APM2704CG Dual Enhancement Mode MOSFET (N- and P-Channel) Pin Description Features * N-Channel 4 20V/4A, 5 6 RDS(ON)=30m (typ.) @ VGS=4.5V 3 RDS(ON)=40m (typ.) @ VGS=2.5V 2 RDS(ON)=67m (typ.) @ VGS=1.8V * 1 P-Channel Top View of JSOT-6 -20V/-3A, RDS(ON)=56m (typ.) @ VGS=-4.5V (4)D2 (6)D1 RDS(ON)=85m (typ.) @ VGS=-2.5V RDS(ON)=135m (typ.) @ VGS=-1.8V * * * Super High Dense Cell Design Reliable and Rugged (3)G2 (1)G1 Lead Free and Green Devices Available (RoHS Compliant) Applications * (5)S1 (2)S2 Power Management in Notebook Computer, N-Channel MOSFET Portable Equipment and Battery Powered P-Channel MOSFET Systems Ordering and Marking Information Package Code CG : JSOT-6 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device APM2704 Assembly Material Handling Code Temperature Range Package Code APM2704 CG : M2704 XXXXX XXXXX - Date Code Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines "Green" to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.4 - Dec., 2008 1 www.anpec.com.tw APM2704CG Absolute Maximum Ratings Symbol (TA = 25C unless otherwise noted) Rating Parameter N Channel P Channel VDSS Drain-Source Voltage 20 -20 VGSS Gate-Source Voltage 10 10 4 -3 15 -10 1 -0.6 ID * Continuous Drain Current IDM* Pulsed Drain Current IS * Diode Continuous Forward Current TJ Maximum Junction Temperature T STG Storage Temperature Range PD* Power Dissipation RJA* VGS=4.5V (N) VGS=-4.5V (P) T A=100C 0.4 Thermal Resistance-Junction to Ambient A C -55 to 150 1 V A 150 T A=25C Unit W C/W 125 Note : *Surface Mounted on 1in pad area, t 10sec. 2 Electrical Characteristics Symbol Parameter (TA = 25C unless otherwise noted) APM2704CG Test Conditions Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250A N-Ch 20 - - VGS=0V, IDS=-250A P-Ch -20 - - - - 1 - - 30 - - -1 - - -30 VDS=16V, VGS=0V IDSS Zero Gate Voltage Drain Current N-Ch TJ=85C VDS=-16V, VGS=0V P-Ch TJ=85C VGS(th) IGSS VSD a Gate Threshold Voltage Gate Leakage Current Diode Forward Voltage Copyright ANPEC Electronics Corp. Rev. A.4 - Dec., 2008 VDS=VGS, IDS=250A N-Ch 0.5 0.75 1 VDS=VGS, IDS=-250A P-Ch -0.5 -0.75 -1 VGS=10V, VDS=0V N-Ch - - 10 VGS=10V, VDS=0V P-Ch - - 10 ISD=1A, VGS=0V N-Ch - 0.6 1.3 ISD=-0.6A, VGS=0V P-Ch - -0.6 -1.3 2 V A V A V www.anpec.com.tw APM2704CG Electrical Characteristics (Cont.) Symbol Parameter (TA = 25C unless otherwise noted) APM2704CG Test Conditions Min. Typ. Max. Unit Static Characteristics (Cont.) RDS(ON) a Drain-Source On-State Resistance Dynamic Characteristics N-Ch - 30 38 VGS=-4.5V, IDS=-3A P-Ch - 56 70 VGS=2.5V, IDS=2.5A N-Ch - 40 55 VGS=-2.5V, IDS=-1.5A P-Ch - 85 115 VGS=1.8V, IDS=1.5A N-Ch - 67 105 VGS=-1.8V, IDS=-1A P-Ch - 135 200 N-Ch - 5 - P-Ch - 10 - N-Ch - 600 - P-Ch - 790 - N-Ch - 110 - P-Ch - 110 - N-Ch - 80 - P-Ch - 80 - N-Ch - 12 23 P-Ch - 10 19 N-Ch - 30 55 P-Ch - 26 48 N-Ch - 38 69 P-Ch - 50 91 N-Ch - 6 12 P-Ch - 45 82 m b RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) VGS=4.5V, IDS=4A Turn-off Delay Time VGS=0V,VDS=0V,F=1MHz N-Channel VGS=0V, VDS=10V, Frequency=1.0MHz P-Channel VGS=0V, VDS=-10V, Frequency=1.0MHz N-Channel VDD=10V, RL=10, IDS=1A, VGEN=4.5V, RG=6 P-Channel VDD=-10V, RL=10, IDS=-1A, VGEN=-4.5V, RG=6 tf Turn-off Fall Time trr Reverse Recovery Time N-Channel IDS=4A,dlSD/dt =100A/s N-Ch - 21 - P-Ch - 25 - Qrr Reverse Recovery Charge P-Channel IDS=-3A,dlSD/dt =100A/s N-Ch - 10 - P-Ch - 7 - Copyright ANPEC Electronics Corp. Rev. A.4 - Dec., 2008 3 pF ns ns nc www.anpec.com.tw APM2704CG Electrical Characteristics (Cont.) Symbol Parameter Gate Charge Characteristics (TA = 25C unless otherwise noted) APM2704CG Test Conditions Min. Typ. Max. Unit b Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge N-Channel VDS=10V, VGS=4.5V, IDS=4A N-Ch - 10 14 P-Ch - 8 11 N-Ch - 1.2 - P-Channel VDS=-10V, VGS=-4.5V, IDS=-3A P-Ch - 1.3 - N-Ch - 3 - P-Ch - 2.7 - nC Note a : Pulse test ; pulse width300s, duty cycle2%. Note b : Guaranteed by design, not subject to production testing. Copyright ANPEC Electronics Corp. Rev. A.4 - Dec., 2008 4 www.anpec.com.tw APM2704CG Typical Operating Characteristics N-Channel Drain Current Power Dissipation 1.2 5 4 ID - Drain Current (A) Ptot - Power (W) 1.0 0.8 0.6 0.4 0 20 40 60 0 80 100 120 140 160 20 40 60 80 100 120 140 160 Tj - Junction Temperature (C) Safe Operation Area Thermal Transient Impedance Normalized Transient Thermal Resistance Rd s(o n) Lim it 10 300s 1ms 1 10ms 100ms 0.1 DC o TA=25 C 0.02 0.01 0 Tj - Junction Temperature (C) 30 ID - Drain Current (A) 2 1 0.2 0.0 3 0.1 1 10 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 2 1E-3 1E-4 1E-3 0.01 100 VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.4 - Dec., 2008 2 Mounted on 1in pad o RJA : 125 C/W 0.1 1 10 100 Square Wave Pulse Duration (sec) 5 www.anpec.com.tw APM2704CG Typical Operating Characteristics (Cont.) N-Channel Output Characteristics Drain-Source On Resistance 120 15 14 VGS= 2.5,3,4,5,6,7,8,9,10 V 110 RDS(ON) - On - Resistance (m) 13 12 ID - Drain Current (A) 11 10 9 8 2V 7 6 5 4 3 2 1.5V 0.5 1.0 1.5 VGS=1.8V 90 80 70 60 50 VGS=2.5V 40 VGS=4.5V 30 20 1 0 0.0 100 2.0 2.5 10 3.0 0 3 6 9 VDS - Drain - Source Voltage (V) ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage IDS=250A IDS=4A 1.4 Normalized Threshold Voltage 70 RDS(ON) - On - Resistance (m) 15 1.6 80 60 50 40 30 20 10 12 1.2 1.0 0.8 0.6 0.4 0.2 0 1 2 3 4 5 6 7 8 9 0.0 -50 -25 10 VGS - Gate - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.4 - Dec., 2008 0 25 50 75 100 125 150 Tj - Junction Temperature (C) 6 www.anpec.com.tw APM2704CG Typical Operating Characteristics (Cont.) N-Channel Drain-Source On Resistance Source-Drain Diode Forward 2.0 VGS = 4.5V 10 IDS = 4A 1.6 o 1.4 IS - Source Current (A) Normalized On Resistance 1.8 1.2 1.0 0.8 0.6 0.4 Tj=150 C o Tj=25 C 1 0.2 o RON@Tj=25 C: 