VEMD2003X01, VEMD2023X01
www.vishay.com Vishay Semiconductors
Rev. 1.0, 04-Apr-13 1Document Number: 84147
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Silicon PIN Photodiode
DESCRIPTION
VEMD2003X01 and VEMD2023X01 are high speed and high
sensitive PIN photodiodes in a miniature surface mount
package (SMD) with dome lens and daylight blocking filter.
Filter is matched with IR emitters operating at wavelength of
830 nm to 950 nm. The photo sensitive area of the chip is
0.23 mm2.
FEATURES
Package type: surface mount
Package form: GW, RGW
Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.55
AEC-Q101 qualified
High radiant sensitivity
Daylight blocking filter matched with 830 nm
to 950 nm IR emitters
Fast response times
Angle of half sensitivity: = ± 35°
Package matched with IR emitter series
VSMB2943X01
Floor life: 4 weeks, MSL 2a, acc. J-STD-020
Lead (Pb)-free reflow soldering
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
High speed photo detector
Infrared remote control
Infrared data transmission
Photo interrupters
IR touch panels
Note
Test conditions see table “Basic Characteristics”
Note
MOQ: minimum order quantity
VEMD2003X01 VEMD2023X01
PRODUCT SUMMARY
COMPONENT Ira (μA) (deg) 0.5 (nm)
VEMD2003X01 10 ± 35 750 to 1050
VEMD2023X01 10 ± 35 750 to 1050
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VEMD2003X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Reverse gullwing
VEMD2023X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Gullwing
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR60 V
Power dissipation Tamb 25 °C PV215 mW
Junction temperature Tj100 °C
Operating temperature range Tamb - 40 to + 100 °C
Storage temperature range Tstg - 40 to + 100 °C
Soldering temperature Acc. reflow solder profile fig. 7 Tsd 260 °C
Thermal resistance junction/ambient Acc. J-STD-051 RthJA 250 K/W
VEMD2003X01, VEMD2023X01
www.vishay.com Vishay Semiconductors
Rev. 1.0, 04-Apr-13 2Document Number: 84147
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Fig. 3 - Reverse Light Current vs. Irradiance
Fig. 4 - Diode Capacitance vs. Reverse Voltage
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 50 mA VF1V
Breakdown voltage IR = 100 μA, E = 0 V(BR) 32 V
Reverse dark current VR = 10 V, E = 0 Iro 110nA
Diode capacitance VR = 0 V, f = 1 MHz, E = 0 CD4pF
VR = 5 V, f = 1 MHz, E = 0 CD1.3 pF
Open circuit voltage Ee = 1 mW/cm2, = 950 nm Vo350 mV
Temperature coefficient of VoEe = 1 mW/cm2, = 950 nm TKVo - 2.6 mV/K
Short circuit current Ee = 1 mW/cm2, = 950 nm Ik10 μA
Temperature coefficient of IkEe = 1 mW/cm2, = 950 nm TKIk 0.1 %/K
Reverse light current Ee = 1 mW/cm2, = 950 nm, VR = 5 V Ira 71014μA
Angle of half sensitivity ± 35 deg
Wavelength of peak sensitivity p940 nm
Range of spectral bandwidth 0.5 750 to 1050 nm
Rise time VR = 10 V, RL = 1 k, = 820 nm tr100 ns
Fall time VR = 10 V, RL = 1 k, = 820 nm tf100 ns
20
1
10
100
1000
Iro - Reverse Dark Current (nA)
Tamb - Ambient Temperature (°C)
94 8427
VR = 10 V
100
806040
0.6
0.8
1.0
1.2
1.4
I
ra, rel
- Relative Reverse Light Current
T
amb
- Ambient Temperature (°C)
94 8416
VR = 5 V
λ = 950 nm
010080
60
4020
0.1
1
10
100
0.01
Ira - Reverse Light Current (µA)
Ee - Irradiance (mW/cm2)
VR = 5 V
10
1
0.1
0
2
4
6
8
0.1
C
D
- Diode Capacitance (pF)
VR- Reverse Voltage (V)
94 8430
E = 0
f = 1 MHz
100
10
1
VEMD2003X01, VEMD2023X01
www.vishay.com Vishay Semiconductors
Rev. 1.0, 04-Apr-13 3Document Number: 84147
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Relative Spectral Sensitivity vs. Wavelength Fig. 6 - Relative Radiant Intensity vs. Angular Displacement
REFLOW SOLDER PROFILE
Fig. 7 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020D
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
FLOOR LIFE
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 4 weeks
Conditions: Tamb < 30 °C, RH < 60 %
Moisture sensitivity level 2a, acc. to J-STD-020.
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
0
0.2
0.4
0.6
0.8
1.0
1.2
600 700 800 900 1000 1100
21554 λ - Wavelength (nm)
S (λ)
rel
- Relative Spectral Sensitivity
0.4 0.2 00.6
0.9
0.8
0° 30°10° 20°
40°
50°
60°
70°
80°
0.7
1.0
Srel - Relative Radiant Sensitivity
ϕ - Angular Displacement
0
50
100
150
200
250
300
0 50 100 150 200 250 300
Time (s)
Temperature (°C)
240 °C 245 °C
max. 260 °C
max. 120 s max. 100 s
217 °C
max. 30 s
max. ramp up 3 °C/s max. ramp down 6 °C/s
19841
255 °C
VEMD2003X01, VEMD2023X01
www.vishay.com Vishay Semiconductors
Rev. 1.0, 04-Apr-13 4Document Number: 84147
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters: VEMD2003
VEMD2003X01, VEMD2023X01
www.vishay.com Vishay Semiconductors
Rev. 1.0, 04-Apr-13 5Document Number: 84147
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters: VEMD2023
VEMD2003X01, VEMD2023X01
www.vishay.com Vishay Semiconductors
Rev. 1.0, 04-Apr-13 6Document Number: 84147
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TAPING AND REEL DIMENSIONS in millimeters: VEMD2003
VEMD2003X01, VEMD2023X01
www.vishay.com Vishay Semiconductors
Rev. 1.0, 04-Apr-13 7Document Number: 84147
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TAPING AND REEL DIMENSIONS in millimeters: VEMD2023
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
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