APM2704CGC-TRG - Anpec Electronics Corp.

Dual Enhancement Mode MOSFET (N- and P-Channel)

Copyright  ANPEC Electronics Corp.

Rev. A.4 - Dec., 2008 www.anpec.com.tw1

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and

advise customers to obtain the latest version of relevant information to verify before placing orders.

APM2704CG

FeaturesPin Description

Ordering and Marking Information

•N-Channel

20V/4A,

RDS(ON)=30mΩ (typ.) @ VGS=4.5V

RDS(ON)=40mΩ (typ.) @ VGS=2.5V

RDS(ON)=67mΩ (typ.) @ VGS=1.8V

• P-Channel

-20V/-3A,

RDS(ON)=56mΩ (typ.) @ VGS=-4.5V

RDS(ON)=85mΩ (typ.) @ VGS=-2.5V

RDS(ON)=135mΩ (typ.) @ VGS=-1.8V

• Super High Dense Cell Design

• Reliable and Rugged

• Lead Free and Green Devices Available

(RoHS Compliant)

Applications

•Power Management in Notebook Computer,

Portable Equipment and Battery Powered

Systems

Top View of JSOT-6

N-Channel MOSFETP-Channel MOSFET

123

4

5

6

Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termina-

tion finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements

of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to

mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous

material and total of Br and Cl does not exceed 1500ppm by weight).

APM2704

Handling Code

Temperature Range

Package Code

CG : JSOT-6

Operating Junction Temperature Range

C : -55 to 150 oC

Handling Code

TR : Tape & Reel

Assembly Material

G : Halogen and Lead Free Device

APM2704 CG : M2704

XXXXX XXXXX - Date Code

Assembly Material

(1)G1

(5)S1

(6)D1

(3)G2

(2)S2

(4)D2

Copyright  ANPEC Electronics Corp.

Rev. A.4 - Dec., 2008 www.anpec.com.tw2

APM2704CG

Absolute Maximum Ratings (TA = 25°C unless otherwise noted)

Electrical Characteristics (TA = 25°C unless otherwise noted)

Rating

Symbol

Parameter N Channel

P Channel

Unit

VDSS Drain-Source Voltage 20 -20

VGSS Gate-Source Voltage ±10 ±10 V

ID* Continuous Drain Current 4 -3

IDM* Pulsed Drain Current VGS=4.5V (N)

VGS=-4.5V (P) 15 -10 A

IS* Diode Continuous Forward Current 1 -0.6 A

TJ Maximum Junction Temperature 150

TSTG Storage Temperature Range -55 to 150 °C

TA=25°C 1

PD* Power Dissipation TA=100°C 0.4 W

RθJA* Thermal Resistance-Junction to Ambient 125 °C/W

Note : *Surface Mounted on 1in2 pad area, t ≤ 10sec.

APM2704CG

Symbol

Parameter Test Conditions Min.

Typ.

Max.

Unit

Static Characteristics

VGS=0V, IDS=250µA N-Ch 20 - -

BVDSS Drain-Source Breakdown

Voltage VGS=0V, IDS=-250µA P-Ch -20 - - V

VDS=16V, VGS=0V - - 1

TJ=85°C

N-Ch - - 30

VDS=-16V, VGS=0V - - -1

IDSS Zero Gate Voltage Drain

Current

TJ=85°C

P-Ch - - -30

µA

VDS=VGS, IDS=250µA N-Ch 0.5 0.75

1

VGS(th) Gate Threshold Voltage VDS=VGS, IDS=-250µA P-Ch -0.5

-0.75

-1 V

VGS=±10V, VDS=0V N-Ch - - ±10

IGSS Gate Leakage Current VGS=±10V, VDS=0V P-Ch - - ±10 µA

ISD=1A, VGS=0V N-Ch

- 0.6 1.3

VSDa Diode Forward Voltage ISD=-0.6A, VGS=0V P-Ch - -0.6

-1.3

V

Copyright  ANPEC Electronics Corp.

Rev. A.4 - Dec., 2008 www.anpec.com.tw3

APM2704CG

Symbol

Parameter Test Conditions Min.

Typ.

Max.

Unit

Static Characteristics (Cont.)