30m 0.0 -50 -25 0 25 50 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 75 100 125 150 Tj - Junction Temperature (C) VSD - Source - Drain Voltage (V) Capacitance Gate Charge 1000 10 Frequency=1MHz 900 VGS - Gate - source Voltage (V) C - Capacitance (pF) 800 700 Ciss 600 500 400 300 200 Coss 100 Crss 0 VDS=10V 9 0 IDS =4A 8 7 6 5 4 3 2 1 4 8 12 16 0 20 4 8 12 16 20 QG - Gate Charge (nC) VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.4 - Dec., 2008 0 7 www.anpec.com.tw APM2704CG Typical Operating Characteristics (Cont.) P-Channel Drain Current Power Dissipation 3.5 1.2 3.0 -ID - Drain Current (A) Ptot - Power (W) 1.0 0.8 0.6 0.4 0.2 1.5 1.0 0.0 0 20 40 60 80 100 120 140 160 20 40 60 80 100 120 140 160 Tj - Junction Temperature (C) Safe Operation Area Thermal Transient Impedance Rd s(o n) Lim it 10 300s 1ms 1 10ms 100ms 0.1 DC o TA=25 C 0.01 0.01 0 Tj - Junction Temperature (C) 30 -ID - Drain Current (A) 2.0 0.5 Normalized Transient Thermal Resistance 0.0 2.5 0.1 1 10 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 2 1E-3 1E-4 1E-3 0.01 100 -VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.4 - Dec., 2008 2 Mounted on 1in pad o RJA : 125 C/W 0.1 1 10 100 Square Wave Pulse Duration (sec) 8 www.anpec.com.tw APM2704CG Typical Operating Characteristics (Cont.) P-Channel Output Characteristics Drain-Source On Resistance 10 200 VGS=-2.5,-3,-4,-5,-6,-7,-8-, -10V 180 RDS(ON) - On - Resistance (m) 9 -ID - Drain Current (A) 8 7 6 -2V 5 4 3 2 -1.5V VGS= -1.8V 160 140 120 VGS= -2.5V 100 80 VGS= -4.5V 60 40 20 1 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 2 4 6 -VDS - Drain - Source Voltage (V) -ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage 10 1.6 140 IDS=-250A IDS=-3A 1.4 120 Normalized Threshold Voltage RDS(ON) - On - Resistance (m) 8 100 80 60 40 1.2 1.0 0.8 0.6 0.4 0.2 20 0 1 2 3 4 5 6 7 8 9 0.0 -50 -25 10 -VGS - Gate - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.4 - Dec., 2008 0 25 50 75 100 125 150 Tj - Junction Temperature (C) 9 www.anpec.com.tw APM2704CG Typical Operating Characteristics (Cont.) P-Channel Drain-Source On Resistance Source-Drain Diode Forward 1.6 10 IDS = -3A 1.4 -IS - Source Current (A) Normalized On Resistance VGS = -4.5V 1.2 1.0 0.8 o Tj=150 C o Tj=25 C 1 0.6 o RON@Tj=25 C: 56m 0.4 -50 -25 0 25 50 75 0.1 0.0 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 -VSD - Source - Drain Voltage (V) Capacitance Gate Charge 10 Frequency=1MHz 1000 VDS= -10V -VGS - Gate - source Voltage (V) 9 900 C - Capacitance (nC) 0.4 Tj - Junction Temperature (C) 1100 800 Ciss 700 600 500 400 300 200 Coss 100 Crss 0 0.2 7 6 5 4 3 2 1 0 0 4 8 12 16 20 0 2 4 6 8 10 12 14 16 QG - Gate Charge (nC) -VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.4 - Dec., 2008 IDS= -3A 8 10 www.anpec.com.tw APM2704CG Package Information JSOT-6 L E2 E1 E D c b A A1 A2 e JSOT-6 S Y M B O L MIN. MAX. MIN. MAX. A 0.93 