd < 5 pC
UIORM
Upr
890
1 068 Vpeak
Vpeak
Test v ol t age (partial discharge test, procedure b for random t est)
Upr = 1.6 × UIORM, Pd < 5 pC Upr 1 424 Vpeak
Highest perm i ssible overvoltage UTR 6 000 Vpeak
Degree of pollut i on (DI N V DE 0109) 2
Clearance dis tance > 7.0 mm
Creepage distance > 7.0 mm
Comparativ e tracki ng i ndex (DIN IE C 112/VDE 0303 part 1) CTI 175
Material group (DIN VDE 0109) III a
Storage tem perature range Tstg −55 to +150 °C
Operating tem perat ure range TA–55 to +100 °C
Isolat i on resistance, m i ni m um value
VIO = 500 V dc at T A = 25 °C
VIO = 500 V dc at T A M AX. at l east 100 °CRis MIN.
Ris MIN. 1012
1011 Ω
Ω
Safety maxi m um ratings (m ax i mum permissible i n case of fault, see thermal
derating curve)
Package temperature
Current (input c urrent IF, Psi = 0)
Power (output or total power dissipat i on)
Isolat i on resistance
VIO = 500 V dc at T A = 175 °C (T si)
Tsi
Isi
Psi
Ris MIN.
175
400
700
109
°C
mA
mW
Ω
14
PS2533-1,-2,-4,PS2533L-1,-2,-4
APPLICATION FOR TELEPHONE (EXAMPLE)
LINE
Bell Ringing Signal
(75 Vr.m.s., 16 Hz) PS2505-1, PS2506-1
PS2605, PS2606
PS2607, PS2608
etc. Bell Ringing Detect V
CC
V
CC
Line Observe
Dial Pulse PS2532
Generator PS2533
PS2521
PS2525
Dialer Circuit
IN
OUT
CPU
Photo MOS FET
Speech Circuit
15
PS2533-1,-2,-4,PS2533L-1,-2,-4
[MEMO]
PS2533-1,-2,-4,PS2533L-1,-2,-4
CAUTION
Within this device there exists GaAs (Gallium Arsenide) material which is a
harmful substance if ingested. Please do not under any circumstances break the
hermetic seal.
NEPOC is a trademark of NEC Corporation.
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96. 5