VGS=4.5V, IDS=4A N-Ch

- 30 38

VGS=-4.5V, IDS=-3A P-Ch

- 56 70

VGS=2.5V, IDS=2.5A N-Ch

- 40 55

VGS=-2.5V, IDS=-1.5A P-Ch

- 85 115

VGS=1.8V, IDS=1.5A N-Ch

- 67 105

RDS(ON) a

Drain-Source On-State

Resistance

VGS=-1.8V, IDS=-1A P-Ch

- 135 200

mΩ

Dynamic Characteristics b

N-Ch

- 5 -

RG Gate Resistance VGS=0V,VDS=0V,F=1MHz

P-Ch

- 10 - Ω

N-Ch

- 600 -

Ciss Input Capacitance P-Ch

- 790 -

N-Ch

- 110 -

Coss Output Capacitance P-Ch

- 110 -

N-Ch

- 80 -

Crss Reverse Transfer

Capacitance

N-Channel

VGS=0V,

VDS=10V,

Frequency=1.0MHz

P-Channel

VGS=0V,

VDS=-10V,

Frequency=1.0MHz P-Ch

- 80 -

pF

N-Ch

- 12 23

td(ON) Turn-on Delay Time P-Ch

- 10 19

N-Ch

- 30 55

tr Turn-on Rise Time P-Ch

- 26 48

N-Ch

- 38 69

td(OFF) Turn-off Delay Time P-Ch

- 50 91

N-Ch

- 6 12

tf Turn-off Fall Time

N-Channel

VDD=10V, RL=10Ω,

IDS=1A, VGEN=4.5V,

RG=6Ω

P-Channel

VDD=-10V, RL=10Ω,

IDS=-1A, VGEN=-4.5V,

RG=6Ω P-Ch

- 45 82

ns

N-Ch

- 21 -

trr Reverse Recovery Time P-Ch

- 25 - ns

N-Ch

- 10 -

Qrr Reverse Recovery Charge

N-Channel

IDS=4A,dlSD/dt =100A/µs

P-Channel

IDS=-3A,dlSD/dt =100A/µs P-Ch

- 7 - nc

Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)

Copyright  ANPEC Electronics Corp.

Rev. A.4 - Dec., 2008 www.anpec.com.tw4

APM2704CG

Symbol

Parameter Test Conditions Min.

Typ.

Max.

Unit

Gate Charge Characteristics b

N-Ch

- 10 14

Qg Total Gate Charge P-Ch

- 8 11

N-Ch

- 1.2 -

Qgs Gate-Source Charge P-Ch

- 1.3 -

N-Ch

- 3 -

Qgd Gate-Drain Charge

N-Channel

VDS=10V, VGS=4.5V,

IDS=4A

P-Channel

VDS=-10V, VGS=-4.5V,

IDS=-3A

P-Ch

- 2.7 -

nC

Note a : Pulse test ; pulse width≤300µs, duty cycle≤2%.

Note b : Guaranteed by design, not subject to production testing.

Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)

Copyright  ANPEC Electronics Corp.

Rev. A.4 - Dec., 2008 www.anpec.com.tw5

APM2704CG

Typical Operating Characteristics

ID - Drain Current (A)

Drain Current

Tj - Junction Temperature (°C)

Safe Operation Area

VDS - Drain - Source Voltage (V)

Thermal Transient Impedance

Square Wave Pulse Duration (sec)

Power Dissipation

Ptot - Power (W)

Tj - Junction Temperature (°C)

ID - Drain Current (A)

N-Channel

Normalized Transient Thermal Resistance

020 40 60 80 100 120 140 160

0.0

0.2

0.4

0.6

0.8

1.0

1.2

020 40 60 80 100 120 140 160

0

1

2

3

4

5

1E-4 1E-3 0.01 0.1 110 100

1E-3

0.01

0.1

1

2

Mounted on 1in2 pad

RθJA : 125 oC/W

0.01

0.02

0.05

0.1

0.2

Single Pulse

Duty = 0.5

0.01 0.1 110 100

0.02

0.1

1

10

30

Rds(on) Limit

TA=25oC

10ms

300µs

1ms

100ms

DC

Copyright  ANPEC Electronics Corp.

Rev. A.4 - Dec., 2008 www.anpec.com.tw6

APM2704CG

RDS(ON) - On - Resistance (mΩ)

Drain-Source On Resistance

ID - Drain Current (A)

Tj - Junction Temperature (°C)

Gate Threshold Voltage

VDS - Drain - Source Voltage (V)

ID - Drain Current (A)

Output Characteristics

Drain-Source On Resistance

VGS - Gate - Source Voltage (V)

RDS(ON) - On - Resistance (mΩ)

Normalized Threshold Voltage

Typical Operating Characteristics (Cont.)

-50 -25 025 50 75 100 125 150

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6 IDS=250µA

0.0 0.5 1.0 1.5 2.0 2.5 3.0

0

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

2V

1.5V

VGS= 2.5,3,4,5,6,7,8,9,10 V

036912 15

10

20

30

40

50

60

70

80

90

100

110

120

VGS=1.8V

VGS=2.5V

VGS=4.5V

012345678910

10

20

30

40

50

60

70

80

IDS=4A

N-Channel

Copyright  ANPEC Electronics Corp.