1.10 0.037 0.043 A1 0.01 0.10 0.000 0.004 A2 0.92 1.00 0.036 0.039 b 0.25 0.40 0.010 0.016 c 0.10 0.20 0.004 0.008 D 2.95 3.10 0.116 0.122 MILLIMETERS INCHES E 2.50 3.00 0.098 0.118 E1 2.30 2.50 0.091 0.098 E2 2.65 3.05 0.104 0.120 8 0 8 0.60 0.012 0.024 e 0 L 0.95 BSC 0 0.30 0.037 BSC Note : 1. Follow GEM 2928 6J. 2. Dimension D, D1, and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 10 mil. Copyright ANPEC Electronics Corp. Rev. A.4 - Dec., 2008 11 www.anpec.com.tw APM2704CG Carrier Tape & Reel Dimensions P0 P2 P1 A B0 W F E1 OD0 K0 A0 A OD1 B B T SECTION A-A SECTION B-B H A d T1 Application A H 178.0 2.00 50 MIN. JSOT-6 P0 4.00.10 T1 P1 4.00.10 C d D 8.4+2.00 13.0+0.50 1.5 MIN. -0.00 -0.20 P2 D0 2.00.05 1.5+0.10 -0.00 20.2 MIN. D1 T 1.0 MIN. W E1 8.00.30 1.750.10 A0 B0 F 3.50.05 K0 0.6+0.00 3.200.20 3.100.20 1.500.20 -0.40 (mm) Devices Per Unit Package Type Unit Quantity JSOT-6 Tape & Reel 3000 Copyright ANPEC Electronics Corp. Rev. A.4 - Dec., 2008 12 www.anpec.com.tw APM2704CG Taping Direction Information JSOT-6 USER DIRECTION OF FEED MAAAA XXXXX Reflow Condition MAAAA XXXXX MAAAA XXXXX MAAAA XXXXX MAAAA XXXXX MAAAA XXXXX (IR/Convection or VPR Reflow) tp TP Critical Zone TL to TP Ramp-up Temperature MAAAA XXXXX TL tL Tsmax Tsmin Ramp-down ts Preheat t 25 C to Peak 25 Time Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD-883D-1005.7 JESD-22-B, A102 MIL-STD-883D-1011.9 Copyright ANPEC Electronics Corp. Rev. A.4 - Dec., 2008 13 Description 245C, 5 sec 1000 Hrs Bias @125C 168 Hrs, 100%RH, 121C -65C~150C, 200 Cycles www.anpec.com.tw APM2704CG Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classification Temperature (Tp) Time within 5C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly Pb-Free Assembly 3C/second max. 3C/second max. 100C 150C 60-120 seconds 150C 200C 60-180 seconds 183C 60-150 seconds 217C 60-150 seconds See table 1 See table 2 10-30 seconds 20-40 seconds 6C/second max. 6C/second max. 6 minutes max. Time 25C to Peak Temperature Note: All temperatures refer to topside of the package. Measured on the body surface. 8 minutes max. Table 1. SnPb Eutectic Process - Package Peak Reflow Temperatures 3 Package Thickness Volume mm <350 <2.5 mm 2.5 mm 240 +0/-5C 225 +0/-5C Volume mm 350 3 225 +0/-5C 225 +0/-5C Table 2. Pb-free Process - Package Classification Reflow Temperatures Package Thickness Volume mm <350 3 3 Volume mm 350-2000 Volume mm >2000 3 <1.6 mm 260 +0C* 260 +0C* 260 +0C* 1.6 mm - 2.5 mm 260 +0C* 250 +0C* 245 +0C* 2.5 mm 250 +0C* 245 +0C* 245 +0C* *Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature +0C. For example 260C+0C) at the rated MSL level. Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 2F, No. 11, Lane 218, Sec 2 Jhongsing Rd., Sindain City, Taipei County 23146, Taiwan Tel : 886-2-2910-3838 Fax : 886-2-2917-3838 Copyright ANPEC Electronics Corp. Rev. A.4 - Dec., 2008 14 www.anpec.com.tw