Rev. A.4 - Dec., 2008 www.anpec.com.tw7

APM2704CG

VDS - Drain - Source Voltage (V)

Drain-Source On Resistance

Normalized On Resistance

Tj - Junction Temperature (°C)

C - Capacitance (pF)

VSD - Source - Drain Voltage (V)

Source-Drain Diode Forward

IS - Source Current (A)

Capacitance Gate Charge

QG - Gate Charge (nC)

VGS - Gate - source Voltage (V)

Typical Operating Characteristics (Cont.)

-50 -25 025 50 75 100 125 150

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

RON@Tj=25oC: 30mΩ

VGS = 4.5V

IDS = 4A

0.00.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

0.1

1

10

Tj=150oC

Tj=25oC

04812 16 20

0

100

200

300

400

500

600

700

800

900

1000 Frequency=1MHz

Crss Coss

Ciss

04812 16 20

0

1

2

3

4

5

6

7

8

9

10 VDS=10V

IDS =4A

N-Channel

Copyright  ANPEC Electronics Corp.

Rev. A.4 - Dec., 2008 www.anpec.com.tw8

APM2704CG

-ID - Drain Current (A)

Drain Current

Tj - Junction Temperature (°C)

Safe Operation Area

-VDS - Drain - Source Voltage (V)

Thermal Transient Impedance

Square Wave Pulse Duration (sec)

Power Dissipation

Ptot - Power (W)

Tj - Junction Temperature (°C)

-ID - Drain Current (A)

P-Channel

Normalized Transient Thermal Resistance

020 40 60 80 100 120 140 160

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0 20 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

1E-4 1E-3 0.01 0.1 110 100

1E-3

0.01

0.1

1

2

Mounted on 1in2 pad

RθJA : 125 oC/W

0.01

0.02

0.05

0.1

0.2

Single Pulse

Duty = 0.5

0.01 0.1 110 100

0.01

0.1

1

10

30

Rds(on) Limit

TA=25oC

10ms

300µs

1ms

100ms

DC

Typical Operating Characteristics (Cont.)

Copyright  ANPEC Electronics Corp.

Rev. A.4 - Dec., 2008 www.anpec.com.tw9

APM2704CG

RDS(ON) - On - Resistance (mΩ)

Drain-Source On Resistance

-ID - Drain Current (A)

Tj - Junction Temperature (°C)

Gate Threshold Voltage

-VDS - Drain - Source Voltage (V)

-ID - Drain Current (A)

Output Characteristics

Drain-Source On Resistance

-VGS - Gate - Source Voltage (V)

RDS(ON) - On - Resistance (mΩ)

Normalized Threshold Voltage

Typical Operating Characteristics (Cont.)

-50 -25 0 25 50 75 100 125 150

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6 IDS=-250µA

0.0 0.5 1.0 1.5 2.0 2.5 3.0

0

1

2

3

4

5

6

7

8

9

10

-2V

-1.5V

VGS=-2.5,-3,-4,-5,-6,-7,-8-, -10V

0 2 4 6 8 10

0

20

40

60

80

100

120

140

160

180

200

VGS= -1.8V

VGS= -2.5V

VGS= -4.5V

012345678910

20

40

60

80

100

120

140

IDS=-3A

P-Channel

Copyright  ANPEC Electronics Corp.

Rev. A.4 - Dec., 2008 www.anpec.com.tw10

APM2704CG

-VDS - Drain - Source Voltage (V)

Drain-Source On Resistance

Normalized On Resistance

Tj - Junction Temperature (°C)

C - Capacitance (nC)

-VSD - Source - Drain Voltage (V)

Source-Drain Diode Forward

-IS - Source Current (A)

Capacitance Gate Charge

QG - Gate Charge (nC)

-VGS - Gate - source Voltage (V)

Typical Operating Characteristics (Cont.)

-50 -25 025 50 75 100 125 150

0.4

0.6

0.8

1.0

1.2

1.4

1.6

RON@Tj=25oC: 56mΩ

VGS = -4.5V

IDS = -3A

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

0.1

1

10

Tj=150oC

Tj=25oC

0 4 8 12 16 20

0

100

200

300

400

500

600

700

800

900

1000

1100 Frequency=1MHz

Crss Coss

Ciss

0 2 4 6 8 10 12 14 16

0

1

2

3

4

5

6

7

8

9

10 VDS= -10V

IDS= -3A

P-Channel

Copyright  ANPEC Electronics Corp.

Rev. A.4 - Dec., 2008 www.anpec.com.tw11

APM2704CG

Package Information

JSOT-6

c

E

L

Θ

S

Y

M

B

O

LMIN. MAX.

1.10

0.01

0.25 0.40

0.10 0.20

2.95 3.10

2.50 3.00

2.30

0.30 0.60

A

A1

b

c

D

E

E1

E2

e

L

MILLIMETERS

A2 0.92 1.00

0.95 BSC

JSOT-6

2.65 3.05

MIN. MAX.

INCHES

0.043

0.000

0.037 BSC

0.036 0.039

0.010 0.016

0.004 0.008

0.116 0.122

0.098 0.118

0.091

0.104 0.120

0.012 0.024

0.93 0.037

0.10 0.004

2.50 0.098

00

°

8

°

0

°

8

°

D

E1

E2

e

b

A2

A

A1

Note : 1. Follow GEM 2928 6J.

2. Dimension D, D1, and E1 do not include mold flash or

protrusions. Mold flash or protrusions shall not exceed

10 mil.

Copyright  ANPEC Electronics Corp.

Rev. A.4 - Dec., 2008 www.anpec.com.tw12

APM2704CG

Carrier Tape & Reel Dimensions

A

E1

A

B

W

F

T

P0

OD0

BA0

P2

K0

B0

SECTION B-B

SECTION A-A

OD1

P1

H

T1

A

d

Application

A H T1 C d D W E1 F

178.0±2.00

50 MIN.

8.4+2.00

-0.00

13.0+0.50

-0.20

1.5 MIN.

20.2 MIN.

8.0±0.30

1.75±0.10

3.5±0.05

P0 P1 P2 D0 D1 T A0 B0 K0

JSOT-6

4.0±0.10

2.0±0.05

1.5+0.10

-0.00

1.0 MIN.

0.6+0.00

-0.40 3.20±0.20

3.10±0.20

1.50±0.20

(mm)

Devices Per Unit

Package Type Unit Quantity

JSOT-6 Tape & Reel 3000

Copyright  ANPEC Electronics Corp.

Rev. A.4 - Dec., 2008 www.anpec.com.tw13

APM2704CG

Taping Direction Information

JSOT-6

Reflow Condition (IR/Convection or VPR Reflow)

t 25 C to Peak

tp

Ramp-up

tL

Ramp-down

ts

Preheat

Tsmax

Tsmin

TL

TP

25

Temperature

Time

Critical Zone

TL to TP

°

Reliability Test Program

Test item Method Description

SOLDERABILITY MIL-STD-883D-2003 245°C, 5 sec

HOLT MIL-STD-883D-1005.7 1000 Hrs Bias @125°C

PCT JESD-22-B, A102 168 Hrs, 100%RH, 121°C

TST MIL-STD-883D-1011.9 -65°C~150°C, 200 Cycles

USER DIRECTION OF FEED

XXXXX XXXXX

MAAAA XXXXX

MAAAAMAAAA

Copyright  ANPEC Electronics Corp.

Rev. A.4 - Dec., 2008 www.anpec.com.tw14

APM2704CG

Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly

Average ramp-up rate

(TL to TP) 3°C/second max. 3°C/second max.

Preheat

- Temperature Min (Tsmin)

- Temperature Max (Tsmax)

- Time (min to max) (ts)

100°C

150°C

60-120 seconds

150°C

200°C

60-180 seconds

Time maintained above:

- Temperature (TL)

- Time (tL) 183°C

60-150 seconds 217°C

60-150 seconds

Peak/Classification Temperature (Tp)

See table 1 See table 2

Time within 5°C of actual

Peak Temperature (tp) 10-30 seconds 20-40 seconds

Ramp-down Rate 6°C/second max. 6°C/second max.

Time 25°C to Peak Temperature 6 minutes max. 8 minutes max.

Note: All temperatures refer to topside of the package. Measured on the body surface.

Classification Reflow Profiles

Table 2. Pb-free Process – Package Classification Reflow Temperatures

Package Thickness Volume mm3

<350 Volume mm3

350-2000 Volume mm3

>2000

<1.6 mm 260 +0°C* 260 +0°C* 260 +0°C*

1.6 mm – 2.5 mm 260 +0°C* 250 +0°C* 245 +0°C*

≥2.5 mm 250 +0°C* 245 +0°C* 245 +0°C*

*Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated

classification temperature (this means Peak reflow temperature +0°C. For example 260°C+0°C) at the rated MSL

level.

Table 1. SnPb Eutectic Process – Package Peak Reflow Temperatures

Package Thickness Volume mm3

<350 Volume mm3

≥350

<2.5 mm 240 +0/-5°C 225 +0/-5°C

≥2.5 mm 225 +0/-5°C 225 +0/-5°C

Customer Service

Anpec Electronics Corp.

Head Office :

No.6, Dusing 1st Road, SBIP,

Hsin-Chu, Taiwan, R.O.C.

Tel : 886-3-5642000

Fax : 886-3-5642050

Taipei Branch :

2F, No. 11, Lane 218, Sec 2 Jhongsing Rd.,

Sindain City, Taipei County 23146, Taiwan

Tel : 886-2-2910-3838

Fax : 886-2-2917-3838